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At least 919 records · Page 51

Light sources with bias tunable spectrum based on van der Waals interface transistors

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

36 MATERIALS SCIENCE↗

Characterization and Failure Analysis of 650-V Enhancement-Mode GaN HEMT for Cryogenically Cooled Power Electronics

In order to evaluate the feasibility of newly developed gallium nitride (GaN) devices in a cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN high-electron mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di / dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the ON-resistance of the channel at the cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. Additionally, the ultrafast switching speed-induced high di / dt and dv / dt at cryogenic temperatures amplify the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultrafast switching speed are given in this article.

42 ENGINEERING↗

High Temperature Thick Film Sensor Development Based on Refractory Oxide Semiconductors

Solid-state, high-temperature sensing devices are required for accurate temperature, strain/stress, and failure monitoring for a range of advanced manufacturing, transportation, and military applications. High temperature conditions limit sensing strategies, where typically traditional metal and semiconductor materials are unstable, and the sensing options are limited to optical spectroscopy methods. In addition, strategies to embed the sensors directly within active components and protective thermal refractory are of interest that permit near-environment sensing which is not possible with the traditional electronic materials and components. Rare-earth chromite semiconductors exhibit some properties of interest for high temperature sensing technologies, such as: high microstructure and chemical stability, relatively high electronic conductivity at high temperatures, and relative thermal expansion coefficient matching to refractory thermal protective insulation (such as high-zirconia and -alumina ceramics). In this work, n-type and p-type doped lanthanum chromites compositions were computationally modelled and prepared, and the electrical, thermoelectric, and thermomechanical properties were measured for the obtained material systems. A few compositions were then processed into thick film health and temperature sensors and tested at high temperatures. To establish relative stability under harsh environment conditions, post- mortem microstructure and chemical composition was characterized after extended and cycle testing at high temperatures.

20 FOSSIL-FUELED POWER PLANTS↗

Micro-fabricated integrated coil and magnetic circuit and method of manufacturing thereof

A micro-fabricated electromagnetic device is provided for on-circuit integration. The electromagnetic device includes a core. The core has a plurality of electrically insulating layers positioned alternatingly between a plurality of magnetic layers to collectively form a continuous laminate having alternating magnetic and electrically insulating layers. The electromagnetic device includes a coil embedded in openings of the semiconductor substrate. An insulating material is positioned in the cavity and between the coil and an inner surface of the core. A method of manufacturing the electromagnetic device includes providing a semiconductor substrate having openings formed therein. Windings of a coil are electroplated and embedded in the openings. The insulating material is coated on or around an exposed surface of the coil. Alternating magnetic layers and electrically insulating layers may be micro-fabricated and electroplated as a single and substantially continuous segment on or around the insulating material.

36 MATERIALS SCIENCE↗

Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV

Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.

42 ENGINEERING↗

Electrically driven light emission from single quantum dots using pulsed MOS capacitors

Robust, nanoscale light-emitting devices are attractive for emerging photonic and quantum engineering applications. However, conventional approaches suffer from fabrication challenges or lack the potential to address individual nanostructures, such as quantum dots. In this paper, we present a device that can produce electrically driven light emission from a single quantum dot using a single carbon nanotube as the charge injection contact. Here, the device has a metal-oxide-semiconductor capacitor structure and operates based on an unconventional mechanism of electroluminescence, which relies on the use of bipolar voltage pulses. The proposed device can be fabricated in a simple manner using conventional lithographic processes, offering a scalable approach toward the development of optoelectronic devices at the single dot level.

42 ENGINEERING↗

Ternary nitride semiconductors in the rocksalt crystal structure

Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula Mg x TM 1−x N ( TM = Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm 2 V −1 ⋅s −1 electron mobility for MgZrN 2 grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary Mg x TM 1−x N semiconductors are also structurally compatible both with binary TM N superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight Mg x TM 1−x N as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.

