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At least 901 records · Page 50

Tungsten oxide nanostructures and nanocomposites for photoelectrochemical water splitting

Hydrogen production from photoelectrochemical (PEC) water splitting using semiconductor photocatalysts has attracted great attention to realize clean and renewable energy from solar energy. The visible light response of WO 3 with a long hole diffusion length (~150 nm) and good electron mobility (~12 cm 2 V –1 s –1 ) makes it suitable as the photoanode. Yet, WO 3 suffers from issues including rapid recombination of photoexcited electron–hole pairs, photo-corrosion during the photocatalytic process due to the formation of peroxo-species, sluggish kinetics of photogenerated holes, and slow charge transfer at the semiconductor/electrolyte interface. Our report highlights the approaches to overcome these drawbacks of WO 3 photoanodes, including: (i) the manipulation of nanostructured WO 3 photoanodes to decrease the nanoparticle size to promote hole migration to the WO 3 /electrolyte interface which benefits the charge separation; (ii) doping or introducing oxygen vacancies to improve electrical conductivity; exposing high energy crystal surfaces to promote the consumption of photogenerated holes on the high-active crystal face, thereby suppressing the recombination of photogenerated electrons and holes; (iii) decorating with co-catalysts to reduce the overpotential which inhibits the formation of peroxo-species; (iv) other methods such as coupling with narrow band semiconductors to accelerate the charge separation and controlling the crystal phase via annealing to reduce defects. These methods are reviewed with detailed examples.

08 HYDROGEN↗

Microstructural Development of Directionally Solidified Hg(1-x)Zn(x)Se Alloys

Hg(1-x)Zn(x)Se alloys have been studied as an alternative to HgCdTe for the detection of electromagnetic radiation, because the shorter ZnSe and HgSe bonds were predicted to improve lattice stability. Previous studies showed that optical properties were stable with time and that the microhardness was higher than for HgTe based alloys. However, for this material to be commercially viable, compositional variations must be reduced, and the distribution of defects induced by the growth process must be understood. The basic structural properties of bulk materials were characterized, and dislocation etch pit densities were measured to determine whether the addition of Zn to the HgSe lattice reduced the potential for dislocation formation. Hg(0.9)Zn(0.1)Se alloys were directionally solidified using a modified Bridgman-Stockbarger method and in an applied magnetic field. Radial compositional variations were greatly reduced when solidification occurred in an applied magnetic field. The combination of a convex liquid-solid interface shape and a method for reduced wetting produced boules that were a single crystal after reaching full diameter. Observed surface features indicated ampoule wetting could be eliminated using a graphite getter. Microstructural characteristics were greatly improved over HgCdTe alloys, In six boules, a total of only one twin was observed, and no inclusions were found. A method for polishing and producing dislocation etch pits was developed for these alloys, revealing dislocation etch pit densities one to two orders of magnitude less than HgTe based alloys. A kink in the thermal profile during processing of one boule generated more dislocations than did lattice mismatch due to compositional variations. The results of this investigation indicate this alloy has improved microstructural properties and resistance to dislocation formation compared with similar II-VI alloys, and should be further investigated for the detection of electromagnetic radiation.

Cobb, S. D.↗

Interface properties of various passivations of HgCdTe

The effects of different surface treatments of the p-type Hg(x-1)Cd(x)Te (x about 0.2) alloy, including anodic-sulfide, anodic-oxide, and ZnS coatings, on the surface charge density and surface mobility were investigated. Measurements of surface recombination velocities in samples passivated by either a ZnS coating on a freshly etched surface or by anodic native sulfide combined with deposited ZnS showed essentially the same temperature dependence down to 50 K. For the same original material, both the surface state density and the activation energy were found to be similar. It is suggested that, for both passivations, the surface is controlled by traps that can be related to lattice defects, such as vacancies.

