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At least 901 records · Page 50

Space Launch System Base Heating Test: Tunable Diode Laser Absorption Spectroscopy

This paper describes the Tunable Diode Laser Absorption Spectroscopy (TDLAS) measurement of several water transitions that were interrogated during a hot-fire testing of the Space Launch Systems (SLS) sub-scale vehicle installed in LENS II. The temperature of the recirculating gas flow over the base plate was found to increase with altitude and is consistent with CFD results. It was also observed that the gas above the base plate has significant velocity along the optical path of the sensor at the higher altitudes. The line-by-line analysis of the H2O absorption features must include the effects of the Doppler shift phenomena particularly at high altitude. The TDLAS experimental measurements and the analysis procedure which incorporates the velocity dependent flow will be described.

Parker, Ron↗

Microgap breakdown with floating metal rod perturbations

Here, we report the characterization of microgap breakdown with perturbations from a metal rod floating between anode and cathode electrodes. The effects of the metal rod on the electric field distribution and the field enhancement factor are evaluated by numerical simulation and the conformal mapping method, and they indicate that the field emission regime is not reached. The breakdown voltages in the Townsend discharge regime are determined based on the voltage–current characteristics, which are obtained from two-dimensional fluid simulations. It is found that the breakdown characteristics can be significantly modulated by the floating metal rod, and the breakdown curve (breakdown voltage vs the net gap distance) is no longer U-shaped, which deviates from the conventional Paschen's law. The underlying physical mechanisms are related to the electric field enhancement, curved breakdown path, and nonuniform ion flux caused by the electric shielding effect. The results provide insights into breakdown characteristics in microscale discharges, which may promote conventional investigation of simplified clean gaps toward more complex conditions (e.g., with floating microparticles) in miniaturized plasma devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Multichannel Fiber-Optic Silicon Fabry–Pérot Interferometric Bolometer System for Plasma Radiation Measurements

A single-channel fiber-optic bolometer system based on a high-finesse silicon Fabry–Pérot interferometer (FPI) was previously reported, intended to measure plasma radiation from the magnetically confined fusion chamber. Recently, we developed a multichannel fiber-optic bolometer system with five bolometers multiplexed using a coarse wavelength division multiplexer (CWDM) and interrogated with a white-light system involving a superluminescent light-emission diode source and a high-speed spectrometer. One of the bolometers was used as the reference bolometer to compensate for the ambient temperature variations, and the other four bolometers were used for radiation measurement. The bolometers have a simple structure with a silicon pillar at the end of the single-mode fiber and a gold disk on the other side of the silicon pillar. They are also easy to fabricate without stringent requirements on the optical alignment. Analysis of the system optimization was performed to improve the noise performance and to mitigate the vibration effect that may present in the practical application. The system had a significantly enhanced measurement range compared to the previous high-finesse FPI bolometer system for measuring radiation. Test results performed in air using a 405 nm laser as the radiation source showed that the temperature resolution and the noise-equivalent power density of the sensing bolometers connected to each channel of the CWDM were, respectively, ~0.4 mK and ~0.1 W/m2, with a time constant of ~220 ms, which is comparable to the previous more complicated fiber-optic bolometer systems based on high-finesse FPIs that were interrogated using wavelength-scanning lasers.

Uddin, Nezam↗

Sunspot bright rings and the thermal diffusivity of solar convection

Raster-scan observations of 10 sunspots, made in 1980 and 1981 with the 512-channel diode array and vacuum telescope at the Kitt Peak National Observatory, are reported. Data from several 10-min scans of 0.25-A passbands of clean continuum were summed to give an rms noise level of 0.25 percent, corrected by applying a limb-darkening curve, and analyzed to determine the average intensity for each of eight segments of a series of concentric rings around each sunspot. Faculae and pores were identified and discarded in constructing radial intensity profiles. Marginally significant bright symmetric rings (peak amplitude 0.1-0.3 percent) not attributable to residual facular signal or instrumental effects were observed around 6 of 10 sunspots. No evidence of more intense bright rings was found. These findings are discussed in terms of thermal-diffusion models proposed to explain the fate of the radiative flux blocked by sunspots.

