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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

TRAPATT oscillations in a p-i-n avalanche diode

P-i-n avalanche diode trapped plasma avalanche triggered transit /TRAPATT/ oscillations characteristics and voltage waveform under square wave driving current, using computer program

Parker, D.↗
NASA NTRS1972

Temperature compensation of light-emitting diodes

Circuit which includes a thermistor-resistor combination to compensate for temperature fluctuations by supplying input voltage to light-emitting diode, maintains constant light output. Similar circuits can be used for temperature-induced variations in photodiode applications.

Deboo, G. J.↗
NASA NTRS1972

Diode-quad bridge for reactive transducers and FM discriminators

Diode-quad bridge circuit was developed for use with pressure-sensitive capacitive transducers, liquid-level measuring devices, proximity deflection sensors, and inductive displacement sensors. It may also be used as FM discriminator and as universal impedance bridge.

Harrison, D. R.↗
NASA NTRS1972

Computer acquired performance data from an etched-rhenium, molybdenum planar diode

Performance data from an etched-rhenium, molybdenum thermionic converter are presented. The planar converter has a guard-ringed collector and a fixed spacing of 0.254 mm (10 mils). The data were acquired by using a computer and are available on microfiche as individual or composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E, collector T sub C and cesium reservoir T sub R. The composite plots have constant T sub E, and varying T sub C or T sub R, or both. The envelope and composite plots having constant I sub E are presented. The diode was tested at increments between 1500 and 2000 K for the emitter, 750 and 1100 K for the collector, and 540 and 640 K for the reservoir. In all, 774 individual current, voltage curves were obtained.

Manista, E. J.↗
NASA NTRS1972

Development and fabrication of insulator seals for thermionic diodes

Eight different types of cermet seals for thermionic diodes were investigated: (1) 1 micron Al2O3 with Nb spheres; (2) 200 A Al2O3 with Nb spheres; (3) 1 micron Al2O3 with Nb 1% Zr spheres; (4) 200 A Al2O3 with Nb 1% Zr spheres; (5) Pure Y2O3 with Nb 1% Zr spheres; (6) Y2O3 3% ZrO2 with Nb 1% Zr spheres; (7) Y2O3 10% ZrO2 with Nb 1% Zr spheres; and (8) ZrO2 12% Y2O3 with Nb 1% Zr spheres. Investigations were made to determine the most favorable fabrication techniques and the effect of the bonding cycle, (length of bonding time and shutdown sequences). The analysis of the seals included tensile test, vacuum test, electrical test and metallurgical examination. At the conclusion of the development phase, 36 seals were fabricated for delivery for evaluation.

Poirier, V. L.↗
NASA NTRS1972

GaAs IMPATT diodes for microstrip circuit applications.

GaAs IMPATT diodes with plated heat sinks are shown to be particularly well suited for microstrip circuit applications. Details of materials growth and device fabrication procedures are given, and experimental results are presented for a GaAs IMPATT microstrip oscillator operating at X band.

Wisseman, W. R.↗