Schacham, S. E.↗

GPAW: An open Python package for electronic structure calculations

We review the GPAW open-source Python package for electronic structure calculations. GPAW is based on the projector-augmented wave method and can solve the self-consistent density functional theory (DFT) equations using three different wave-function representations, namely real-space grids, plane waves, and numerical atomic orbitals. The three representations are complementary and mutually independent and can be connected by transformations via the real-space grid. This multi-basis feature renders GPAW highly versatile and unique among similar codes. By virtue of its modular structure, the GPAW code constitutes an ideal platform for the implementation of new features and methodologies. Moreover, it is well integrated with the Atomic Simulation Environment (ASE), providing a flexible and dynamic user interface. In addition to ground-state DFT calculations, GPAW supports many-body GW band structures, optical excitations from the Bethe–Salpeter Equation, variational calculations of excited states in molecules and solids via direct optimization, and real-time propagation of the Kohn–Sham equations within time-dependent DFT. A range of more advanced methods to describe magnetic excitations and non-collinear magnetism in solids are also now available. In addition, GPAW can calculate non-linear optical tensors of solids, charged crystal point defects, and much more. Recently, support for graphics processing unit (GPU) acceleration has been achieved with minor modifications to the GPAW code thanks to the CuPy library. We end the review with an outlook, describing some future plans for GPAW.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Evaluation of Solid Modeling Software for Finite Element Analysis of Woven Ceramic Matrix Composites

Three computer programs, used for the purpose of generating 3-D finite element models of the Repeating Unit Cell (RUC) of a textile, were examined for suitability to model woven Ceramic Matrix Composites (CMCs). The programs evaluated were the open-source available TexGen, the commercially available WiseTex, and the proprietary Composite Material Evaluator (COMATE). A five-harness-satin (5HS) weave for a melt-infiltrated (MI) silicon carbide matrix and silicon carbide fiber was selected as an example problem and the programs were tested for their ability to generate a finite element model of the RUC. The programs were also evaluated for ease-of-use and capability, particularly for the capability to introduce various defect types such as porosity, ply shifting, and nesting of a laminate. Overall, it was found that TexGen and WiseTex were useful for generating solid models of the tow geometry; however, there was a lack of consistency in generating well-conditioned finite element meshes of the tows and matrix. TexGen and WiseTex were both capable of allowing collective and individual shifting of tows within a ply and WiseTex also had a ply nesting capability. TexGen and WiseTex were sufficiently userfriendly and both included a Graphical User Interface (GUI). COMATE was satisfactory in generating a 5HS finite element mesh of an idealized weave geometry but COMATE lacked a GUI and was limited to only 5HS and 8HS weaves compared to the larger amount of weave selections available with TexGen and WiseTex.

Nemeth, Noel N.↗

An antisite defect mechanism for room temperature ferroelectricity in orthoferrites

Single-phase multiferroic materials that allow the coexistence of ferroelectric and magnetic ordering above room temperature are highly desirable, motivating an ongoing search for mechanisms for unconventional ferroelectricity in magnetic oxides. Here, we report an antisite defect mechanism for room temperature ferroelectricity in epitaxial thin films of yttrium orthoferrite, YFeO 3 , a perovskite-structured canted antiferromagnet. A combination of piezoresponse force microscopy, atomically resolved elemental mapping with aberration corrected scanning transmission electron microscopy and density functional theory calculations reveals that the presence of Y Fe antisite defects facilitates a non-centrosymmetric distortion promoting ferroelectricity. This mechanism is predicted to work analogously for other rare earth orthoferrites, with a dependence of the polarization on the radius of the rare earth cation. Our work uncovers the distinctive role of antisite defects in providing a mechanism for ferroelectricity in a range of magnetic orthoferrites and further augments the functionality of this family of complex oxides for multiferroic applications.

