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At least 919 records · Page 51

The role of AlGaN buffers and channel thickness in the electronic transport properties of Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures

We try to theoretically analyze the reported experimental data of the Al{sub x}In{sub 1–x}N/AlN/GaN heterostructures grown by MOCVD and quantitatively investigate the effects of AlGaN buffers and the GaNchannel thickness on the electrical transport properties of these systems. Also, we obtain the most important effective parameters of the temperature-dependent mobility in the range 35–300 K. Our results show that inserting a 1.1 μm thick Al{sub 0.04}Ga{sub 0.96}N buffer enhances electron mobility by decreasing the effect of phonons, the interface roughness, and dislocation and crystal defect scattering mechanisms. Also, as the channel thickness increases from 20 nm to 40 nm, the electron mobility increases from 2200 to 2540 cm{sup 2}/(V s) and from 870 to 1000 cm{sup 2}/(V s) at 35 and 300 K respectively, which is attributed to the reduction in the dislocation density and the strain-induced field. Finally, the reported experimental data show that inserting a 450 nm graded AlGaN layer before an Al{sub 0.04}Ga{sub 0.96}N buffer causes a decrease in the electron mobility, which is attributed to the enhancement of the lateral size of roughness, the dislocation density, and the strain-induced field in this sample.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substrate temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.

36 MATERIALS SCIENCE↗

Operational constraints and strategies for systems to effect the sustainable, solar-driven reduction of atmospheric CO 2

The operational constraints for a 6-electron/6-proton CO 2 reduction system that operates at the concentration of CO 2 in the current atmosphere (p CO 2 = 400 ppm) have been evaluated on a variety of scale lengths that span from laboratory scale to global scale. Due to the low concentration of CO 2 in the atmosphere, limitations due to mass transport of CO 2 from the tropopause have been evaluated through five different regions, each with different characteristic length scales: the troposphere; the atmospheric boundary layer (ABL); the canopy layer; a membrane layer; and an aqueous electrolyte layer. The resulting CO 2 conductances, and associated physical transport limitations, will set the ultimate limit on the efficiency and areal requirements of a sustainable solar-driven CO 2 reduction system regardless of the activity or selectivity of catalysts for reduction of CO 2 at the molecular level. At the electrolyte/electrode interface, the steady-state limiting current density and the concomitant voltage loss associated with the CO 2 concentration overpotential in a one-dimensional solar-driven CO 2 reduction cell have been assessed quantitatively using a mathematical model that accounts for diffusion, migration and convective transport, as well as for bulk electrochemical reactions in the electrolyte. At p CO 2 = 400 ppm, the low diffusion coefficient combined with the low solubility of CO 2 in aqueous solutions constrains the steady-state limiting current density to <0.1 mA cm -2 in a typical electrochemical cell with natural convection and employing electrolytes with a range of pH values. Hence, in such a system, the CO 2 capture area must be 100- to 1000-fold larger than the solar photon collection area to enable a >10% efficient solar-driven CO 2 reduction system (based on the solar collection area). This flux limitation is consistent with estimates of oceanic CO 2 uptake fluxes that have been developed in conjunction with carbon-cycle analyses for use in coupled atmosphere/ocean general circulation models. Two strategies to improve the feasibility of obtaining efficient and sustainable CO 2 transport to a cathode surface at p CO 2 = 400 ppm are described and modeled quantitatively. The first strategy employs yet unknown catalysts, analogous to carbonic anhydrases, that dramatically accelerate the chemically enhanced CO 2 transport in the aqueous electrolyte layer by enhancing the acid–base reactions in a bicarbonate buffer system. The rapid interconversion from bicarbonate to CO 2 in the presence of such catalysts near the cathode surface would in principle yield significant increases in the steady-state limiting current density and allow for >10% solar-fuel operation at the cell level. The second strategy employs a thin-layer cell architecture to improve the diffusive transport of CO 2 by use of an ultrathin polymeric membrane electrolyte. Rapid equilibration of CO 2 at the gas/electrolyte interface, and significantly enhanced diffusive fluxes of CO 2 in electrolytes, are required to increase the steady-state limiting current density of such a system. This latter approach however only is feasible for gaseous products, because liquid products would coat the electrode and therefore thicken the hydrodynamic boundary layer and accordingly reduce the diffusive CO 2 flux to the electrode surface. Regardless of whether the limitations due to mass transport to the electrode surface are overcome on the laboratory scale, at global scales the ultimate CO 2 flux limitations will be dictated by mass transport considerations related to transport of atmospheric CO 2 to the boundary plane of the solar-driven reactor system. The transport of CO 2 across the troposphere/ABL interface, the ABL/canopy layer interface, and the canopy layer/electrolyte interface have therefore been assessed in this work, to provide upper bounds on the ultimate limits for the solar-to-fuel (STF) conversion efficiency for systems that are intended to effect the reduction of atmospheric CO 2 in a sustainable fashion at global scale.

