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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Confinement of an Electron in an Image Potential and an External Electrostatic Field

The quasi-classical approximation is used to determine the positions of the classical turning points upon motion of an electron that is bound by an image field and a constant homogeneous electric field of the same direction. Power expansions of the coordinates of the turning points in a wide range of electron energies and field strengths are obtained. The mechanism of one-dimensional confinement of an electron, which determines a completely discrete spectrum of states, is described. The dependence of the spatial width of the confinement region on the field strength and electron energy is determined. The dependences of the electron energy in different states on the external field strength are calculated numerically. Quasi-classical quantization is performed, and the dependence of the electron energy on the width of the confinement region is determined. The energy interval of a maximum density of electron states is found, which is determined by the dependence of the width of the confinement region on the electric field strength.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tunnelling with wormhole creation

The description of quantum tunnelling in the presence of gravity shows subtleties in some cases. We discuss wormhole production in the context of the spherically symmetric thin-shell approximation. By presenting a fully consistent treatment based on canonical quantization, we solve a controversy present in the literature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Completing Lorentz violating massive gravity at high energies

Theories with massive gravitons are interesting for a variety of physical applications, ranging from cosmological phenomena to holographic modeling of condensed matter systems. To date, they have been formulated as effective field theories with a cutoff proportional to a positive power of the graviton mass m{sub g} and much smaller than that of the massless theory (M{sub P} ≈ 10{sup 19} GeV in the case of general relativity). In this paper, we present an ultraviolet completion for massive gravity valid up to a high energy scale independent of the graviton mass. The construction is based on the existence of a preferred time foliation combined with spontaneous condensation of vector fields. The perturbations of these fields are massive and below their mass, the theory reduces to a model of Lorentz violating massive gravity. The latter theory possesses instantaneous modes whose consistent quantization we discuss in detail. We briefly study some modifications to gravitational phenomenology at low-energies. The homogeneous cosmological solutions are the same as in the standard cosmology. The gravitational potential of point sources agrees with the Newtonian one at distances small with respect to m{sub g}{sup −1}. Interestingly, it becomes repulsive at larger distances.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

Conductance dips and spin precession in a nonuniform waveguide with spin–orbit coupling

An infinite waveguide with a nonuniformity, a segment of finite length with spin–orbit coupling, is considered in the case when the Rashba and Dresselhaus parameters are identical. Analytical expressions have been derived in the single-mode approximation for the conductance of the system for an arbitrary initial spin state. Based on numerical calculations with several size quantization modes, we have detected and described the conductance dips arising when the waves are localized in the nonuniformity due to the formation of an effective potential well in it. We show that allowance for the evanescent modes under carrier spin precession in an effective magnetic field does not lead to a change in the direction of the average spin vector at the output of the system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Analytical study of bound states in graphene nanoribbons and carbon nanotubes: The variable phase method and the relativistic Levinson theorem

The problem of localized states in 1D systems with a relativistic spectrum, namely, graphene stripes and carbon nanotubes, is studied analytically. The bound state as a superposition of two chiral states is completely described by their relative phase, which is the foundation of the variable phase method (VPM) developed herein. Based on our VPM, we formulate and prove the relativistic Levinson theorem. The problem of bound states can be reduced to the analysis of closed trajectories of some vector field. Remarkably, the Levinson theorem appears as the Poincaré index theorem for these closed trajectories. The VPM equation is also reduced to the nonrelativistic and semiclassical limits. The limit of a small momentum p{sub y} of transverse quantization is applicable to an arbitrary integrable potential. In this case, a single confined mode is predicted.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

On the atomic-number similarity of the binding energies of electrons in filled shells of elements of the periodic table

An expression for the binding energies of electrons in the ground state of an atom is derived on the basis of the Bohr–Sommerfeld quantization rule within the Thomas–Fermi model. The validity of this relation for all elements from neon to uranium is tested within a more perfect quantum-mechanical model with and without the inclusion of relativistic effects, as well as with experimental binding energies. As a result, the ordering of electronic levels in filled atomic shells is established, manifested in an approximate atomic-number similarity. It is proposed to use this scaling property to analytically estimate the binding energies of electrons in an arbitrary atom.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

