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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

A possible energy source to power stable auroral red arcs - Precipitating electrons

Results of coincident measurements by ground-based photometers and the low-altitude plasma instrument on board the Dynamics Explorer 2 satellite are presented that demonstrate the association of precipitating low-energy electrons with stable auroral red (SAR) arcs. A search of available data has yielded 23 instances of DE 2 overflights during the presence of SAR arcs being monitored by the photometers. For each case, downward fluxes of electrons are found to be enhanced along field lines penetrating the arcs in relation to regions both north and south of the features. Modeling of the atmospheric response to these influxes indicates that these electrons can represent a major source of the energy required to establish temperature profiles within the ionospheric electron gas that are sufficient to produce the recorded 6300-A emission rates. The sensitivity of these results to uncertainties of the assumed spacecraft potential and thermospheric composition has been investigated and found to be important, but does not alter the conclusion that precipitating electrons are a fundamental link in the production of SAR arcs.

Slater, D. W.↗
NASA NTRS2000

High Voltage Design Concepts for Launch Vehicles and Orbital Spacecraft Applications

With the advent of design concepts such as, electromechanical actuation and "more electric" initiatives, has come the need for electrical power buses and electronic equipment to operate at higher than normal dc voltages to meet power requirements while keeping current levels to manageable levels. This new bus voltage has been typically 270 Volts dc nominal for launch vehicles, and 120 Volt dc for the International Space Station. This paper will discuss the new design applications for high voltage dc power in existing and future launch vehicles and spacecraft and the potential problems associated therewith. These new applications must be operational from lift-off, ascent, on orbit and descent in all of the pressure and temperature conditions for each, i.e. through the "Paschen region" twice. This paper will also attempt to stimulate an interest in the academic and professional communities to support and conduct research needed for design data applicable to high voltage dc usage.

Hall, David K.↗
NASA NTRS2002

Advanced Self-Calibrating, Self-Repairing Data Acquisition System

An improved self-calibrating and self-repairing Data Acquisition System (DAS) for use in inaccessible areas, such as onboard spacecraft, and capable of autonomously performing required system health checks, failure detection. When required, self-repair is implemented utilizing a "spare parts/tool box" system. The available number of spare components primarily depends upon each component's predicted reliability which may be determined using Mean Time Between Failures (MTBF) analysis. Failing or degrading components are electronically removed and disabled to reduce power consumption, before being electronically replaced with spare components.

Pedro J Medelius↗
NASA NTRS2004

Post-Test Analysis of the Deep Space One Spare Flight Thruster Ion Optics

The Deep Space 1 (DSl) spare flight thruster (FT2) was operated for 30,352 hours during the extended life test (ELT). The test was performed to validate the service life of the thruster, study known and identify unknown life limiting modes. Several of the known life limiting modes involve the ion optics system. These include loss of structural integrity for either the screen grid or accelerator grid due to sputter erosion from energetic ions striking the grid, sputter erosion enlargement of the accelerator grid apertures to the point where the accelerator grid power supply can no longer prevent electron backstreaming, unclearable shorting between the grids causes by flakes of sputtered material, and rouge hole formation due to flakes of material defocusing the ion beam. Grid gap decrease, which increases the probability of electron backstreaming and of arcing between the grids, was identified as an additional life limiting mechanism after the test. A combination of accelerator grid aperture enlargement and grid gap decrease resulted in the inability to prevent electron backstreaming at full power at 26,000 hours of the ELT. Through pits had eroded through the accelerator grid webbing and grooves had penetrated through 45% of the grid thickness in the center of the grid. The upstream surface of the screen grid eroded in a chamfered pattern around the holes in the central portion of the grid. Sputter deposited material, from the accelerator grid, adhered to the downstream surface of the screen grid and did not spall to form flakes. Although a small amount of sputter deposited material protruded into the screen grid apertures, no rouge holes were found after the ELT.

