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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51

A Piezoelectric Cryogenic Heat Switch

We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios greater than 100 were achieved when the positioner applied its maximum force of 8 N. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an optimized PZHS.

Low temperature physics↗

Switch Using Radio Frequency Identification

Disclosed is an apparatus for use as a switch. In one embodiment, the switch comprises at least one RFID tag, each RFID tag comprising an antenna element and an RFID integrated circuit, at least one source element, and at least one lever arm. Each lever arm is connected to one of the RFID tags, and each lever arm is capable of two positions. One of the positions places the lever arm and the RFID tag connected thereto into alignment with the source element. Other embodiments are also described.

Fink, Patrick W.↗

Visual Attention Allocation Between Robotic Arm and Environmental Process Control: Validating the STOM Task Switching Model

Fifty six participants time shared a spacecraft environmental control system task with a realistic space robotic arm control task in either a manual or highly automated version. The former could suffer minor failures, whose diagnosis and repair were supported by a decision aid. At the end of the experiment this decision aid unexpectedly failed. We measured visual attention allocation and switching between the two tasks, in each of the eight conditions formed by manual-automated arm X expected-unexpected failure X monitoring- failure management. We also used our multi-attribute task switching model, based on task attributes of priority interest, difficulty and salience that were self-rated by participants, to predict allocation. An un-weighted model based on attributes of difficulty, interest and salience accounted for 96 percent of the task allocation variance across the 8 different conditions. Task difficulty served as an attractor, with more difficult tasks increasing the tendency to stay on task.

STOM attention allocation model validation↗

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

Ikpe, Stanley A.↗

Coupling Inductor Based Hybrid Millimeter-Wave Switch

A switch comprising a plurality of inductors and a plurality of shunt transistors is described. Each inductor can be electrically coupled between adjacent shunt transistors to form a distributed switch structure. At least two inductors in the plurality of inductors can be inductively coupled with each other. The plurality of inductors can correspond to portions of a coupling inductor, wherein the coupling inductor can have an irregular octagonal shape.

Shu, Ran↗

Extended Stroke and Miniaturized Reverse-Operation DTE Thermal Switches

This paper describes two advanced thermal switches under development that are offshoots of the recently flight-qualified 2500:1 reverse-operation differential thermal expansion (DTE) thermal switch (ROD-TSW). The first is the extended stroke ROD-TSW (ES-ROD-TSW) while the second is the miniaturized ROD-TSW (mini-ROD-TSW). Each employs multiple diametrically nested DTE stages in contrast to the single-stage ROD-TSW. The ES-ROD-TSW employs two stages and a negative CTE material known as Allvar and its main purpose is to extend its stroke for use in non-vacuum planetary environments. The mini-ROD-TSW employs four stages to miniaturize its size for use in compact lunar instruments and rovers. The ES-ROD-TSW was TVAC tested at JPL and its ON/OFF ratio is 13000:1 based on a measured ON conductance of 6.89 W/K and a calculated OFF conductance of 0.00053 W/K. The mini-ROD-TSW is targeted to have an ON conductance of 1.5 W/K and an OFF conductance of 0.0015 W/K, both verified by analysis. Test verification of the mini-ROD-TSW remains to be carried out. The paper will provide design/performance details of each device.

Farmer, Jeffery T.↗

Thermal Vacuum and Vibration Testing of the Differential Thermal Expansion Thermal Switch

The Extended Stroke, Reverse Operation, Differential Expansion Thermal Switch for Extreme Variable Environments uses materials with both positive and negative coefficients of thermal expansion (CTE) arranged in concentric cylinders so that the thermal switch (TS) operates passively, opening a gap between interfaces to create a low thermal contact when cold, and closing the gap between interfaces to create a high thermal contact when hot. This paper details the testing of the TS at Marshall Space Flight Center including the pre-vibe thermal vacuum cycle test, vibration test, post-vibe thermal vacuum cycle test, and long duration thermal vacuum cycle test. The pre- and post-vibe thermal cycle and the long duration cycle test tested to hot and cold plateau initial temperatures of 40 °C, and -173 °C, respectively. The pre- and post-vibe tests required plateau holds of at least 2 hours, whereas the long duration cycle test required plateau holds of at least 20 hours. The tests each used a rate of temperature change of < 2 °C/min when transitioning between plateaus. The data collected from each thermal test is compared to show the operation of the TS both before and after the vibration test to GEVS levels, and throughout the long duration cycle test. From the data collected, the total conductance through the TS interfaces is calculated for both on (TS closed – during hot plateau) and off (TS open – during cold plateau) configurations, and the turndown ratio is also calculated. Challenges and lessons learned from the testing are also discussed.

thermal control technology↗

Magnetoelectric memory cells with domain-wall-mediated switching

A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.

