Float zone space processing rationale
The role of float zone silicon in integrated circuits is surveyed. The problem of oxygen thermal donors and their inhomogeneous distribution is predicted to be a critical issue.
Jastrzebski, L.↗
SEARCH · Engineering Papers
Results for “silicon processing”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Corrosion of Silicon-Based Ceramics in Combustion Environments
The processes of passive oxidation, deposit-induced corrosion, active oxidation, scale/substance interactions, and scale volatility are presently studied in the case of high-purity SiC and Si3N4 in pure oxygen, giving attention to such secondary elements in the ceramics as water and CO2 oxidants, combustion environment impurities, and thermal cycling. Deposit-induced corrosion is discussed for the cases of NaSO4 as well as vanadate and oxide-slag deposits; issues associated with the active-to-passive oxidation transition are noted.
Jacobson, Nathan S.↗
Development of a polysilicon process based on chemical vapor deposition, phase 1
The development of a dichlorosilane-based reductive chemical vapor deposition process for the production of polycrystalline silicon is discussed. Experimental data indicate that the ease of ignition and explosion severity of dichlorosilane (DCS)/air mixtures is substantially attenuated if the DCS is diluted with hydrogen. Redesign of the process development unit to accommodate safety related information is described. Several different sources of trichlorosilane were used to generate a mixture of redistributed chlorosilanes via Dowex ion exchange resin. The unseparated mixtures were then fed to an experimental reactor in which silicon was deposited and the deposited silicon analyzed for electrically active impurities. At least one trichlorosilane source provided material of requisite purity. Silicon grown in the experimental reactor was converted to single crystal material and solar cells fabricated and tested.
Mccormick, J.↗
Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation
Not Available
Zhang, Yanwen↗
Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane
Metal filament plays a key role in the technique of catalytic chemical vapor deposition (Cat-CVD) as it serves as a catalyst in dissociating the source gas to form reactive species. These reactive species initiate the gas-phase reaction chemistry and final thin film and nanostructure formation. At the same time, they also react with the metal itself, leading to the formation of metal alloys and other deposits. The deposits on the tungsten filaments when exposed to 1,1-dimethylsilacyclobutane (DMSCB), a single-source precursor for silicon carbide thin films, in the process of Cat-CVD were studied in this work. It has been demonstrated that a rich variety of deposits, including tungsten carbides (W{sub 2}C and WC), tungsten silicide (W{sub 5}Si{sub 3}), silicon carbide, amorphous carbon, and graphite, form on the W filament surfaces. The structural and morphological changes in the tungsten filaments depend strongly on the DMSCB pressure and filament temperature. At 1000 and 2000 °C, the formation of WC and W{sub 2}C dominates. In addition, a thin amorphous carbon layer has been found at 1500 °C with the 0.12 and 0.24 Torr of DMSCB and a lower temperature of 1200 °C with the 0.48 Torr of DMSCB. An increase in the DMSCB sample pressure gives rise to higher Si and C contents. As a result, the formation of SiC and W{sub 5}Si{sub 3} has been observed with the two high-pressure DMSCB samples (i.e., 0.24 and 0.48 Torr). The rich decomposition chemistry of DMSCB on the W surfaces is responsible for the extensive changes in the structure of the W filament, providing support for the close relationship between the gas-phase decomposition chemistry and the nature of alloy formation on the metal surface. The understanding of the structural changes obtained from this work will help guide the development of efficient methods to solve the filament aging problem in Cat-CVD and also to achieve a controllable deposition process.
36 MATERIALS SCIENCE↗
New outlook on control of crystalline and chemical perfection during growth of silicon
Significant progress has been made in our understanding of the Czochralski crystal growth process with the realization that the incorporation of oxygen into silicon is directly related to the internal gettering capability of wafers during device fabrication. It was also recognized that the electronic properties exhibited by silicon during various stages of device fabrication were significantly affected by the thermal history of the silicon during the post-growth cool-down period. Turbulent melt convection, induced by unavoidable destabilizing thermal gradients, was found to interfere with homogeneous dopant (and oxygen) incorporation and to influence markedly the dynamics of nonequilibrium point defects in the solidified silicon matrix during the cool-down period. In view of the unavoidability of destabilizing thermal gradients in conventional crystal growth configurations, melt stabilization through the application of magnetic fields is generally considered a viable approach. Control of heat input to the melt through heat pipe systems, as used during growth of germanium, cannot be applied to industrial growth of silicon. Recent studies have shown that heat exchange systems located coaxially about a growing crystal can be used to stabilize and control not only heat transfer in the grown crystal, but also in the melt adjacent to the solidification interface.