NASA Solar electric propulsion Technology Applicat↗
NASA NTRS2011

High-Performance Wireless Telemetry

Prior technology for machinery data acquisition used slip rings, FM radio communication, or non-real-time digital communication. Slip rings are often noisy, require much space that may not be available, and require access to the shaft, which may not be possible. FM radio is not accurate or stable, and is limited in the number of channels, often with channel crosstalk, and intermittent as the shaft rotates. Non-real-time digital communication is very popular, but complex, with long development time, and objections from users who need continuous waveforms from many channels. This innovation extends the amount of information conveyed from a rotating machine to a data acquisition system while keeping the development time short and keeping the rotating electronics simple, compact, stable, and rugged. The data are all real time. The product of the number of channels, times the bit resolution, times the update rate, gives a data rate higher than available by older methods. The telemetry system consists of a data-receiving rack that supplies magnetically coupled power to a rotating instrument amplifier ring in the machine being monitored. The ring digitizes the data and magnetically couples the data back to the rack, where it is made available. The transformer is generally a ring positioned around the axis of rotation with one side of the transformer free to rotate and the other side held stationary. The windings are laid in the ring; this gives the data immunity to any rotation that may occur. A medium-frequency sine-wave power source in a rack supplies power through a cable to a rotating ring transformer that passes the power on to a rotating set of electronics. The electronics power a set of up to 40 sensors and provides instrument amplifiers for the sensors. The outputs from the amplifiers are filtered and multiplexed into a serial ADC. The output from the ADC is connected to another rotating ring transformer that conveys the serial data from the rotating section to the stationary section. From there, a cable conveys the serial data to the remote rack, where it is reconditioned to logic level specifications, de-serialized, and converted back to analog. In the rotating electronics are code generators to indicate the beginning of files for data synchronization.

Griebeler, Elmer↗
NASA NTRS1975

Power processing for electric propulsion

The inclusion of electric thruster systems in spacecraft design is considered. The propulsion requirements of such spacecraft dictate a wide range of thruster power levels and operational lifetimes, which must be matched by lightweight, efficient, and reliable thruster power processing systems. Electron bombardment ion thruster requirements are presented, and the performance characteristics of present power processing systems are reviewed. Design philosophies and alternatives in areas such as inverter type, arc protection, and control methods are discussed along with future performance potentials for meeting goals in the areas of power process or weight (10 kg/kW), efficiency (approaching 92 percent), reliability (0.96 for 15,000 hr), and thermal control capability (0.3 to 5 AU).

Finke, R. C.↗
NASA NTRS1993

Energetics and timing of the hard and soft X-ray emissions in white light flares

By comparing the light curves in optical, hard X-ray, and soft X-ray wavelengths for eight well-observed flares, we confirm previous results indicating that the white light flare (WLF) is associated with the flare impulsive phase. The WLF emission peaks within seconds after the associated hard X-ray peak, and nearly two minutes before the 1-8 A soft X-ray peak. It is further shown that the peak power in nonthermal electrons above 50 keV is typically an order of magnitude larger, and the power in 1-8 A soft X-rays radiated over 2pi sr, at the time of the WLF peak, is an order of magnitude smaller than the peak WLF power.

Neidig, Donald F.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS1973

Spectral development of a solar X-ray burst observed on OSO-7.

The UCSD solar X-ray instrument on the OSO-7 satellite observes X-ray bursts in the 2- to 300-keV range with 10.24-sec time resolution. Spectra obtained from the proportional counter and scintillation counter are analyzed for the event of Nov. 16, 1971, at 0519 UT in terms of thermal (exponential spectrum) and nonthermal (power law) components. The energy content of the approximately 20,000,000 K thermal plasma increased with the 60-sec duration hard X-ray burst, which entirely preceded the 5-keV soft X-ray maximum. If the hard X-rays arise by thick target bremsstrahlung, the nonthermal electrons above 10 keV have sufficient energy to heat the thermally emitting plasma. In the thin target case the collisional energy transfer from nonthermal electrons suffices if the power law electron spectrum is extrapolated below 10 keV, or if the ambient plasma density exceeds 4 x 10 to the 10th power per cu cm.

