One Nanometer HfO[subscript 2]-Based Ferroelectric Tunnel Junctions on Silicon
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Cheema, Suraj S.↗
SEARCH · Engineering Papers
Results for “electrical resistivity”
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Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths
Here, we present a telecommunication-compatible bias-free photoconductive terahertz emitter composed of a bilayer InAs structure directly grown on a high-resistivity silicon substrate. The bilayer InAs structure includes p + -doped and undoped InAs layers, inducing a strong built-in electric field that enables terahertz generation without requiring any external bias voltage. A large-area plasmonic nanoantenna array is used to enhance and confine optical generation inside the photoconductive region with the highest built-in electric field, leading to the generation of a strong ultrafast photocurrent and broadband terahertz radiation. Thanks to a higher terahertz transmission through the silicon substrate and a shorter carrier lifetime in the InAs layers grown on silicon, higher signal-to-noise ratios are achieved at high terahertz frequencies compared with previously demonstrated bias-free terahertz emitters realized on GaAs. In addition to compatibility with silicon integrated optoelectronic platforms, the presented bias-free photoconductive emitter provides more than a 6 THz radiation bandwidth with more than 100 dB dynamic range when used in a terahertz time-domain spectroscopy system.
42 ENGINEERING↗
Revised phase diagram of the high- T c cuprate superconductor Pb-doped Bi 2 Sr 2 CaCu 2 O 8 + δ revealed by anisotropic transport measurements
Although phase diagrams can be leveraged to investigate high transition temperature (high-T c ) superconductivity, the issue has not been discussed thoroughly. In this study, we elucidate the phase diagram of the overdoped side of high-T c cuprates via systematic anisotropic transport measurements for Pb-doped Bi-2212 single crystals. We demonstrate that the characteristic temperatures of the “weak” pseudogap opening and electronic coherence cross each other at a critical doping level, while those of the “strong” pseudogap merges into that of superconducting fluctuations above the critical doping level. Her the results indicate the importance of Mottness in high-T c superconductivity.
36 MATERIALS SCIENCE↗
Status of the Optical Dilatometer Method of Evaluating the Peak Irradiation Temperatures of SiC Passive Monitors
The main objective of this project was to conduct a comparative assessment between the optical dilatometer method and resistivity method, using all 10 SiC temperature monitors provided by two Nuclear Science User Facility experiments: BSU-8242 and General Electric Hitachi. Unfortunately, due to multiple delays in acquiring, shipping, and cleaning the SiC temperature monitors, the project was only able to process one (1) SiC temperature monitor during this period. SiC temperature monitor KGT-3357 was evaluated via the optical dilatometer method to determine its peak irradiation temperature. The KGT-3357 sample was from the BSU-8242 experiment and designed for a temperature of 300°C and an exposure of 1 dpa. The optical dilatometer measurements indicated that the KGT-3357 SiC temperature monitor’s peak irradiation temperature range was 240–267°C, with sensitivity of approximately ±20°C. Additionally, this temperature range falls within the evaluated melt wire temperature range of 238.6–271.5 °C. The remaining six (6) SiC temperature monitors from the BSU-8242 experiment and three (3) from the General Electric Hitachi experiment will be used in the future work to further validate the optical dilatometer method for measuring SiC peak irradiation temperatures.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Here we report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm 2 . The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm –1 . These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.
42 ENGINEERING↗
Zero-Knowledge Proofs to Verify Distributed Energy Resource (DER) Production - Phase I Final Technical Report
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29 ENERGY PLANNING, POLICY, AND ECONOMY↗
A molecular design approach towards elastic and multifunctional polymer electronics
Next-generation wearable electronics require enhanced mechanical robustness and device complexity. Besides previously reported softness and stretchability, desired merits for practical use include elasticity, solvent resistance, facile patternability and high charge carrier mobility. Here, we show a molecular design concept that simultaneously achieves all these targeted properties in both polymeric semiconductors and dielectrics, without compromising electrical performance. This is enabled by covalently-embedded in-situ rubber matrix (iRUM) formation through good mixing of iRUM precursors with polymer electronic materials, and finely-controlled composite film morphology built on azide crosslinking chemistry which leverages different reactivities with C–H and C=C bonds. The high covalent crosslinking density results in both superior elasticity and solvent resistance. When applied in stretchable transistors, the iRUM-semiconductor film retained its mobility after stretching to 100% strain, and exhibited record-high mobility retention of 1 cm 2 V -1 s -1 after 1000 stretching-releasing cycles at 50% strain. The cycling life was stably extended to 5000 cycles, five times longer than all reported semiconductors. Furthermore, we fabricated elastic transistors via consecutively photo-patterning of the dielectric and semiconducting layers, demonstrating the potential of solution-processed multilayer device manufacturing. The iRUM represents a molecule-level design approach towards robust skin-inspired electronics.
