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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Determination of surface recombination velocity in heavily doped silicon

A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

Watanabe, M.↗
NASA NTRS1977

Inexpensive silicon sheets for solar cells

Technique of producing silicon sheets by drawing gridlike or porous graphite gauze through silicon melt is readily adaptable to mass production, making process applicable to inexpensive manufacture of solar cell arrays.

Ciszek, T. F.↗
NASA NTRS1976

A program continuation to develop processing procedures for advanced silicon solar cells

Shallow junctions, aluminum back surface fields and tantalum pentoxide (Ta205) antireflection coatings coupled with the development of a chromium-palladium-silver contact system, were used to produce a 2 x 4 cm wraparound contact silicon solar cell. One thousand cells were successfully fabricated using batch processing techniques. These cells were 0.020 mm thick, with the majority (800) made from nominal ten ohm-cm silicon and the remainder from nominal 30 ohm-cm material. Unfiltered, these cells delivered a minimum AMO efficiency at 25 C of 11.5 percent and successfully passed all the normal in-process and acceptance tests required for space flight cells.

Avery, J. E.↗
NASA NTRS1976

Silicon ribbon growth by a capillary action shaping technique

The technique of silicon ribbon growth by the capillary action shaping is assessed for applicability to photovoltaic power device material. Ribbons 25 mm in width and up to 0.5 m in length have been grown from SiC dies, and some new characteristics of growth from such dies have been identified. Thermal modifiers have been studied, and systems were developed which reduce the frozen-in stress un silicon ribbons and improve the thickness uniformity of the ribbons. Preliminary spreading resistance measurements indicate that neither surface striations nor twin boundaries give rise to appreciable resistivity variations, but that large-angle grain boundaries cause local resistivity increases of up to 200%.

Schwuttke, G. H.↗
NASA NTRS1977

Development of a high efficiency thin silicon solar cell

Preparation for full scale operation of the pilot line included reduction of the back metallization coverage to reduce the differential thermal expansion of very thin cells, mapping excess injection current at low dark forward voltage, determining the radius of curvature for fracture as a function of silicon thickness, and determining absorptance/emittance ratios for thin silicon solar cells.

Lindmayer, J.↗
NASA NTRS1977

Evaluation of selected chemical processes for production of low-cost silicon, phase 2

Potential designs for an integrated fluidized-bed reactor/zinc vaporizer/SiCl4 preheater unit are being considered and heat-transfer calculations have been initiated on versions of the zinc vaporizer section. Estimates of the cost of the silicon prepared in the experimental facility have been made for projected capacities of 25, 50, 75, and 100 metric ton of silicon. A 35 percent saving is obtained in going from 25 metric ton/year to the 50 metric ton/year level. This analysis, coupled with the recognition that use of two reactors in the 50 metric ton/year version allows for continued operation (at reduced capacity) with one reactor shut down, has resulted in a recommendation for adoption of an experimental facility capacity of 50 metric ton/year or greater. At this stage, the change to a larger size facility would not increase the design costs appreciably. In the experimental support program, the effects of seed bed particle size and depth were studied, and operation of the miniplant with a new zinc vaporizer was initiated, revealing the need for modification of the latter.

Blocher, J. M., Jr.↗
NASA NTRS1977

Modeling of fluidized bed silicon deposition process

The model is intended for use as a means of improving fluidized bed reactor design and for the formulation of the research program in support of the contracts of Silicon Material Task for the development of the fluidized bed silicon deposition process. A computer program derived from the simple modeling is also described. Results of some sample calculations using the computer program are shown.

Kim, K.↗
NASA NTRS1977

The 13.9 GHz short pulse radar noise figure measurements utilizing silicon and gallium-arsenide mixer diodes

An analysis was made on two commercially available silicon and gallium arsenide Schottky barrier diodes. These diodes were selected because of their particularly low noise figure in the frequency range of interest. The specified noise figure for the silicon and gallium arsenide diodes were 6.3 db and 5.3 db respectively when functioning as mixers in the 13.6 GHz region with optimum local oscillator drive.

Dombrowski, M.↗
NASA NTRS1976

A laser based characterization facility for silicon photocell studies

A computer controlled laser based characterization facility used for detailed studies of silicon photodetectors and spectral response measurement on silicon solar cell is described. The power in the laser beam is measured with respect to electrical standards using an electrically calibrated pyroelectric radiometer.

Geist, J.↗
NASA NTRS1976

Silicon solar cell testing in concentrated sunlight and simulated sunlight

A method is described for testing silicon solar cells in concentrated sunlight and simulated sunlight. Concentrated sunlight is obtained by using an acrylic Fresnel lens; the simulated sunlight source is a short arc Xenon lamp. Average illumination levels during the tests are inferred from an assumed linear relationship between short circuit current and illumination. The linearity assumption is investigated for 0.3 alpha cm base resistivity silicon cells and found to be valid. Some typical results are presented to illustrate the type of information obtained during the testing.