On the Theory of Elastic Scattering of Particles

The problem of elastic scattering of particles has been considered by the potential quantization method. The properties of the eigenfunctions ϕ{sub ν}{sup (+)}(r) and eigenvalues α{sub ν}{sup (+)} of this method for states with positive energies (continuous spectrum) have been studied. Under the assumption of the completeness of the set {ϕ_ν"("+")(r)}, the problem has been solved by expanding the desired wavefunction in this set. The proposed approach reproduces known results in all considered limiting cases. At the same time, it gives a more detailed description of the scattering amplitude than the standard phase theory.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2013

Hamiltonian anomalies of bound states in QED

The Bound State in QED is described in systematic way by means of nonlocal irreducible representations of the nonhomogeneous Poincare group and Dirac's method of quantization. As an example of application of this method we calculate triangle diagram Para-Positronium {yields} {gamma}{gamma}. We show that the Hamiltonian approach to Bound State in QED leads to anomaly-type contribution to creation of pair of parapositronium by two photon.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Wave functions and mass spectrum for a system of two relativistic spinor quarks coupled by a chromodynamical interaction

Exact solutions of relativistic quasipotential equations in the configuration representation were found for a system of two spin-1/2 quarks interacting via a Coulomb-like chromodynamical potential. Quantization conditions were found for the pseudoscalar, pseudovector, and vector cases. The present analysis was performed within the Hamiltonian formulation of quantum field theory via a transition to the relativistic configuration representation for the case of two relativistic spin-1/2 quarks of equal mass.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2015

Electron-phonon interaction in three-barrier nanosystems as active elements of quantum cascade detectors

The theory of electron tunneling through an open nanostructure as an active element of a quantum cascade detector is developed, which takes into account the interaction of electrons with confined and interface phonons. Using the method of finite-temperature Green’s functions and the electron-phonon Hamiltonian in the representation of second quantization over all system variables, the temperature shifts and electron-level widths are calculated and the contributions of different electron-phonon-interaction mechanisms to renormalization of the spectral parameters are analyzed depending on the geometrical configuration of the nanosystem. Due to weak electron-phonon coupling in a GaAs/Al{sub 0.34}Ga{sub 0.66}As-based resonant tunneling nanostructure, the temperature shift and rf field absorption peak width are not very sensitive to the electron-phonon interaction and result from a decrease in potential barrier heights caused by a difference in the temperature dependences of the well and barrier band gaps.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells

The photoluminescence and intersubband absorption spectra are studied in GaAs/AlGaAs tunnel- coupled quantum well structures. The peak positions in the photoluminescence and absorption spectra are consistent with the theoretically calculated energies of optical carrier transitions. The effect of a transverse electric field and temperature on intersubband light absorption is studied. It is caused by electron redistribution between the size-quantization levels and a variation in the energy spectrum of quantum wells. The variation in the refractive index in the energy region of observed intersubband transitions is estimated using Kramers–Kronig relations.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Local emission spectroscopy of surface micrograins in A{sup III}B{sup V} semiconductors

The density-of-states spectra and the parameters of levels of electron states in locally chosen surface micrograins of indium antimonide and arsenide and gallium arsenide are studied with a tunneling electron microscope in the field-emission mode of measurements. By correlating the current–voltage characteristics with the formula for the probability of emission via levels, the activation energies of the levels (ψ) and the lifetimes of electrons at the levels (τ) are determined. Two types of levels for electron localization are identified. These are levels in the micrograin bulk (ψ ≈ 0.75, 1.15, and 1.59 eV for n-InSb, n-InAs, and n-GaAs, respectively; τ ~ 10{sup –8}–10{sup –7} s) and in the surface region of an i-InSb micrograin (ψ ~ 0.73, 1.33, 1.85, 2.15, 5.1 eV; τ ≈ 5 × 10{sup –8}–3 × 10{sup –7} s). A physical model involving the Coulomb-interaction-induced localization of light electrons and their size quantization determined by the electron effective mass, energy, and concentration and by the surface curvature of the micrograin is proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