54 ENVIRONMENTAL SCIENCES↗

Development of a Perfectly Matched Layer Technique for a Discontinuous-Galerkin Spectral-Element Method

The numerical simulation of many aerodynamic non-periodic flows of practical interest involves discretized computational domains that often must be artificially truncated. Appropriate boundary conditions are required at these truncated domain boundaries, and ideally, these boundary conditions should be perfectly "absorbing" or "nonreflecting" so that they do not contaminate the flow field in the interior of the domain. The proper specification of these boundaries is critical to the stability, accuracy, convergence, and quality of the numerical solution, and has been the topic of considerable research. The need for accurate boundary specification has been underscored in recent years with efforts to apply higher-fidelity methods (DNS, LES) in conjunction with high-order low-dissipation numerical schemes to realistic flow configurations. One of the most popular choices for specifying these boundaries is the characteristics-based boundary condition where the linearized flow field at the boundaries are decomposed into characteristic waves using either one-dimensional Riemann or other multi-dimensional Riemann approximations. The values of incoming characteristics are then suitably modified. The incoming characteristics are specified at the in flow boundaries, and at the out flow boundaries the variation of the incoming characteristic is zeroed out to ensure no reflection. This, however, makes the problem ill-posed requiring the use of an ad-hoc parameter to allow small reflections that make the solution stable. Generally speaking, such boundary conditions work reasonably well when the characteristic flow direction is normal to the boundary, but reflects spurious energy otherwise. An alternative to the characteristic-based boundary condition is to add additional "buffer" regions to the main computational domain near the artificial boundaries, and solve a different set of equations in the buffer region in order to minimize acoustic reflections. One approach that has been used involves modeling the pressure fluctuations as acoustic waves propagating in the far-field relative to a single noise-source inside the buffer region. This approach treats vorticity-induced pressure fluctuations the same as acoustic waves. Another popular approach, often referred to as the "sponge layer," attempts to dampen the flow perturbations by introducing artificial dissipation in the buffer region. Although the artificial dissipation removes all perturbations inside the sponge layer, incoming waves are still reflected from the interface boundary between the computational domain and the sponge layer. The effect of these refkections can be somewhat mitigated by appropriately selecting the artificial dissipation strength and the extent of the sponge layer. One of the most promising variants on the buffer region approach is the Perfectly Matched Layer (PML) technique. The PML technique mitigates spurious reflections from boundaries and interfaces by dampening the perturbation modes inside the buffer region such that their eigenfunctions remain unchanged. The technique was first developed by Berenger for application to problems involving electromagnetic wave propagation. It was later extended to the linearized Euler, Euler and Navier-Stokes equations by Hu and his coauthors. The PML technique ensures the no-reflection property for all waves, irrespective of incidence angle, wavelength, and propagation direction. Although the technique requires the solution of a set of auxiliary equations, the computational overhead is easily justified since it allows smaller domain sizes and can provide better accuracy, stability, and convergence of the numerical solution. In this paper, the PML technique is developed in the context of a high-order spectral-element Discontinuous Galerkin (DG) method. The technique is compared to other approaches to treating the in flow and out flow boundary, such as those based on using characteristic boundary conditions and sponge layers. The superiority of the current PML technique over other approaches is demonstrated for a range of test cases, viz., acoustic pulse propagation, convective vortex, shear layer flow, and low-pressure turbine cascade flow. The paper is structured as follows. We first derive the PML equations from the non{linear Euler equations. A short description of the higher-order DG method used is then described. Preliminary results for the four test cases considered are then presented and discussed. Details regarding current work that will be included in the final paper are also provided.