36 MATERIALS SCIENCE↗

Facile integration of low-cost black phosphorus in solution-processed organic solar cells with improved fill factor and device efficiency

Black phosphorus (BP) as a promising two-dimensional (2D) material has gained great attention in nanoelectronic devices because of its intrinsic semiconductor characteristics. However, the poor material availability and solution processability have been major roadblocks that hinder its wider application in microelectronics. Herein, readily available, lost-cost BP was utilized as an effective component that was integrated via a facile solution process for the fabrication of bulk heterojunction organic solar cells (OSCs). An impressive fill factor (FF) of 74.2% and power conversion efficiency (PCE) of 10.5% were realized in the OSCs incorporating 10 wt% of BP in the active layer of the benchmark polymer donor PTB7-Th and PC71BM acceptor, corresponding to a 20% PCE enhancement compared to the BP-free binary devices. The efficiency enhancement can be attributed to BP's high hole carrier mobility that facilitates better carrier extraction and suppression of the recombination. BP has been further demonstrated to be effective in additional solar cells based on other photovoltaic (PV) materials, including non-fullerene OSCs. The successful incorporation of the inexpensive BP in the solution-based fabrication of OSCs opens the door for its application in high performance, low cost flexible electronics.

14 SOLAR ENERGY↗

VI 3 —a New Layered Ferromagnetic Semiconductor

2D materials are promising candidates for next–generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI 3 , which is based on honeycomb vanadium layers separated by an iodine–iodine van der Waals gap. It has a BiI 3 –type structure ( R3¯, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI 3 becomes ferromagnetic at 49 K, below which magneto–optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. As a result the optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.

2D material↗

Review of radiation-induced defects in GaAs

Radiation-resilient optoelectronic materials are highly desired in space and nuclear applications, and understanding the relevant defects and electronic processes in those materials is crucial for both current and next-generation applications. GaAs is a prototypical semiconductor that serves as a foundational system for describing and understanding optoelectronic devices. In this review, both experimental studies and molecular dynamics (MD) simulations of irradiated GaAs are reviewed, with particular emphasis on the deep-level transient spectroscopy, irradiation-induced amorphization zones, and MD predictions of damage structures. The MD results are also compared to predictions of the non-ionized energy-loss model. Recent theoretical studies, in particular, density functional theory based calculations on the simple intrinsic defects and defect clusters in GaAs, are also reviewed. These defects have an important role in dictating the evolution of GaAs in radiation damage environments, as they impact the coupled dynamics of charge carriers. Finally, possible gaps and challenges toward the general understanding of defect evolution in GaAs are discussed.

36 MATERIALS SCIENCE↗

Implantable biomedical devices on bioresorbable substrates

Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

60 APPLIED LIFE SCIENCES↗

Atomically Defined Edge-Doping of Graphene Nanoribbons for Mesoscale Electronics

The outstanding transformative potential of graphene, an infinite two-dimensional sheet of carbon atoms tightly packed into a honeycomb lattice, has been recognized mostly due to its exceptionally high electric conductivity, thermal conductivity, and tensile strength. These undeniably very desirable properties, however, represent only a very small facet of the true potential of all-sp2 carbon materials and its promise to revolutionize the field of molecular electronics. Graphene's most unusual characteristics emerge when the infinite macroscopic sheet is scaled down to nanometer dimensions. The exploration, realization, and implementation of these truly exotic magnetic and electronic properties rely on the development of innovative synthetic strategies that provide atomically precise control over the self-assembly of mesoscale objects. While traditional device architectures based on inorganic semiconductors have been fabricated using a top-down approach, we pursued a diametrically opposite strategy. Our design of a new generation of high-performance electronic materials relies on a modular bottom-up strategy. This highly multidisciplinary research program has been rooted in the synthesis of functional organic materials with precisely defined properties, their controlled assembly into hierarchical structures, and the evaluation of their performance at the molecular and the macroscopic scale. A part of this research program we have developed the chemical tools required to synthesize and to fine-tune the physical properties of graphene nanoribbons (GNR) with atomic precision. We further demonstrated that the innovative techniques and the expanded knowledge can be used to rationally tailor desired physical properties and function into nanometer-scale carbon-based electronic devices; e.g. transistors as logic gates in computing, data storage media based on electrically gated spin valves, or molecular amplifiers, all functionally integrated in atomically defined GNRs. We demonstrated the design and experimental realization of a rationally engineered graphene nanoribbon superlattice that hosts a 1D array of symmetry-protected topological states. We developed a hierarchical bottom-up fabrication strategy for graphene nanoribbons that preferentially exhibit a single heterojunction interface rather than a random statistical sequence of junctions along the ribbon. We reported the bottom-up synthesis of a series of atomically precise graphene nanoribbons featuring trigonal planar heteroatom dopants (nitrogen, oxygen, and sulfur) along the edges that induce a narrowing of the intrinsic band gap by ~0.2–0.3 eV per dopant atom. We reported the bottom-up synthesis of a graphene nanoribbon heterostructure featuring a highly tunable porphyrin quantum dot embedded at the center of a solution processable graphene nanoribbon. We reported a new technique for fabricating bottom-up graphene nanoribbon heterojunctions through a late-stage chemical transformation that results in atomically sharp heterojunction structures from a single precursor. We demonstrated the intrinsic performance enhancement of a composite material comprised of gold nanoparticles (AuNPs) embedded in a bottom-up synthesized graphene nanoribbon matrix for the electrocatalytic reduction of CO 2 . We developed a scalable, solution-based approach toward the synthesis of an exotic class of polycyclic aromatic hydrocarbons that exhibit unusual electronic and magnetic properties in the ground state. We reported the bottom-up synthesis and characterization of atomically-defined graphene nanoribbons featuring a regioregular pattern of group III dopant atoms (boron) along the backbone of the ribbon.

