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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Automated parking garage system model

A one-twenty-fifth scale model of the key components of an automated parking garage system is described. The design of the model required transferring a vehicle from an entry level, vertically (+Z, -Z), to a storage location at any one of four storage positions (+X, -X, +Y, +Y, -Y) on the storage levels. There are three primary subsystems: (1) a screw jack to provide the vertical motion of the elevator, (2) a cam-driven track-switching device to provide X to Y motion, and (3) a transfer cart to provide horizontal travel and a small amount to vertical motion for transfer to the storage location. Motive power is provided by dc permanent magnet gear motors, one each for the elevator and track switching device and two for the transfer cart drive system (one driving the cart horizontally and the other providing the vertical transfer). The control system, through the use of a microprocessor, provides complete automation through a feedback system which utilizes sensing devices.

Collins, E. R., Jr.↗
NASA NTRS2005

Prototype development of a Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR)

Weather prediction and hurricane tracking would greatly benefit of a continuous imaging capability of a hemisphere at millimeter wave frequencies. We are developing a synthetic thinned aperture radiometer (STAR) prototype operating from 50 to 56 GHz as a ground-based testbed to demonstrate the technologies needed to do full earth disk atmospheric temperature soundings from Geostationary orbit with very high spatial resolution. The prototype consists of a Y-array of 24 MMIC receivers that are compact units implemented with low noise InP MMIC LNAs, second harmonic I-Q mixers, low power IF amplifiers and include internal digital bias control with serial line communication to enable low cost testing and system integration. Furthermore, this prototype STAR includes independent LO and noise calibration signal phase switching circuitry for each arm of the Y-array to verify the operation and calibration of the system.

Millimeter wave low noise amplifiers↗
NASA NTRS1988

A self-injection locked, Q-switched, line-narrowed Ti:Al2O3 laser

Line-narrowing, Q-switched, and self-injection locking are studied independently and as a system. Line narrowing is shown both theoretically and experimentally to depend on the inverse square root of the pulse evolution time interval. Q switching of the Ti:Al2O3 laser is demonstrated and the laser output energy as a function of the Q-switch delay is investigated. Self-injection is demonstrated and the operation of the laser is explored as a function of loss and the Q-switch delay. Self-injection locking is demonstrated and the performance as a function of the Q-switch delay is determined.

Barnes, Norman P.↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
DOE OSTI2020

High Performance Computing Systems Tools, Visualization, and Management

High Performance Computing (HPC) systems are complex setups of servers, storage devices, network switches, and cables that are specifically designed to accommodate hundreds of users running highly computationally intensive applications at a time. These applications require numerous softwares, licenses, and various levels of storage as well. All of these resources must be monitored and managed by HPC administrators, which presents a daunting task. In this project, I created numerous software tools as part of an HPC Visualization and Management system, which is now used by HPC administrators on a daily basis.

97 MATHEMATICS AND COMPUTING↗
NASA NTRSDate not supplied

Learning From Failure: Boosting Cycling Endurance of Optical Phase Change Materials

Chalcogenide phase change materials (PCMs) are a unique class of compounds whose switchable optical and electronic properties have fueled an explosion of emerging applications in microelectronics and microphotonics. Key to any application is the ability of PCMs to reliably switch between crystalline and amorphous states over a large number of cycles. While this issue has been extensively studied in the case of microelectronic memories, current PCM-based optical devices suffer from much inferior endurance. To understand the failure mechanisms limiting endurance of PCMs specifically in microphotonic devices, we have developed an on-chip resistive micro-heater platform and an automatic multi-modal characterization system to analyze cycling performance of optical PCMs. Reversible switching of large-area PCM devices over 50,000 cycles was demonstrated.

Optical phase change material↗
DOE OSTI2021

Switching of a Magnet by Spin-Orbit Torque from a Topological Dirac Semimetal

Recent experiments show that topological surface states (TSS) in topological insulators (TI) can be exploited to manipulate magnetic ordering in ferromagnets. In principle, TSS should also exist for other topological materials, but it remains unexplored as to whether such states can also be utilized to manipulate ferromagnets. In this paper, current-induced magnetization switching enabled by TSS in a non-TI topological material, namely, a topological Dirac semimetal α-Sn, is reported. The experiments use an α-Sn/Ag/CoFeB trilayer structure. The magnetization in the CoFeB layer can be switched by a charge current at room temperature, without an external magnetic field. The data show that the switching is driven by the TSS of the α-Sn layer, rather than spin-orbit coupling in the bulk of the α-Sn layer or current-produced heating. The switching efficiency is as high as in TI systems. This shows that the topological Dirac semimetal α-Sn is as promising as TI materials in terms of spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dry cooling retrofits at existing fossil fuel-fired power plants in a water-stressed region: Tradeoffs in water savings, cost, and capacity shortfalls

This study (completed by US Department of Energy, National Energy Technology Laboratory) investigates the performance, cost, and generating capacity impacts of switching from wet cooling towers to dry cooling systems to reduce consumptive water use at existing fossil fuel-fired power plants in a water-stressed region. Here, retrofit analysis of dry cooling is conducted on a unit-by-unit basis for both coal-fired and gas-fired power plants in several western U.S. states. Based on regional averages, retrofitting dry cooling systems in lieu of wet cooling towers decreases total annual plant water consumption at existing coal- and gas-fired power plants by 93% and 100%, respectively, while increasing the levelized cost of electricity generation by approximately 12% and 18%, respectively. Over the year, the change in monthly net regional generating capacity from dry cooling retrofits exhibits a seasonal pattern, with the largest shortfalls occurring in July. Dry cooling retrofits thus lead to tradeoffs in water savings, cost, and capacity shortfalls, which vary with power plant characteristics. The tradeoffs identified here can inform electric power industry water management plans and decision-making for alternative cooling options in water-stressed regions.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Structure and Magnetic Properties of Pseudo-1D Chromium Thiolate Coordination Polymers