Duvall, T., Jr.↗

Flight Testing of a Cryogenic Capillary Pumped Loop

Future space-based cryogenic systems will require enhanced integration flexibility, lower weight reduced parasitic penalties, better vibration isolation, and a variety of other improvements to meet performance goals. Additionally, there is an increasing need to locate cooling sources remotely from cooled components. In the past flexible conductive links were used and worked well in most cases. However, as the transport lengths increase, conductive couplings become heavier and less effective, and must be replaced by higher performance systems. One available option, which can meet many of these future requirements, is the cryogenic capillary pumped loop (CCPL). The development of the CCPL technology started in 1992, following the success of the room temperature CPLS. The extrapolation of CCPL technology to cryogenic temperatures offers many performance benefits, which are not currently within the reach of traditional heat pipes or conductive links. Specific advantages of the CCPL technology pertaining to cryocooler integration include: (1) greater capillary pumping pressure for improved ground testability; (2) improved mechanical isolation; (3) faster diode shutdown and lower reverse heat leaks; (4) tighter control of detector temperature; (5) variable or fixed conductance operation; and (6) ease of integration due to their flexibility. The applications of CCPL technology are numerous. Military and commercial applications include surveillance satellites, earth observing satellites, deep space observation systems, medical devices, and many other cryogenic systems. Over the past few years, several breadboard and prototype CCPLs have been built and ground tested. A prototype CCPL has demonstrated successful operation between 80K and 110K with heat loads between O.5W and 12W using nitrogen as the working fluid, and 35K and 40K with head loads of 0.25W to 3.5W using neon. In order to verify CCPL performance in a microgravity environment, a flight unit, CCPL-5, was tested onboard the Space Shuttle STS-95 in October of 1998 as part of the CRYOTSU Flight Experiment. This flight was the first in-space demonstration of the CCPL. The CCPL-5 utilized nitrogen as the working fluid and operated between 75K and 110K. Flight results indicated excellent performance of the CCPL-5 under zero-G environment The CCPL could start from a supercritical condition in all tests, and the loop operating temperature could be tightly controlled regardless of changes in the heat load and/or the sink temperature. In addition, the loop demonstrated successful operation with a heat load of 0.5W as well as with parasitic heat loads alone. There were no noticeable differences between zero-G and one-G operation.

Ku, Jentung↗

Circuit and Method for Communication Over DC Power Line

A circuit and method for transmitting and receiving on-off-keyed (OOK) signals with fractional signal-to-noise ratios uses available high-temperature silicon- on-insulator (SOI) components to move computational, sensing, and actuation abilities closer to high-temperature or high-ionizing radiation environments such as vehicle engine compartments, deep-hole drilling environments, industrial control and monitoring of processes like smelting, and operations near nuclear reactors and in space. This device allows for the networking of multiple, like nodes to each other and to a central processor. It can do this with nothing more than the already in-situ power wiring of the system. The device s microprocessor allows it to make intelligent decisions within the vehicle operational loop and to effect control outputs to its associated actuators. The figure illustrates how each node converts digital serial data to OOK 18-kHz in transmit mode and vice-versa in receive mode; though operations at lower frequencies or up to a megahertz are within reason using this method and these parts. This innovation s technique modulates a DC power bus with millivolt-level signals through a MOSFET (metal oxide semiconductor field effect transistor) and resistor by OOK. It receives and demodulates this signal from the DC power bus through capacitive coupling at high temperature and in high ionizing radiation environments. The demodulation of the OOK signal is accomplished by using an asynchronous quadrature detection technique realized by a quasi-discrete Fourier transform through use of the quadrature components (0 and 90 phases) of the carrier frequency as generated by the microcontroller and as a function of the selected crystal frequency driving its oscillator. The detected signal is rectified using an absolute-value circuit containing no diodes (diodes being non-operational at high temperatures), and only operational amplifiers. The absolute values of the two phases of the received signal are then summed and hard limited (digitized) by comparing them to a reference level and are then input into a microprocessor as a serial bit stream. The quasi-discrete Fourier transform is performed in high-temperature components (operational amplifiers, analog switches, resistors, and capacitors). The demodulated signal is a serial data stream that is input to the UART (universal asynchronous receiver transmitter) receiver pin of the microprocessor. The OOK of the carrier frequency uses the output of the UART pin as an enabling signal that drives the gate of the MOSFET. Logic low bits enable the carrier frequency (realized by using the 0 phase signal from the microcontroller, though either phase may be used) to be DC-coupled to the power supply bus through a current-limiting resistor mounted between the MOSFET drain and the supply rail. The presence of logic lows on the power supply rail is realized by carrier bursts while logic highs are realized by the absence of bursts.