36 MATERIALS SCIENCE↗

Surface Ligand Effects on Energetics, Charge Transfer, and Stability at Interfaces Between Metal Halide Perovskites and Organic Semiconductors

Chemistry at organic-inorganic interfaces plays a major role in determining the performance of electronic and optoelectronic devices. Understanding, developing, and using surface chemistry is thus essential for creating improved and novel materials and devices. Organic metal halide perovskites (HPs) are inexpensive semiconductors that can be printed from solution to make efficient photovoltaic cells for harvesting solar energy, light emitting diodes for energy efficient solid-state lighting applications, solid-state lasers, and even spin selective devices with applications to quantum computing. To realize the potential of HPs, their surface chemistry and interfacial properties must be better understood and appropriately adjusted to meet the needs of the targeted application. For example, surface chemistry influences non-radiative recombination, which influences the efficiency of light emission and solar energy conversion, charge-carrier injection and extraction from optoelectronic devices, and material and device stability. This research project centered around determining how the surface chemistry of HP thin films and nanoparticles influences optical properties, charge transfer processes, energetics, and stability. In this project we characterized ligand binding strengths to HPs; determined how surface ligand chemistry influences photoluminescence properties, energetics, and charge transfer processes; determined that surface ligands often penetrate into HPs and uncovered methods of reducing surface ligand penetration through structural modifications; and discovered how interfacial energetics impact charge transfer processes and photovoltaic performance parameters. Overall, this research established important insights into how surface ligands interact with HPs to influence their optical properties, electronic properties, stability, and device level performance.

14 SOLAR ENERGY↗

Opto-valleytronic imaging of atomically thin semiconductors

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular motion and associated valley polarization and valley coherence as key elements of opto-valleytronic functionality. Here, we introduce two-dimensional polarimetry as means of direct imaging of the valley pseudospin degree of freedom in monolayer transition metal dichalcogenides. Using MoS 2 as a representative material with valley-selective optical transitions, we establish quantitative image analysis for polarimetric maps of extended crystals, and identify valley polarization and valley coherence as sensitive probes of crystalline disorder. Moreover, we find site-dependent thermal and non-thermal regimes of valley-polarized excitons in perpendicular magnetic fields. Finally, we demonstrate the potential of widefield polarimetry for rapid inspection of opto-valleytronic devices based on atomically thin semiconductors and heterostructures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Non-reciprocal acoustoelectric microwave amplifiers with net gain and low noise in continuous operation

Abstract Piezoelectric acoustic devices that are integrated with semiconductors can leverage the acoustoelectric effect, allowing functionalities such as gain and isolation to be achieved in the acoustic domain. This could lead to performance improvements and miniaturization of radio-frequency electronic systems. However, acoustoelectric amplifiers that offer a large acoustic gain with low power consumption and noise figure at microwave frequencies in continuous operation have not yet been developed. Here we report non-reciprocal acoustoelectric amplifiers that are based on a three-layer heterostructure consisting of an indium gallium arsenide (In 0.53 Ga 0.47 As) semiconducting film, a lithium niobate (LiNbO 3 ) piezoelectric film, and a silicon substrate. The heterostructure can continuously generate 28.0 dB of acoustic gain (4.0 dB net radio-frequency gain) for 1 GHz phonons with an acoustic noise figure of 2.8 dB, while dissipating 40.5 mW of d.c. power. We also create a device with an acoustic gain of 37.0 dB (11.3 dB net gain) at 1 GHz with 19.6 mW of d.c. power dissipation and a non-reciprocal transmission of over 55 dB.

