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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

A bioactive supramolecular and covalent polymer scaffold for cartilage repair in a sheep model

Regeneration of hyaline cartilage in human-sized joints remains a clinical challenge, and it is a critical unmet need that would contribute to longer healthspans. Injectable scaffolds for cartilage repair that integrate both bioactivity and sufficiently robust physical properties to withstand joint stresses offer a promising strategy. We report here on a hybrid biomaterial that combines a bioactive peptide amphiphile supramolecular polymer that specifically binds the chondrogenic cytokine transforming growth factor β-1 (TGFβ-1) and crosslinked hyaluronic acid microgels that drive formation of filament bundles, a hierarchical motif common in natural musculoskeletal tissues. The scaffold is an injectable slurry that generates a porous rubbery material when exposed to calcium ions once placed in cartilage defects. The hybrid material was found to support in vitro chondrogenic differentiation of encapsulated stem cells in response to sustained delivery of TGFβ-1. Using a sheep model, we implanted the scaffold in shallow osteochondral defects and found it can remain localized in mechanically active joints. Evaluation of resected joints showed significantly improved repair of hyaline cartilage in osteochondral defects injected with the scaffold relative to defects injected with the growth factor alone, including implantation in the load-bearing femoral condyle. These results demonstrate the potential of the hybrid biomimetic scaffold as a niche to favor cartilage repair in mechanically active joints using a clinically relevant large-animal model.

Science & Technology - Other Topics↗
DOE OSTI2023

A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields

Abstract The boron-vacancy spin defect ( $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − ) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first-principles calculations to determine the coupling of the $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − electronic spin to strain and electric fields. Our work unravels the interplay between local piezoelectric and elastic effects contributing to the final response to the electric fields. The theoretical predictions are then used to analyse optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − centres. We prove that the orthorhombic zero-field splitting parameter results from local electric fields produced by surrounding charge defects. This work paves the way towards applications of $${\,{{\mbox{V}}}}_{{{\mbox{B}}}\,}^{-}$$ V B − centres for quantitative electric field imaging and quantum sensing under pressure.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Exploitation of Defects in High Entropy Ceramic Barrier Materials

A critical mission need exists to develop new materials that can withstand extreme environments and multiple sequential threats. High entropy materials, those containing 5 or more metals, exhibit many exciting properties which would potentially be useful in such situations. However, a particularly hard challenge in developing new high entropy materials is determining a priori which compositions will form the desired single phase material. The project outlined here combined several modeling and experimental techniques to explore several structure-property-relationships of high entropy ceramics in an effort to better understand the connection between their compositional components, their observed properties, and stability. We have developed novel machine learning algorithms which rapidly predict stable high entropy ceramic compositions, identified the stability interplay between configurational entropy and cation defects, and tested the mechanical stability of high entropy oxides using the unique capabilities at the Dynamic Compression Sector facility and the Saturn accelerator.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Defects in Layered van der Waals Heterostructures: Implications for Thermoelectrics

Layered van der Waals heterostructures provide extraordinary opportunities for applications such as thermoelectrics and allow for tunability of optical and electronic properties. The performance of devices made from these heterostructures will depend on their properties, which are sensitive to the nanoarchitecture (constituent layer thicknesses, layer sequence, etc.). However, performance will also be impacted by defects, which will vary in concentration and identity with the nanoarchitecture and preparation conditions. Here, we identify several types of defects and propose mechanisms for their formation, focusing on compounds in the ([SnSe] 1+δ ) m (TiSe 2 ) n system prepared using the modulated elemental reactants method. The defects were observed by atomic resolution high-angle annular dark-field scanning transmission electron microscopy and can be broadly categorized into those that form domain boundaries as a result of rotational disorder from the self-assembly process and those that are layer-thickness-related and result from local or global deviations in the amount of material deposited. Furthermore, defect type and density were found to depend on the nanoarchitecture of the heterostructure. Categorizing the defects provides insights into defect formation in these van der Waals layered heterostructures and suggests strategies for controlling their concentrations. Strategies for controlling defect type and concentration are proposed, which would have implications for transport properties for applications in thermoelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Structural and Chemical Features Giving Rise to Defect Tolerance of Binary Semiconductors

