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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Lattice distortion inducing exciton splitting and coherent quantum beating in CsPbI 3 perovskite quantum dots

It is well known that shape or crystal anisotropy in nanocrystal quantum dots, which are tiny semiconductor nanoparticles, results in energy splitting of their optically bright excitons (bound electron-hole pairs), which is known as fine structure splitting (FSS). Studying FSS usually requires single or just a few quantum dots because of its sensitivity to nanocrystal size and shape. In this work, by using ensemble-level femtosecond polarized transient absorption, the authors observed clear bright-exciton FSS in solution-processed CsPbI 3 perovskite QDs, which is manifested as exciton quantum beats (periodic oscillations of kinetic traces). Remarkably, the beat frequency of a given sample, as determined by the FSS energy, can be continuously controlled by changing the temperature. The FSS is linked experimentally for the first time to temperature dependent lattice distortion in the orthorhombic crystal structure. Because these orthorhombic-phase nanocrystal quantum dots are bounded by the pseudocubic family of crystal planes, the lattice distortion results in a misalignment between the lattice vectors and the nanocrystal edge directions which breaks the symmetry, leading to previously unrecognized avoided crossing “fine-structure gap” between bright exciton. Furthermore, this fine structure gap is responsible for the ability to observe quantum beats despite the shape inhomogeneity within the measured ensemble. Lattice-distortion dependent FSS in CsPbI 3 QDs has important consequences for their application as a platform for coherence and entanglement control in quantum information science.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Measuring sub-surface spatially varying thermal conductivity of silicon implanted with krypton

The thermal properties of semiconductors following exposure to ion irradiation are of great interest for the cooling of electronic devices; however, gradients in composition and structure due to irradiation often make the measurement difficult. Furthermore, the nature of spatial variations in thermal resistances due to spatially varying ion irradiation damage is not well understood. In this work, we develop an advancement in the analysis of time-domain thermoreflectance to account for spatially varying thermal conductivity in a material resulting from a spatial distribution of defects. We then use this method to measure the near-surface (≲1 μm) thermal conductivity of silicon wafers irradiated with Kr + ions, which has an approximate Gaussian distribution centered 260 nm into the sample. Our numerical analysis presented here allows for the spatial gradient of thermal conductivity to be extracted via what is fundamentally a volumetric measurement technique. We validate our findings via transmission electron microscopy, which is able to confirm the spatial variation of the sub-surface silicon structure, and provide additional insight into the local structure resulting from the effects of ion bombardment. Thermal measurements found the ion stopping region to have a nearly 50x reduction in thermal conductivity as compared to pristine silicon, while TEM showed the region was not fully amorphized. Our results suggest this drastic reduction in silicon thermal conductivity is primarily driven by structural defects in crystalline regions along with boundary scattering between amorphous and crystalline regions, with a negligible contribution being due to implanted krypton ions themselves.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Two good metals make a semiconductor: A potassium-nickel compound under pressure

We predict a potassium-nickel intermetallic compound K 2 Ni at high pressure and identify it as the long-sought structure of the only known K-Ni compound to date. Although both constituent elements are metallic, K 2 Ni exhibits a semiconducting ground state with an indirect band gap of 0.65 eV. Electron instability due to the degeneracy at the Fermi level arises from the particular motif of the structure, which in turn induces symmetry-breaking Peierls distortion and a nonmetallic ground state. Overall, the results indicate that the chemical properties of elements can change dramatically under extreme conditions and have significant implications for the postulation that potassium is incorporated in Earth's core.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Discovery of a layered multiferroic compound Cu 1-x Mn 1+y SiTe 3 with strong magnetoelectric coupling

Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor Cu 1-x Mn 1+y SiTe 3 (0.04 ≤ x ≤ 0.26; 0.03 ≤ y ≤ 0.15), which crystallizes in a polar monoclinic structure (Pm space group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ligated Cluster Building Blocks as Chemical Donors and Acceptors for Two-Dimensional Metal Chalcogenides and Phosphorene Nanoribbons

Final report for studies on ligated transition metal chalcogenide clusters building blocks for serving as dopants in two dimensional semiconductors. The primary result is extending the superatom concept to transition metal chalcogenide clusters including a similarity with the perioidic electronic structures that are found in the periodic table. These results have found both new magic numbers, and new magic clusters with large spin magnetic moments.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Micromachining Of Silicon

Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.

