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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Thin-film sensors for reusable space propulsion systems

Thin-film thermocouples (TFTCs) were developed for aircraft gas turbine engines and are in use for temperature measurement on turbine blades up to 1800 F. Established aircraft engine gas turbine technology is currently being adapted to turbine engine blade materials and the environment encountered in the Space Shuttle Main Engine (SSME)-severe thermal shock from cryogenic fuel to combustion temperatures. Initial results with coupons of MAR M-246 (+Hf) and PWA 1480 were followed by fabrication of TFTC on SSME turbine blades. Current efforts are focused on preparation for testing in the Turbine Blade Tester at NASA Marshall Space Flight Center.

Hepp, Aloysius F.↗
NASA NTRS2003

Structure of Thin-Film Lithium Microbatteries

A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiC(0)O2, on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof. The batteries produced by the above process are disclosed.

Jay F Whitacre↗
NASA NTRS2004

Method for Manufacturing Thin-film Lithium Microbatteries

A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiCoO2 on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof.

Jay F Whitacre↗
NASA NTRS2014

Properties of Superconducting Mo, Mo2n and Trilayer Mo2n-Mo-Mo2n Thin Films

We present measurements of the properties of thin film superconducting Mo, Mo2N and Mo2N/Mo/Mo2N trilayers of interest for microwave kinetic inductance detector (MKID) applications. Using microwave resonator devices, we investigate the transition temperature, energy gaps, kinetic inductance, and internal quality factors of these materials. We present an Usadel-based interpretation of the trilayer transition temperature as a function of trilayer thicknesses, and a 2-gap interpretation to understand the change in kinetic inductance and internal resonance quality factor (Q) as a function of temperature.

Superconducting↗
NASA NTRS1994

Amorphous silicon thin films: The ultimate lightweight space solar cell

Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

Vendura, G. J., Jr.↗
DOE OSTI2022

Structural and Optical Properties of High Entropy (La,Lu,Y,Gd,Ce)AlO 3 Perovskite Thin Films

Mixtures of Ce-doped rare-earth aluminum perovskites are drawing a significant amount of attention as potential scintillating devices. However, the synthesis of complex perovskite systems leads to many challenges. Designing the A-site cations with an equiatomic ratio allows for the stabilization of a single-crystal phase driven by an entropic regime. This work describes the synthesis of a highly epitaxial thin film of configurationally disordered rare-earth aluminum perovskite oxide (La 0.2 Lu 0.2 Y 0.2 Gd 0.2 Ce 0.2 )AlO 3 and characterizes the structural and optical properties. The thin films exhibit three equivalent epitaxial domains having an orthorhombic structure resulting from monoclinic distortion of the perovskite cubic cell. An excitation of 286.5 nm from Gd 3+ and energy transfer to Ce 3+ with 405 nm emission are observed, which represents the potential for high-energy conversion. These experimental results also offer the pathway to tunable optical properties of high-entropy rare-earth epitaxial perovskite films for a range of applications.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Multilayer thin film design as far ultraviolet quarterwave retarders

At short wavelengths, such as FUV, transparent, optically active materials are scarce. Reflection phase retardation by a multilayer thin film can be a good alternative in this wavelength region. We design a multilayer quarterwave retarder by calculating the electric fields at each boundary in the multilayer thin film. Using this method, we achieve designs of FUV multilayers which provide high, matched reflectances for both s- and p-polarization states, and at the same time a phase difference between these two states of nearly 90 deg. For example, a quarterwave retarder designed at the Lyman-alpha line (121.6 nm) has 81.05 percent reflectance for the s-polarization and 81.04 percent for the p-polarization state. The phase difference between these two polarization states is 90.07 deg. For convenience the retarders are designed for 45 deg angle of incidence, but our design approach can be used for any other angle of incidence. Aluminum and MgF2 are used as film materials and an opaque thick film of aluminum as the substrate.

