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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 919 records · Page 51
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Hanle measurements of electrodeposited Fe/GaAs spin tunnel contacts

We report spin transport in electrodeposited Fe/n-GaAs tunnel diodes via three-terminal Hanle measurements. For temperatures between 20 K and 150 K, the spin resistance was up to 20 times higher than expected from theoretical calculations and 1000 times larger compared to a vacuum-deposited counterpart. This higher spin resistance was correlated with a higher contact resistance, and a higher concentration of oxygen impurities in the electrodeposited Fe film and interface, as detected via x-ray photoelectron and Auger spectroscopies, and inferred from Fe film nucleation rates. These results can be explained via a small effective tunnel-contact area of 5%, but extra spin filtering via interfacial states or magnetic oxide layers cannot be ruled out. The spin diffusion times (8.5 ± 0.4 ns to 1.8 ± 0.4 ns, for 20 K to 150 K) extracted from Lorentzian fits were in good agreement with values obtained from earlier 4-terminal Hanle measurements (7.8 ± 0.4 ns to 3.2 ± 0.4 ns, for 25 K to 77 K), both 10 times slower than reported vacuum-deposited contacts.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Schottky contacts to In{sub 2}O{sub 3}

n-type binary compound semiconductors such as InN, InAs, or In{sub 2}O{sub 3} are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In{sub 2}O{sub 3} and discuss temperature-dependent current-voltage characteristics of Pt/In{sub 2}O{sub 3} in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10{sup -5} Ω·cm{sup 2} was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni{sub 3}Si to Ni{sub 2}Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High-Q contacted ring microcavities with scatterer-avoiding “wiggler” Bloch wave supermode fields

High-Q ring resonators with contacts to the waveguide core provide a versatile platform for various applications in chip-scale optomechanics, thermo-, and electro-optics. We propose and demonstrate azimuthally periodic contacted ring resonators based on multi-mode Bloch matching that support contacts on both the inner and outer radius edges with small degradation to the optical quality factor (Q). Radiative coupling between degenerate modes of adjacent radial spatial order leads to imaginary frequency (Q) splitting and a scatterer avoiding high-Q “wiggler” supermode field. We experimentally measure Qs up to 258 000 in devices fabricated in a silicon device layer on buried oxide undercladding and up to 139 000 in devices fully suspended in air using an undercut step. Wiggler supermodes are true modes of the microphotonic system that offer additional degrees of freedom in electrical, thermal, and mechanical design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

The features of ballistic electron transport in a suspended quantum point contact

A suspended quantum point contact and the effects of the suspension are investigated by performing identical electrical measurements on the same experimental sample before and after the suspension. In both cases, the sample demonstrates conductance quantization. However, the suspended quantum point contact shows certain features not observed before the suspension, namely, plateaus at the conductance values being non-integer multiples of the conductance quantum, including the “0.7-anomaly.” These features can be attributed to the strengthening of electron-electron interaction because of the electric field confinement within the suspended membrane. Thus, the suspended quantum point contact represents a one-dimensional system with strong electron-electron interaction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Method for characterizing the contact resistance of metal-vanadium dioxide thin film interfaces

The standard method for determining the contact resistance of planar metal-semiconductor interfaces can underestimate the true contact resistance under normal operating conditions, as it relies on the resistivity of the semiconductor material remaining constant during measurement. However, the strong temperature dependence of the resistivity of VO{sub 2} requires a modified approach that maintains a constant power density dissipated within the film to account for Joule heating. We develop a method for measuring contact resistance in semiconductors with a high thermal coefficient of resistivity, demonstrate this method with an example, and compare the results with the standard technique.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique

Electrical properties of Schottky contacts on n-type GaN grown in nitrogen rich atmosphere with different N/Ga ratios by hydride vapor phase epitaxy were investigated. We show that tunneling of electrons from the conduction band of GaN to the metal is dominant in our samples. The quality of Schottky contacts does not only depend on surface preparation but also on the growth conditions of the crystals. Schottky contacts on these crystals show an increasing deterioration when higher N/Ga growth ratios are used. We correlate our results with the presence of negatively charged gallium vacancies in the samples. These charges compensate the positively charged donors and lead to a significant increase in series resistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

The significant effect of the thickness of Ni film on the performance of the Ohmic contact of Ni/Au to p-GaN is studied. The Ni/Au metal films with thickness of 15/50 nm on p-GaN led to better electrical characteristics, showing a lower specific contact resistivity after annealing in the presence of oxygen. Both the formation of a NiO layer and the evolution of metal structure on the sample surface and at the interface with p-GaN were checked by transmission electron microscopy and energy-dispersive x-ray spectroscopy. The experimental results indicate that a too thin Ni film cannot form enough NiO to decrease the barrier height and get Ohmic contact to p-GaN, while a too thick Ni film will transform into too thick NiO cover on the sample surface and thus will also deteriorate the electrical conductivity of sample.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Quantification of thermal and contact resistances of scanning thermal probes

Scanning thermal probes are widely used for imaging temperature fields with nanoscale resolution, for studying near-field radiative heat transport and for locally heating samples. In all these applications, it is critical to know the thermal resistance to heat flow within the probe and the thermal contact resistance between the probe and the sample. Here, we present an approach for quantifying the aforementioned thermal resistances using picowatt resolution heat flow calorimeters. The measured contact resistance is found to be in good agreement with classical predictions for thermal contact resistance. The techniques developed here are critical for quantitatively probing heat flows at the nanoscale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Study of barrier height and trap centers of Au/n-Hg{sub 3}In{sub 2}Te{sub 6} Schottky contacts by current-voltage (I-V) characteristics and deep level transient spectroscopy

