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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Design and fabrication of non silicon substrate based MEMS energy harvester for arbitrary surface applications

Internet of Things (IoT) uses MEMS sensor nodes and actuators to sense and control objects through Internet. IOT deploys millions of chemical battery driven sensors at different locations which are not reliable many times because of frequent requirement of charging & battery replacement in case of underground laying, placement at harsh environmental conditions, huge count and difference between demand (24 % per year) and availability (energy density growing rate 8% per year). Energy harvester fabricated on silicon wafers have been widely used in manufacturing MEMS structures. These devices require complex fabrication processes, costly chemicals & clean room. In addition to this silicon wafer based devices are not suitable for curved surfaces like pipes, human bodies, organisms, or other arbitrary surface like clothes, structure surfaces which does not have flat and smooth surface always. Therefore, devices based on rigid silicon wafers are not suitable for these applications. Flexible structures are the key solution for this problems. Energy transduction mechanism generates power from free surrounding vibrations or impact. Sensor nodes application has been purposefully selected due to discrete power requirement at low duty cycle. Such nodes require an average power budget in the range of about 0.1 microwatt to 1 mW over a period of 3-5 seconds. Energy harvester is the best alternate source in contrast with battery for sensor node application. Novel design of Energy Harvester based on cheapest flexible non silicon substrate i.e. cellulose acetate substrate have been modeled, simulated and analyzed on COMSOL multiphysics and fabricated using sol-gel spin coating setup. Single cantilever based harvester generates 60-75 mV peak electric potential at 22Hz frequency and approximately 22 µW power at 1K-Ohm load. Cantilever array can be employed for generating higher voltage by replicating this structure. This work covers design, optimization, fabrication of harvester and schottky diodes based voltage multiplier.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1984

An Improved Analysis of the Thermal Buckling of Silicon Sheet

Buckling problems on the production of wide and thin silicon sheet are discussed. Buckling occurs in all of the processes which are investigated for their potential in mass producing wide silicon sheet for use in making solar cells. It is a fact that the processes which produce good ribbon 2 cm in width do not yield the same quality product at 10 cm in width. Buckling develops precisely because the sheets are wide and very very thin. The buckling of very thin cantilever plates due to temperature variations in the axial direction is considered. The temperature variation in the width direction was determined. Axial temperature variations which cause very thin plates to buckle in a torsional mode are demonstrated. It is assumed that the particular variation of the stress function in the width direction and thereafter the analysis is exact.

Dillon, O. W., Jr.↗
DOE OSTI2017

On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation

A method for the separation of thin ITO (indium-tin-oxide) films from a silicon substrate by pulsed laser irradiation is studied. The method enables the detachment of films with thicknesses of 360 nm and more without their destruction. The separation process consists in successive irradiation of the surface with single microsecond laser pulses at a wavelength of 650 nm. Upon being detached from silicon substrates, the films produced by high-frequency magnetron sputtering have a transmittance of 65% in the visible spectral range and a resistivity of ~1.2 kΩ/□. The thermal stresses appearing in thin ITO films and leading to their detachment are estimated.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

Hoenk, Michael E.↗
NASA NTRS1982

Flat-plate collector research area: Silicon material task

Silane decomposition in a fluidized-bed reactor (FBR) process development unit (PDU) to make semiconductor-grade Si is reviewed. The PDU was modified by installation of a new heating system to provide the required temperature profile and better control, and testing was resumed. A process for making trichlorosilane by the hydrochlorination of metallurgical-grade Si and silicon tetrachloride is reported. Fabrication and installation of the test system employing a new 2-in.-dia reactor was completed. A process that converts trichlorosilane to dichlorosilane (DCS), which is reduced by hydrogen to make Si by a chemical vapor deposition step in a Siemens-type reactor is described. Testing of the DCS PDU integraled with Si deposition reactors continued. Experiments in a 2-in.-dia reactor to define the operating window and to investigate the Si deposition kinetics were completed.