Kim, Jongmin↗
DOE OSTI2024

Energy Level Gradients from Surface to Bulk in Hybrid Metal-Halide Perovskite Thin Films

Variations in local strain, defect densities, and composition of hybrid metal-halide perovskites have been reported to create heterogeneous energy landscapes in thin films, which impact charge-carrier diffusion and recombination dynamics. Here, we employ one- and two-photon transient absorption spectroscopy to selectively probe the dynamics of charge carriers from surface and bulk regions of methylammonium lead bromide thin films. Differences in the transient absorption spectra indicate that an energy gradient of approximately 100 meV is formed between the higher band-gap surface and lower band-gap bulk regions. Thus, during their lifetime, photoexcited carriers move away from the surface to recombine in the bulk, where our experiments detect long-lived charge populations despite the significant band splitting that has conventionally been assumed to inhibit efficient radiative recombination. Supported by first-principles calculations, we demonstrate that bright emission can still arise from the bulk with states that occupy a wide range of momenta in the vicinity of the band extrema, which show strong dipole transitions. Our results report that photoexcitations in the hybrid perovskites avoid defect-rich surface regions, and that particularly strong emission is generated from accumulated excitation populations in the bulk. Published by the American Physical Society 2024

Bourelle, Sean A.↗
DOE OSTI2022

Superconducting phase of Ti x O y thin films grown by molecular beam epitaxy

Here we investigate the complex relationship between the growth conditions and the structural and transport properties of Ti x O y thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure P Ox for films grown on (0001)-Al 2 O 3 substrates at 850° C. A cubic c-TiO 1±δ buffer layer is formed for low O/Ti ratios, while a corundum cr-Ti 2 O 3 layer is formed under higher-oxidizing conditions. Metallicity is observed for c-TiO 1-δ buffer layers. The superconducting γ -Ti 3 O 5 Magnéli phase is found to nucleate on a c-TiO 1-δ buffer for intermediate POx conditions, and an insulator-superconducting transition is observed at 4.5 K (T$^{onset}_{C}$ = 6K) for 85 nm thick films. Strain relaxation of γ -Ti 3 O 5 occurs with increasing film thickness and correlates with a thickness-dependent increase in T C observed for Ti x O y thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2010

Electrical Switching of Perovskite Thin-Film Resistors

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Liu, Shangqing↗
DOE OSTI2020

Microstructural Evolution and ORR Activity of Nanocolumnar Platinum Thin Films with Different Mass Loadings Grown by High Pressure Sputtering

Nanocolumnar platinum thin films (Pt-TFs) with different Pt mass loadings were grown by high pressure sputtering (HIPS) and investigated as oxygen reduction reaction (ORR) electrocatalysts for polymer electrolyte membrane fuel cell applications. Mass loading was controlled by changing the sputter deposition time. A cauliflower-like columnar microstructure was achieved by depositing the Pt-TFs onto a microporous layer (MPL)-like surface composed of carbon particles in order to mimic catalyst-coated gas diffusion electrodes. Microstructural evolution of HIPS Pt-TFs and their ORR activity were investigated. Electrochemical characterization of the nanocolumnar Pt-TFs was performed by cyclic voltammetry and rotating disk electrode measurements on Pt-TF/MPL-like-layer/glassy-carbon samples in an aqueous perchloric acid electrolyte. The electrochemically active surface area increased from 18 to 39 m 2 g –1 as the Pt mass loading was decreased. Specific activity of the films was similar (~600 μA cm –2 ) for all Pt mass loadings, due to the similar nanoparticle sizes of ~5 nm as observed by transmission electron microscopy and X-ray diffraction. Furthermore, mass activity of the films increased from 0.11 to 0.26 A mg –1 as the Pt mass loading was decreased, which is an indication of the effective Pt utilization and better access through the catalyst layer at lower Pt mass loadings.

