Space Photovoltaic Research and Technology 1982: High Efficiency, Radiation Damage, and Blanket Technology
Space solar cell reseach and development issues are addressed.
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Space solar cell reseach and development issues are addressed.
The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).
The kinetics of formation of the N-blocked dipeptide, N-acetylglycylglycine, from N-acetylglycyl adenylate anhydride and glycine in aqueous solution at 25 C, and at various PH's are reported. The reaction is of interest in that over a physiologically relevant pH range (6-8), peptide synthesis proceeds more rapidly than hydrolysis, even at those pH's at which this compound becomes increasingly susceptible to base-catalyzed hydrolysis. Under similar conditions, the corresponding unblocked aminoacyl adenylate anhydrides are considerably more unstable, and undergo appreciable hydrlysis in the presence of free amino acid. Because N-blocked aminoacyl adenylate anhydrides serve as model compounds of peptidyl adenylate anhydrides, these results suggest that primitive amino acid polymerization systems may have operated by cyclic reactivation of the peptidyl carboxyl group, rather than that of the incoming amino acid.
The use of grazing incidence optics and reflection grating designs is shown to be a method that improves the performance of spectrographs at wavelengths shorter than 1200 A. Emphasis is laid on spectroscopic designs for X ray and EUV astronomy, with sample designs for an objective reflection grating spectrograph (ORGS) and an echelle spectrograph for wavelengths longer than 100 A. Conical diffraction allows operations at grazing incidence in the echelle spectrograph. In ORGS, the extreme distance of X ray objects aids in collimating the source radiation, which encounters conical diffraction within the instrument, proceeds parallel to the optical axis, and arrives at the detector. A series of gratings is used to achieve the effect. A grazing echelle is employed for EUV observations, and offers a resolution of 20,000 over a 300 A bandpass.
This three day conference, sixth in a series that began in 1974, was held at the NASA Lewis Research Center on October 18-20, 1983. The conference provided a forum for the discussion of space photovoltaic systems, their research status, and program goals. Papers were presented and workshops were held in a variety of technology areas, including basic cell research, advanced blanket technology, and radiation damage.
Computer analysis was used to determine the AMO conversion efficiency of single-junction crystalline cells, two-cell and three-cell crystalline tandem structures operating under 100 suns and at 80 C. For optimally designed devices, the calculated efficiencies are 24% for single-junction cells, 33 to 35% for two-cell tandem structures, and 37 to 39% for three-cell tandem structures. Practical efficiencies are expected to be about 15 relative percentage points lower in each case.
Participants expressed more interest in GaAs cells than in Si cells. For silicon cells, the beginning of life efficiency is not a major problem but more research is needed in the end of life efficiency. The beginning of life efficiency of GaAs cells must be brought up to 20% at AMO. More proton damage tests must be conducted. Liquid phase epitaxy technology is current but chemical vapor deposition technology is more flexible. There are no obvious problems in limiting process yields. Technology transfer should occur when market demands are generated.
Computer analysis indicates that a substantial increase in solar cell conversion efficiencies can be achieved by using two-cell, multi-bandgap tandem structures instead of single-junction cells. Practical AM1 efficiencies of about 30 percent at one sun and over 30 percent at multiple suns are to be expected. The further increases in efficiency calculated for a three-cell tandem structure are much smaller and may not justify the added complexity. For inexpensive two-cell tandem modules, Si is preferred for the bottom cell, and the top-cell material should have a bandgap of 1.75 to 1.80 eV. The GaAs-AlAs and GaAs-GaP systems are very attractive candidates for the top cell. Significant advances have been achieved in growing GaAs on Ge-coated Si substrates (for the two-terminal, two-cell structure) and in growing free-standing ultrathin GaAs layers (for the two-terminal or four-terminal structures). These advances should be transferable to the GaAs-AlAs and GaAs-GaP systems.
Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.
The impact of efficiency on the power system and how efficiency is affected by component types is discussed. Some ac and dc bus configurations are described along with prototype systems.
Web base material is being improved with a goal toward obtaining solar cell efficiencies in excess of 18% (AM1). Carrier loss mechanisms in web silicon was investigated, techniques were developed to reduce carrier recombination in the web, and web cells were fabricated using effective surface passivation. The effect of stress on web cell performance was also investigated.
Several of the key parameters describing the heavily doped regions of silicon solar cells are examined. The experimentally determined energy gap narrowing and minority carrier diffusivity and mobility are key factors in the investigation.
A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.
Early silicon solar cells were made of metallurgical-grade silicon with very low efficiency. The single-crystal silicon introduced in the mid-50's increased the efficiency to the 5% to 10% region. Throughout the 1960s the technology of the 2 x 2 cm or 2 x 4 cm space solar cell with 10% efficiency was established. In the early 1970s work related to the violet cell upset the status quo and space solar cells and cells in general became more efficient. The rest of the decade became characterized by establishing a terrestrial photovoltaic technology to support the development of a new industry. Costs per watt became the dominant consideration and frequently the efficiency was compromised. The introduction of materials and other forms of silicon dropped the efficiency and it is now a state of mine that accomplishing 10% efficiency with some alternative combination is regarded as success. Silicon solar cells are capable of delivering efficiences much greater than 10%.
The limitations on sheet growth material in terms of the defect structure and minority carrier lifetime are discussed. The effect of various defects on performance are estimated. Given these limitations designs for a sheet growth cell that will make the best of the material characteristics are proposed. Achievement of optimum synergy between base material quality and device processing variables is proposed. A strong coupling exists between material quality and the variables during crystal growth, and device processing variables. Two objectives are outlined: (1) optimization of the coupling for maximum performance at minimal cost; and (2) decoupling of materials from processing by improvement in base material quality to make it less sensitive to processing variables.
Large area (100 sq cm) polysilicon solar cells having efficiencies of up to 14.1% (100 mW/sq cm, 25 C) were fabricated and a detailed analysis was performed to identify the efficiency loss mechanisms. The 1-5 characteristics of the best cell were dominated by recombination in the quasi-neutral base due to the combination of minority carrier diffusion length and base resistivity. An analysis of the microstructural defects present in the material and their effect on the electrical properties is presented.
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Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.