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At least 919 records · Page 51

SU(3) Topology of Magnon-Phonon Hybridization in 2D Antiferromagnets

Magnon-phonon hybrid excitations are studied theoretically in a two-dimensional antiferromagnet with an easy axis normal to the plane. In this work, we show that two magnon bands and one phonon band are intertwined by the magnetoelastic coupling through a nontrivial SU(3) topology, which can be intuitively perceived by identifying a skyrmion structure in the momentum space. Our results are insensitive to lattice details and generally applicable to two-dimensional antiferromagnets. We show this by developing a continuum theory as the long-wavelength approximation to the tight-binding model. The theoretical results can be probed by measuring the thermal Hall conductance as a function of the temperature and the magnetic field. We envision that the magnetoelastic coupling in antiferromagnets can be a promising venue in search of various topological excitations, which cannot be found in magnetic or elastic models alone.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

The channel conduction in 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (E eƒƒ ) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be E$^{-1.8}_{eƒƒ}$ and E$^{-2.4}_{eƒƒ}$, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of E eƒƒ in controlling the value of channel mobility in 4H-SiC MOSFETs.

36 MATERIALS SCIENCE↗

Anomalous Hall conductivity control in Mn 3⁢ NiN antiperovskite by epitaxial strain along the kagome plane

Antiferromagnetic manganese-based nitride antiperovskites, such as Mn 3 ⁢NiN, hold a triangular frustrated magnetic ordering, thanks to their kagome lattice formed by the Mn atoms along the (111) plane. As such, the magnetic frustration imposes a nontrivial interplay between the symmetric and asymmetric magnetic interactions, which can only reach equilibrium in a noncollinear magnetic configuration. Consequently, the associated electronic interactions and their possible tuning by external constraints, such as applied epitaxial strain, play a crucial role in defining the microscopic and macroscopic properties of such topological condensed matter systems. Here, in this paper, we explored and explained the effect of the epitaxial strain imposed within the (111) plane, in which the magnetic and crystallographic symmetry operations are kept fixed, and only the magnitude of the ionic and electronic interactions are tuned. We found a tangible enhancement in the anomalous Hall conductivity along the (111) plane ($σ^{AHE}_{111}$) for compression values, whereas, for tension, the AHC is dramatically reduced. As such, the $σ^{AHE}_{111}$ component fetches a maximum increase of 26%, with respect to the unstrained structure, for a compression value close to –1.5%. Our findings indicate a distinct correlation between the anomalous Hall conductivity and the Berry curvature along the (111) plane as a function of the strain. Finally, the nondivergent Berry curvature acts as the source and the strain as the control mechanism of this anomalous transport phenomenon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Deformed Fredkin model for the ν = 5 / 2 Moore-Read state on thin cylinders

We propose a frustration-free model for the Moore-Read quantum Hall state on sufficiently thin cylinders with circumferences ≲ 7 magnetic lengths. While the Moore-Read Hamiltonian involves complicated long-range interactions between triplets of electrons in a Landau level, our effective model is a simpler one-dimensional chain of qubits with deformed Fredkin gates. We show that the ground state of the Fredkin model has high overlap with the Moore-Read wave function and accurately reproduces the latter's entanglement properties. Moreover, we demonstrate that the model captures the dynamical response of the Moore-Read state to a geometric quench, induced by suddenly changing the anisotropy of the system. We elucidate the underlying mechanism of the quench dynamics and show that it coincides with the linearized bimetric field theory. The minimal model introduced here can be directly implemented as a first step towards quantum simulation of the Moore-Read state, as we demonstrate by deriving an efficient circuit approximation to the ground state and implementing it on an IBM quantum processor. Published by the American Physical Society 2024

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.

annealing↗

Imaging the Breakdown and Restoration of Topological Protection in Magnetic Topological Insulator MnBi 2 Te 4

Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral 1D edge states. Yet, in magnetic topological insulators to date, topological protection is far from robust, with zero-magnetic field QAH effect only realized at temperatures an order of magnitude below the Néel temperature T N , though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realizing QAH effect at higher temperatures. Here a scanning tunneling microscope is used to directly map the size of exchange gap (E g,ex ) and its spatial fluctuation in the QAH insulator 5-layer MnBi 2 Te 4 . Long-range fluctuations of E g,ex are observed, with values ranging between 0 (gapless) and 70 meV, appearing to be uncorrelated to individual surface point defects. The breakdown of topological protection is directly imaged, showing that the gapless edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless regions in the bulk. Finally, it is unambiguously demonstrated that the gapless regions originate from magnetic disorder, by demonstrating that a small magnetic field restores E g,ex in these regions, explaining the recovery of topological protection in magnetic fields. The results indicate that overcoming magnetic disorder is the key to exploiting the unique properties of QAH insulators.