On the condensation of exciton polaritons in microcavities induced by a magnetic field

The photoluminescence spectra of exciton polaritons in microcavities under conditions of three-dimensional quantization are studied as a factor of the density of the optical excitation and magnetic field. The behavior of the degree of circular polarization of the exciton luminescence in a magnetic field shows that, when the concentration of excitons increases, they condense at the lowest Zeeman sublevel.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Valence-band offsets in strained SiGeSn/Si layers with different tin contents

Admittance spectroscopy is used to study hole states in Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y}/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y} layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y} heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si{sub 0.7–y}Ge{sub 0.3}Sn{sub y} layers and Si on the tin content is described by the expression ΔE{sub V}{sup exp} = (0.21 ± 0.01) + (3.35 ± 7.8 × 10{sup –4})y eV.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Mechanism and Features of Field Emission in Semiconductors

The field electron emission from individual grains on the surface of Si and III–V semiconductors, namely, gallium arsenide, indium arsenide, and indium antimonide is investigated by scanning tunneling microscopy. From the correspondence of the functional dependence of the I–V characteristic to the theory, the emission mechanism is determined as direct tunneling through a depleted or enriched subsurface layer at the voltages V < 1 V and the tunneling emission from the surface electronic states at the voltages V > 1 V. A field-emission threshold of (1–5) × 10{sup 6} V/cm is obtained, which is significantly lower than the values for metals and carbon. The determining factors of this emission mechanism are the Schottky effect, the localization and size quantization of “light” electrons in the surface area of III–V semiconductors, and the presence of a subsurface depletion layer in silicon. According to the data obtained for the values of the field-emission threshold, indium antimonide in the form of submicron grain particles is the most efficient field emitter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Micromagnetic Modeling of Spin-Wave Excitations in Corrugated YIG Films

In this paper, we study the features of the spin-wave excitation spectrum in a YIG film with a thickness of 0.4 μm and a magnetization of 1.1 kG corrugated due to the periodic relief of the substrate in the form of grooves with a width of 10 μm and a depth of 0.5 μm, with sloping walls, and a period of 20 μm by micromagnetic modeling. Calculations performed for the orientations of the external magnetic field applied in the film plane along (θ = 0) and across (θ = 90°) grooves show that film shape anisotropy leads to quantization of the spectrum and localization of the spin-wave excitations in various parts of the sample. In this case, the spatial distribution of the magnetization amplitude at frequencies in the spectrum at θ = 90° can be characterized by several spatial scales, differing by orders of magnitude. This is explained by the strong inhomogeneity of the ground state on the walls of the grooves at θ = 90°, which leads to the effective excitation of the short-wave part of the spectrum of spin waves in a periodic structure according to the Schlömann mechanism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Peculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping

The influence of the concentration of silicon donors on the electron-transport properties of pseudomorphous Al{sub 0.25}Ga{sub 0.75}As/In{sub 0.2}Ga{sub 0.8}As/GaAs quantum wells (QWs) in heterostructures with heavy unilateral δ-doping by Si atoms was studied in a broad temperature interval (2.1–300 K). High electron mobility (up to 35700 cm{sup 2}/(V s)) at T = 4.2 K was observed at a 2D (sheet) electron density of 2 × 10{sup 12} cm{sup –2} in the QW. A band mechanism limiting the ionization of donors at an increased level of doping is described. The nonmonotonic variation of electron mobility with increasing silicon concentration is explained. A growth in the mobility is related to increase in the Fermi momentum and screening, while the subsequent decay is caused by tunneling-induced degradation of the spacer layer with decreasing potential of the conduction band in the region of δ-Si layer. It is shown that the effect is not related to filling of the upper subband of dimensional quantization.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors

Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

77 NANOSCIENCE AND NANOTECHNOLOGY↗