36 MATERIALS SCIENCE↗

Atom-by-atom imaging of moiré transformations in 2D transition metal dichalcogenides

Understanding the atomic-scale mechanisms that govern the structure of interfaces is critical across materials systems but particularly so for two-dimensional (2D) moiré materials. Here, we image, atom-by-atom, the thermally induced structural evolution of twisted bilayer transition metal dichalcogenides using in situ transmission electron microscopy. We observe low-temperature, local conversion of moiré superlattice into nanoscale aligned domains. Unexpectedly, this process occurs by nucleating a new grain within one monolayer, whose crystal orientation is templated by the other. The aligned domains grow through collective rotation of moiré supercells and hopping of 5|7 defect pairs at moiré boundaries. This provides mechanistic insight into the atomic-scale interactions controlling moiré structures and illustrates the potential to pattern interfacial structure and properties of 2D materials at the nanoscale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Investigating the Role of Copper in Arsenic Doped Cd(Se,Te) Photovoltaics

The open circuit voltage (VOC) deficit in Cd(Se,Te)-based photovoltaics remains a critical obstacle for pushing the technology closer to theoretical performance limits. Arsenic doping has become a dominant and promising route to achieve the higher p-type carrier concentrations necessary for higher VOC, but challenges associated with this alternate defect chemistry and higher doping density have hindered progress. Here we show that while arsenic doping enables high carrier concentrations (>1016 cm-3), co-doping with copper can provide a boost to VOC without a significant change to carrier concentration. A large data set is initially used to explore current-voltage and capacitance-voltage trends associated with arsenic doped devices with and without copper. A smaller subset is then used to probe these trends using a wide variety of characterization techniques. Copper is found to facilitate reduced interface recombination and potentially improved bulk absorber characteristics, though the mechanisms for these improvements are not yet clear. Despite the improved performance of co-doped devices, VOC is still far below its potential especially for highly doped devices. Low emitter doping in conjunction with high absorber doping seems to be a plausible cause for this significant deficit, though other device properties may exacerbate this problem.

CdSeTe↗

Plasma Surface Interactions: Predicting the Performance and Impact of Dynamic PFC Surfaces

The objective of this project is to develop, and integrate, high-performance simulation tools capable of predicting plasma-facing component (PFC) operating lifetime and the impact of the evolving surface morphology of tungsten-based PFCs on plasma contamination, including the dynamic recycling of fuel species and tritium retention, in future magnetic fusion devices. Establishing a fundamental physical understanding and developing predictive capabilities of plasma-surface interactions (PSI) requires simultaneously addressing complex and diverse physics occurring over a wide range of length (Angstroms to meters) and time (femtoseconds to years) scales, as well as integrating extensive physical processes across the plasma–surface interface. This requires development of not only detailed physics models and computational strategies at each scale, but also algorithms and methods to couple them effectively in a way that can be robustly validated. Deploying these tools requires the continued development and coupling of leadership-scale computational codes to describe the boundary plasma and the evolving PFC surface, as well as a host of simulations that bridge disparate scales to address complex physical and computational issues at the plasma–surface interface in multi-component materials systems for magnetic fusion energy development beyond ITER.

36 MATERIALS SCIENCE↗

Instrumentation for Studies of Electron Emission and Charging From Insulators

Making measurements of electron emission properties of insulators is difficult since insulators can charge either negatively or positively under charge particle bombardment. In addition, high incident energies or high fluences can result in modification of a material s conductivity, bulk and surface charge profile, structural makeup through bond breaking and defect creation, and emission properties. We discuss here some of the charging difficulties associated with making insulator-yield measurements and review the methods used in previous studies of electron emission from insulators. We present work undertaken by our group to make consistent and accurate measurements of the electron/ion yield properties for numerous thin-film and thick insulator materials using innovative instrumentation and techniques. We also summarize some of the necessary instrumentation developed for this purpose including fast response, low-noise, high-sensitivity ammeters; signal isolation and interface to standard computer data acquisition apparatus using opto-isolation, sample-and-hold, and boxcar integration techniques; computer control, automation and timing using Labview software; a multiple sample carousel; a pulsed, compact, low-energy, charge neutralization electron flood gun; and pulsed visible and UV light neutralization sources. This work is supported through funding from the NASA Space Environments and Effects Program and the NASA Graduate Research Fellowship Program.