42 ENGINEERING↗

Silyl Hot-Injection Versus Thiocyanate Heat-Up Synthesis of Chalcohalides: Pushing the Size and Composition Envelope

Chalcohalide semiconductors are rapidly gaining traction as stable, biocompatible materials for energy conversion applications. While the solid-state synthesis of bulk chalcohalides is relatively well-developed, the colloidal chemistry of these materials is still in its early stages. Colloidal semiconductors are often advantageous in device fabrication due to the cost effectiveness of solution processing. Thus, we aim to increase the utility of chalcohalides in device fabrication by establishing solution phase chemistry of promising compositions. We show that silyl hot-injection is a versatile and effective method of making colloidal PnChI (Pn = Sb, Bi; Ch = S, Se) and Sn 2 PnS 2 I 3 (Pn = Sb, Bi) chalcohalides of tunable sizes and compositions. Furthermore, we demonstrate the preparation of mixed-pnictide chalcohalides through direct hot-injection and/or postsynthetic cation exchange, the latter being one of the few reported instances in chalcohalides. Additionally, we use the thiocyanate heat-up approach in combination with density functional theory to study halide mixing in quaternary tin chalcohalides. By pushing the limits of each synthetic technique, we have designed more soluble chalcohalides with tunable compositions while also gaining a better understanding of the efficacy of each procedure in respect to thin film and subsequent device fabrication. In addition to size and composition tuning, silyl hot-injection can help facilitate the future development and wide-scale application of chalcohalide-based devices by expanding the selection of solution-processable chalcohalides.

halogens↗

Exceptional Alignment in a Donor–Acceptor Conjugated Polymer via a Previously Unobserved Liquid Crystal Mesophase

Abstract Orienting polymer semiconductors is desirable to optimize device characteristics, provide insight into microstructure, and magnify subtle phase behavior. Here, a combination of uniaxial strain and subsequent heating of the donor–acceptor (DA) polymer PBnDT‐FTAZ is discovered to lead to exceptional optical dichroic ratios of up to 38 (and close to 50 near the polymer's absorption edge). This alignment is achieved due to the existence of a previously undetected thermotropic liquid crystal (LC) mesophase. The LC transition, not discernable through calorimetry, is uncovered through a combination of in situ UV–vis spectroscopy, X‐ray scattering, and dynamic mechanical analysis (DMA). Comparing PBnDT‐FTAZ to the non‐fluorinated PBnDT‐HTAZ and the homo polymer PBnDT, all of which show similar thermal transitions, reveals that exceptional alignment is only found in PBnDT‐FTAZ. This is attributed to the PBnDT‐FTAZ film having two distinct liquid crystal populations, and the polymer templating to a highly aligned, high‐clearing temperature population when heated. The DMA thermal relaxation behavior observed here is also seen in other DA conjugated polymers suggesting that such thermotropic LC mesophases may be common in these materials. These findings demonstrate a polymer semiconductor with remarkable alignment and uncover phase behavior with broad implications for process‐structure‐property relationships in polymer semiconductors.

36 MATERIALS SCIENCE↗

Spectral signatures of transverse optical modes in semiconductor nanowires

In order to build nanophotonic devices, it is important to understand and ultimately control the optical mode structure within potential components such as nanoscale waveguides. However, experimental characterization of such modes in the optical regime is difficult due to the nanoscale dimensions of such components and the perturbations that would be induced by a near-field probe. Here, we demonstrate a probe-free, far-field method to characterize the optical modes within GaN nanowires (NWs) based on a novel off-axis scanning confocal microscope system. Using this microscope, we observe spectral signatures resulting from lateral leakage of waveguide modes when they exceed their respective cutoff limits. We identify these modes within hyperspectral images using an analytical model coupled with finite element simulations. The model can also be used to predict the spectral signatures for given geometrical and dielectric parameters, which enabled us to deduce the transverse dimension of the NW from hyperspectral images with an accuracy of ∼ <#comment/> 30 nm .

Wang, Maoji↗