42 ENGINEERING↗

Comparison of 22 kHz and 85 kHz 50 kW Wireless Charging System Using Si and SiC Switches for Electric Vehicle

Fast charging in transportation application requires high-power (>50 kW) operation. The overall size of wireless charging systems (WCS) must increase to meet the high-power requirement. As a result, high power systems produce more electromagnetic field (EMF) emissions. Although higher operating frequencies (85 kHz) reduce the size of inductors and capacitors, system losses tend to increase. High-power systems are traditionally investigated for 10 kHz to 22 kHz operation to reduce the switching loss in the converter, and conductive and magnetic losses in the power pad. The use of SiC MOSFETs reduces conduction and switching losses in the converter even at higher frequencies. In this paper, a comprehensive loss comparison of 50 kW wireless charging system is conducted for 85 kHz and 22 kHz operation of Si MOSFET and SiC MOSFET converters. Detailed performance indexes are compared analytically as a function of frequency and verified using FEA and PLECS. This comprehensive system level study shows that magnetic losses can be reduced significantly, and that EMF emission can be reduced by 50% by moving from 22 kHz to 85 kHz. Moreover, the system requires 50% less copper and allows a significant reduction in the size of the primary and secondary filter capacitor at 85 kHz. The results show that the system efficiency at 85 kHz can be increased by 21% compared to 22 kHz operation by using a SiC MOSFET converter.

Shahidul haque, Moinul↗

Switching strategy for increased efficiency of power converters

Systems and methods for operating a power converter are provided. A DC to AC converter can include an inner converter and an outer converter. The inner converter can include an isolation transformer a first plurality of switching devices. The outer converter can include a second plurality of switching devices. A control method can include determining an output voltage of the outer converter. The control method can further include controlling operation of the inner converter based at least in part on the output voltage of the outer converter.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Three-dimensional co-axial linear photonic switch

Techniques, systems, and devices are disclosed that relate to coaxial photoconductive switch modules. The coaxial photoconductive switch may include an outer conductor, an inner conductor, and a photoconductive material positioned between the inner conductor and the outer conductor. The inner conductor, the outer conductor, and the photoconductive material have a predetermined height. A bias voltage may be applied between the inner conductor and the outer conductor. When light of a predetermined wavelength and a predetermined intensity is incident on the photoconductive material, the photoconductive material may break down allowing a current to flow through the photoconductive material between the inner conductor and the outer conductor.

Conway, Adam↗

Data center coolant switch

A data center cooling system has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during a first mode. When an appropriate time has been reached to switch from the first mode to a second mode, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid (compared to the first fluid). It has a second heat transfer fluid freezing point, lower than the first heat transfer fluid freezing point, and sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

42 ENGINEERING↗

High-density, fail-in-place switches for computer and data networks

A structure for a network switch. The network switch may include a plurality of spine chips arranged on a plurality of spine cards, where one or more spine chips are located on each spine card; and a plurality of leaf chips arranged on a plurality of leaf cards, wherein one or more leaf chips are located on each leaf card, where each spine card is connected to every leaf chip and the plurality of spine chips are surrounded on at least two sides by leaf cards.

Coteus, Paul W.↗

Data center coolant switch

A data center cooling system has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during a first mode. When an appropriate time has been reached to switch from the first mode to a second mode, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid (compared to the first fluid). It has a second heat transfer fluid freezing point, lower than the first heat transfer fluid freezing point, and sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

42 ENGINEERING↗

Resistive switching memory device

Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.

36 MATERIALS SCIENCE↗

Bi-triaxial photoconductive switch module

Methods, systems, and devices describe bi-triaxial photoconductive switch modules that that eliminate the need for external DC blocking capacitors, while providing a highly compact structure that can produce bipolar output waveforms conducive to feeding to radio-frequency (RF) devices, such as antennas. Some implementations of the disclosed bi-triaxial photoconductive switch modules utilize unified cast-in-place capacitors that can be designed with an appropriate geometry, volume and orientation to provide desired energy storage capacity while eliminating or reducing parasitics.

42 ENGINEERING↗

Cold cathode switching device and converter

A cold-cathode switching device is presented. The cold-cathode switching device includes a housing defining a chamber; an ionizable gas disposed in the chamber; and a plurality of electrodes disposed in the chamber. The plurality of electrodes includes a cathode and an anode defining a discharge gap, and wherein at least one of the cathode and anode comprises a material that is liquid at an operating temperature of the cathode or the anode.

42 ENGINEERING↗