Thomson, C. D.↗

Solution for Predictive Physical Modeling in CdTe and Other Thin-Film PV Technologies

The main goal of this work was to eliminate the ambiguity between the observed performance changes under stress and their physical root cause by enabling a depth of modeling that takes account of diffusion and drift at the atomistic level coupled to the electronic subsystem responsible for a PV device’s function. Development of advanced physical models describing capture/emission/ recombination phenomena relevant to multivalent dopants, amphoteric centers, and donor-acceptor pairs was also accomplished. These models, incorporating grain bulk, grain boundaries, and hetero-interface properties, were implemented in a self-contained simulation tool that drastically reduces interpretation ambiguity and, for the first time, allows for predictive design of thin-film PV devices.

14 SOLAR ENERGY↗

Understanding the influence of defects and surface chemistry on ferroelectric switching: a ReaxFF investigation of BaTiO 3

Ferroelectric materials such as barium titanate (BaTiO 3 ) have a wide range of applications in nano scale electronic devices due to their outstanding properties. In this study, we developed an easily extendable atomistic ReaxFF reactive force field for BaTiO 3 that can capture both its field- and temperature-induced ferroelectric hysteresis and corresponding changes due to surface chemistry and bulk defects. Using our force field, we were able to reproduce and explain a number of experimental observations: (1) the existence of a critical thickness of 4.8 nm below which ferroelectricity vanishes in BaTiO 3 ; (2) migration and clustering of oxygen vacancies (OVs) in BaTiO 3 and a reduction in the polarization and the Curie temperature due to the OVs; (3) domain wall interaction with the surface chemistry to influence the ferroelectric switching and polarization magnitude. This new computational tool opens up a wide range of possibilities for making predictions for realistic ferroelectric interfaces in energy-conversion, electronic and neuromorphic systems.

36 MATERIALS SCIENCE↗

TOF-SIMS analysis of decoherence sources in superconducting qubits

Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. Two-level system defects in the thin superconducting film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated through slight modifications in the processing and vacuum conditions. We find that when the Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species, such as niobium hydrides and carbides, are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impacts the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Investigating the Effect of Lamination on FAMACs: Toward a New Phase Space of Perovskite Solar Cell Fabrication

The rapid progress in the field of perovskite solar cells has led to efficiencies approaching that of crystalline silicon in single junction devices, and increasing emphasis is now being placed on scalable fabrication strategies that have the potential to truly impact the photovoltaics industry. The standard fabrication route of sequential, layer-bylayer depositions to form the device stack is limited by the small range of selective materials that can withstand successive solvent exposures and thermal annealings. In order to overcome this limitation, we have developed a method to fabricate the device stacks through mechanical lamination under moderate pressures and temperatures. The procedure involves fabricating two transparent conductive oxide/transport material/perovskite half stacks and laminating them together at the perovskite/perovskite interface. This procedure previously achieved 10% efficiency in initial attempts based on methyl ammonium lead iodide (MAPI) perovskite compositions. Herein, we reported the fabrication conditions to achieve a reproducible lamination with a complex, multi-cation perovskite, [Cs0.05(MA0.17F A0.83)0.95P b(I0.83Br0.17)3] (FAMACs), laminated at 18 degrees C and with a pressure of 350 psi for 30 minutes. The resulting material showed a sharpening of the optical absorption edge and a slight reduction in the band gap from 1.622 eV to 1.616 eV, indicative of improved ordering and reduced defects. Concurrently, time resolved photoluminescence measurements revealed an increased luminescence lifetime from 85 ns to 123 ns.