Spectral↗

Synthesis and electrical behavior of VO 2 thin films grown on SrRuO 3 electrode layers

VO 2 thin films were grown on conducting oxide underlayer SrRuO 3 buffered SrTiO 3 (111) and Si/SiO 2 substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO 2 films grown on SrRuO 3 buffered SrTiO 3 and polycrystalline structure for films grown on SrRuO 3 buffered Si/SiO 2 . X-ray photoelectron spectroscopy confirms a dominant presence of V 4+ in both films and establishes a high-quality growth of single-phase VO 2 films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57–3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO 3 bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. Here, the results demonstrate the growth of high-quality VO 2 on conducting SrRuO 3 layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

36 MATERIALS SCIENCE↗

Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers

Highly crystalline epitaxial Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} (BST) thin-films are grown on (001)-oriented LaNiO{sub 3}-buffered LaAlO{sub 3} substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than in thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V{sup −1}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The epidermis of the pea epicotyl is not a unique target tissue for auxin-induced growth

Previous research has suggested that the epidermis of dicotyledonous stems is the primary site of auxin action in elongation growth. We show for pea (Pisum sativum L.) epicotyl sections that this hypothesis is incorrect. In buffer (pH 6.5), sections from which the outer cell layers were removed (peeled) elongated slowly and to the same extent as intact sections. Addition of 10 micromolar indoleacetic acid to this incubation medium caused peeled sections to grow to the same extent and with the same kinetics as auxin-treated nonpeeled sections. This indicates that both epidermis and cortical tissues have the ability to respond rapidly to auxin and that the epidermis is not the sole site of auxin action in dicotyledonous stems. Previous reports that peeled pea sections respond poorly to auxin may have resulted from an acid extension of these sections due to the use of distilled water as the incubation medium.

Non-NASA Center↗

Modeling Stress-Induced Pore Water Pressures in The Vadose Zone Beneath a Composite-Lined Landfill - 20029

A finite-element model was developed to evaluate mechanisms contributing to positive pore pressures measured with sealed pressure transducers in the geological buffer beneath the Environmental Management Waste Management Facility, a composite-lined mixed waste disposal facility operated by the US Department of Energy. The geological buffer is a 3-m-thick engineered fine-textured layer directly beneath the Environmental Management Waste Management Facility's composite liner, and above the groundwater table. The model accounts for changes in pore water pressure resulting from (i) loading imposed by waste placed on the overlying liner, (ii) moistening of the geological buffer due to equilibration with the underlying geological materials, and (iii) fluctuations in the elevation of the underlying groundwater table. Pore water pressures predicted by the model are in good agreement with pore water pressures measured in the field. The predictions confirm that positive pore water pressures recorded by the sealed pressure transducers in the geological buffer are excess pore water pressures induced by the vertical normal stress imposed by waste placed on the liner, and are not due to a rise in the groundwater table. Simulations also showed that two additional years of filling would further increase the pore water pressure without any change in elevation of the groundwater table. The geological buffer remained unsaturated during the simulation, with a B-coefficient (parameter indicative of the degree of saturation) similar to that computed from the field-measured pore water pressures and waste filling records. Larger increases in pore water pressure were observed when the geological buffer was assumed to have higher initial saturation, as was observed in the field data. Incorporating seasonal fluctuations in the groundwater table beneath the geological buffer in the model resulted in predictions of small seasonal oscillation in the pore water pressure at the measurement location, similar to seasonal oscillations observed in the field. Predictions made with the model indicate that the dissipation of the excess pore water pressures will occur over decades due to the low hydraulic conductivity of the geological buffer material. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Development of coatings to control electroosmosis in zero gravity electrophoresis