Lutwack, R.↗
NASA NTRS2007

Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

Abu-Safe, Husam H.↗
DOE OSTI2020

Genesis and Propagation of Fractal Structures During Photoelectrochemical Etching of n-Silicon

The genesis, propagation, and dimensions of fractal-etch patterns that form anodically on front- or back-illuminated n-Si(100) photoelectrodes in contact with 11.9 M NH 4 F (aqueous) have been investigated during either a linear potential sweep or a constant potential hold ( E = +6.0 V versus Ag/AgCl). Optical images collected in situ during electrochemical experiments reflected the location and underlying mechanism of initiation and propagation of the structures on the surface. X-ray photoelectron spectroscopic (XPS) data collected for samples emersed from the electrolyte at varied times provided detailed information about the chemistry of the surface during fractal etching. The fractal structure was strongly influenced by the orientation of the crystalline Si sample. Furthermore, the etch patterns were initially generated at points along the circumference of bubbles that formed upon immersion of n-Si(100) samples in the electrolyte, most likely due to the electrochemical and electronic isolation of areas beneath bubbles. XPS data showed the presence of a tensile-stressed silicon surface throughout the etching process as well as the presence of SiO x F y on the surface. The two-dimensional fractal dimension, D f,2D , of the patterns increased with etching time to a maximum observed value of D f,2D = 1.82. Promotion of fractal etching near etch masks that electrochemically and electronically isolated areas of the photoelectrode surface enabled the selective placement of highly branched structures at desired locations on an electrode surface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. Here, the laser method provides enhanced conductivity and implied open circuit voltage while reducing emitter saturation current density and surface heating, as opposed to conventional high-temperature furnace annealing of the bulk Si wafer with a TOPCon structure. We identify an appropriate laser wavelength, fluence, and layer thickness using modeling and simulations. Raman and Hall effect measurements demonstrate increased crystallinity and dopant activation, whereas photoconductive decay shows enhanced surface and interface passivation quality. Additionally, we examine the role of subsequent SiNx deposition on further improving the passivation of laser-processed TOPCon layers to achieve a 5.9 kΩ/sq film sheet resistance, 2 ms effective carrier lifetime, 718 mV implied open-circuit voltage (iVOC), and 8.6 fA/cm 2 one-side recombination current density (J0) with the potential for further passivation improvement via laser process and a-Si layer thickness optimization.

14 SOLAR ENERGY↗
NASA NTRS1980

Anisotropic Tribological Properties of Silicon Carbide

The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

Miyoshi, K.↗
NASA NTRS1984

Simultaneous junction formation

High-risk, high-payoff improvements to a baseline process sequence of simultaneous junction formation of silicon solar cells are discussed. The feasibility of simultaneously forming front and back junctions of solar cells using liquid dopants on dendritic web silicon was studied. Simultaneous diffusion was compared to sequential diffusion. A belt furnace for the diffusion process was tested.

Campbell, R. B.↗
DOE OSTI2016

Fabrication of advanced accident tolerant U-Si fuel forms

Prospective advanced accident tolerant UN-USi fuel forms for light-water reactors are being studied at Los Alamos National Laboratory. In this paper we present a recent effort to fabricate and characterize U{sub 3}Si{sub 5} and UN-U{sub 3}Si{sub 5} fuel. The U{sub 3}Si{sub 5} is prepared by arc-melting stoichiometric amounts of uranium and silicon metals. The arc melting process consists of cutting U metal plate into small pieces that can be placed in a tri-arc furnace for melting. The material is slowly heated until a uniform melt of the U and Si is achieved. The fabrication of the U{sub 3}Si{sub 5} pellets followed a conventional cold-press and sinter process. As for the fabrication of UN-U{sub 3}Si{sub 5}, the uranium nitride (UN) feedstock powder was synthesized using carbothermic reduction nitridation. The UN is milled and sieved to sub-74 μm. The UN was mixed with EBS (ethylene bis-stearamide) and milled for 45 minutes. The UN-EBS was combined with 10 wt.% U{sub 3}Si{sub 5} powder (equivalent to 15 vol.% in UN) and additional EBS. The fabrication of the UN-U{sub 3}Si{sub 5} pellets followed a conventional cold-press and sinter process similar to that used to fabricate the U{sub 3}Si{sub 5} pellets. A sample UN-U{sub 3}Si{sub 5} pellet was cross-sectioned, ground, and polished for optical microscopy. The UN and U{sub 3}Si{sub 5} phases are apparent as well as pores and micro-cracks. The affect of micro-cracking on fuel performance is unknown and should be assessed during post-irradiation examination.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1977