Defect tolerance, or the resilience of electronic transport properties of a crystalline material to the presence of defects, has emerged as a critical factor in the success of hybrid lead halide perovskites as photovoltaic absorbers. A key aspect of defect tolerance is the shallow character of dominant intrinsic defects. However, while qualitative heuristics to identify other defect-tolerant materials have been proposed, in particular, the presence of a partially oxidized ns 2 cation such as Pb, no compelling comprehensive understanding of how these shallow defects arise has yet emerged. Using modern defect theory and defect calculations, we conduct a detailed investigation of the mechanisms and identify specific features related to the chemical composition and crystal structure that give rise to defect tolerance. We find that an ns 2 cation is necessary but not sufficient to guarantee shallow cation vacancies in an s-p system, and that a compound's crystal structure can ensure shallow anion vacancies in a variety of ways. Specifically, the crystal site symmetry can enforce weak interactions between the orbitals that form the defect states, thus ensuring that those defect states are shallow. We substantiate our findings by computing defect formation energies in several known as well as hypothetical materials and conclude by discussing prospects for identifying semiconductors that satisfy these criteria.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Nanotube/Nanowire as Effective Defect Sinks in Metals—Atomistic Simulations and In Situ Ion Radiation Transmission Electron Microscopy

The accumulation of defects during irradiation leads to material property degradation modes such as embrittlement and swelling, eventually causing material failure. Effective and efficient removal of defects is of crucial importance to design radiation damage-tolerant materials. Here, by biasing defect migration pathways via carbon nanotube (CNT) infiltration, we present a greatly enhanced damage-tolerant Al-CNT composite with defect storage measured to be one order of magnitude lower than that in pure, irradiated Al. Furthermore, extreme-value statistics (largest size) of defect clusters are significantly changed in the presence of CNT. In situ ion irradiation transmission electron microscopy (TEM) experiments and atomistic simulations together reveal the dynamic evolution and convergent diffusion of radiation-induced defects to CNTs, facilitating defect recombination and enhancing radiation tolerance. The occurrence of CNT-biased defect convergent migration is tuned by the thermodynamic driving force of stress gradient in Al matrix due to the CNT phase transformation. This approach to controlling defect migration using 1D interface engineering creates a new opportunity to enhance the properties of nuclear materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

The dynamic adsorption affinity of ligands is a surrogate for the passivation of surface defects

Abstract Surface defects in semiconducting materials, though they have been widely studied, remain a prominent source of loss in optoelectronic devices; here we sought a new angle of approach, looking into the dynamic roles played by surface defects under atmospheric stressors and their chemical passivants in the lifetime of optoelectronic materials. We find that surface defects possess properties distinct from those of bulk defects. ab initio molecular dynamics simulations reveal a previously overlooked reversible degradation mechanism mediated by hydrogen vacancies. We find that dynamic surface adsorption affinity (DAA) relative to surface treatment ligands is a surrogate for passivation efficacy, a more strongly-correlated feature than is the static binding strength emphasized in prior reports. This guides us to design targeted passivator ligands with high molecular polarity: for example, 4-aminobutylphosphonic acid exhibits strong DAA and provides defect passivation applicable to a range of perovskite compositions, including suppressed hydrogen vacancy formation, enhanced photovoltaic performances and operational stability in perovskite solar cells.