Witt, A. F.↗
Electricity from sunlight
The paper discusses a number of new unconventional processes proposed for the low-cost production of silicon for solar cells. Consideration is given to: (1) the Battelle process (Zn/SiCl4), (2) the Battelle process (SiI4), (3) the Silane process, (4) the Motorola process (SiF4/SiF2), (5) the Westinghouse process (Na/SiCl4), (6) the Dow Corning process (C/SiO2), (7) the AeroChem process (SiCl4/H atom), and the Stanford process (Na/SiF4). Preliminary results indicate that the conventional process and the SiI4 processes cannot meet the project goal of $10/kg by 1986. Preliminary cost evaluation results for the Zn/SiCl4 process are favorable.
Yaws, C. L.↗
Alignment and Bonding of Silicon Mirrors for High-Resolution X-Ray Optics
How to align and bond sub-arc second silicon mirrors? (1) Description of the alignment and bonding process. (2) Technical challenges and advances in aligning and bonding precise silicon mirrors. (a) Precise mirror placement (b) Measurement of focusing (c) Method of spacer adjustment (d) Bonding distortion and displacement (e) Co-alignment and bonding of subsequent mirrors.
Chan, Kai-Wing↗
Development of a Thick-film Silicon Ribbon Growth Technique for Application to Large-area Solar Cells and Arrays
A new technique is described for growth of large-area silicon ribbons. This technique is an edge-defined, film-fed growth process by which single crystals can be grown having a shape controlled by the outside dimensions of a shaping die, growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The material from which the die is fabricated is very critical to the process. The die must be wet by the silicon, but adverse impurities must not be introduced into the silicon, and the die must not become degraded by the molten silicon. A breakthrough in die fabrication that has allowed the growth of silicon ribbons having dimensions of 1 cm by 30 cm with a thickness of 0.7 mm is described. The implications of this significant advancement with respect to development of photovoltaic solar arrays for wide-scale terrestrial solar-to-electric energy conversion systems are discussed.
Berman, P. A.↗
Affordable Fiber-Reinforced Ceramic Composites Win 1995 R and D 100 Award
Affordable fiber-reinforced ceramic matrix composites (AFReCC) with high strength and toughness, good thermal conductivity, thermal shock resistance, and oxidation resistance are needed for high-temperature structural applications. AFReCC materials will have various applications in advanced high-efficiency and high-performance engines: that is, the High Speed Civil Transport (HSCT), space propulsion components, and land-based systems. For example, silicon-carbide-fiber-reinforced silicon carbide matrix composites show promise for meeting the criteria of high strength, thermal conductivity, and toughness required for the HSCT combustor liner. AFReCC received R&D Magazine's prestigious R&D 100 Award in 1995. The fabrication process for these composites has three steps. In the first step, fiber preforms are made and chemical vapor infiltration is used to apply the desired interface coating on the fibers. This step also rigidizes the preform. The second step consists of resin infiltration, which after pyrolysis, yields an interconnected network of porous carbon as the matrix. In the final step of the process, the carbon-containing preform is infiltrated with molten silicon or silicon alloys in a furnace. This converts the carbon to silicon carbide leaving as little as 5 percent residual free silicon or refractory disilicide phase. This process is suitable for any type of small-diameter fiber (e.g., carbon, alumina, or silicon carbide) woven into a two- or three-dimensional architecture. This processing approach leads to dense composites where matrix microstructure and composition can be tailored for optimum properties. It has much lower processing cost (less than 50 percent) in comparison to other approaches to fabricating silicon-carbide-based composites. The photograph shows the various AFReCC components. Thermomechanical and thermochemical characterization of these composites under the hostile environments that will be encountered in engine applications is underway.