36 MATERIALS SCIENCE↗

Three-dimensional plasmoid-mediated reconnection and turbulence in Hall magnetohydrodynamics

Plasmoid instability accelerates reconnection in collisional plasmas by transforming a laminar reconnection layer into numerous plasmoids connected by secondary current sheets in two dimensions (2D) and by fostering self-generated turbulent reconnection in three dimensions (3D). In large-scale astrophysical and space systems, plasmoid instability likely initiates in the collisional regime but may transition into the collisionless regime as the fragmentation of the current sheet progresses toward kinetic scales. Hall magnetohydrodynamics (MHD) models are widely regarded as a simplified yet effective representation of the transition from collisional to collisionless reconnection. However, plasmoid instability in 2D Hall MHD simulations often leads to a single-X-line reconnection configuration, which significantly differs from fully kinetic particle-in-cell simulation results. This study shows that single-X-line reconnection is less likely to occur in 3D compared to 2D. Moreover, depending on the Lundquist number and the ratio between the system size and the kinetic scale, Hall MHD can also realize 3D self-generated turbulent reconnection. We analyze the features of the self-generated turbulent state, including the energy power spectra and the scale dependence of turbulent eddy anisotropy.

Physics↗

The role of specimen size and grain boundary characteristics in the yield strength of tungsten in microtensile tests

To effectively use the measured properties from small-scale tensile tests for bulk material performance predictions, it is essential to understand the threshold of specimen size-effect strengthening and the interaction between dislocations and microstructures within miniaturized specimens. This study uses pure tungsten to investigate the size effect in terms of specimen size, grain size, and grain boundary characteristics relative to the yield strength of tungsten at room temperature. We evaluate the transition from miniaturized specimen properties to bulk properties and the deformation behavior through small-scale tensile tests of three specimen sizes (large: 80 × 100 × 233 µm³; medium: 7 × 7 × 18 µm³; and small: 2 × 2 × 5 µm³). The testing results reveal that the small and medium specimens exhibit high yield strength with ductile behavior, while the large specimens exhibit brittle failure, consistent with the room temperature strength of tungsten, indicating bulk behavior. We further explore the specimen size-effect sensitivity to yield stress and the scaling relationship between yield strength and the number of grains involved in the deformation. A power-law relationship with the exponent value of approximately -0.5 was found in the yield strength–grain number scaling, implying the Hall-Petch like behavior. A minimum of 7–17 effective grain boundaries across the tensile gauge dimension is required to accurately measure bulk properties.

36 - MATERIALS SCIENCE↗

Large exotic spin torques in antiferromagnetic iron rhodium.

Spin torque is a promising tool for driving magnetization dynamics for computing technologies. These torques can be easily produced by spin-orbit effects, but for most conventional spin source materials, a high degree of crystal symmetry limits the geometry of the spin torques produced. Magnetic ordering is one way to reduce the symmetry of a material and allow exotic torques, and antiferromagnets are particularly promising because they are robust against external fields. We present spin torque ferromagnetic resonance (ST-FMR) measurements and second harmonic Hall measurements characterizing the spin torques in anti -ferromagnetic iron rhodium alloy. We report extremely large, strongly temperature-dependent exotic spin torques with a geometry apparently defined by the magnetic ordering direction. We find the spin torque efficiency of iron rhodium to be (207 +/- 94)% at 170 K and (88 +/- 32)% at room temperature. We support our conclusions with theoretical calculations showing how the antiferromagnetic ordering in iron rhodium gives rise to such exotic torques.

Gibbons, Jonathan↗

A combined experimental and crystal plasticity study of grain size effects in magnesium alloys

