Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “electrical switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 919 records · Page 51

Substation-Level Grid Topology Optimization Using Bus Splitting

Operations of substation circuit breakers are important for maintenance needs and topology reconfiguration in power systems. Bus splitting is one type of topology change where the two bus bars at a substation can become electrically disconnected under certain actions of circuit breakers. Because these events involve detailed substation modeling, they are typically not considered in routine power system operation and control. In this paper, an improved substation-level topology optimization framework is developed by expanding traditional line switching decisions by breaker-level bus splitting, which can further reduce grid congestion and generation costs. A tight McCormick relaxation is proposed to reformulate the bilinear terms in the resultant optimization problem to linear inequality constraints. Thus, a tractable mixed-integer linear program reformulation is attained that allows for efficient solutions in real-time operations. Numerical studies on the IEEE 14-bus and 118-bus systems demonstrate the computational performance and economic benefits of the proposed topology optimization approach.

bus split↗

High-current, fast-switching transistor development

The design, wafer-processing techniques, and various measurements which include forward safe operating area, dc characteristics, and switching times are described for a larger-diameter (33) transistor. An improved base contact for equalizing the base-emitter voltage at high currents was developed along with an improved emitter contact preform which increases the silicon area available for current conduction. The electrical performance achieved is consistent with the proposed optimum design.

Hower, P. L.↗

Development of Electronic Load Controllers for Free-Piston Stirling Convertors Aided by Stirling Simulation Model

The free-piston Stirling convertor end-to-end modeling effort at the NASA Glenn Research Center has produced a software-based test bed in which free-piston Stirling convertors can be simulated and evaluated. The simulation model includes all the components of the convertor: the Stirling cycle engine, heat source, linear alternator, controller, and load. So far, it has been used in evaluating the performance of electronic controller designs. Three different controller design concepts were simulated using the model: 1) Controllers with parasitic direct current loading. 2) Controllers with parasitic alternating current loading. 3) Controllers that maintain a reference current. The free-piston Stirling convertor is an electromechanical device that operates at resonance. It is the function of the electronic load controller to ensure that the electrical load seen by the machine is always great enough to keep the amplitude of the piston and alternator oscillation at the rated value. This is done by regulating the load on the output bus. The controller monitors the instantaneous voltage, regulating it by switching loads called parasitic loads onto the bus whenever the bus voltage is too high and removing them whenever the voltage is too low. In the first type of controller, the monitor-ing and switching are done on the direct-current (dc) bus. In the second type, the alternating current bus is used. The model allows designers to test a controller concept before investing time in hardware. The simulation code used to develop the model also offers detailed models of digital and analog electronic components so that the resulting designs are realistic enough to translate directly into hardware circuits.

Regan, Timothy F.↗

An Overview of Policies Influencing Air Pollution from the Electricity Sector in Central Asia

The electricity sector is a substantial source of air pollution and associated health problems in Central Asia and elsewhere. Fossil-fueled power plants emit a wide variety of harmful pollutants and their chemical precursors. The pollutants with the greatest health impacts are particulate matter and ozone. Once released into the atmosphere, there is no practical way to remove air pollutants, which means that policies designed to improve air quality have to limit the pollutants before release. However, tackling such pollution is challenging, particularly in developing economies, due to the need to provide electricity as a basic necessity for citizens and as an engine of economic growth. This report provides examples of policies impacting air pollution from the electricity sector in the Central Asian countries of Kazakhstan, Kyrgyzstan, Tajikistan, Turkmenistan, and Uzbekistan. It is a partner publication to an earlier report that addressed policies in South Asia. As with the South Asia report, information on policies in some countries was difficult to locate; therefore, this is not a comprehensive study, but rather an overview or "scan" of the sector that includes examples of: (1) policies that directly regulate air quality by limiting emissions from specific point sources (by restricting operating hours, for instance); and (2) indirect policies that incentivize or disincentivize polluting activities, such as policies to encourage fuel switching to or from cleaner renewable resources. Note that this report was prepared before the Russia-Ukraine conflict and therefore doesn't address consequences of that war for Central Asia. The report finds: (1) That Central Asian countries typically have relatively few policy instruments available for regulating national air emissions; (2) That many countries, especially those that have a mismatch between seasonal demand and resource availability, could improve energy security and reduce air pollution through increased cross-border electricity trade; (3) That some countries have seemingly contradictory policies (promoting both coal and renewables, for instance). This report is also available in Russian: https://www.nrel.gov/docs/fy23osti/85192.pdf.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗

Predicting the onset of metal-insulator transitions in transition metal oxides-A first step in designing neuromorphic devices.

