Substitutional Mechanism of Ni into the Wide-Band-Gap Semiconductor InTaO4 and its Implications for Water Splitting Activity in the Wolframite Structure Type
The mechanism of Ni substitution into the oxide semiconductor InTaO{sub 4} has been studied through a combination of structural and spectroscopic techniques, providing insights into its previously reported photoactivity. Magnetic susceptibility and X-ray absorption near-edge spectroscopy (XANES) measurements demonstrate that nickel is divalent within the host lattice. The combined refinement of synchrotron X-ray and neutron powder diffraction data indicates that the product of Ni doping has the stoichiometry of (In{sub 1-x}Ni{sub 2x/3}Ta{sub x/3})TaO{sub 4} with a solubility limit of x {approx} 0.18, corresponding to 12% Ni on the In site. Single-phase samples were only obtained at synthesis temperatures of 1150 C or higher due to the sluggish reaction mechanism that is hypothesized to result from small free energy differences between (In{sub 1-x}Ni{sub 2x/3}Ta{sub x/3})TaO{sub 4} compounds with different x values. Undoped InTaO{sub 4} is shown to have an indirect band gap of 3.96 eV, with direct optical transitions becoming allowed at photon energies in excess of 5.1 eV. Very small band-gap reductions (less than 0.2 eV) result from Ni doping, and the origin of the yellow color of (In{sub 1-x}Ni{sub 2x/3}Ta{sub x/3})TaO{sub 4} compounds instead results from a weak {sup 3}A{sub 2g} {yields} {sup 3}T{sub 1g} internal d {yields} d transition not associated with the conduction or valence band that is common to oxide compounds with Ni{sup 2+} in an octahedral environment.