The temperature-dependent electrical characteristics of the Au/n-Hg{sub 3}In{sub 2}Te{sub 6} Schottky contact have been studied at the temperature range of 140 K–315 K. Based on the thermionic emission theory, the ideality factor and Schottky barrier height were calculated to decrease and increase from 3.18 to 1.88 and 0.39 eV to 0.5 eV, respectively, when the temperature rose from 140 K to 315 K. This behavior was interpreted by the lateral inhomogeneities of Schottky barrier height at the interface of Au/n-Hg{sub 3}In{sub 2}Te{sub 6} contact, which was shown by the plot of zero-bias barrier heights Φ{sub bo} versus q/2kT. Meanwhile, it was found that the Schottky barrier height with a Gaussian distribution was 0.67 eV and the standard deviation σ{sub 0} was about 0.092 eV, indicating that the uneven distribution of barrier height at the interface region. In addition, the mean value of Φ{sup ¯}{sub b0} and modified Richardson constant was determined to be 0.723 eV and 62.8 A/cm{sup 2}K{sup 2} from the slope and intercept of the ln(I{sub o}/T{sup 2}) – (qσ{sub 0}{sup 2}/2k{sup 2}T{sup 2}) versus q/kT plot, respectively. Finally, two electron trap centers were observed at the interface of Au/n-Hg{sub 3}In{sub 2}Te{sub 6} Schottky contact by means of deep level transient spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Space charge distributions in insulating polymers: A new non-contacting way of measurement

A new technique for the determination of space charge profiles in insulating polymers is proposed. Based on the evolution of an existing thermal wave technique called Focused Laser Intensity Modulation Method ((F)LIMM), it allows non-contact measurements on thin films exhibiting an internal charge to be studied. An electrostatic model taking into account the new sample-cell geometry proposed was first developed. It has been shown, in particular, that it was theoretically possible to calculate the internal charge from experimental measurements while allowing an evaluation of the air layer appearing between the sample and the electrode when non-contact measurements are performed. These predictions were confirmed by an experimental implementation for two thin polymer samples (25 μm-polyvinylidenefluoride and 50 μm-polytetrafluoroethylene (PTFE)) used as tests. In these cases, minimum air-layer thickness was determined with an accuracy of 3% and 20%, respectively, depending on the signal-to-noise ratio during the experimental procedure. In order to illustrate the reachable possibilities of this technique, 2D and 3D cartographies of a negative space charge implanted by electron beam within the PTFE test sample were depicted: like in conventional (F)LIMM, a multidimensional representation of a selectively implanted charge remains possible at a few microns depth, but using a non-contacting way of measurement.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Rectification and tunneling effects enabled by Al{sub 2}O{sub 3} atomic layer deposited on back contact of CdTe solar cells

Atomic layer deposition (ALD) of Aluminum oxide (Al{sub 2}O{sub 3}) is employed to optimize the back contact of thin film CdTe solar cells. Al{sub 2}O{sub 3} layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al{sub 2}O{sub 3} deposition, compared with the efficiency of 10.7% without Al{sub 2}O{sub 3} modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al{sub 2}O{sub 3} maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al{sub 2}O{sub 3} modification layer features a desired low-density of interface state of 8 × 10{sup 10 }cm{sup −2} by estimation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Simultaneous shunt protection and back contact formation for CdTe solar cells with single wall carbon nanotube layers

Thin film photovoltaic (PV) devices and modules prepared by commercial processes can be severely compromised by through-device low resistance electrical pathways. The defects can be due to thin or missing semiconductor material, metal diffusion along grain boundaries, or areas containing diodes with low turn-on potentials. We report the use of single wall carbon nanotube (SWCNT) layers to enable both protection against these defects and back contact formation for CdTe PV devices. Samples prepared with a SWCNT back contact exhibited good efficiency and did not require shunt protection, while devices prepared without shunt protection using a standard metal back contact performed poorly. We describe the mechanism by which the SWCNT layer functions. In addition to avoiding the need for shunt protection by other means, the SWCNT film also provides a route to higher short circuit currents.

14 SOLAR ENERGY↗
DOE OSTI2016

Determination of the solid surface critical exponent β{sub 1} from contact-angle variation on approach to a wetting transition: Cyclohexane/aniline/quartz

The three-phase contact angle (θ) for the system cyclohexane/aniline/quartz has been measured from drop shapes as a function of temperature on approach to the cyclohexane/aniline upper consolute solution temperature T{sub c}. The experiments employed exacting criteria previously established for thermodynamic-quality measurements at fluid interfaces. A first-order wetting transition from partial wetting to complete wetting was observed at a temperature T{sub w}, 2.12 K below T{sub c}. The contact angle vanishes at T{sub w}, scaling as cos θ ∼ |T − T{sub c}|{sup β{sub 1}−μ} for T < T{sub w} and cos θ = 1.0 for T{sub w} < T < T{sub c}. The experimental results give a value for β{sub 1} = 0.74 ± 0.03, in agreement with theoretical calculations. The data clearly rule out higher order contributions to the change in the contact angle near the critical point for this system. These results are in marked contrast to previous measurements on this system from measurements of capillary rise and meniscus curvature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