Dickman, John E.↗
NASA NTRS1991

AIAA/IKI Microgravity Science Symposium, 1st, Moscow, USSR, May 13-17, 1991, Proceedings

The state of the art of microgravity science is examined in reviews and reports. Consideration is given to fluid physics; modeling and numerical analysis; crystal growth of electronic materials, proteins, metals, alloys, glasses, and ceramics; biotechnology, combustion science, microgravity hardware, and fundamental phenomena; and education. Particular attention is given to containerless science and technology, a low-gravity two-phase flow with heat transfer, numerical investigation on Benard instability in a finite liquid layer, synthesis and crystallization of refractory compounds from solutions in metallic melts under microgravitation conditions, the long duration protein crystallization experiment aboard the Mir Space Station, directional solidification in immiscible systems, formation of periodic layer structure in oxide melts under different gravity values, opposed flow flame spread in normal, enhanced, and reduced gravity, automatic equipment for semiconductor production in space, and consort and joust sounding rocket missions.

Source record↗
NASA NTRS1997

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗
NASA NTRS2004

Modeling Growth of Nanostructures in Plasmas

As semiconductor circuits shrink to CDs below 0.1 nm, it is becoming increasingly critical to replace and/or enhance existing technology with nanoscale structures, such as nanowires for interconnects. Nanowires grown in plasmas are strongly dependent on processing conditions, such as gas composition and substrate temperature. Growth occurs at specific sites, or step-edges, with the bulk growth rate of the nanowires determined from the equation of motion of the nucleating crystalline steps. Traditional front-tracking algorithms, such as string-based or level set methods, suffer either from numerical complications in higher spatial dimensions, or from difficulties in incorporating surface-intense physical and chemical phenomena. Phase field models have the robustness of the level set method, combined with the ability to implement surface-specific chemistry that is required to model crystal growth, although they do not necessarily directly solve for the advancing front location. We have adopted a phase field approach and will present results of the adatom density and step-growth location in time as a function of processing conditions, such as temperature and plasma gas composition.

Hwang, Helen H.↗
NASA NTRS2007

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Hu, Qing↗
NASA NTRS2009

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Hu, Qing↗
NASA NTRS2013

Micro-Textured Black Silicon Wick for Silicon Heat Pipe Array

Planar, semiconductor heat arrays have been previously proposed and developed; however, this design makes use of a novel, microscale black silicon wick structure that provides increased capillary pumping pressure of the internal working fluid, resulting in increased effective thermal conductivity of the device, and also enables operation of the device in any orientation with respect to the gravity vector. In a heat pipe, the efficiency of thermal transfer from the case to the working fluid is directly proportional to the surface area of the wick in contact with the fluid. Also, the primary failure mechanism for heat pipes operating within the temperature range of interest is inadequate capillary pressure for the return of fluid from the condenser to the wick. This is also what makes the operation of heat pipes orientation-sensitive. Thus, the two primary requirements for a good wick design are a large surface area and high capillary pressure. Surface area can be maximized through nanomachined surface roughening. Capillary pressure is largely driven by the working fluid and wick structure. The proposed nanostructure wick has characteristic dimensions on the order of tens of microns, which promotes menisci of very small radii. This results in the possibility of enormous pumping potential due to the inverse proportionality with radius. Wetting, which also enhances capillary pumping, can be maximized through growth of an oxide layer or material deposition (e.g. TiO2) to create a superhydrophilic surface.