This work presents a method to incorporate the micro Hall-Petch equation into the crystal plasticity finite element (CPFE) framework accounting for the microstructural features to understand the coupling between grain size, texture, and loading direction in magnesium alloys. The effect of grain size and texture is accounted for by modifying the slip resistances of individual basal and prismatic systems based on the micro Hall-Petch equation. The modification based on the micro Hall-Petch equation endows every slip system at each microstructural point with a slip system-level grain size and maximum compatibility factor, which are in turn used to modify the slip resistance. While the slip-system level grain size is a measure of the grain size, the maximum compatibility factor encodes the effect of the grain boundary on the slip system resistance modification and is computed based on the Luster-Morris factor. The model is calibrated using experimental stress-strain curves of Mg-4Al samples with three different grain sizes from which the Hall-Petch coefficients are extracted and compared with Hall-Petch coefficients predicted using original parameters from previous work. The predictability of the model is then evaluated for a Mg-4Al sample with different texture and three grain sizes subjected to loading in different directions. The calibrated parameters are then used for some parametric studies to investigate the variation of Hall-Petch slope for different degrees of simulated spread in basal texture, variation of Hall-Petch slope with loading direction relative to basal poles for a microstructure with strong basal texture, and variation of yield strength with change in grain morphology. The proposed approach to incorporate the micro Hall-Petch equation into the CPFE framework provides a foundation to quantitatively model more complicated scenarios of coupling between grain size, texture and loading direction in the plasticity of Mg alloys.

Crystal plasticity↗

Chiral hydrodynamics in strong external magnetic fields

We construct the general hydrodynamic description of (3+1)-dimensional chiral charged (quantum) fluids subject to a strong external magnetic field with effective field theory methods. We determine the constitutive equations for the energy-momentum tensor and the axial charge current, in part from a generating functional. Furthermore, we derive the Kubo formulas which relate two-point functions of the energy-momentum tensor and charge current to 27 transport coefficients: 8 independent thermodynamic, 4 independent non-dissipative hydrodynamic, and 10 independent dissipative hydrodynamic transport coefficients. Five Onsager relations render 5 more transport coefficients dependent. We uncover four novel transport effects, which are encoded in what we call the shear-induced conductivity, the two expansion-induced longitudinal conductivities and the shear-induced Hall conductivity. Remarkably, the shear-induced Hall conductivity constitutes a novel non-dissipative transport effect. As a demonstration, we compute all transport coefficients explicitly in a strongly coupled quantum fluid via holography.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Studies of a modulated Hall thruster

A typical Hall thruster is powered from a DC power supply and operates with a constant discharge voltage. In operation, the discharge current is subject to strong low frequency oscillations (so-called breathing oscillations). Recent studies have shown that not only can these breathing oscillations be correlated with improved performance, but these oscillations can be induced and controlled by modulating the anode voltage. In this work, a systematic experimental study of the plasma flow in a modulated cylindrical Hall thruster was performed to characterize the effect of natural and modulated breathing oscillations on thruster performance. Measurements suggest that modulating the anode voltage in resonance with the natural breathing frequency does increase the thrust, but a corresponding phase alignment of discharge current and discharge voltage causes the efficiency gains to be insignificant. In addition, the outward shift of the acceleration region causes the plasma plume divergence to increase at the resonance condition and thereby, limit the thrust increase. Further, mechanisms underlying the relative phase between discharge current, ion current, and discharge voltage are investigated experimentally and corroborated with one-dimensional hybrid simulations of the thruster discharge.

modelling↗

Neutral excitations of quantum Hall states: A density matrix renormalization group study

We use the dynamical structure factors of the quantum Hall states at ν = 1 / 3 and 1 / 2 in the lowest Landau level to study their excitation spectrum. Using the density matrix renormalization group in combination with the time-dependent variational principle on an infinite cylinder geometry, we extract the low-energy properties. At ν = 1 / 3 , a sharp magnetoroton mode and the two-roton continuum are present and the finite-size effects can be understood using the fractional charge of the quasiparticle. At ν = 1 / 2 , we find low-energy modes with linear dispersion and the static structure factor s ¯ ( q ) ~ ( q ℓ ) 3 in the limit q ℓ → 0 . The properties of these modes agree quantitatively with the predictions of the composite-fermion theory placed on the infinite cylinder.

36 MATERIALS SCIENCE↗

Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data

The semiconductor minority carrier lifetime contains information about several important material properties, including Shockley–Read–Hall defect levels/concentrations and radiative/Auger recombination rates, and the complex relationships between these parameters produce a non-trivial temperature-dependence of the measured lifetime. It is tempting to fit temperature-dependent lifetime data to extract the properties of the Shockley–Read–Hall recombination centers; however, without a priori knowledge of the distribution of the Shockley–Read–Hall states across the bandgap, this fit problem is under-constrained in most circumstances. Shockley–Read–Hall lifetime data are not well-suited for the extraction of Shockley–Read–Hall defect levels but can be used effectively to extract minority carrier recombination lifetimes. The minority carrier recombination lifetime is observed at temperatures below 100 K in a Si-doped n-type InGaAs/InAsSb superlattice, and deviation from its expected temperature-dependence indicates that the capture cross section of the defect associated with Si-doping has an activation energy of 1.5 meV or a characteristic temperature of 17 K. This lower temperature regime is also preferrable for the analysis of the physics of defect introduction with displacement-damage-generating particle irradiation.