Mckenzie, D. L.↗
NASA NTRS2011

Sub-Shot Noise Power Source for Microelectronics

Low-current, high-impedance microelectronic devices can be affected by electric current shot noise more than they are affected by Nyquist noise, even at room temperature. An approach to implementing a sub-shot noise current source for powering such devices is based on direct conversion of amplitude-squeezed light to photocurrent. The phenomenon of optical squeezing allows for the optical measurements below the fundamental shot noise limit, which would be impossible in the domain of classical optics. This becomes possible by affecting the statistical properties of photons in an optical mode, which can be considered as a case of information encoding. Once encoded, the information describing the photon (or any other elementary excitations) statistics can be also transmitted. In fact, it is such information transduction from optics to an electronics circuit, via photoelectric effect, that has allowed the observation of the optical squeezing. It is very difficult, if not technically impossible, to directly measure the statistical distribution of optical photons except at extremely low light level. The photoelectric current, on the other hand, can be easily analyzed using RF spectrum analyzers. Once it was observed that the photocurrent noise generated by a tested light source in question is below the shot noise limit (e.g. produced by a coherent light beam), it was concluded that the light source in question possess the property of amplitude squeezing. The main novelty of this technology is to turn this well-known information transduction approach around. Instead of studying the statistical property of an optical mode by measuring the photoelectron statistics, an amplitude-squeezed light source and a high-efficiency linear photodiode are used to generate photocurrent with sub-Poissonian electron statistics. By powering microelectronic devices with this current source, their performance can be improved, especially their noise parameters. Therefore, a room-temperature sub-shot noise current source can be built that will be beneficial for a very broad range of low-power, low-noise electronic instruments and applications, both cryogenic and room-temperature. Taking advantage of recent demonstrations of the squeezed light sources based on optical micro-disks, this sub-shot noise current source can be made compatible with the size/power requirements specific of the electronic devices it will support.

Strekalov, Dmitry V.↗
NASA NTRS1981

Ionic conductivity and thermoelectric power of pure and Al2O3-dispersed AgI

Ionic and electronic conductivities, and thermoelectric power have been measured for AgI and AgI containing a dispersion of submicron size Al2O3 particles. While the dispersion of Al2O3 enhances the ionic conductivity significantly, it does not affect the electronic properties of the matrix. The enhancement is a strong function of the size and concentration of the dispersoid. Various models have been tested to account for the enhanced conduction. However, the complex behavior of the present results points out the need for more sophisticated theoretical models. Ionic conduction and thermoelectric power data suggest that the dispersed Al2O3 generates an excess of cation vacancies and thereby enhances the conductivity and suppresses the thermoelectric power of the matrix. The individual heats of transport of cation interstitials and vacancies have been estimated and compared to their respective migration energies.

Shahi, K.↗
NASA NTRS2017

Silicon Power MOSFETs

Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.

trench-gate MOSFET↗
NASA NTRS1980

Rocket observations at the northern edge of the eastward electrojet

The paper discusses a Nike-Tomahawk rocket launched north over quiet, late evening auroral arcs in March 1975. A northward magnetic disturbance was observed on the ground under the rocket trajectory; south of the arcs the northward electric field was 60 mV/m, indicating strong westward plasma flow. An eastward electrojet current layer was penetrated in the upward flight, and precipitating electrons were observed over each arc. Using the observed electron flux and a model of the ionosphere, the Hall and Pedersen conductivities were calculated which were used to compute the eastward and northward components of the horizontal ionospheric currents. The joule power decreased abruptly in the auroral arcs, as the precipitating electron power increased; the total dissipated power was the same inside the arcs, between them and southward. North of the aurora the electric field and dissipated power remained low; field-aligned currents carried by the observed electrons were about a factor of 3 lower than those inferred from the magnetic field measurements.