Science & Technology - Other Topics↗
DOE OSTI2023

Disordered hyperuniform solid state materials

Disordered hyperuniform (DHU) states are recently discovered exotic states of condensed matter. DHU systems are similar to liquids or glasses in that they are statistically isotropic and lack conventional long-range translational and orientational order. On the other hand, they completely suppress normalized infinite-wavelength density fluctuations like crystals and, in this sense, possess a hidden long-range correlation. Very recently, there have been several exciting discoveries of disordered hyperuniformity in solid-state materials, including amorphous carbon nanotubes, amorphous 2D silica, amorphous graphene, defected transition metal dichalcogenides, defected pentagonal 2D materials, and medium/high-entropy alloys. It has been found that the DHU states of these materials often possess a significantly lower energy than other disorder models and can lead to unique electronic and thermal transport properties, which results from mechanisms distinct from those identified for their crystalline counterparts. For example, DHU states can enhance electronic transport in 2D amorphous silica; DHU medium/high-entropy alloys realize the Vegard's law and possess enhanced electronic bandgaps and thermal transport at low temperatures. These unique properties open up many promising potential device applications in optoelectronics and thermoelectrics. Here, we provide a focused review on these important new developments of hyperuniformity in solid-state materials, taking an applied and “materials” perspective, which complements the existing reviews on hyperuniformity in physical systems and photonic materials. As a result, future directions and outlook are also provided, with a focus on the design and discovery of DHU quantum materials for quantum information science and engineering.

2D materials↗
DOE OSTI2023

Can a deep-learning model make fast predictions of vacancy formation in diverse materials?

The presence of point defects, such as vacancies, plays an important role in materials design. Here, we explore the extrapolative power of a graph neural network (GNN) to predict vacancy formation energies. We show that a model trained only on perfect materials can also be used to predict vacancy formation energies (E vac ) of defect structures without the need for additional training data. Such GNN-based predictions are considerably faster than density functional theory (DFT) calculations and show potential as a quick pre-screening tool for defect systems. To test this strategy, we developed a DFT dataset of 530 E vac consisting of 3D elemental solids, alloys, oxides, semiconductors, and 2D monolayer materials. We analyzed and discussed the applicability of such direct and fast predictions. We applied the model to predict 192 494 E vac for 55 723 materials in the JARVIS-DFT database. Our work demonstrates how a GNN-model performs on unseen data.

2D materials↗
NASA NTRS1980

Estimation of uncertainty in isotherms deduced from Hugoniots resulting from shockwave generated defects

The problem of how defect concentrations produced in a shock experiment affect the isothermal equation of state is considered. From the few experimental results available that bear directly on this question, it appears the effect could be substantial, i.e., the pressure in material free of defects may be 10-25% lower at a given volume than the isothermal pressure deduced from Hugoniot data on the assumption that defects are negligible in the shocked material. This correction caused by the presence of defects is called the defect pressure.

Ruoff, A. L.↗
DOE OSTI2019

Interactions between displacement cascade and dislocation and their influences on Peierls stress in Fe-20Cr-25Ni alloys

The interactions between dislocations and displacement cascades are investigated using molecular dynamics simulations. The primary knock-on atoms (PKAs) are placed at different distances to edge and screw dislocation lines. Specifically, an fcc Fe-20Cr-25Ni system is studied; the alloy is the based alloy for Alloy 709. The number of defects is calculated using Wigner-Seitz analysis in order to illustrate the effect of dislocations on cascades. The displacement cascades in systems containing dislocations tend to generate more total defects compared with bulk systems, but eventually lead to less surviving defects in the materials matrix due to interactions with dislocations. The changes in atomic structures of the dislocations after interacting with cascades are analyzed to understand how the primary damage affects dislocations. The displacement cascade potentially causes dislocation climb in edge dislocations and cross-slip in screw dislocations, which could serve as additional mechanisms contributing to the radiation-induced hardening (RIH) compared with conventional RIH models. To reveal this, Peierls stresses are calculated before and after cascades using molecular static simulations. This study provides critical information of how defect production and dislocations are correlated, especially when total dose is high, which needs to be taken into account in upper scale models, such as mean-field rate theory.