Source record↗
Fabrication of nanostructured silicon surface using selective chemical etching
A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10{sup –12} M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the p-type silicon is two times greater than the formation rate in the n-type silicon.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Ultrasonic Measurement Of Silicon-Growth Interface
Position of interface between silicon melt and growing ribbon of silicon measured with aid of reflected ultrasound, according to proposal. Reflections reveal characteristics of ribbon and melt. Ultrasound pulses travel through rods to silicon ribbon growing by dendritic-web process. Rods return reflections of pulses to sonic transducers. Isolate transducers thermally, but not acoustically, from hot silicon melt.
Heyser, Richard C.↗
Effect of Barothermal Processing on the Solid-State Formation of the Structure and Properties of 16 at % Si–Al Hypereutectic Alloy
We describe barothermal processing (hot isostatic pressing) of a 16 at % Si–Al binary alloy for 3 h at a temperature of 560°C and pressure of 100 MPa for 3 h, in combination with measurements of heat effects during cooling. The results demonstrate that this processing leads to the fragmentation of the silicon structural constituent and ensures a high degree of homogenization of the as-prepared alloy. Heat treatment of the 16 at % Si–Al alloy at 560°C and a pressure of 100 MPa leads to a thermodynamically driven enhanced silicon dissolution, up to ~10 at %, in the aluminum matrix, resulting in the formation of a supersaturated solid solution, which subsequently decomposes during cooling. We analyze the complete porosity elimination process, which makes it possible to obtain a material with 100% relative density. According to differential barothermal analysis, microstructural analysis, and scanning and transmission electron microscopy data, barothermal processing of the 16 at % Si–Al alloy produces a bimodal size distribution of the silicon phase constituent: microparticles 3.6 μm in average size and nanoparticles down to ~1 nm in diameter. The Al matrix has been shown to contain a high density of edge dislocations. Barothermal processing reduces the thermal expansion coefficient and microhardness of the hypereutectic alloy. We conclude that solid-state barothermal processing is an effective tool for completely eliminating microporosity from the 16 at % Si–Al alloy, reaching a high degree of homogenization, and controlling the microstructure of the alloy, in particular by producing high dislocation density in the aluminum matrix.
36 MATERIALS SCIENCE↗
Preparation of Nano-SiO{sub 2}-Coated Graphite Films by a Laser-Assisted Sol–Gel Process
Here, we prepared nano-SiO{sub 2}-coated graphite films using a novel laser-assisted sol–gel method. The SiO{sub 2} sol–gel prepositioned on the graphite substrate was irradiated by the fiber laser at different energy densities. The growth mechanism of the coatings under laser irradiation was studied and the effects of processing parameters on the coating structure were systematically investigated. In addition, the high-temperature oxidation resistance of these samples was examined. Surface morphology and elemental composition were examined using scanning electron microscopy and energy-dispersive spectrometer. Phase constituents and microstructure were identified by x-ray diffraction and transmission electron microscopy. The oxidation resistance was analyzed by thermal gravimetric analysis. The results found that laser irradiation significantly modifies the sol–gel-deposited nano-SiO{sub 2} layer. A uniform and compact nano-SiO{sub 2} coating was obtained when irradiated by laser energy density of 14.4 kJ/cm{sup 2}. Optimum high-temperature oxidation resistance was achieved for the two-layer SiO{sub 2}-coated films.
36 MATERIALS SCIENCE↗
Electro-Optic Modulation Using Metal-Free Perovskites
Electro-optic (EO) modulation is of interest to impart information onto an optical carrier. Inorganic crystals—most notably LiNbO 3 and BaTiO 3 —exhibit EO modulation and good stability, but are difficult to integrate with silicon photonic technology. Solution-processed organic EO materials are readily integrated but suffer from thermal degradation at the temperatures required in operating conditions for accelerated reliability studies. Hybrid organic–inorganic metal halide perovskites have the potential to overcome these limitations; however, these have so far relied on heavy metals such as lead and cadmium. Here, we report linear EO modulation using metal-free perovskites, which maintain the crystalline features of the inorganic EO materials and incorporate the flexible functionality of organic EO chromophores. We find that, by introducing a deficiency of cations, we reduce the symmetry in the perovskite crystal and produce thereby an increased EO response. The best-engineered perovskites reported herein showcase an EO coefficient of 14 pm V –1 at a modulation frequency of 80 kHz, an order of magnitude higher than in the nondefective materials. Furthermore, we observe split peaks in the X-ray diffraction and neutron diffraction patterns of the defective sample, indicating that the crystalline structure has been distorted and the symmetry reduced. Density functional theory (DFT) studies link this decreased symmetry to NH 4 + deficiencies. This demonstration of EO from metal-free perovskites highlights their potential in next-generation optical information transmission.