Cahill, L. J., Jr.↗
NASA NTRS1973

Development of a uninterrupted power system: ac and dc to dc converter

This program covered the design, fabrication and testing of an advanced development model uninterrupted power system. The input and output requirements imposed on the power processor were specified such that the unit is electrically interchangeable with existing power systems used by the Federal Aviation Administration in installations which have a history of failure due to electrical transient conditions. Input power is from either of two single-phase ac power sources or batteries with electronic selection and transfer between power sources. Battery reconditioning is automatic when either ac source is present. The output power is rated at 84OW; the nominal output is 24V at 35A. Within the 84OW limit, the regulated output voltage is adjustable from 22V to 30Vdc. Protection against continuous overloading or short circuit is provided. The unit is packaged in a standard 19-inch rack mount configuration with 7-inch panel height. Controls are on the front panel with power input and output through connectors on the rear surface. Cooling is by free convection from fin areas located on the side and rear panels. The packaged unit weighs 52.8 lbs., which can be reduced significantly if a three-phase ac power source is used.

Cronin, D. L.↗
NASA NTRS2007

Fluence Uniformity Measurements in an Electron Accelerator Used for Irradiation of Extended Area Solar Cells and Electronic Circuits for Space Applications

It is common to have liquid crystal displays and electronic circuit boards with area sizes of the order of 20x20 sq cm on board of satellites and space vehicles. Usually irradiating them at different fluence values assesses the radiation damage in these types of devices. As a result, there is a need for a radiation source with large spatial fluence uniformity for the study of the damage by radiation from space in those devices. Kent State University s Program on Electron Beam Technology has access to an electron accelerator used for both research and industrial applications. The electron accelerator produces electrons with energies in the interval from 1 to 5 MeV and a maximum beam power of 150 kW. At such high power levels, the electron beam is continuously scanned back and forth in one dimension in order to provide uniform irradiation and to prevent damage to the sample. This allows for the uniform irradiation of samples with an area of up to 1.32 sq m. This accelerator has been used in the past for the study of radiation damage in solar cells (1). However in order to irradiate extended area solar cells there was a need to measure the uniformity of the irradiation zone in terms of fluence. In this paper the methodology to measure the fluence uniformity on a sample handling system (linear motion system), used for the irradiation of research samples, along the irradiation zone of the above-mentioned facility is described and the results presented. We also illustrate the use of the electron accelerator for the irradiation of large area solar cells (of the order of 156 sq cm) and include in this paper the electrical characterization of these types of solar cells irradiated with 5 MeV electrons to a total fluence of 2.6 x 10(exp 15) e/sq cm.

Uribe, Roberto M.↗
NASA NTRS2022

Silicon Carbide Sensors and Electronics Technology for Extreme Environments: Opportunities for Nuclear Power Applications

Over the past five decades, NASA Glenn Research Center had been advancing the development of single crystal silicon carbide growth, sensors and electronics device technologies, culminating in the recent demonstration of Micro-Electro-Mechanical Systems scale batch fabricated pressure sensors operating at 800 °C and integrated circuit electronics with demonstrated durability of over 1000 hours at 500 °C. As a result of the progress made in demonstrating the high temperature capability of the technology, insertion into actual operational environments, such as in jet engines and planet Venus, are in progress. The high temperature, near inert surface chemistry, and radiation hardness attributes of SiC, coupled with the relative maturation of the device batch microfabrication, contact metallization, and packaging technologies, make the material a prime candidate for use as part of future advanced nuclear reactor instrumentation and control strategy. Hence the current research efforts at NASA Glenn are aimed toward harnessing these attributes in developing SiC sensors and electronics for nuclear reactor applications, potentially for future Lunar/Martian nuclear power and the emerging terrestrial micro nuclear power plants.

silicon carbide↗