The synthesis, structure, and magnetic properties of two novel, pseudo-one-dimensional (1D) chromium thiolate coordination polymers (CPs), CrBTT and Cr2BDT3, are reported. The structures of these materials were determined using X-ray powder diffraction revealing highly symmetric 1D chains embedded within a CP framework. The magnetic coupling of this chain system was measured by SQUID magnetometry, revealing a switch from antiferromagnetic to ferromagnetic behavior dictated by the angular geometrical constraints within the CP scaffold consistent with the Goodenough–Kanamori–Anderson rules. Intrachain magnetic coupling constants J NN of –32.0 and +5.7 K were found for CrBTT and Cr 2 BDT 3 , respectively, using the 1D Bonner–Fisher model of magnetism. The band structure of these materials has also been examined by optical spectroscopy and density functional theory calculations revealing semiconducting behavior. Furthermore, our findings here demonstrate how CP scaffolds can support idealized low-dimensional structural motifs and dictate magnetic interactions through tuning of geometry and inter-spin couplings.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Visualization and quantum control of light-accelerated condensates by terahertz multi-dimensional coherent spectroscopy

Abstract Characterizing and controlling high-order correlation of quantum systems is key for developing quantum devices and switching technologies. Although conventional static and ultrafast spectroscopy gives access to collective excitations characterizing quantum states, more exotic correlations cannot be easily separated from other contributions. Here we develop density matrix simulations to show that seventh-order-wave-mixing peaks with distinct temperature and field dependences in two-dimensional terahertz nonlinear spectra reveal light-induced correlations in non-equilibrium superconducting states. Above critical terahertz driving, these emerging peaks split from conventional peaks along the second axis introduced by pump-probe relative phase in two-dimensional frequency space. They are photo-generated by correlations between two-photon fluctuations and interacting quasi-particle and quasi-particle/Higgs superconductor excitations. By photo-inducing persistent symmetry breaking via light-wave propagation, we also demonstrate seventh-order-wave-mixing sensing of Higgs collective modes. Our theory suggests to use multi-dimensional spectroscopy for quantum sensing of light-driven superconductivity and paves a path for quantum operations by few-cycle-THz-periodic photocurrent modulation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

A Prototype High-Voltage Pulsed Power Supply for Control of the ITER Shattered Pellet Injection System Flyer Plate Valve

A high-voltage pulsed power supply (HVPPS) has been designed, prototyped, and tested for driving an eddy current actuated propellant valve for the International Thermonuclear Experimental Reactor (ITER) disruption mitigation system. The high-voltage (HV) dc supply output voltage is software programmable, and the energy storage capacitor bank can be readily reconfigured as 200, 400, 600, and 800 μ F, enabling testing and optimization of both the valve drive and valve systems. Multiple system parameters are monitored before, during, and after each firing of the valve. The system parameters are both displayed and stored for further analysis. Control of the setup, firing sequence, and data collection is automated using a LabVIEW-based control program. The programmability and reconfigurability of this system collectively provide a flexible and robust platform for system refinement and optimization. In this article, a summary of the system will be provided including operational sequences, HV switching and associated triggering methods and circuits, and results measured while firing a solid frozen pellet. Additionally, planned refinement activities toward meeting all requirements for ITER integration will be discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Half-Metal Spin Filter for Highly Polarized Emission from GaAs Photocathodes

GaAs-based photocathodes are one of the major sources of spin-polarized electrons and are crucial for the upcoming Electron-Ion collider experiments which includes study of proton spin and spin parity violation in the standard model. The theoretical polarization limit in unstrained GaAs photocathodes is 50 % but only 35 % is routinely achieved in experiments. Spin selective filtering allows to boost the spin polarization beyond the 50 % theoretical limit. In this work, first-principle electronic calculations using standard Density Functional Theory are performed to predict possible Heusler alloy half-metal candidates to be used as spin-filter. Simulations are also performed to investigate the half-metallicity as function of the magnetic spin direction. Several devices are experimentally fabricated using dedicated Molecular Beam Epitaxy growth system. We implemented Quantum Efficiency and Polarization testing of these half-metal/GaAs heterostructures using a dedicated Mott polarimeter system. Photoemission can also be seen on magnetically switching the spin-filter direction accompanied by a change in sign of the asymmetry which is a qualitative proof of the spin-filtering effect.

Poddar, S.↗
NASA NTRS1965

Electron-beam deflection controlled by digital signals

Electron-beam deflection in electronic image converters is controlled by a tapped magnetic deflection yoke and a series of current generators. The generators supply equal current to each tap through digitally controlled switches, thereby increasing the inherent accuracy of the system.

Cressey, J. R.↗
NASA NTRS1966

Progress of analog-hybrid computation

Review of fast analog/hybrid computer systems, integrated operational amplifiers, electronic mode-control switches, digital attenuators, and packaging techniques

ELECTRONIC SWITCH↗