42 ENGINEERING↗
The synthesis and electrical transport properties of carbon/Cr 2 GaC MAX phase composite microwires
While MAX phases offer an exotic combination of ceramic and metallic properties, rendering them a unique class of materials, their applications remain virtually hypothetical. To overcome this shortcoming, a sol–gel based route is introduced that allows access to microwires in the range of tens of micrometers. Thorough structural characterization through XRD, SEM, EDS, and AFM demonstrates a successful synthesis of carbonaceous Cr2GaC wires, and advanced low temperature electronic transport measurements revealed resistivity behavior dominated by amorphous carbon. Here, the tunability of electronic behavior of the obtained microwires is shown by a halide post-synthesis treatment, allowing purposeful engineering of the microwires’ electrical conductivity. Raman studies revealed the polyanionic nature of the intercalated halides and a slow decrease in halide concentration was concluded from time-dependent conductivity measurements. Based on these findings, the process is considered a viable candidate for fabricating chemiresistive halogen gas sensors.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Modulation and Modeling of Three-Dimensional Nanowire Assemblies Targeting Gas Sensors with High Response and Reliability
Despite improved sensitivity, simple downsizing of gas-sensing components to randomly arranged nanostructures often faces challenges associated with unpredictable electrical conduction pathways. In the present study, controlled fabrication of three-dimensional (3D) metal oxide nanowire networks is demonstrated that can greatly improve both signal stability and sensor response compared to random nanowire arrays. For example, the highest ever reported H 2 S gas response value, and a 5 times lower relative standard deviation of baseline resistance than that of random nanowires assemblies, are achieved with the ordered 3D nanowire network. Systematic engineering of 3D geometries and their modeling, utilizing equivalent circuit components, provide additional insights into the electrical conduction and gas-sensing response of 3D assemblies, revealing the critical importance of wire-to-wire junction points and their arrangement. Here these findings suggest new design rules for both enhanced performance and reliability of chemical sensors, which may also be extended to other devices based on nanoscale building blocks.
36 MATERIALS SCIENCE↗
Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations
Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.
Brown, Timothy D. (ORCID:0000000347068355)↗
GdN/SmN superlattices; influence of a Zeeman/exchange conflict
GdN and SmN are two of the lanthanide nitrides, most of which are intrinsic ferromagnetic semiconductors. Superlattices comprising the pair offer a unique opportunity to investigate heterojunctions that feature simultaneous conductivity and magnetic interface influences. In this work, we report an investigation of these influences, using magnetisation and X-ray magnetic circular dichroism for magnetic effects, and magnetoresistance and Hall effect studies of their electrical conductance. Magnetic data show clear signatures of a conflicting Zeeman vs. interfacial exchange and the magnetic disruption that results, while resistivity and Hall measurements show conduction in both GdN and SmN.
36 MATERIALS SCIENCE↗
Topological surface states of semimetal TaSb 2
Topological surface states, protected by the global symmetry of the materials, are the keys to understanding various novel electrical, magnetic, and optical properties. TaSb 2 is a newly discovered topological material with unique transport phenomena, including negative magnetoresistance and resistivity plateau, whose microscopic understanding is yet to be reached. In this study, we investigate the electronic band structure of TaSb 2 using angle-resolved photoemission spectroscopy and density functional theory. Our analyses reveal distinct bulk and surface states in TaSb 2 , providing direct evidence of its topological nature. Notably, surface states predominate the electronic contribution near the Fermi level, while bulk bands are mostly located at higher binding energies. Our study underlines the importance of systematic investigations into the electronic structures of topological materials, offering insights into their fundamental properties and potential applications in future technologies.
36 MATERIALS SCIENCE↗
Vertically Aligned Carbon Nanotubes Grown on Copper Foil as Electrodes for Electrochemical Double Layer Capacitors
This study reports a binder-free, catalyst-free method for fabricating vertically aligned carbon nanotubes (VACNTs) directly on copper (Cu) foil using plasma-enhanced chemical vapor deposition (PECVD) for electrochemical double-layer capacitor (EDLC) applications. This approach eliminates the need for catalyst layers, polymeric binders, or substrate pre-treatments, simplifying electrode design and enhancing electrical integration. The resulting VACNTs form a dense, uniform, and porous array with strong adhesion to the Cu substrate, minimizing contact resistance and improving conductivity. Electrochemical analysis shows gravimetric specific capacitance (C grav ) and areal specific capacitance (C areal ) of 8 F g −1 and 3.5 mF cm −2 at a scan rate of 5 mV/s, with low equivalent series resistance (3.70 Ω) and charge transfer resistance (0.48 Ω), enabling efficient electron transport and rapid ion diffusion. The electrode demonstrates excellent rate capability and retains 92% of its initial specific capacitance after 3000 charge–discharge cycles, indicating strong cycling stability. These results demonstrate the potential of directly grown VACNT-based electrodes for high-performance EDLCs, particularly in applications requiring rapid charge–discharge cycles and sustained energy delivery.
