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At least 919 records · Page 51

Replacing photomultiplier tubes with silicon photomultipliers for nuclear safeguards applications

Photomultiplier tubes (PMTs) have been used for decades as the default light detection technology for scintillator-based radiation monitors. PMTs come with a handful of disadvantages, however, including large volume usage, fragility, high-voltage requirements, and susceptibility to magnetic fields. Arrays of silicon photomultipliers (SiPMs) are a possible alternative to PMTs providing similar performance while offering improvements in the areas listed. We focus on straightforward “drop-in replacement” evaluations by imposing a single channel output of the SiPM signal and a backend electronics data acquisition and analysis routine identical to that used for PMTs. In the realm of nuclear safeguards, the primary performance metric for gamma spectroscopy is detector resolution, and for neutron detection it is pulse shape discrimination (PSD) to separate neutron and gamma signals. In this work we present the results of replacing a PMT with a 2” x 2” SiPM array mounted, in turn, to the same 2” x 2” cylindrical sodium iodide (NaI) crystal. The ultimate comparison for this gamma spectrometry is confirmation of uranium enrichment standards, ranging from depleted uranium to 93% highly enriched uranium (HEU), by analyzing the resulting spectra with both a simple integral scaling in key energy regions of the spectrum, as well as with the NaIGEM software package. In addition to the gamma spectroscopy work, we will present the latest results on comparing the PSD capabilities of a 4” x 4” SiPM array to a 5” PMT. As with the gamma spectroscopy evaluations, the light detectors are mounted in turn to the same liter-scale organic scintillators. This neutron-focused work includes evaluation of prototype SiPM readout boards with a single output signal summed over 256 individual SiPM pixels, and evident tradeoffs between PSD capability and fast response.

Engineering - Instrumentation related to nuclear s↗

Electrolyte formulations for electrochemical cells containing a silicon electrode

Additives to electrolytes that enable the formation of comparatively more robust SEI films on silicon anodes. The SEI films in these embodiments are seen to be more robust in part because the batteries containing these materials have higher coulombic efficiency and longer cycle life than comparable batteries without such additives. The additives preferably contain a nitrate group.

25 ENERGY STORAGE↗

Silicon carbide power inverter/rectifier for electric machines

The present disclosure involves a two stage inverter, a system for electrical power conversation, and a method of converting electrical power using silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). One example implementation includes using two or more SiC MOSFETs in series with each MOSFET having a gate terminal for triggering a state switch between an on (conducting) and off (non-conducting) state of the MOSFET. An AC terminal is connected between the series SiC MOSFETS, and the series SiC MOSFETs are connected across a DC bus and in parallel with one or more capacitors.

Shenoy, Suratkal P.↗

EIC Physics from An All-Silicon Tracking Detector

The proposed electron-ion collider has a rich physics program to study the internal structure of protons and heavy nuclei. This program will impose strict requirements on detector design. This paper explores how these requirements can be satisfied using an all-silicon tracking detector, by consideration of three representative probes: heavy flavor hadrons, jets, and exclusive vector mesons.

Arrington, John↗

Fission Product Diffusion in Silicon Carbide: As Revealed by Computer Simulations and Experimental Measurements

The diffusion and release of fission products through silicon carbide in the tri-structural isotropic (TRISO) fuel particles remain unsolved for decades. The underlying mechanism is quite challenging to be determined. To help unveil the mysterious story, the current work applies molecular dynamics method to show the stability of silver, palladium, ruthenium and iodine as an interstitial and their atomic diffusion along coincident site lattice (CSL) boundary, especially ?3 grain boundary (GB). The major finding presents a much faster diffusion along GB than in bulk for all elements considered. The reasonably close estimate to experiments and simulations where available has confirmed the important role of grain boundary diffusion of Ag and Pd in SiC. However, the discrepancy addressed in Ag with measurements from fuel studies suggest a more complicated mechanism, which might be in correlation with high energy grain boundaries or the presence of crack. The subsequent characterization of Ru and I distribution in SiC-PyC-SiC diffusion couples, which have been ion irradiated at 900?C to 10 dpa and 20 dpa, has performed by secondary ion mass spectrometry (SIMS) analysis. The experiment measurements correlate well with the grain boundary diffusion by simulation, which provide further evidences that the grain boundary diffusion cannot be neglected once the fission products are accessible at the grain boundary.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Electroplated Au for conformal coating of high aspect ratio silicon structures

A method for electroplating a nonmetallic grating including providing a nonmetallic grating; performing an atomic layer deposition (ALD) reaction to form a seed layer on the nonmetallic grating; and electroplating a metallic layer on the seed layer such that the metallic layer uniformly and conformally coats the nonmetallic grating. An apparatus including a silicon substrate having gratings with an aspect-ratio of at least 20:1; a atomic layer deposition (ALD) seed layer formed on the gratings; and an electroplated metallic layer formed on the seed layer, wherein the electroplated metallic layer uniformly and conformally coats the gratings.