Several transition metal oxides, including La1-xSrxCoO3, are promising materials to realize resistive switching devices for neuromorphic applications, as they can undergo a metal-to-insulator transition (MIT) upon small perturbations to their electronic structure. Here, we focus on the MIT induced by varying the oxygen vacancy concentration, and we propose a model to predict the required electrical bias, based on three fundamental quantities: the vacancy formation energy, the permanent polarization in the material, and its dielectric constant. We obtain these quantities using first-principles electronic structure calculations, and we discuss strategies to minimize the electrical bias which may be adopted experimentally to design and optimize neuromorphic devices.

Zhang, Shenli↗

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗

Spin Effects in Low Dimensional Correlated Systems (Final Technical Report)

Our program focuses on the behavior of two-dimensional superconducting systems that have been placed in high magnetic fields and/or in contact with magnetic materials. Our specific research agenda is organized into two separate but related areas. The first is a study of disorder and correlation effects in extremely thin superconducting aluminum, beryllium, and rhenium films that have been subjected to very high magnetic fields. We are particularly interested in understanding how the coupling between the applied field and the electron spins affects the system’s ability to form superconducting state. We now have good evidence that as the electron spins in these superconductors attempt to align to the magnetic field, a new superconducting phase emerges near the critical field transition and that this phase has a significant influence on the character of the transition. Thus, the spin behavior near the transition is much more complex than expected. The second class of systems is proximity structures comprised of superconducting/ferromagnetic (SC/FM) and superconducting/heavy metal (SC/HM) bilayers. We have developed spin-resolved tunneling probes that give us a direct measure of the proximity-induced exchange field in the SC/FM structures, as well as the spin-orbit scattering rate in SC/HM structures. Recently we have demonstrated that the magnitude of the exchange field can be modulated with an external gate, thereby producing a magneto-electric response in the bilayers. We plan to optimize this magneto-electric effect by getting a better understanding of the microscopic mechanism of the interface-induce exchange field, as well as improving the gate barriers and/or the bilayer interface quality. The ultimate goal is to develop a device such as a voltage-controlled superconducting switch or a spin- polarized electron source with a voltage-tunable Zeeman splitting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Hearing aid malfunction detection system

A malfunction detection system for detecting malfunctions in electrical signal processing circuits is disclosed. Malfunctions of a hearing aid in the form of frequency distortion and/or inadequate amplification by the hearing aid amplifier, as well as weakening of the hearing aid power supply are detectable. A test signal is generated and a timed switching circuit periodically applies the test signal to the input of the hearing aid amplifier in place of the input signal from the microphone. The resulting amplifier output is compared with the input test signal used as a reference signal. The hearing aid battery voltage is also periodically compared to a reference voltage. Deviations from the references beyond preset limits cause a warning system to operate.

Kessinger, R. L.↗

100 kWe MPD thruster system design

A MPD thruster subsystem point design is presented that may be applicable to a wide variety of NASA/DoD missions. The system is electrically matched to a 100 kWe thermoelectric-nuclear supply and operates the thruster in a pulsed, quasi-steady mode on cryogenically stored argon. The overall system efficiency is 52% which includes efficiencies of the electrolytic capacitor energy store, constant power charging unit, thyristor switch, and assumes a 60% thruster efficiency. The system specific mass is 21.6 kg/kWe. Various technology improvements are discussed which could reduce the specific mass to under 10 kg/kWe, while simultaneously increasing the efficiency and reducing the overall subsystem complexity.

