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Service train follows group of mining machines, paying out utility lines as machines progress into coal face. Service train for four mining machines removes gases and coal and provides water and electricity. Flexible, coiling armored carriers protect cables and hoses. High coal production attained by arraying row of machines across face, working side by side.
The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.
The unique layer-stacking in two-dimensional (2D) van der Waals materials facilitates the formation of nearly degenerate phases of matter and opens novel routes for the design of low-power, reconfigurable functional materials. Electrochemical ion intercalation between stacked layers offers a promising approach to stabilize bulk metastable phases and to explore the effects of extreme carrier doping and strain. However, in situ characterization methods to study the structural evolution and dynamical functional properties of these intercalated materials remains limited. Here a novel experimental platform is presented capable of simultaneously performing electrochemical lithium-ion intercalation and multimodal ultrafast characterization of the lattice using both electron diffraction and nonlinear optical techniques. Using the layered semimetal WTe 2 as a model system, the interlayer shear phonon mode that modulates stacking between 2Dlayers is probed, showing that small amounts of lithiation enhance the amplitude and lifetime of the phonon, contrary to expectations. This results from the dynamically fluctuating and anharmonic structure between nearly degenerate phases at room temperature, which can be stabilized by electronic carriers accompanying the inserted lithium ions. At high lithiation, the T d ’ structure emerges and quenches the phonon response. This work defines new approaches for using electrochemistry to engineer the dynamic structure of 2D materials.
In the continuously growing field of correlated electronic molecular crystals, there is significant interest in addressing alkali-metal-intercalated aromatic hydrocarbons, in which the possibility of high-temperature superconductivity emerges. However, searching for superconducting aromatic molecular crystals remains elusive due to their small shielding fraction volume. To exploit this potential, a design principle for percolation networks of technologically important film geometry is indispensable. Here the effect of potassium-intercalation is shown on the percolation network in self-assembled aromatic molecular crystals. It is demonstrated that one-dimensional (1D) dipole pairs, induced by dipole interaction, regulate the conductivity, as well as the electronic and optical transitions, in alkalimetal-intercalated molecular electronic crystals. A solid-solution growth methodology of aromatic molecular films with a broad range of stability is developed to uncover electronic and optical transitions of technological importance. The light-induced electron interactions enhance the charge-carrier itinerancy, leading to a switchable metal-to-insulator transition. This discovery opens a route for the development of aromatic molecular electronic solids and long-term modulation of electronic efficacy in nano-technologically important thin films.
Controlling the effects of photoexcited polarons in transition metal oxides can enable the long time-scale charge separation necessary for renewable energy applications and controlling new quantum phases through dynamically tunable electron–phonon coupling. In previously studied transition metal oxides, polaron formation is facilitated by a photoexcited ligand-to-metal charge transfer (LMCT). When the polaron is formed, oxygen atoms move away from iron centers, which increases carrier localization at the metal center and decreases charge hopping. Studies of yttrium iron garnet and erbium iron oxide have suggested that strong electron and spin correlations can modulate photoexcited polaron formation. To understand the interplay between strong spin and electronic correlations in highly polar materials, we studied gadolinium iron oxide (GdFeO 3 ), which selectively forms photoexcited polarons through an Fe–O–Fe superexchange interaction. Excitation-wavelength-dependent transient extreme ultraviolet (XUV) spectroscopy selectively excites LMCT and metal-to-metal charge transfer (MMCT) transitions. Here, the LMCT transition suppresses photoexcited polaron formation due to the balance between superexchange and Hubbard interactions, while MMCT transitions result in photoexcited polaron formation within 250 ± 40 fs. Ab initio theory demonstrates that electron and hole polarons localize on iron centers following MMCT. In addition to understanding how strong electronic and spin correlations can control strong electron–phonon coupling, these experiments separately measure electron and hole polaron interactions on neighboring metal centers for the first time, providing insight into a large range of charge-transfer and Mott–Hubbard insulators.
The NASA/GSFC Shuttle Small Payloads Projects Office (SSPPO) has been studying the feasibility of migrating Hitchhiker customers past present and future to the International Space Station via a "Hitchhiker like" carrier system. SSPPO has been tasked to make the most use of existing hardware and software systems and infrastructure in its study of an ISS based carrier system. This paper summarizes the results of the SSPPO Hitchhiker on International Space Station (ISS) study. Included are a number of "Hitchhiker like" carrier system concepts that take advantage of the various ISS attached payload accommodation sites. Emphasis will be given to a HH concept that attaches to the Japanese Experiment Module - Exposed Facility (JEM-EF).