Physics↗

Skyrmionium dynamics and stability on one dimensional anisotropy patterns

We examine a skyrmionium driven over a periodic anisotropy pattern, which consists of disorder free regions and disordered regions. For small defect densities, the skyrmionium flows for an extended range of currents, and there is a critical current above which it transforms into a skyrmion. For increased amounts of quenched disorder, the current needed for the skyrmionium to transform into a skyrmion decreases, and there is a critical disorder density above which a moving skyrmionium is not stable. In the moving state, the skyrmionium to skyrmion transformation leads to a drop in the velocity and the onset of a finite skyrmion Hall angle. We also find a reentrance effect in which the pinned skyrmionium transforms into a skyrmion just above depinning, restabilizes into skyrmionium at larger drives, and becomes unstable again at large currents. In conclusion, we also show that adding a transverse shaking drive can increase the lifetime of a moving skyrmionium by reducing the effect of the pinning in the direction of the drive.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Slow Quasiparticle Dynamics and Anyonic Statistics in a Fractional Quantum Hall Fabry-Pérot Interferometer

Anyons are two-dimensional particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, their exchange statistics can be measured in the edge-state Fabry-Pérot interferometer, wherein the presence of 𝑁 𝑞⁢𝑝 localized anyons contributes a phase 𝑁 𝑞⁢𝑝⁢ 𝜃 𝑎 to the interference pattern where 𝜃 𝑎 is twice the exchange phase. Here we report the observation of large, hysteretic phase jumps in a monolayer graphene Fabry-Pérot interferometer at 𝜈 = 1/3. When the filling factor is increased from 𝜈 < 1/3 toward the center of the plateau, we observe phase slips with magnitude Δ⁢𝜃 ≈ 2⁢𝜋/3, consistent with the addition of individual quasiparticles to the interferometer bulk. These phase slips occur as instantaneous jumps in the interference signal, with intervals between the jumps indicating quasiparticle equilibration times exceeding 20 min. We use this long timescale to investigate the effect of changes in interferometer area 𝐴 𝐼 and 𝑁 𝑞⁢𝑝 independently at fixed magnetic field, revealing a striking memory effect in the phase slip magnitude. In particular, as the 𝜈 =1/3 plateau is approached from higher filling, we observed phase slips with Δ⁢𝜃 significantly larger than 2⁢𝜋/3 over the same range of gate voltage where quantized jumps are seen for increasing 𝜈. We discuss this asymmetry in terms of bulk-edge coupling of quasiparticles localized near the edge or in the bulk, and argue that this effect can be qualitatively reconciled with theoretical expectations for strongly interacting quasiparticles in the presence of weak disorder and strongly nonequilibrium charge dynamics. Besides providing a replication of interferometric measurements sensitive to 𝜃 𝑎 , our results highlight the key role played by charge dynamics on signatures of the anyon phase, and demonstrate that fractional quasiparticles can be indefinitely localized in nonequilibrium configurations.

anyons↗

Hetero-Orbital Two-Component Fractional Quantum Hall States in Bilayer Graphene

A two-dimensional electron system exposed to a strong magnetic field produces a plethora of strongly interacting fractional quantum Hall (FQH) states, the complex topological orders of which are revealed through exotic emergent particles, such as composite fermions, and fractionally charged Abelian and non-Abelian anyons. Much insight has been gained by the study of multicomponent FQH states, where spin and pseudospin indices of the electron contribute additional correlation. Traditional multicomponent FQH states develop in situations where the components share the same orbital states and the resulting interactions are pseudospin independent; this homo-orbital nature is also crucial to their theoretical understanding. Here, we study “hetero-orbital” two-component FQH states, in which the orbital index is part of the pseudospin, rendering the multicomponent interactions strongly SU(2) anisotropic in the pseudospin space. Such states, obtained in bilayer graphene at the isospin transition between 𝑁 = 0 and 𝑁 = 1 electron Landau levels, are markedly different from previous homo-orbital two-component FQH states. In particular, we observe strikingly different behaviors for the parallel-vortex and reverse-vortex attachment composite fermion states, and an anomalously strong two-component 2/5 state over a wide range of magnetic field before it abruptly disappears at a high field. Our findings, combined with detailed theoretical calculations, reveal the surprising robustness of the hetero-orbital FQH effects, significantly enriching our understanding of FQH physics in this novel regime.

Bilayer graphene↗