King, D. Q.↗

Analysis of the 60-Hz power system at KSC: The Orsino substation

An analysis of the Orsino Substation, a component (50 percent) of the 60-Hertz electric power system at the Kennedy Space Center, is presented. Presented here are separate single-line diagrams of the sixteen feeder circuits to permit easy access to information on the individual feeders for future planning. The load condition of each feeder and load break switch are presented and a heuristic reliability analysis of the system is performed. Information is given about the system fashion useful for decision making purposes. The beauty of it is in the simplified manner by which information about the system can be obtained.

Kalu, Alex O.↗

The 10 kW power electronics for hydrogen arcjets

A combination of emerging mission considerations such as 'launch on schedule', resource limitations, and the development of higher power spacecraft busses has resulted in renewed interest in high power hydrogen arcjet systems with specific impulses greater than 1000 s for Earth-space orbit transfer and maneuver applications. Solar electric propulsion systems with about 10 kW of power appear to offer payload benefits at acceptable trip times. This work outlines the design and development of 10 kW hydrogen arcjet power electronics and results of arcjet integration testing. The power electronics incorporated a full bridge switching topology similar to that employed in state of the art 5 kW power electronics, and the output filter included an output current averaging inductor with an integral pulse generation winding for arcjet ignition. Phase shifted, pulse width modulation with current mode control was used to regulate the current delivered to arcjet, and a low inductance power stage minimized switching transients. Hybrid power Metal Oxide Semiconductor Field Effect Transistors were used to minimize conduction losses. Switching losses were minimized using a fast response, optically isolated, totem-pole gate drive circuit. The input bus voltage for the unit was 150 V, with a maximum output voltage of 225 V. The switching frequency of 20 kHz was a compromise between mass savings and higher efficiency. Power conversion efficiencies in excess of 0.94 were demonstrated, along with steady state load current regulation of 1 percent. The power electronics were successfully integrated with a 10 kW laboratory hydrogen arcjet, and reliable, nondestructive starts and transitions to steady state operation were demonstrated. The estimated specific mass for a flight packaged unit was 2 kg/kW.

Hamley, John A.↗

High frequency, small signal MH loops of ferromagnetic thin films

A method is presented for transforming the high frequency bias susceptibility measurements of ferromagnetic thin films into the form of a MH loop with, depending upon the measurement geometry, the y-axis zero crossing giving a measure of the coercive force or anisotropy field. The loops provide a measure of the quantitative and qualitative high frequency switching properties of ferromagnetic thin films. c2000 American Institute of Physics.

NASA Discipline Life Sciences Technologies↗

Free-to-Roll Testing of Airplane Models in Wind Tunnels

A free-to-roll (FTR) test technique and test rig make it possible to evaluate both the transonic performance and the wingdrop/ rock behavior of a high-strength airplane model in a single wind-tunnel entry. The free-to-roll test technique is a single degree-of-motion method in which the model is free to roll about the longitudinal axis. The rolling motion is observed, recorded, and analyzed to gain insight into wing-drop/rock behavior. Wing-drop/rock is one of several phenomena symptomatic of abrupt wing stall. FTR testing was developed as part of the NASA/Navy Abrupt Wing Stall Program, which was established for the purposes of understanding and preventing significant unexpected and uncommanded (thus, highly undesirable) lateral-directional motions associated with wing-drop/rock, which have been observed mostly in fighter airplanes under high-subsonic and transonic maneuvering conditions. Before FTR testing became available, wingrock/ drop behavior of high-performance airplanes undergoing development was not recognized until flight testing. FTR testing is a reliable means of detecting, and evaluating design modifications for reducing or preventing, very complex abrupt wing stall phenomena in a ground facility prior to flight testing. The FTR test rig was designed to replace an older sting attachment butt, such that a model with its force balance and support sting could freely rotate about the longitudinal axis. The rig (see figure) includes a rotary head supported in a stationary head with a forward spherical roller bearing and an aft needle bearing. Rotation is amplified by a set of gears and measured by a shaft-angle resolver; the roll angle can be resolved to within 0.067 degrees at a rotational speed up to 1,000 degrees/s. An assembly of electrically actuated brakes between the rotary and stationary heads can be used to hold the model against a rolling torque at a commanded roll angle. When static testing is required, a locking bar is used to fix the rotating head rigidly to the stationary head. Switching between the static and FTR test modes takes only about 30 minutes. The FTR test rig was originally mounted in a 16-ft (approximately 4.0-m) transonic wind tunnel, but could just as well be adapted to use in any large wind tunnel. In one series of tests on the FTR rig, static and dynamic characteristics of models of four different fighter airplanes were measured. Two of the models exhibited uncommanded lateral motions; the other two did not. A figure of merit was developed to discern the severity of lateral motions. Using this figure of merit, it was shown that the FTR test technique enabled identification of conditions under which the uncommanded lateral motions occurred. The wind-tunnel conditions thus identified were found to be correlated with flight conditions under which the corresponding full-size airplanes exhibited uncommanded lateral motions.