Yee, Karl Y.↗
DOE OSTI2024

30 years of semiconductor nanowire research: A Personal Journey

This project is about flux line pinning in high T c superconductors using columnar defects as the pinning centers. The basic idea is that linear structural defects can pin the flux lines within HTSCs so that their critical current density (the maximal current density that these HTSCs can carry with zero resistance) can be enhanced. The question is how to create such linear structural defects within crystalline cuprate thin films. Scientists have already successfully demonstrated the concept by irradiating HTSC crystals with high-energy ions at synchrotron beamline facilities. However, such heavy ion irradiation is practically not viable for large-scale processes. Finally, we reasoned that maybe we could introduce some sort of linear nanoscopic objects into HTSC to form a composite, and then these linear nanoscopic objects would serve as the magnetic flux line pinning centers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

One-Particle and Excitonic Band Structure in Cubic Boron Arsenide

Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Here, in this paper, predictions from an advanced self-consistent many-body perturbative theory are reported and it is shown that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses. With respect to two-particle properties, significant differences with Si appear. The excitonic spectrum for both q = 0 and finite q is reported, and it is shown that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about ≈1.5 eV, which may play a crucial role in application of BAs in optoelectronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Down-selection of biomolecules to assemble “reverse micelle” with perovskites

Abstract Biological molecule-semiconductor interfacing has triggered numerous opportunities in applied physics such as bio-assisted data storage and computation, brain-computer interface, and advanced distributed bio-sensing. The introduction of electronics into biological embodiment is being quickly developed as it has great potential in providing adaptivity and improving functionality. Reciprocally, introducing biomaterials into semiconductors to manifest bio-mimetic functionality is impactful in triggering new enhanced mechanisms. In this study, we utilize the vulnerable perovskite semiconductors as a platform to understand if certain types of biomolecules can regulate the lattice and endow a unique mechanism for stabilizing the metastable perovskite lattice. Three tiers of biomolecules have been systematically tested and the results reveal a fundamental mechanism for the formation of a “reverse-micelle” structure. Systematic exploration of a large set of biomolecules led to the discovery of guiding principle for down-selection of biomolecules which extends the classic emulsion theory to this hybrid systems. Results demonstrate that by introducing biomaterials into semiconductors, natural phenomena typically observed in biological systems can also be incorporated into semiconducting crystals, providing a new perspective to engineer existing synthetic materials.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1987

On the control of flexible structures by applied thermal gradients

Thermal, elastic, and feedback analyses are applied to the case of a beam with a distributed thermal actuator. The actuator is capable of producing a thermal gradient across the section of the beam. One candidate for such an actuator uses the Peltier effect, which appears in certain semiconductors. These devices act as heat pumps when a voltage is applied, causing a temperature gradient. It is shown that the thermal gradients can induce deflection in the beam. If the thermal gradients are applied in the proper sense to a vibrating beam, it is possible to increase the vibration damping exhibited by the structure. Experimental results are given for a cantilever beam, whose first vibrational mode damping ratio was increased from 0.81 to 7.4 percent with a simple lead compensation.

Edberg, D. L.↗
NASA NTRS1987

Control of flexible structures by applied thermal gradients

Thermal, elastic, and feedback analyses are applied to the case of a beam with a distributed thermal actuator. The actuator is capable of producing a thermal gradient across the section of the beam. One candidate for such an actuator uses the Peltier effect, which appears in certain semiconductors. These devices act as heat pumps when a voltage is applied, causing a temperature gradient. It is shown that the thermal gradients can induce deflection in the beam. If the thermal gradients are applied in the proper sense to a vibrating beam, it is possible to increase the vibration damping exhibited by the structure. Experimental results are given for a cantilever beam, whose first vibrational mode damping ratio was increased from 0.81 to 7.4 percent with simple lead compensation.

Edberg, Donald L.↗