Lunar resources and their utilization

Lunar surface materials offer a source of raw materials for space processing to produce structural metals, oxygen, silicon, glass, and ceramic products. Significant difference exist, however, between lunar surface materials in the highlands and those in the maria. In the highlands the soil depth is at least an order of magnitude greater, the Al:Fe ratio is ten times greater, the content of plagioclase as a source of clear glass is three times as great, and the content of Ti is at least an order of magnitude lower. Evaluation of the extractive metallurgy and chemical operations associated with carbothermic and silicothermic refinement of lunar regolith suggests that Fe, Al, Si, Mg and probably Ti, Cr and Mn can be recovered, while oxygen is produced as a by-product. A conservative plant design yields its own weight in oxygen, silicon, and structural metals in less than six days. Power requirements for a throughput of 300,000 tons per year is less than 500 megawatts. The processing is done more economically in space than on the lunar surface.

Phinney, W. C.↗
NASA NTRS1984

The future of crystalline silicon technology in the US Department of Energy program

Two basic findings were presented in the outlined report. The first is that silicon has a very high potential efficiency, demonstrated improvement in reliability and a significant potential for cost reductions. The second is that the photovoltaic technology development process is highly uncertain, but crystalline silicon technology has a substantial knowledge base to draw from, improving its chances of success. Several issues to be addressed are outlined.

Scolaro, A. F.↗
DOE OSTI2024

Non-resonant Bragg scattering four-wave mixing at near-visible wavelengths in low-confinement silicon nitride waveguides

Quantum state coherent frequency conversion processes—such as Bragg-scattering four-wave mixing (BSFWM)—hold promise as a flexible technique for networking heterogeneous and distant quantum systems. In this Letter, we demonstrate BSFWM within an extended (1.2-m) low-confinement silicon nitride waveguide and show that this system has the potential for near-unity frequency conversion in visible and near-visible wavelength ranges. Using sensitive classical heterodyne laser spectroscopy at low optical powers, we characterize the Kerr coefficient (∼1.55 W −1 m −1 ) and linear propagation loss (∼0.0175 dB/cm) of this non-resonant waveguide system, revealing a record-high nonlinear figure of merit (NFM = γ / α ≈ 3.85 W −1 ) for BSFWM of near-visible light in non-resonant silicon nitride waveguides. We predict how, at high yet achievable on-chip optical powers, this NFM would yield a comparatively large frequency conversion efficiency, opening the door to near-unity flexible frequency conversion without cavity enhancement and resulting bandwidth constraints.

Jaber, Nicholas (ORCID:000900070106809X)↗
DOE OSTI2016

Flash (Ultra-Rapid) Spark-Plasma Sintering of Silicon Carbide

A new ultra-rapid process of flash spark plasma sintering is developed. The idea of flash spark plasma sintering (or flash hot pressing - FHP) stems from the conducted theoretical analysis of the role of thermal runaway phenomena for material processing by flash sintering. The major purpose of the present study is to theoretically analyze the thermal runaway nature of flash sintering and to experimentally address the challenge of uncontrollable thermal conditions by the stabilization of the flash sintering process through the application of the external pressure. The effectiveness of the developed FHP technique is demonstrated by the few seconds–long consolidation of SiC powder in an industrial spark plasma sintering device. Specially designed sacrificial dies heat the pre-compacted SiC powder specimens to a critical temperature before applying any voltage to the powder volume and allowing the electrode-punches of the SPS device setup to contact the specimens and pass electric current through them under elevated temperatures. The experimental results demonstrate that flash sintering phenomena can be realized using conventional SPS devices. The usage of hybrid heating SPS devices is pointed out as the mainstream direction for the future studies and utilization of the new flash hot pressing (ultra-rapid spark plasma sintering) technique.

36 MATERIALS SCIENCE↗