Krasowski, Michael J.↗

Switched-beam radiometer front-end network analysis

The noise figure performance of various delay-line networks fabricated from microstrip lines with varying number of elements was investigated using a computer simulation. The effects of resistive losses in both the transmission lines and power combiners were considered. In general, it is found that an optimum number of elements exists, depending upon the resistive losses present in the network. Small resistive losses are found to have a significant degrading effect upon the noise figure performance of the array. Extreme stability in switching characteristics is necessary to minimize the nondeterministic noise of the array. For example, it is found that a 6 percent tolerance on the delay-line lengths will produce a 0.2 db uncertainty in the noise figure which translates into a 13.67 K temperature uncertainty generated by the network. If the tolerance can be held to 2 percent, the uncertainty in noise figure and noise temperature will be 0.025 db and 1.67 K, respectively. Three phase shift networks fabricated using a commercially available PIN diode switch were investigated. Loaded-line phase shifters are found to have desirable RF and noise characteristics and are attractive components for use in phased-array networks.

Trew, R. J.↗

Comparative Soot Diagnostics: Preliminary Results

The motivation for the Comparative Soot Diagnostics (CSD) experiment lies in the broad practical importance of understanding combustion generated particulate. Depending upon the circumstances, particulate matter can affect the durability and performance of combustion equipment, can be a pollutant, can be used to detect fires and, in the form of soot, can be the dominant source of radiant energy from flames. The nonbuoyant structure of most flames of practical interest makes understanding of soot processes in low gravity flames important to our ability to predict fire behavior on earth. These studies also have direct applications to fire safety in human-crew spacecraft, since smoke is the indicator used for automated detection in current spacecraft. In the earliest missions (Mercury, Gemini and Apollo), the crew quarters were so cramped that it was considered reasonable that the astronauts would rapidly detect any fire. The Skylab module, however, included approximately 20 UV-sensing fire detectors. The Space Shuttle has 9 particle-ionization smoke detectors in the mid-deck and flight deck and Spacelab has six additional particle-ionization smoke detectors. The designated detectors for the ISS are laser-diode, forward-scattering, smoke or particulate detectors. Current plans for the ISS call for two detectors in the open area of the module, and detectors in racks that have both cooling air flow and electrical power. Due to the complete absence of data concerning the nature of particulate and radiant emission from incipient and fully developed low-g fires, all three of these detector systems were designed based upon l-g test data and experience. As planned mission durations and complexity increase and the volume of spacecraft increases, the need for and importance of effective, crew-independent, fire detection grows significantly. To provide this level of protection, more knowledge is needed concerning low-gravity fire phenomena and, in particular, how they might be detected and suppressed. Prior to CSD, no combustion-generated particulate samples had been collected near the flame zone for well-developed microgravity flames. All of the extant data either came from drop tower tests and therefore only corresponded to the early stages of a fire or were collected far from the flame zone. The fuel sources in the drop tower tests were restricted to laminar gas-jet diffusion flames and very rapidly overheated wire insulation. The gas-jet tests indicated, through thermophoretic sampling, (2) that soot primaries and aggregates (groups of primary particles) in low-gravity may be significantly larger than those in normal gravity (1-g). This raises new scientific questions about soot processes as well as practical issues for particulate size sensitivity and detection alarm threshold levels used in on-orbit smoke detectors. Preliminary tests in the 2.2 second drop tower suggest that particulate generated by overheated wire insulation may be larger in low-g than in 1-g. Transmission Electron Microscope (TEM) grids downstream of the fire region in the Wire Insulation Flammability experiment as well as visual observation of long string-like aggregates, further confirm this suggestion. The combined impact of these limited results and theoretical predictions is that, as opposed to extrapolation from l-g data, direct knowledge of low-g combustion particulate is needed for more confident design of smoke detectors for spacecraft. This paper describes the operation and preliminary results of the CSD, a project conceived and developed at NASA Lewis Research Center. The CSD flight experiment was conducted in the Middeck Glovebox Facility (MGBX) on USMP-3. The project is support by NASA Headquarters Microgravity Science and Applications Division and Code Q. The results presented here are from the microgravity portion of the experiment, including the temporal response of the detectors and average sizes of the primary and aggregate particles captured on the thermophoretic probes.

