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At least 919 records · Page 51

Updated analysis of the Er 170 ( p , t ) Er 168 reaction data

More than 200 states up to 4.1 MeV excitation have been populated in 168 Er with the 170 Er ( p , t ) reaction at 25 MeV incident energy. About 80 of these states, with 0 + and 2 + assignments, were reported in a previous publication [D. Bucurescu et al., Phys. Rev. C 73, 064309 (2006)]. Here, the present work considerably enriches the knowledge of this nucleus. A multistep coupled-channels analysis of the angular distributions is now presented for all the states observed in this experiment. Spin and parity values between 0 + and 7 - are newly assigned for more than 100 states. For the states already reported in the ENSDF database with J π values there is a good agreement with our values. The 168 Er nucleus remains one of the best experimentally known nuclei for states with low and medium spins below 4 MeV excitation energy, representing a challenge for future microscopic structure model calculations aiming to disentangle the contributions of different excitation degrees of freedom.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Different bonding type along each crystallographic axis: Computational study of poly($\textit{p}$-phenylene terephthalamide)

Poly($\textit{p}$-phenylene terephthalamide) (PPTA) exhibits van der Waals (vdW) bonding along its $\textit{a}$ axis, hydrogen bonding along its $\textit{b}$ axis, and covalent bonding along its $\textit{c}$ axis. In this work, we explore the structural and mechanical properties of PPTA using density functional theory with various functionals including LDA, PBE, PBE+rVV10L, SCAN, and SCAN+rVV10, compared with available experiments. The hierarchy of nonempirical semilocal functionals LDA, PBE, and SCAN (not fitted to any multicenter bonded system) includes differing amounts of intermediate-range vdW interaction. rVV10 is the long-range vdW correction. (rVV10L differs from rVV10 only in the value of a range parameter.) Among the tested functionals, SCAN shows the best performance for the lattice parameters of PPTA along the two crystal directions involving vdW or hydrogen-bond interaction. The equilibrium lattice constants obtained by SCAN and PBE+rVV10L are closest to experimental data, while SCAN+rVV10 slightly overbinds the system. We study the mechanical response of PPTA by applying strain along three lattice directions. Due to the inclusion of vdW interaction, SCAN, PBE+rVV10L, and SCAN+rVV10 all exhibit correct bonding strain-energy curves. On the contrary, PBE strongly underestimates the vdW interaction needed to resist uniaxial stretching along the $\textit{a}$ axis. The Young's modulus and yield strength of PPTA are computed and compared with previous results. The experimental values are much smaller than the computed ones, mainly due to the fact that the PPTA fiber samples used for measurements are mechanically weaker than the perfect molecular crystals considered in the simulations. Interestingly, when a compressive uniaxial stress of 25 Kbar is applied along the $\textit{b}$ axis, a structural phase transition, in which the hydrogen bonds reform along one diagonal of the $\textit{ab}$ rectangle, is predicted by SCAN.

36 MATERIALS SCIENCE↗

Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of 2.13$^{-0.05}_{+0.07}$A° to 5.07$^{0.83}_{+2.58}$A°,depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Cape EGS: Frisco 2-P Well Stimulation Microseismic Data

This dataset contains microseismic data acquired during the Frisco 2-P well stimulation project led by Fervo Energy, conducted between June 1 and June 11, 2024, near the Utah FORGE geothermal site. The microseismic data was collected from various Utah FORGE wells: via Distributed Acoustic Sensing (DAS) fiber in 16B, and three 3-component geophones located in wells 56-32, 78B, and 32. The dataset is structured in SEGY format, where the first nine traces represent data from the geophones, and the remaining traces capture DAS data from well 16B. Each SEGY file in this dataset contains triggered microseismic events, with event initiation based on Short-Time Average over Long-Time Average (STA/LTA) detection criteria during the stimulation process. Files are grouped by time intervals and named following the structure "[WellPad][WellName][Month]_[Year]Divine_Trigger[EventNumber].sgy," indicating well pad, well name, date, and event number. Sampling parameters include a spatial sampling of approximately 2 meters for DAS channels and a temporal sampling rate of 2000 Hz, with each data record spanning 1.2 seconds. The files' coordinates are referenced to the location of the FORGE 16A-32 wellhead, positioned at UTM coordinates: Easting 334641.1891 m and Northing 4263443.693 m. The geographic coordinates for this origin are 38.50402147 latitude and -112.8963897 longitude, with an elevation of 1650.0249 meters above sea level.