Capone, Francis J.↗

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗

Polymer Nanofiber Based Reversible Nano-Switch/Sensor Schottky Diode (Nanosssd) Device

A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device.

Miranda, Felix A.↗

Anomalously abrupt switching of wurtzite-structured ferroelectrics: simultaneous non-linear nucleation and growth model

Ferroelectric polarization switching is one common example of a process that occurs via nucleation and growth, and understanding switching kinetics is crucial for applications such as ferroelectric memory. Here we describe and interpret anomalous switching dynamics in the wurtzite-structured nitride thin film ferroelectrics Al 0.7 Sc 0.3 N and Al 0.94 B 0.06 N using a general model that can be directly applied to other abrupt transitions that proceed via nucleation and growth. When substantial growth and impingement occur while nucleation rate is increasing, such as in these wurtzite-structured ferroelectrics under high electric fields, abrupt polarization reversal leads to very large Avrami coefficients ( e.g., n = 11), inspiring an extension of the KAI (Kolmogorov–Avrami–Ishibashi) model. We apply this extended model to two related but distinct scenarios that crossover between (typical) behavior described by sequential nucleation and growth and a more abrupt transition arising from significant growth prior to peak nucleation rate. This work therefore provides a more complete description of general nucleation and growth kinetics applicable to any system while specifically addressing the anomalously abrupt polarization reversal behavior in new wurtzite-structured ferroelectrics.

36 MATERIALS SCIENCE↗

Demonstrating the β-Ga 2 O 3 Schottky diodes for alpha radiation detection

Schottky barrier diodes were fabricated on (001) monoclinic β-Ga 2 O 3 wafers with low doped epitaxial layers of 7.0 × 10 15 cm −3 . Circular Ni Schottky contacts with area 2 mm 2 were deposited by electron beam evaporation. Devices were characterized electrically by performing forward and reverse current-voltage sweeps with a range of −100 V–2 V, as well as capacitance-voltage sweeps to −30 V. The breakdown voltage was also determined to be −180 V for the devices. Experiments measuring the electrical response from incident X-ray radiation was performed. A response time to X-ray radiation of less than 1 s was recorded and a decay time of approximately 2 s after removing X-ray source, which primarily attribute to X-ray switching on and off time. Energy spectra of alpha particles from a 0.9 μCi 241 Am button source was collected at various voltage biases using devices with the lowest measured leakage current while reverse biased. The total count rate was observed to increase linearly with increasing device bias. In conclusion, the peak channel number was observed to increase with increasing bias with the best resolution of 9.5% at −100 V reverse bias.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Comparison of Simulation of Dual-Active Bridge in Different Simulators and Using Different Simulation Methods

The accuracy of states measured from simulation of a dual-active bridge (DAB) converter with an open-loop controller has been used for comparing simulation software and algorithms. The accuracy of the measured states is sensitive to simulation settings and parameters chosen. In this paper, the simulation of the DAB converter with open-loop control is run in the MATLAB/Simscape Electrical, PLECS, and PSCAD software environments, with various simulation settings. The simulation results are also compared with a new simulation algorithm proposed for DAB simulations. Different simulation settings are evaluated, including different solver types, operating conditions, and the on-state resistance values of the MOSFET switches. The simulation results are compared with the theoretical calculations. It is shown that unexpected divergence and DC offset may occur in some cases. This paper provides guidelines to simulate the DAB converter with open-loop control.

Yin, Shiyuan↗