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Functions of circuit breakers, meters, and switches combined. Circuit that includes power field-effect transistors (PFET's) provides on/off switching, soft starting, current monitoring, current tripping, and protection against overcurrent for 30-Vdc power supply at normal load currents up to 2 A. Has no moving parts.
New circuit displays more information to user and provides higher data-collection rates. Interface circuit facilitates coupling of laser-Doppler-velocimeter outputs to computer for analysis. Enables user to select variety of intermediate data-processing options, including clock frequency, coincidence channel combinations, coincidence times, dead times, digital or analog output, and channels to be analyzed.
A simple circuit is applied to the energizing of auroral particles, to solar flares, and to intergalactic double radio sources. Application to the heliospheric current systems leads to the prediction of two double layers on the Sun's axis which may give radiations detectable from Earth. Double layers in space should be classified as a new type of celestial object. It is suggested that X-ray and gamma-ray bursts may be due to exploding double layers (although annihilation is an alternative energy source). The way the most used textbooks in astrophysics treat concepts like double layers, critical velocity, pinch effects and circuits was studied. It is found that students using these textbooks remain essentially ignorant of even the existence of these, although some of the phenomena were discovered 50 yr ago.
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.
Accurate fault models are required to conduct the experiments defined in validation methodologies for highly reliable fault-tolerant computers (e.g., computers with a probability of failure of 10 to the -9 for a 10-hour mission). Described is a technique by which a researcher can evaluate the capability of the pin-level stuck-at fault model to simulate true error behavior symptoms in very large scale integrated (VLSI) digital circuits. The technique is based on a statistical comparison of the error behavior resulting from faults applied at the pin-level of and internal to a VLSI circuit. As an example of an application of the technique, the error behavior of a microprocessor simulation subjected to internal stuck-at faults is compared with the error behavior which results from pin-level stuck-at faults. The error behavior is characterized by the time between errors and the duration of errors. Based on this example data, the pin-level stuck-at fault model is found to deliver less than ideal performance. However, with respect to the class of faults which cause a system crash, the pin-level, stuck-at fault model is found to provide a good modeling capability.
A power supply conditioning circuit that can reduce Periodic and Random Deviations (PARD) on the output voltages of dc power supplies to -150 dBV from dc to several KHz with no measurable periodic deviations is described. The PARD for a typical commercial low noise power supply is -74 dBV for frequencies above 20 Hz and is often much worse at frequencies below 20 Hz. The power supply conditioning circuit described here relies on the large differences in the dynamic impedances of a constant current diode and a zener diode to establish a dc voltage with low PARD. Power supplies with low PARD are especially important in circuitry involving ultrastable frequencies for the Deep Space Network.
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.
A simple circuit is applied to the energizing of auroral particles, to solar flares, and to intergalactic double radio sources. Application to the heliospheric current systems leads to the prediction of two double layers on the Sun's axis which may give radiations detectable from earth. Double layers in space should be classified as a new type of celestial object. It is suggested that X-ray and gamma-ray bursts may be due to exploding double layers (although annihilation is an alternative energy source). The way the most used textbooks in astrophysics treat concepts like double layers, critical velocity, pinch effects and circuits was studied. It is found that students using these textbooks remain essentially ignorant of even the existence of these, although some of the phenomena were discovered 50 yr ago.
Two methods, one based on a chi-square test and the second on an F-ratio test, of testing for the plate motion circuit closures are described and evaluated. The chi-square test is used to evaluate goodness of fit, and it is assumed that the assigned errors are accurate estimates of the true errors in the data. The F-ratio test is used to compare variances of distributions, and it is assumed that the relative values of assigned error are accurate. The two methods are applied to the data of Minster and Jordan (1978) on the motion of the three plates that meet at the Galapagos Triple Junction, and the motion of the three plates that meet at the Indian Ocean Triple Junction. It is noted that the F-ratio plate circuit closure test is more useful than the chi-square test for identifying systematic misfits in data because the chi-square test overestimates the errors of plate motion data.
Power efficiency high, current regulated, and starting automatic. New circuit for starting arc jets and controlling them in steady operation capable of high power efficiency and constructed in lightweight form. Feedback control system keeps arc-jet current nearly constant, once arc struck by starting pulse. Circuit made of commercially available components. Design capable of high power efficiency.