The Rashba spin-orbit interaction effective field is always in the plane of the two-dimensional electron gas and perpendicular to the carrier wavevector but the direction of the Dresselhaus field depends on the crystal orientation. These two spin-orbit interaction parameters can be determined separately by measuring and analyzing the Shubnikov-de Haas oscillations for various crystal directions. In the InAs quantum well system investigated, the Dresselhaus term is just 5% of the Rashba term. The gate dependence of the oscillation patterns clearly shows that only the Rashba term is modulated by an external electric field.
We investigate the mechanism of a switchable diode behavior observed in ferroelectric SrRuO{sub 3}/BiFeO{sub 3} (BFO)/SrRuO{sub 3} capacitors. We experimentally demonstrate that the switchable diode effect observed in the capacitors is induced by the polarization reversal in the BFO film. The conductivity in an Ohmic region in different oxidation states provides direct evidence that electron hole acts as the majority carrier, delivering p-type conduction. Density functional theory (DFT) calculations show that the p-type conduction arises from an unoccupied gap state of Fe{sup 4+} in an FeO{sub 5} pyramid which is derived from Bi vacancy. Our experimental and DFT study leads to the conclusion that the switchable diode effect originates from an asymmetric band bending in the top and bottom depletion layers modulated by ferroelectric polarization and oxygen vacancies.
The bottom-up construction of electronics from colloidal quantum dots (CQDs) could innovate nanotechnology manufacturing through printing. However, the unstable and expensive semiconductive CQD inks make the scaling up of CQD electronics challenging. Here, in this study, we develop a strategy for engineering the solution chemistry of lead sulfide (PbS) CQD inks prepared from a low-cost direct synthesis method. By creating an iodine-rich environment in weakly coordinating solvents, we convert the iodoplumbates into functional anions, which condense into a robust surface shell. The fully charged electrostatic surface layer prevents aggregation and epitaxial fusion of CQDs, yielding stable inks. By eliminating the fusion-induced inter-band states, we print a compact CQD film with uniformity in three dimensions, flattened energy landscape and improved carrier transport. We achieved a certified efficiency of 13.40% on 0.04 cm 2 cells, with a 300-fold increase in active area, scaling up to a 12.60 cm 2 module with a certified efficiency of 10%.
The intrinsic charge response and hysteresis characteristic in the perovskite solar cell has been investigated by an electrically modulated transient photocurrent technology. An ultraslow charge response process in the timescale of seconds is observed, which can be well explained by the ion migration in the perovskite CH{sub 3}NH{sub 3}PbI{sub 3} film driven by multiple electric fields derived from the heterojunction depletion charge, the external modulation, and the accumulated ion charge. Furthermore, theoretical calculation of charge transport reveals that the hysteresis behavior is also significantly influenced by the interfacial charge extraction velocity and the carrier transport properties inside the cell.
Industrially-relevant catalytic reactions rarely consist of a simple sequence of elementary steps. Moreover, kinetic coupling of multiple reactions on a catalyst surface is highly desired for process intensification and improved energy efficiency for large scale chemical transformations. The shifting landscape of hydrocarbon chemical feedstocks in the US also motivates research on the selective conversion of more complex molecules. One desirable type of catalytic reaction is the reduction of carboxylic acids that are produced from biomass feedstocks to their corresponding alcohols. The proposed research explores the fundamental importance of hydrogen spillover on a multifunctional catalyst for carboxylic acid reduction with H 2 composed of metal particles coupled to metal oxide particles. Recent work has demonstrated the excellent performance of supported tungsten oxide clusters for carboxylic acid reduction, but only after they are promoted with a late transition metal such as palladium. Elucidating the active state of the catalyst and the associated reaction mechanism for acid reduction on that active state are the overall goals of the proposed project and successful completion will enable future design of efficient multifunctional catalysts. The critically important role of the metal promoter is hypothesized to be its ability to dissociate H2 and spillover atomic H to the support. Although hydrogen spillover is a well-recognized phenomenon in catalysis, its role in both catalyst activation and catalytic turnover are still unresolved. The study combined materials synthesis, characterization, reactivity testing, and molecular simulations, to explore the effect of hydrogen chemical potential on the formation of the active catalytic sites and on the steady state catalytic reduction of carboxylic acid. Varying the hydrogen chemical potential through modification of the gas conditions, support composition, and metal loading to modulated the structure and catalytic performance of the reducible metal oxide. Dual function catalysts containing supported Pd and WO x species co-located on a non-reducible carrier (silica) and a reducible carrier (titania) were synthesized and characterized by electron microscopy, temperature-programmed reduction, and chemisorption. Spectroscopic methods such as X-ray absorption and UV-vis were also used to evaluate the catalysts, which were used in the reduction of propionic acid to aldehyde and alcohol. Quantum chemical calculations, including ab initio phase diagrams provided molecular insights into the H spillover phenomenon.