Rowen, Adam M.↗

Wavelength control and monitor for dense wavelength division multiplexing (DWDM) silicon photonic receiver

Techniques and circuitry for wavelength monitor and control are disclosed herein. The disclosed wavelength monitor and control circuitry and techniques are designed to realize a multi-channel DWDM optical link by using a photonic receiver that dynamically adjusts resonant wavelengths of the microring drop filter (MDF), as needed. The wavelength monitor and control circuitry can monitor and control the resonant wavelengths of multiple MDFs for a DWDM silicon photonics receiver with minimum power and area overhead. In an embodiment, circuitry for an optical receiver comprises an MDF having resonant wavelength for multiple DWDM channels, and circuitry to control and monitor the resonant wavelength of the MDF in real-time and in manner that compensates for deviation between actual resonant wavelength of the MDF and the incident optical wavelength of the MDF.

Huang, Tsung Ching↗

Localized superconcentrated electrolytes for silicon anodes

Localized superconcentrated electrolytes (LSEs) for use in systems with silicon-based or carbon/silicon composite-based anodes are disclosed. The LSEs include an active salt, a nonaqueous solvent in which the active salt is soluble, and a diluent in which the active salt has a solubility at least 10 times less than solubility of the active salt in the nonaqueous solvent. Systems including the LSEs also are disclosed.

Zhang, Ji-Guang↗

Electrolyte formulations for electrochemical cells containing a silicon electrode

Additives to electrolytes that enable the formation of comparatively more robust SEI films on silicon anodes. The SEI films in these embodiments are seen to be more robust in part because the batteries containing these materials have higher coulombic efficiency and longer cycle life than comparable batteries without such additives.

Zhu, Ye↗

Near net shape bulk laminated silicon iron electric steel for improved electrical resistance and low high frequency loss

The invention involves producing discontinuous, flake-shaped particles of a soft magnetic material, coating the flake-shaped particles with an electrically insulating coating, and consolidating the coated flaked-shaped particles to form a soft magnetic bulk shape. The consolidated bulk shape can comprise a layer or a simple or complex 3D magnet part shape, which has a consolidated layered microstructure that includes laminated soft magnetic regions that are substantially encapsulated by an electrical insulating layer to increase the resistivity of soft magnetic material, especially when used in silicon iron magnet parts.

Cui, Jun↗

Silicon Carbide Multilayer Piping for High Temperature sCO 2 Brayton Cycle

Efficiencies of greater than 50% in supercritical carbon dioxide (sCO 2 ) Brayton power cycle systems can be achieved only at turbine inlet temperatures of above 700°C. In support of the push to higher temperatures, a finite element model was developed by Materials Research & Design, Inc. (MR&D) with support from Ceramic Tubular Products, LLC. (CTP) to guide the refinement of CTP’s high temperature ceramic multilayer piping. The multilayer technology combines the advantages of a monolithic silicon carbide (SiC) tube and a SiOC f /SiOC ceramic matrix composite (CMC), the result of which is a material with high-temperature strength and stability, high mechanical and thermal shock resistance, and high corrosion resistance. In addition to fabricating test specimens to refine the finite element model, long-duration, high temperature CO 2 exposure tests were performed by Sandia National Laboratories (SNL) on two varieties of inner monolithic SiC.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for developing future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require research and development to be able to cope with the foreseen extreme radiation environments of the High Luminosity runs of the Large Hadron Collider and future hadron colliders like FCC-hh and SPPC.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Integrated silicon carbide diode rectifier circuits

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.

Barlow, Matthew↗

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗

Large-format battery anodes comprising silicon particles

Large-scale anodes containing high weight percentages of silicon suitable for use in lithium-ion energy storage devices and batteries, and methods of manufacturing the same, are described. The anode material described herein can include a film cast on a current collector substrate, with the film including a plurality of active material particles and a conductive polymer membrane coated over the active material particles. In some embodiments, the conductive polymer membrane comprises polyacrylonitrile (PAN). The method of manufacturing the anode material can include preparation of a slurry including the active material particles and the conductive polymer material, casting the slurry on a current collector substrate, and subjecting the composite material to drying and heat treatments.

25 ENERGY STORAGE↗

Search for High-Pressure Silicon Phases: Reaching the Extreme Conditions with High-Intensity Laser Irradiation

Controlling electronic and optical properties of semiconducting materials could substantially expand their functionality and enable new pathways for the formation of ‘smart’ materials for emerging innovative applications. An emerging new path for the synthesis of exotic silicon (Si) polymorphs is irradiation of bulk diamond-cubic Si by ultrashort laser pulses at relativistic intensity above 1019 W/cm2. Exotic polymorphs are formed due to interaction with MeV-energy electrons generated in laser-produced high-temperature plasma state. The unusual Si structures are found in the form of 5–10 nm nanoparticles confined deep in the bulk of 500-μm-thick Si samples. Raman spectroscopy, electron microscopy and X-ray diffraction studies provide an unequivocal evidence of exotic Si phase formation. A key advantage of such relativistic irradiation lies thereby in the fact that large quantities of such exotic Si is synthesised embedded within the bulk diamond-cubic Si and that further the formed Si polymorphs are stable at ambient temperature and pressure. They are thus available for further studies for electronic applications in selective band gap engineering.

Rapp, Ludovic↗

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