A conditioning circuit is provided with a constant current diode in series with a zener diode, the former having a high dynamic impedance and the latter a low dynamic impedance. The constant current diode can receive an input voltage with PARD. In conjunction with the zener diode fixed to a ground, a voltage divider is provided which can give an output voltage whose PARD was significantly reduced. The conditioning circuit is effective down to dc.
Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.
The 40- by 80-foot wind tunnel circuit of the National Full-Scale Aerodynamic Complex (NFAC) has recently undergone major modifications and subsequently completed final acceptance testing. The initial testing and calibration of the wind tunnel are described and in many cases these results are compared with predictions derived from model tests and theoretical analyses. The wind tunnel meets or exceeds essentially all performance objectives. The facility runs smoothly and routinely at its maximum test-section velocity of 300 knots (Mach number = 0.45). An effective cooling air exchange system enables the wind tunnel to operate indefinitely at this maximum power condition. Throughout the operating envelope of the wind tunnel the test-section dynamic pressure is uniform to within + or - 0.5 deg, and the axial component of turbulence is generally less than 0.5 percent. Acoustic measurements indicate that, due to the low noise fans and acoustic treatment in the wind-tunnel circuit and test section, the background noise level in the test section is comparable to other large-scale acoustic wind tunnels in the United States and abroad.
Test structure forms chain of "cross" contacts fabricated together with large-scale integrated circuits. If necessary, number of such chains incorporated at suitable locations in integrated-circuit wafer for determination of fabrication yield of contacts. In new structure, resistances of individual contacts determined: In addition to making it possible to identify local defects, enables generation of statistical distributions of contact resistances for prediction of "parametric" contact yield of fabrication process.
Cross-bridge resistors added to comb and serpentine patterns. Improved combination of test structures built into integrated circuit used to evaluate design rules, fabrication processes, and quality of interconnections. Consist of meshing serpentines and combs, and cross bridge. Structures used to make electrical measurements revealing defects in design or fabrication. Combination of test structures includes three comb arrays, two serpentine arrays, and cross bridge. Made of aluminum or polycrystalline silicon, depending on material in integrated-circuit layers evaluated. Aluminum combs and serpentine arrays deposited over steps made by polycrystalline silicon and diffusion layers, while polycrystalline silicon versions of these structures used to cross over steps made by thick oxide layer.
Report summarizes investigation of single-event upsets (SEU) in bipolar integrated-circuit set of flip-flops (memory cells). Device tested made by advanced digital bipolar silicon process of Honeywell, Inc. Circuit chip contained 4 cells. Construction enabled study of effect of size on SEU behavior. Each cell externally biased so effect of bias current on SEU behavior. Results of study provides important information for optimal design of devices fabricated using buried-layer bipolar process operating in heavy-ion SEU environments. Designers use information to provide required levels of suppression of SEU in specific applications via combinations of size and/or cell-current scaling.
Plate motion data along the Southeast, Southwest, and Central Indian ridges have been reduced to 67 spreading rates, 38 transform fault azimuths, and 135 earthquake slip vectors in order to study the current motion between the Australian, Antarctic, and African plates and to investigate whether this plate circuit obeys closure. Magnetic profiles are modeled to determine rates consistently over a 3-m.y. time-averaging interval, and the new rates are shown to differ from published rates by as much as 5 mm/yr. The results indicate that Indian Ocean plate circuit nonclosure and the deformation that it suggests are much smaller than previously supposed, and support a model in which the significant deformation occurs in a diffuse plate boundary along the equatorial Indian Ocean between the Central Indian Ridge and the Sumatra Trench.
GaAs circuits for use in a fully monolithic 1 Gb/s optical controller have been developed and tested. The circuits include photodetectors, transimpedance amplifiers and 1:16 demultiplexers that can directly control the phase of MMIC phase shifters. The entire chip contains approximately 300 self-aligned gate E/D-mode MESFETs. The MESFETs have one micron-wide gate and the E-mode FETs typically have transconductance of 200 ms/mm. Results of simulations and tests are reported. Also, the design and layout of the fully monolithic chip is discussed.