Advanced baseband and microwave switching techniques for large domestic communications satellites operating in the 30/20 GHz frequency bands are discussed. The nominal baseband processor throughput is one million packets per second (1.6 Gb/s) from one thousand T1 carrier rate customer premises terminals. A frequency reuse factor of sixteen is assumed by using 16 spot antenna beams with the same 100 MHz bandwidth per beam and a modulation with a one b/s per Hz bandwidth efficiency. Eight of the beams are fixed on major metropolitan areas and eight are scanning beams which periodically cover the remainder of the U.S. under dynamic control. User signals are regenerated (demodulated/remodulated) and message packages are reformatted on board. Frequency division multiple access and time division multiplex are employed on the uplinks and downlinks, respectively, for terminals within the coverage area and dwell interval of a scanning beam. Link establishment and packet routing protocols are defined. Also described is a detailed design of a separate 100 x 100 microwave switch capable of handling nonregenerated signals occupying the remaining 2.4 GHz bandwidth with 60 dB of isolation, at an estimated weight and power consumption of approximately 400 kg and 100 W, respectively.
The carrier tracking performance of the breadboard Costas Loop of the Multimegabit Telemetry Demodulator Detector System was tested with unbalanced quadriphase shift keying (UQPSK) signals. An S-band UQPSK modulator was built for the tests. The experimental results are very close to the theoretical rms phase error calculations. The test and analysis show that the rms phase error for UQPSK signals is less than 5 deg at the design point if the I-to-Q channel power ratio is larger than 6 dB.
Nonlinear optical materials (NLO) can be used to extend the useful frequency range of lasers. Frequency generation is important for laser-based remote sensing and optical data storage. Another NLO effect, the electro-optic effect, can be used to modulate the amplitude, phase, or polarization state of an optical beam. Applications of this effect in telecommunications and in integrated optics include the impression of information on an optical carrier signal or routing of optical signals between fiber optic channels. In order to utilize these effects most effectively, it is necessary to synthesize materials which respond to applied fields very efficiently. In this talk, it will be shown how the development of a fundamental understanding of the science of nonlinear optics can lead to a rational approach to organic molecules and materials with optimized properties. In some cases, figures of merit for newly developed materials are more than an order of magnitude higher than those of currently employed materials. Some of these materials are being examined for phased-array radar and other electro-optic switching applications.
Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. In this paper, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS 2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS 2 can all be significantly enhanced with pressure. Finally, we expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.
Integrated multiple-quantum-well/Fabry-Perot structure provides high-contrast variation of reflection of reading beam, under control of writing beam. Periodic potential barriers separate photogenerated electrons from holes, leading to long recombination lifetimes and large concentrations of free charge carriers. Concentrations quench excitons or fill energy bands in quantum wells, altering absorption of reading beam.
The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with “p-type carriers” LaMnO{sub 3} and the n-type semiconductor Nb-doped SrTiO{sub 3} (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. % to 1.0 at. %, the value of the built-in potential for the Nb:STO side (V{sub bn}) is reduced from 0.55 ± 0.05 eV to 0.25 ± 0.05 eV. The modulation of V{sub bn} is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.
This work analyzes carrier transport, the relaxation of non-equilibrium charge, and the electronic structure of fluorinated graphene (FG) films with graphene quantum dots (GQDs). The FG films with GQDs were fabricated by means of chemical functionalization in an aqueous solution of hydrofluoric acid. High fluctuations of potential relief inside the FG barriers have been detected in the range of up to 200 mV. A phenomenological expression that describes the dependence of the time of non-equilibrium charge emission from GQDs on quantum confinement levels and film thickness (potential barrier parameters between GQDs) is suggested. An increase in the degree of functionalization leads to a decrease in GQD size, the removal of the GQD effect on carrier transport, and the relaxation of non-equilibrium charge. The study of the electronic properties of FG films with GQDs has revealed a unipolar resistive switching effect in the films with a relatively high degree of fluorination and a high current modulation (up to ON/OFF ∼ 10{sup 4}–10{sup 5}) in transistor-like structures with a lower degree of fluorination. 2D films with GQDs are believed to have considerable potential for various electronic applications (nonvolatile memory, 2D connections with optical control and logic elements).