25 ENERGY STORAGE↗
Influence of supplementary cementitious materials on microstructure and transport properties of spacer-concrete interface
Reinforcement spacers are a critical component of concrete structures. Their presence affects microstructure and transport properties of concrete cover though this is not widely appreciated. This paper presents the first study to determine whether the negative effects of spacers can be mitigated through the use of supplementary cementitious materials such as silica fume, fly ash and blast-furnace slag. Concrete samples (>200) with different spacers, binders, curing and drying regimes were prepared and tested for diffusion, permeation, absorption, electrical conductivity, carbonation and microstructure. It was found that spacers increase all transport properties, the extent depending on type of spacer, drying regime and transport mechanism. The spacer-concrete interface is weak, porous and micro-cracked, and this lowers the resistance of concrete to ingress of aggressive agents. The beneficial effects of SCMs (strength enhancement and densification) and prolonged curing (120-day) are insufficient to overcome the negative effects of spacers. Implications for durability are discussed.
36 MATERIALS SCIENCE↗
Spin Rectification and Electrically Controlled Spin Transport in Molecular-Ferroelectrics-Based Spin Valves
We report a spin-rectification effect in a spin-valve structure consisting of ferroelectric croconic acid (C 5 H 2 O 5 ) sandwiched between ferromagnetic electrodes La 0.7 Sr 0.3 MnO 3 and Co, which can be switched between a high-resistance (off ) and a low-resistance (on) state by a poling voltage. In the off state, the magnetoresistance (MR) sign reverses with the measurement voltage with a 0.1-V offset, suggesting a spin-rectification behavior, while in the on state the MR remains negative. These observations can be understood in terms of electrically controlled interfacial energy-band alignment either from the electrostatic effect or from the interfacial redox process. In conclusion, the observed spin-rectification effect suggests thepossibility of diodelike devices for spin-polarized current.
36 MATERIALS SCIENCE↗
Field orientation dependent magnetic phases in the Weyl semimetal Co 3 Sn 2 S 2
Magnetism plays a key role in the emergence of topological phenomena in the Weyl semimetal Co 3 Sn 2 S 2 , which exhibits ferromagnetic interactions along the c-axis of the crystal and antiferromagnetic (AFM) interactions within the ab plane. Extensive studies on the temperature dependence of the magnetism with the magnetic field along the c-axis have uncovered a number of magnetic phases. Currently, the nature and origins of the reported magnetic phases are under debate. Here, in this work, we report on magnetic field orientation effects on the magnetism in Co 3 Sn 2 S 2 . The shape of the hysteresis loop of the Hall resistance at a fixed temperature is found to change from rectangular to bow tie-like as the magnetic field is tilted from the c-axis toward the ab plane, resembling that reported for magnetic fields along the c-axis as the temperature approaches the Curie temperature from below. Unlike their temperature-dependent counterparts, the newly observed bow tie-like hysteresis loops show exchange bias. Our results showcase the contribution of the in-plane AFM interactions to the magnetism in Co 3 Sn 2 S 2 and demonstrate a new way to tune its magnetic phases. They also shed light on the temperature-dependent magnetic phases occurring in the magnetic field along the c-axis of the crystal.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Dynamics of Current-Sharing Within a REBCO Tape-Stack Cable
Current redistribution in a non-insulating REBCO tape-stack cable may enable the use of such a cable in a high field dipole without provision for transposition of the constituent tapes. As current is increased in the REBCO cable a dynamic resistance arises in the superconducting layer near operation at critical current. The critical current of each tape in the stack is determined by the local magnetic field variation within the cable. The superconducting-normal transition in REBCO occurs over a working range of current and, within that range, the longitudinal Ohmic electric field produces a transverse electric field between adjacent tapes with different critical currents. Circuit models indicate that, as a given tape approaches critical operation, current will naturally redistribute to neighboring tapes with higher current carrying capacity due to the dynamic rise in resistivity thus preventing premature quench. Here, a multi-scale model is being developed to study the dynamics of current-sharing, the limits of stability, and the impact of fluctuations in critical-current density along each tape.
43 PARTICLE ACCELERATORS↗
An assessment of controlled source EM for monitoring subsurface CO 2 injection at the wyoming carbonSAFE geologic carbon storage site
Here we evaluate if electromagnetic (EM) geophysical methods for monitoring geologic carbon storage (GCS) efforts at the Wyoming CarbonSAFE project adjacent to the Dry Fork Station power plant near Gillette, Wyoming. This first involved acquiring both electric and magnetic fields at eleven different locations ranging in distance from immediately adjacent to 4 km from the plant. Passive EM measurements were made to provide spectral EM noise measurements generated by electricity production at the plant and to determine if useful magnetotelluric (MT) data can be successfully collected in the region. The processed data indicate that useful MT data can be collected as long as the site is located more than 2km away from the power plant as well as active roads and rail lines. Controlled source EM data were collected using three different source configurations, two of which connected to steel casings used to complete the injection wells. Comparing the EM noise measurements to the CSEM data show measurable electric and magnetic field signals at all sites. Next a series of three-dimensional (3D) numerical models were built that simulate resistivity changes caused by the proposed CO2 injection at depths ranging from 2.4 to 3.0km. These models were used to simulate various EM measurement configurations. The modeling shows that casing-source CSEM monitoring can provide sensitivity to the injected CO 2 if source electrodes are connected to the bottom of one or both of the injection wells.
58 GEOSCIENCES↗