A crustal-upper-mantle model for the Colorado plateau based on observations of crystalline rock fragments in the Moses Rock dike.
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Optimum solidification parameters for the production of highly perfect copper crystals by Czochralski growth are sought along with the documentation of crystal imperfections under various growth conditions. X-ray techniques which do not in their application produce defects and which allow the characterization of imperfections in single crystals are chosen to assess crystal perfection. The X-ray techniques employed ranged from ordinary Laue photography through Borrmann topography to double-crystal scanning diffractometry, thus allowing crystals with a wide variation in perfection to be studied. As a set of controllable solidification parameters, the rotation of the seed and of the melt and the diameter of the bottleneck are chosen. X-ray diffraction topographs are analyzed along with the data obtained from rocking curve measurements. Tables of growth conditions and quantitative data of rocking curve widths are presented.
Cosmic ray track densities in two mare basalts 15058 and 15555 are multivalued at each depth from the surface, and numerous indications of shock are present, suggesting that shock has lowered track densities in some crystals but not in others. From the minimum track densities, the maximum time since the last shock event is derived for each rock. In separate observations 15017, a black glass, has a surface age of about 14,000 years derived from impact pits, but because of low track retentivity a solar flare record of only 1 year.
An anhysteretic remanent magnetization method described by Banerjee and Mellema (1974) is used in the lunar paleointensity studies reported. The range of the difference in the paleointensity values obtained by the new method is not quite as great as the range of differences ordinarily found in values determined with the conventional method reported by Thellier and Thellier (1959). The results of the investigation show that the three Apollo 15 rocks studied acquired their natural remanent magnetization in a finite-sized magnetic field which was two or three orders of magnitude greater than the present ambient interplanetary field at the moon.
A literature survey is presented covering nondestructive methods of electrical characterization of semiconductors. A synopsis of each technique deals with the applicability of the techniques to various device parameters and to potential in-flight use before, during, and after growth experiments on space flights. It is concluded that the very recent surge in the commercial production of large scale integrated circuitry and other semiconductor arrays requiring uniformity on the scale of a few microns, involves nondestructive test procedures which could well be useful to NASA for in-flight use in space processing.
A selective bibliography is given on electrical characterization techniques for semiconductors. Emphasis is placed on noncontacting techniques for the standard electrical parameters for monitoring crystal growth in space, preferably in real time with high resolution.
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The nucleation of small monolayer ice-like clusters at the basal and prism ice-vapor interfaces is considered. It is found that the basal surfaces prefer triangular embryos with an orientation that reverses from layer to layer, whereas the most stable clusters on the prism surfaces are rectangular in configuration. At any given saturation ratio, the preferred prism clusters are found to have a critical energy of formation significantly lower than that of the basal clusters, basically because of differences in cluster corner free energies.
The results of a systematic series of experiments to uncover possible correlation between laser-induced stimulated-Brillouin-scattering (SBS) phonons and damage in quartz are presented. Such correlation is confirmed and the various thresholds are established. The anomalous transmission factor under phonon generation is found to decay exponentially as predicted with increasing incident laser power. The LF SBS phonon is also demonstrated to be a sensitive probe for precatastrophic damage.
The described sensor has been used to measure small temperature changes in investigations related to the study of the properties of superfluid helium under zero-gravity conditions. The sensor requirements included high sensitivity, rapid response, small size, reproducibility, and ease of application to a test surface. In the preparation of the sensor a thin film of a commercially available carbon colloidal suspension is deposited on a substrate which must be electrically insulated or be covered with an insulating layer.
Equations assuming a Jahn-Teller type effect for the d band electrons in V3Si compounds are given, and the results of free-energy change calculations by using some approximations based on these equations are depicted. The tetragonal structure is converted to cubic as the temperature rises past T sub m which is calculated as 13 K. by the Batterman-Barrett method and is measured to be 20-5 K. Other parameters such as change of C sub p with temperature are predicted better.
Close examination of the interaction of the energetic knock-on atoms with the local lattice environment reveals a damage mechanism which does satisfy the experimental data on proton irradiation of silicon. A proton-atom interaction with high energy transfer is considered where the proton path is delineated by a trail of ionization, and the silicon ion path is characterized by much heavier ionization terminating in a dense displacement cluster. At collision, many of the silicon electrons are stripped off, and the resulting energetic ion subsequently loses energy rapidly by Coulomb interaction with bound electrons. The rate of energy loss depends on the charge state and velocity of the knock-on ion. For ion energies in excess of 1 MeV, the intensity of ionization is sufficient to permit lattice atoms, stripped of their binding electrons, to reorient randomly before having an opportunity to recombine with electrons and re-establish the lattice. The path of a knock-on ion thus becomes a thin cylinder of amorphous material within the crystal. Amorphous silicon has a Fermi level closer to mid-band than does single crystal silicon, and a strong field therefore, results around this damaged region. The field produces a large depletion region, representing a very large capture cross section for minority carriers.
In V3Si, the V atoms form an array of dense linear chains; a tight-binding approximation in one dimension was used to describe the d electrons. The electronic energy calculated by this method was reduced when the lattice is deformed. This lead to a band type of the Jahn Teller effect, which may explain the cubic to tetragonal transition which was observed at low temperatures. The theory can be extended to other superconductors of the V3X type when X=Ga, Ge, Sn, etcetera, or NB3SN.
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Data acquisition and evaluation, basement geologic provinces, basement ages and tectonic provinces, configuration of the basement surface, and various abstracts and preprints are provided.