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Aircraft lightning strikes were investigated in regard to their effects on voltages and currents in aircraft wiring. An electrical conductor's response to magnetic fields and electric fields was examined as part of the voltage and current calculations. The wiring system of the space shuttle was briefly considered as an example.
The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.
A power conditioner was developed which used a capacitor diode voltage multiplier to provide a high voltage without the use of a step-up transformer. The power conditioner delivered 1200 Vdc at 100 watts and was operated from a 120 Vdc line. The efficiency was in excess of 90 percent. The component weight was 197 grams. A modified boost-add circuit was used for the regulation. A short circuit protection circuit was used which turns off the drive circuit upon a fault condition, and recovers within 5 ms after removal of the short. High energy density polysulfone capacitors and high speed diodes were used in the multiplier circuit.
A 1-kW capacitor-diode voltage multiplier (CDVM) was designed, fabricated and tested to demonstrate the power of feasibility of high power CDVM's and to verify the analytical techniques that had been used to predict the performance characteristics of a 6-kw CDVM. High efficiency (96.2%), a low ratio of component weight to power (0.55 kg/kW), and low output ripple voltage (less than 1%, peak to peak) were obtained during the operation of a 1-kW CDVM various input line, load current, and load fault conditions.
Voltage multiplier techniques are extended at medium power levels to larger multiplication ratios. A series of dc-dc converters were built, with from 20 to 45 stages and with power levels up to 100 watts. Maximum output voltages were about 10,000 volts.
Voltage multiplier techniques were extended at medium power levels to larger multiplication ratios. A series of DC-DC converters were built, with from 20 to 45 stages and with power levels up to 100 watts. Maximum output voltages were about 10,000 volts.
Circuit determines whether voltage is within preselected range of voltage levels.Device requires fewer components than previous window comparators and is less susceptible to errors from reference drift. Comparator is useful in process-control circuitry, measuring instruments, and checkout equipment.
Various government agencies have put forth effort to enable the prediction of what lightning current will do to aircraft avionic systems. Ongoing and future efforts of predicting avionic voltages and currents caused by electromagnetic fields external to the aircraft are illustrated. The Intrasystem Analysis Program (IAP) was put to use to predict lightning-induced voltages on avionic systems. Presently funded programs are investigating the modification nonmetallic composite materials will cause to the metallic IAP program predictions. The various factors involved in designing prediction techniques are discussed.
The power processor operates in several modes, delivering up to 100 amperes of regulated electrical power, operating at input voltages to 375 volts with outputs controlled by an integral microprocessor. Several alternative packaging concepts are discussed and evaluated. High-voltage design applications, power stage interconnection and EMI considerations are also discussed. Preliminary thermal analyses were performed and the results presented for each conceptual approach with parametric study results given for the selected concept.
Knowledge of the floating voltage configuration of a large array in orbit is needed in order to estimate various plasma-interaction effects. The equilibrium configuration of array voltages relative to space depends on the sheath structure. The latter dependence for an exposed array is examined in the light of two finite-sheath effects. One effect is that electron currents may be seriously underestimated. The other is that a potential barrier for electrons can occur, restricting electron currents. A conducting surface is assumed on the basis of a conductivity argument. Finite-sheath effects are investigated. The results of assuming thin-sheath and thick-sheath limits on the floating configuration of a linearly connected array are studied. Sheath thickness and parasitic power leakage are estimated. Numerically computed fields using a 3-D code are displayed in the thick-sheath limit.
Ceramic capacitors failed insulation resistance testing at less than one-tenth their rated voltage. Many failures recovered as the voltage was increased. Comprehensive failure analysis techniques, some of which are unprecedented, were used to examine these failures. It was determined that there was more than one failure mechanism, and the results indicate a need for special additional screening.
The basic methods of differential heterodyne spectroscopy with Josephson junctions are described. A technique is outlined for bridging the gap between a local oscillator frequency and a signal frequency through the use of a voltage-tunable internal oscillation frequency in a Josephson junction structure. It is shown that an intermediate frequency can be converted to a conveniently low frequency by double frequency conversion carried out directly in a Josephson junction. The expected conversion efficiency is estimated qualitatively. Experiments are discussed in which the differential heterodyne frequency-conversion technique was demonstrated at a wavelength of 0.4 mm and a voltage-tunable oscillation in a double Josephson junction structure was observed, with oscillation line widths as narrow as 0.5 Hz, for a resistance of 3.3 nanohms and an estimated inductance of the order of 1 nH.
Improvements in the open circuit voltage of 0.1 ohm-cm silicon solar cells were achieved using a multistep diffusion technique. Experimental details are given along with the results of an analysis that indicate that anomalous behavior of the electron mobility in the cell base limits attainment of higher voltages.
Multikilowatt power levels for future payloads can be more efficiently generated using solar arrays operating in the kilovolt range. This implies that large areas of the array at high operating voltages will be exposed to the space plasma environment. The resulting interactions of these high voltage surfaces with space plasma environments can seriously impact the performance of the satellite system. The plasma-surface interaction phenomena were studied in tests performed in two separate vacuum chambers, a 4.6 m diameter by 19.2 long chamber and a 20 m diameter by 27.4 m long chamber. The generated plasma density was approximately 1x10 to the 4th power/cu cm. Ten solar array panels, each with areas of 1400 sq cm were used in the tests. Nine of the solar panels were tested as a composite unit in the form of a 3x3 solar panel matrix. The results from all the tests confirmed small sample tests results: insulators were found to enhance the plasma coupling current for high positive bias and arcing was found to occur at high negative bias.
The contamination mechanics and resulting failure modes of high voltage electrical insulation due to carbon/graphite fibers were examined. The high voltage insulation vulnerability to carbon/graphite fiber induced failure was evaluated using a contamination system which consisted of a fiber chopper, dispersal chamber, a contamination chamber, and air ducts and suction blower. Tests were conducted to evaluate the effects of fiber length, weathering, and wetness on the insulator's resistance to carbon/graphite fibers. The ability of nuclear, fossil, and hydro power generating stations to maintain normal power generation when the surrounding environment is contaminated by an accidental carbon fiber release was investigated. The vulnerability assessment included only the power plant generating equipment and its associated controls, instrumentation, and auxiliary and support systems.
The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.
Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.