A major problem confronting the operation of free fluid electrophoresis in zero gravity is the control of electrokinetic phenomena and, in particular, electroosmosis. Due to the severity of counter flow, as a result of electroosmosis, the electrical potential developed at the surface of shear must be maintained at near, or as close to, zero millivolts as possible. Based upon this investigation, it has been found that the amount of bound water or the degree of hydroxylation plays a major role in the control of this phenomena. Of necessity, factors, such as adhesion, biocompatibility, protein adsorption, and insolubility were considered in this investigation because of the long buffer-coating exposure times required by present space operations. Based upon tests employing microcapillary electrophoresis, it has been found that gamma amino propyl trihydroxysilane produced a coating which provides the lowest potential (minus 3.86 mv) at the surface of shear between the stationary and mobile layers. This coating has been soaked in both borate and saline buffers, up to three months, in a pH range of 6.5 to 10 without deleterious effects or a change in its ability to control electrokinetic effects.

Krupnick, A. C.↗

Velocity and pressure fields associated with near-wall turbulence structures

Computer generated databases containing velocity and pressure fields in three-dimensional space at a sequence of time-steps, were used for the investigation of near-wall turbulence structures, their space-time evolution, and their associated pressure fields. The main body of the results were obtained from simulation data for turbulent channel flow at a Reynolds number of 180 (based on half-channel height and friction velocity) with a grid of 128 x 129 x and 128 points. The flow was followed over a total time of 141 viscous time units. Spanwise centering of the detected structures was found to be essential in order to obtain a correct magnitude of the associated Reynolds stress contribution. A positive wall-pressure peak is found immediately beneath the center of the structure. The maximum amplitude of the pressure pattern was, however, found in the buffer region at the center of the shear-layer. It was also found that these flow structures often reach a maximum strength in connection with an asymmetric spanwise motion, which motivated the construction of a conditional sampling scheme that preserved this asymmetry.

Johansson, Arne V.↗

Stress intensity factors of composite orthotropic plates containing periodic buffer strips

The fracture problem of laminated plates which consist of bonded orthotropic layers is studied. The fields equations for an elastic orthotropic body are transformed to give the displacement and stress expressions for each layer or strip. The unknown functions in these expressions are found by satisfying the remaining boundary and continuity conditions. A system of singular integral equations is obtained from the mixed boundary conditions. The singular behavior around the crack tip and at the bimaterial interface is studied. The stress intensity factors are computed for various material combinations and various crack geometries. The results are discussed and are compared with those for isotropic materials.

Delale, F.↗

The role of ice nuclei recycling in the maintenance of cloud ice in Arctic mixed-phase stratocumulus

This study investigates the maintenance of cloud ice production in Arctic mixed-phase stratocumulus in large eddy simulations that include a prognostic ice nuclei (IN) formulation and a diurnal cycle. Balances derived from a mixed-layer model and phase analyses are used to provide insight into buffering mechanisms that maintain ice in these cloud systems. We find that, for the case under investigation, IN recycling through subcloud sublimation considerably prolongs ice production over a multi-day integration. This effective source of IN to the cloud dominates over mixing sources from above or below the cloud-driven mixed layer. Competing feedbacks between dynamical mixing and recycling are found to slow the rate of ice lost from the mixed layer when a diurnal cycle is simulated. The results of this study have important implications for maintaining phase partitioning of cloud ice and liquid that determine the radiative forcing of Arctic mixed-phase clouds.