Lu, Zizhe↗
DOE OSTI2025

Quantifying dislocation-type defects in post irradiation examination via transfer learning

The quantitative analysis of dislocation-type defects in irradiated materials is critical to materials characterization in the nuclear energy industry. The conventional approach of an instrument scientist manually identifying any dislocation defects is both time-consuming and subjective, thereby potentially introducing inconsistencies in the quantification. This work approaches dislocation-type defect identification and segmentation using a standard open-source computer vision model, YOLO11, that leverages transfer learning to create a highly effective dislocation defect quantification tool while using only a minimal number of annotated micrographs for training. This model demonstrates the ability to segment both dislocation lines and loops concurrently in micrographs with high pixel noise levels and on two alloys not represented in the training set. Inference of dislocation defects using transmission electron microscopy on three different irradiated alloys relevant to the nuclear energy industry are examined in this work with widely varying pixel noise levels and with completely unrelated composition and dislocation formations for practical post irradiation examination analysis. Code and models are available at https://github.com/idaholab/PANDA.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Unveiling defect-mediated carrier dynamics in monolayer semiconductors by spatiotemporal microwave imaging

The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS 2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals, respectively. Time-resolved experiments indicate that the critical process for photoexcited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the long-lived photoconductivity signal is higher in chemical-vapor deposited (CVD) samples than exfoliated monolayers due to the presence of traps that inhibits recombination. Overall, our work reveals the intrinsic time and length scales of electrical response to photoexcitation in van der Waals materials, which is essential for their applications in optoelectronic devices.

42 ENGINEERING↗
DOE OSTI2022

Unveiling the interaction of nanopatterned void superlattices with irradiation cascades

Nanopatterned microstructures in materials can have a profound impact on materials’ physical and chemical properties. While voids are typically considered as detrimental defects in irradiated materials, the patterning of nanoscale voids causes the formation of void superlattices and provides a highly efficient mechanism for gas storage. Despite the important applications of nanopatterned defect superlattices, how they degrade under irradiation remains unclear. Here we provide direct observation of the evolution of void superlattices under irradiation and elucidate the interaction of void superlattices with irradiation cascades. We reveal that the instability of void superlattices under irradiation is caused by heterogenous void shrinkage and demonstrate the imperative role of mixed 1D/3D diffusion of self-interstitial atoms and injected inert gas atoms on void shrinkage and void superlattice instability. Understanding the degradation mechanisms of nanopatterned microstructures is essential to designing damage-tolerant materials and broadening their applications in extreme environments.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Revealing nano-scale lattice distortions in implanted material with 3D Bragg ptychography

Small ion-irradiation-induced defects can dramatically alter material properties and speed up degradation. Unfortunately, most of the defects irradiation creates are below the visibility limit of state-of-the-art microscopy. As such, our understanding of their impact is largely based on simulations with major unknowns. Here we present an x-ray crystalline microscopy approach, able to image with high sensitivity, nano-scale 3D resolution and extended field of view, the lattice strains and tilts in crystalline materials. Using this enhanced Bragg ptychography tool, we study the damage helium-ion-irradiation produces in tungsten, revealing a series of crystalline details in the 3D sample. Our results lead to the conclusions that few-atom-large ‘invisible’ defects are likely isotropic in orientation and homogeneously distributed. A partially defect-denuded region is observed close to a grain boundary. These findings open up exciting perspectives for the modelling of irradiation damage and the detailed analysis of crystalline properties in complex materials.

42 ENGINEERING↗
DOE OSTI2015

Improved performance in GaInNAs solar cells by hydrogen passivation

The effect of UV-activated hydrogenation on the performance of GaInNAs solar cells is presented. A proof-of-principle investigation was performed on non-optimum GaInNAs cells, which allowed a clearer investigation of the role of passivation on the intrinsic nitrogen-related defects in these materials. Upon optimized hydrogenation of GaInNAs, a significant reduction in the presence of defect and impurity based luminescence is observed as compared to that of unpassivated reference material. This improvement in the optical properties is directly transferred to an improved performance in solar cell operation, with a more than two-fold improvement in the external quantum efficiency and short circuit current density upon hydrogenation. Temperature dependent photovoltaic measurements indicate a strong contribution of carrier localization and detrapping processes, with non-radiative processes dominating in the reference materials, and evidence for additional strong radiative losses in the hydrogenated solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