36 MATERIALS SCIENCE↗
Polystyrene-block-Polydimethylsiloxane as a Potential Silica Substitute for Polysiloxane Reinforcement
We report here on microphase-separated poly(styrene-block-dimethylsiloxane) (PS-b-PDMS) as a reinforcing filler in PDMS thermosets that overcomes the long-standing problem of aging in the processing of silica-reinforced silicone. Surprisingly, PS-b-PDMS reinforced composites display comparable mechanical performance to silica-modified analogs, even though the modulus of PS is much smaller than that of silica and there is no evidence of percolation with respect to the rigid PS domains. We have found that a few unique characteristics contribute to the reinforcing performance of PS-b-PDMS. The strong self-assembly behavior promotes batch-to-batch repeatability by having well-dispersed fillers. The structure and size of the fillers depend on the loading and characteristics of both filler and matrix, along with the shear effect. The reinforcing effect of PS-b-PDMS is mostly brought by the entanglements between the corona layer of the filler and the matrix, rather than the hydrodynamic reinforcement of the PS phase.
36 MATERIALS SCIENCE↗
Characterization of contaminants in the Lyman-alpha forest auto-correlation with DESI
Baryon Acoustic Oscillations can be measured with sub-percent precision above redshift two with the Lyman-α (Lyα) forest auto-correlation and its cross-correlation with quasar positions. This is one of the key goals of the Dark Energy Spectroscopic Instrument (DESI) which started its main survey in May 2021. We present in this paper a study of the contaminants to the Lyα forest which are mainly caused by correlated signals introduced by the spectroscopic data processing pipeline as well as astrophysical contaminants due to foreground absorption in the intergalactic medium. Notably, an excess signal caused by the sky background subtraction noise is present in the Lyα auto-correlation in the first line-of-sight separation bin. We use synthetic data to isolate this contribution, we also characterize the effect of spectro-photometric calibration noise, and propose a simple model to account for both effects in the analysis of the Lyα forest. We then measure the auto-correlation of the quasar flux transmission fraction of low redshift quasars, where there is no Lyα forest absorption but only its contaminants. We demonstrate that we can interpret the data with a two-component model: data processing noise and triply ionized Silicon and Carbon auto-correlations. This result can be used to improve the modeling of the Lyα auto-correlation function measured with DESI.
79 ASTRONOMY AND ASTROPHYSICS↗
Gain characterization of LGAD sensors with beta particles and 28-MeV protons
Low Gain Avalanche Diodes, also known as LGADs, are widely considered for fast-timing applications in high energy physics, nuclear physics, space science, medical imaging, and precision measurements of rare processes. Such devices are silicon-based and feature an intrinsic gain due to a p + -doped layer that allows the production of a controlled avalanche of carriers, with multiplication on the order of 10–100. This technology can provide time resolution on the order of 20–30 ps, and variants of this technology can provide precision tracking too. The characterization of LGAD performance has so far primarily been focused on the interaction of minimum ionizing particles for high energy and nuclear physics applications. This article expands the study of LGAD performance to highly-ionizing particles, such as 28-MeV protons, which are relevant for several future scientific applications, e.g. in biology and medical physics, among others. These studies were performed with a beam of 28-MeV protons from a tandem Van de Graaff accelerator at Brookhaven National Laboratory and beta particles from a ^90Sr source; these were used to characterize the response and the gain of an LGAD as a function of bias voltage and collected charge. Here, the experimental results are also compared to TCAD simulations.
47 OTHER INSTRUMENTATION↗