54 ENVIRONMENTAL SCIENCES↗

Influence of Shear Strength Assumptions on BISON Debonding Simulations

Accurately predicting the thermomechanical response of buffer–IPyC debonding in TRISO fuel particles requires reliable mechanical property inputs for each coating layer, particularly the normal and shear strengths that influence interlayer delamination and stress concentrations. Micro tensile testing of AGR-2 fuel particles provided experimentally measured normal strengths for the buffer, IPyC, and buffer–IPyC interface; however, shear strength was not measured. As a result, BISON simulations of interface debonding must rely on assumed shear strength values, typically estimated as 20–40% of the measured ultimate tensile strength. This study evaluates how these assumed shear strength values influence cohesive zone model (CZM) predictions of buffer–IPyC separation in AGR 2 TRISO particles. Using micro tensile data from three AGR 2 compacts (2 1 3, 5 1 3, and 6 3 3), BISON simulations were performed with multiple shear strength assumptions to quantify their effect on radial and tangential stress evolution, debonding, and gap propagation. The results show that shear strength is a high sensitivity parameter: increasing the assumed shear strength significantly alters the stress distribution at the buffer–IPyC junction, shifts the predicted debonding location, and changes the extent of partial gap formation. While normal strength controls the initiation of interface separation, shear strength strongly influences the mode mixity of the failure process and the resulting stress concentrations transmitted to the IPyC and SiC layers. These findings highlight a critical gap in current TRISO mechanical characterization. Without experimentally measured shear strength, BISON simulations must rely on approximations that introduce uncertainty into predictions of coating layer integrity and fission product barrier performance. Future fuel qualification campaigns should therefore consider measurement of shear strength at the interlayer interfaces to reduce model uncertainty and improve the fidelity of TRISO fuel performance simulations.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures

In this work, we calculate the two-dimensional quantum energy system of the In(Ga)As wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model calculations were carried on the basis of realistic material parameters taking in consideration their dependence on the strain relaxation of the metamorphic buffer; results of the calculations were validated against available literature data. Model results confirmed previous hypothesis on the extrinsic nature of the disappearance of wetting layer emission in metamorphic structures with high In composition. We also show how, by adjusting InGaAs metamorphic buffer parameters, it could be possible: (i) to spatially separate carriers confined in quantum dots from wetting layer carriers, (ii) to create an hybrid 0D-2D system, by tuning quantum dot and wetting layer levels. These results are interesting not only for the engineering of quantum dot structures but also for other applications of metamorphic structures, as the two design parameters of the metamorphic InGaAs buffer (thickness and composition) provide additional degrees of freedom to control properties of interest.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al{sub 2}O{sub 3}

The greatest challenge for improving the power conversion efficiency of Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (V{sub OC}). Probable leading causes of the V{sub OC} deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. In this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al{sub 2}O{sub 3} layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al{sub 2}O{sub 3} interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased V{sub OC} resulting from the modification of the heterojunction interface as a result of ALD-Al{sub 2}O{sub 3} treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced V{sub OC} even in such devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaN/Si heterojunctions

Growths of GaN on Si(111) - (7 x 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a low-temperature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the high-temperature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n{sup -}-Si substrate shows rectifying characteristics.

36 MATERIALS SCIENCE↗

Controlling a three dimensional electron slab of graded Al{sub x}Ga{sub 1−x}N

Polarization induced degenerate n-type doping with electron concentrations up to ∼10{sup 20 }cm{sup −3} is achieved in graded Al{sub x}Ga{sub 1−x}N layers (x: 0% → 37%) grown on unintentionally doped and on n-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy, and electron dispersive x-ray spectroscopy confirm the gradient in the composition of the Al{sub x}Ga{sub 1−x}N layers, while Hall effect studies reveal the formation of a three dimensional electron slab, whose conductivity can be adjusted through the GaN(:Si) buffer/reservoir.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of buffer termination on intermixing and conductivity in LaTiO 3 /SrTiO 3 heterostructures integrated on Si(100)

Here, the control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO 3 (LTO) grown epitaxially on SrTiO 3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO 2 -terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La 1-x Sr x TiO 3 . La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.

36 MATERIALS SCIENCE↗