Burgess, E. L.↗
NASA NTRS1977

Friction, deformation and fracture of single-crystal silicon carbide

Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface. Anisotropic friction, deformation and fracture on the basal plane are primarily controlled by the slip system and cleavage.

Miyoshi, K.↗
NASA NTRS1976

New aromatic silicon-containing polyamides

The experiments described were aimed at studying systematically the effect of silyl linkages on the thermogravimetric and thermomechanical properties of aromatic polyamides. Specifically, 18 aromatic silicon-containing polyamides were synthesized via interfacial polymerization of six silicon-containing diacid chlorides with 3,3-prime-diaminodiphenylmethane, 3,3-prime-diaminobenzophenone, and 1-(3-prime-aminobenzyl)-4-(3-double prime-aminobenzoyl)benzene. All polyamides were soluble in m-cresol and N,N-dimethylacetamide, and had glass transition temperatures between 178 and 254 C. Thermogravimetric analysis conducted in static air on film specimens showed 5 and 10 percent weight losses between 331 and 400 C and 354 and 440 C, respectively. The potential gain in processability engendered by incorporation of silane substituents was offset in most cases by substantial losses in thermo-oxidative stability.

Pratt, J. R.↗
NASA NTRS1976

An investigation of impurity redistribution in diffused layer on /n+/-p silicon solar cells parameters

Recent calculations by Wang et al. (1974) have shown that the short-circuit current for silicon solar cells is sensitive to the impurity distribution in the diffused and base region. In the present work, these theoretical results were verified by experimentally investigating the impurity profile and sheet resistance of the diffused layers of (n+)-p silicon solar cells fabricated by normal diffusion processes and at subsequently various drive-in times. Impurity profiles of the n+ diffused layer, measured by differential Hall and resistivity technique, resemble the erfc distribution. The junction depth is larger as drive-in time increases. Measured short-circuit current is in agreement with calculated ones. Open-circuit voltage is independent of drive-in times, and its calculated values are consistent with capacitance-voltage measurements.

Wang, E. Y.↗
NASA NTRS1977

Electron-impact excitation of carbon and silicon in the distorted-wave approximation

The 3P to 1D electron-impact excitation cross section within the ground configuration of both neutral carbon and silicon is calculated in the distorted-wave approximation of the two-state Hartree-Fock coupled equations. An essential element of the present treatment is that orthogonality to core orbitals is not assumed in deriving equations for the scattering orbitals. A local adiabatic polarization potential is also added to the distorted-wave equations. Both elements are necessary in getting good agreement with close-coupling results for carbon to low impacting energies. The agreement is sufficiently good that predictions for silicon should be accurate to within a factor of 2.

Pindzola, M. S.↗
NASA NTRS1977

The influence of autoionization accompanied by excitation on the dielectronic recombination and the ionization equilibrium of silicon ions

The dielectronic recombination rate coefficients have been calculated for the various ionization stages of silicon. Account has been taken of all stabilizing radiative transitions and all autoionization processes which involve a single-electron electric-dipole transition of the recombining ion core. For certain ions the dielectronic recombination rates, although still larger than the direct radiative recombination rates, are found to be substantially reduced when account is taken of the effects of a previously neglected autoionization process in which the excited recombining ion core undergoes a delta n = 0 transition to a lower excited state. The temperatures at which these ions have their maximum abundance in corona equilibrium are significantly reduced when use is made of the new dielectronic recombination rates. Calculations are also presented for the total rates of radiative energy loss from isothermal steady-state plasmas due to the line and continuum emission of silicon ions.

Jacobs, V. L.↗
NASA NTRS1976

Large area Czochralski silicon for solar cells

A detailed model of a typical Czochralski silicon crystal puller is utilized to predict maximum crystal growth rate as a function of various furnace parameters. Results of this analysis, when combined with multiblade slurry sawing, indicate that the Czochralski process is highly attractive for achieving near-term cost reduction of solar cell silicon.

Rea, S. N.↗
NASA NTRS1978

Cure-rate data for silicone adhesive

Report describes work with concentrations down to 0.07 percent and is useful when applying adhesives in terrestrial and space applications. Cured Silicone retains low-outgassing properties as well as its snap, elongation, and resilience. Tests for hardness of silicone material also showed good results. No gross hysteresis observable on recovery from stretching nor was there any decrease in hardness.

Clatterbuck, C.↗
NASA NTRS1978

Brazed boron-silicon carbide/aluminum structural panels

Fluxless brazing process minimizes degradation of mechanical properties composite material of silicon carbide coated boron fibers in an aluminum matrix. Process is being used to fabricate full-scale Boron-Silicon Carbide/Aluminum-Titanium honeycomb core panels for flight testing and ground testing.

Arnold, W. E., Jr.↗