08 HYDROGEN↗
DOE OSTI2022

Visualizing the unusual spectral weight transfer in DyBa2Cu3O7–δ thin film

Abstract We report a Spectroscopic Imaging Scanning Tunneling Microscopy (SI-STM) study of a DyBa 2 Cu 3 O 7-δ (DBCO) thin film ( T c ~ 79 K) synthesized by the molecular beam epitaxy (MBE). We observed an unusual transfer of spectral weight in the local density of states (LDOS) spectra occurring only within the superconducting gap. By a systematic control of the tip-sample distance and the junction resistance, we demonstrate that the spectral weight transfer can be switched at a nano-meter length scale. These results suggest that an interaction between the STM tip and the sample alters the electronic configurations in the film. This probably originates from a combination of an intrinsic band bending at the interface between the surface and the bulk, and a tip-induced band bending. These results may open a new avenue for band engineering and applications of thin films of high- T c cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1988

RF surface resistance of YBa2Cu3O(7-x) thin films

The excitement engendered by the discovery of the new T sub c oxide superconductors has led to much speculation about practical applications of thin films of these materials in digital and analog electronic devices. Most of these envisioned applications involve high frequency signals for which a detailed knowledge of the surface impedance of the novel superconductors is very important. We have measured the surface resistance of thin films of YBaCuO in the frequency range 0.5 less than f less than 17 GHz using a stripline-resonator method. The stripline procedure also was used to measure the surface resistance of high quality gold and aluminum films; the resistance values obtained agree with values predicted from the measured dc resistance using the Pippard formalism for the anomalous skin effect. The YBaCuO were produced by a multilayer deposition process. The films are formed by e-beam evaporation of 24 layers of Y, Ba, and Cu. Films with the highest transition temperature were obtained using yttria-stabilized zirconia (YSZ) substrates. After deposition, the films are transferred to a furnace where they are annealed in flowing O2 at 850 C for 2h. The furnace then is turned off and allowed to cool to 100 C in about 16 h. Auger profiling of the films made by this process shows that the concentrations of Y, Ba, Cu, and O are uniform to within 1 percent throughout the thickness of the film.

Source record↗
DOE OSTI2020

Chapter 8: Time-Resolved Photoluminescence Characterization of Polycrystalline Thin-Film Solar Cells

This chapter describes some photoluminescence (PL) approaches to characterize thin film solar cells with emphasis on time-resolved methods. Spectral PL analysis is complementary and was recently reviewed. Since TRPL is not very commonly used in PV characterization, we consider interface and bulk recombination in the test structures and in devices, briefly describe charge-carrier transport and recombination microscopy, and finally, summarize and compare some CdTe, CdSeTe, CIGS, kesterite, and perovskite EO characteristics.

bulk recombination↗
DOE OSTI2025

A15 phase Ta 3⁢ Sb thin films: Direct synthesis, charge transport, and spin-orbit torque

Ta 3 ⁢Sb is one of the A15 compounds that have been predicted to have giant spin Hall conductivities due to the gapped Dirac-like band crossings in their electronic structures. We use co-sputtering to directly synthesize thin films of Ta 3 ⁢Sb and identify a large window of Ta:Sb flux ratio that permits the formation of single-phase A15 structure. These sputtered films have an actual Ta:Sb atomic ratio of 4:1, as determined from Rutherford backscattering spectrometry. Their high resistivity, at the Mott-Ioffe-Regel limit, suggests that the electron mean free path is comparable to interatomic distances. From harmonic Hall and spin-torque ferromagnetic resonance measurements, the intrinsic spin Hall conductivity of thin film Ta 3 ⁢Sb is estimated to be in the range of −526 to −1230⁢(ℏ/𝑒)S/cm at 300 K, lower in magnitude than the predicted value of −1400⁢(ℏ/𝑒)S/cm . Here, first-principles calculations of the electronic structure show that the discrepancy is consistent with an increase of the Fermi level due to the nonideal stoichiometry needed to stabilize the A15 structure.

Density functional theory↗