14 SOLAR ENERGY↗

Measuring the flatband potential in 2D semiconductors: Pitfalls and a possible SECCM solution

The flatband potential (V fb ) is a critical parameter in semiconductor electrochemistry, defining the potential at which no excess charge exists at the semiconductor/electrolyte interface. It serves as a key reference for interpreting charge transfer kinetics and current–voltage behavior. However, conventional methods like Mott–Schottky analysis fail for atomically thin 2D materials due to the breakdown of the depletion approximation. This perspective examines the limitations of traditional V fb measurements for 2D semiconductors and the experimental challenges that arise. To address these issues, we propose using scanning electrochemical cell microscopy (SECCM) to spatially resolve the potential of zero charge (V pzc ), equivalent to V fb . This approach mitigates sample heterogeneity issues, such as pinholes or multilayer defects, and offers a pathway to more accurate electrochemical characterization. Ultimately, this method will enhance understanding of current–potential behavior in 2D materials, supporting the design of advanced systems for photoelectrocatalysis, energy conversion, and sensing.

2D semiconductors↗

Theory and experiments join forces to characterize the electrocatalytic interface

Electrocatalysis is gaining impetus as a key technology in fuel cells and for the medium-term energy storage in the context of intermittent, renewable energy sources such as wind and solar power. Furthermore, electrocatalysis promises to convert rather inert molecules such as CO 2 and N 2 into reduced products such as CO and ammonia under relatively mild conditions (1, 2). Harnessing the full power of electrocatalysis is, however, hampered by a lack of understanding of the governing physical and chemical processes at the metal–electrolyte interface. In PNAS, Cheng et al. (3) bring key insight to the characterization of reaction intermediates during CO 2 electroreduction via firstprinciples molecular dynamics modeling. This reaction is timely and has, over the last few years, served as the playground for advanced atomistic modeling of electrocatalysis (4–9).

25 ENERGY STORAGE↗

Low-cost, high-efficiency III-V photovoltaics enabled by remote epitaxy through graphene (Final Technical Report)

One of the most important outcomes of this project was that the team developed a method to directly grow graphene layer in wafer-scale on III-V substrates. Conventionally, graphene had to be transferred for remote epitaxy, which has imposed significant challenges in scalability, film quality, and substrate recycling, due to the transfer-related issues. The newly developed method of directly forming 2D layers by Metal-Organic Chemical Vapor Deposition (MOCVD) has realized wafer-scale, defect-free graphene formation for remote epitaxy, which has huge implications not only for solar cells but also in expanding the scalability and the possibility for heterointegration with dissimilar material platforms. Another important outcome was on better understanding of remote epitaxy mechanism. The growth of III-V on graphene is vastly different from directly growing films on III-V substrates, because the surface energy of graphene is very small, meaning that the nucleation density on graphene will be much lower than exposed III-V surfaces. Also, the graphene and the interface properties critically affect remote interaction through graphene. With this obtained knowledge regarding III-V remote epitaxy, we were able to achieve wafer-scale single-crystalline remote epitaxy, 100% exfoliation of the remote epitaxial films, as well as multiple times of GaAs wafer reusability demonstration. The general rule of thumbs found during this project will be a stepping stone for the growth and fabrication of various high-performance devices by remote epitaxy. Lastly, because remote epitaxy and 2DLT offer a pathway to isolate single-crystal membranes from the host wafers, the wafer-scale remote epitaxy processes developed in this project could open up pathways for new functionality and multi-functionality by heterointegration of remote epitaxially formed membranes.

14 SOLAR ENERGY↗

Scalable Synthesis of the Transparent Conductive Oxide SrVO 3

The correlated metal SrVO 3 is an attractive earth-abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated-electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A route to synthesize low-defect SrVO 3 films by scalable, industry-compatible molecular beam epitaxy (MBE) is demonstrated. The resulting films consistently exhibit a residual resistivity ratio in the excess of 10 and room temperature resistivity as low as 32 µΩ cm, an indication of their high quality and potential for applications. Analysis of the structural and electronic properties of SrVO 3 films provides insights that are applicable to other conductive oxides, and highlights a route for further improvement in their quality and low temperature performance. MBE is the only growth method that allows atomically abrupt epitaxial interfaces between oxides and semiconductors such as Si and GaAs. Such interfaces are essential for efficient charge transport that is at the heart of the performance of most optoelectronic and solar devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