15 GEOTHERMAL ENERGY↗

Revealing conductivity of p-type delta layer systems for novel computing applications

This project uses a quantum simulation technique to reveal the true conducting properties of novel atomic precision advanced manufacturing materials. With Moore's law approaching the limit of scaling for the CMOS technology, it is crucial to provide the best computing power and resources to National Security missions. Atomic precision advanced manufacturing-based computing systems can become the key to the design, use, and security of modern weapon systems, critical infrastructure, and communications. We will utilize the state-of-the-art computational methodology to create a predictive simulator for p-type atomic precision advanced manufacturing systems, which may also find applications in counterfeit detection and anti-tamper.

97 MATHEMATICS AND COMPUTING↗

Synthesis and Morphological Characterization of Electroless-Deposited Ni-P Coatings on Diamond Abrasives

Deposition of a coating on rough surfaces faces unique challenges due to the complexity of substrate morphology. In the present research, electroless deposition of a Ni-P coating was successfully deposited on diamond particles. Microtomography was conducted to study the deposition mechanisms. It revealed that the coating coverage rate on diamond particles was affected by the synergistic action of the deposition time, substrate morphology, and hypophosphite concentration. The best coverage was achieved in a solution with 0.2 mol/L hypophosphite. Two major morphological features of the coating: nodular and smooth, were influenced by the deposition parameters, coating integrity, and substrate morphology. The failure was seen in fractured and peeled off coatings. It was due to residual stress produced by the coalescing of crystallites during the deposition. This failure mechanism explains the tendency of coating fracture at three morphological features of the substrate. This work is beneficial to semiconductor manufacturing where effective cutting in chip fabrication is essential.

36 MATERIALS SCIENCE↗

Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-Ideal p-n Diodes

The measurement of the electronic bandgap and exciton binding energy in quasi-one-dimensional materials such as carbon nanotubes is challenging due to many-body effects and strong electron–electron interactions. Unlike bulk semiconductors, where the electronic bandgap is well known, the optical resonance in low-dimensional semiconductors is dominated by excitons, making their electronic bandgap more difficult to measure. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. We show that our s-SWCNT networks have a short minority carrier lifetime due to the presence of interface trap states, making the diodes non-ideal. We use the generation and recombination leakage currents from these non-ideal diodes to measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55 nm), (7,5) (0.83 nm), and (6,5) (0.76 nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs. The techniques outlined here demonstrate a robust strategy that can be applied to measuring the electronic bandgaps and exciton binding energies of a broad variety of nanoscale and quantum-confined semiconductors, including the most modern nanoscale transistors that rely on nanowire geometries.

36 MATERIALS SCIENCE↗

First Measurement of the B + → π + π 0 π 0 Branching Fraction and C P Asymmetry

We study B + → π + π 0 π 0 using 711 fb -1 of data collected at the Υ(4S) resonance with the Belle detector at the KEKB asymmetric-energy e + e - collider. Here we measure an inclusive branching fraction of (19.0 ±1.5 ±1.4)×10 -6 and an inclusive CP asymmetry of (9.2 ±6.8 ±0.7)%, where the first uncertainties are statistical and the second are systematic, and a B + → ρ(770) + π 0 branching fraction of (11.2 ± 1.1 ± 0.9 $^{+0.8}_{-1.6}$)× 10 -6 , where the third uncertainty is due to possible interference with B + → ρ(1450) + π 0 . We present the first observation of a structure around 1 GeV/c 2 in the π 0 π 0 mass spectrum, with a significance of 6.4σ, and measure a branching fraction to be (6.9 ±0.9 ±0.6) × 10 -6 . We also report a measurement of local CP asymmetry in this structure.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Modification of χ c 1 ( 3872 ) and ψ ( 2 S ) Production in p Pb Collisions at s NN = 8.16 TeV

The LHCb Collaboration measures production of the exotic hadron χ c 1 ( 3872 ) in proton-nucleus collisions for the first time. Comparison with the charmonium state ψ ( 2 S ) suggests that the exotic χ c 1 ( 3872 ) experiences different dynamics in the nuclear medium than conventional hadrons, and comparison with data from proton-proton collisions indicates that the presence of the nucleus may modify χ c 1 ( 3872 ) production rates. This is the first measurement of the nuclear modification factor of an exotic hadron. © 2024 CERN, for the LHCb Collaboration 2024 CERN

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