Urban, David L.↗

Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

Here, we report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top p-Ga N layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately 3 × 10 8 cm -2 , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker p-GaN filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low In content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Manufacturable Corrugated Substrates for High Efficiency Organic Light-Emitting Diodes (OLEDs)

In this project, we start with optical simulation of an OLED to have a basic understanding of the mode dispersion inside the device. We first fabricated 1-D photonic crystals’ (PhCs) for corrugated green OLED devices observed enhanced EQE from 20% to 27%, which has the drawbacks of angular color shift. To resolve this issue, we fabricated poly crystalline PhCs (poly PhC) devices and observed alleviated angular color shift. The outcoupling efficiency is enhanced from 30% to 35%, which can be further enhanced to 60% by extracting the substrate mode. To further enhance the efficiency, we used RCWA (rigorous coupled-wave analysis) simulation to study the optical property in the corrugated device. We found out the corrugation reduces the reflectance of the Al cathode, lowers the cavity resonance and weakens the cavity emission. To preserve the cavity effect, we insert a low index Teflon layer (n = 1.3) between the ITO anode and the corrugated substrate, which increased the index contrast and hence the reflectance of the bottom electrode. As a result, the corrugated OLED with a Teflon layer shows a maximum outcoupling efficiency of 75%.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions

In this work, ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes has been produced, CdS and CZTS thin film layers of the diode have been produced on ITO glass at room temperature using PLD technique. It has been produced CZTS thin films that have a polycrystalline structure that were annealed at the sulfurization temperatures of 325 °C, 350 °C and 375 °C when as-grown CZTS thin film has the amorphous structure. CdS thin films have been grown on substrate at room temperature in 15, 20 and 25 min that have polycrystalline structures. Then, CdS thin film deposited for 20 min was annealed at 200 °C temperature and, has better crystal structure compared to other thin films. Diodes have been composed of CZTS thin film annealed in 375 °C, CdS thin film was grown during 20 min and, then annealed at 200 °C temperature. According to J–V characteristics of diode, diodes exhibit some rectification behaviour in dark and show a photo-electric property under illumination conditions. In this article, the ideality factors of diodes in dark condition have been calculated, their electrical parameters of J{sub sc}, V{sub oc}, FF and η under the illumination condition have been determined and these electrical properties have been discussed in details.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Dopant Sensitive Electrolytic Etching of Germanium with High Selectivity

Abstract The enhanced charge carrier mobility and photon absorption compared to silicon make germanium attractive for next-generation photo diodes. However, the complex oxidation behavior of germanium challenges dopant-dependent selective etching that is desired for the fabrication of backside imaging architectures. This report demonstrates electrolytic wet etching of p-doped germanium which proceeds up to 17,500x faster than etching of intrinsic germanium. Homoepitaxially grown layers of germanium were electrolytically etched in potassium hydroxide over a range of biases. Intermittent acquisition of cyclic voltammetry spectra during etching has suppressed the formation of electric double layers, maintained appreciable etch rates, and allowed for in operando process control. The observed etch rates scaled with dopant concentration. An effective etch rate of germanium removal of 2.100±0.044 µm/min was accomplished for a boron dopant concentration of 6E18cm-3. For nominally intrinsic germanium, however, an effective etch rate of only 0.00012±0.00011 µm/min was observed. A series of systematic electrolytic etch experiments have revealed the transfer of 4 electrons per germanium atom removed.

Wood, Joseph G.↗

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

Neugroschel, A.↗

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗

Aging Effect Analysis of PV Inverter Semiconductors for Ancillary Services Support

PV inverters can provide reactive power while generating active power. An ongoing microgrid implementation at Duke Energy actively engages non-utility PVs to generate/absorb reactive power in support of ancillary services to increase microgrid resiliency during extreme events. PV systems are requested to provide reactive power support: 1) in response to grid voltage variation to better regulate the local voltage; or 2) in response to utility incentives, such as following Transactive Energy System (TES) incentives. However, providing ancillary services might shorten the lifetime expectation of PV inverter semiconductors. This paper summarizes the potential impacts on a PV inverter semiconductor's lifetime when providing ancillary services. The analysis presented in this research work shows that providing reactive power support will increase the mean junction temperature and the junction temperature variation of the inverter diodes. This increased junction temperature will eventually lead to shorter diode lifetime. The lifetime estimation of semiconductors is briefly reviewed. The power losses of PV inverter semiconductors are derived as a support analysis to the junction temperature calculation. In addition, the impact of the filtering inductor on the semiconductor current distribution is discussed. The theoretical analysis presented in this research work is supported by simulation results.

14 SOLAR ENERGY↗

Temperature characteristics of silicon space solar cells and underlying parameters

Silicon space cells, 2 cm x 2 cm, with 10 ohm-cm p-base resistivity, 8-mil base thickness, and no back-surface fields have been investigated over the temperature range from 301 to 223 K by measurements of dark forward and reverse current-voltage characteristics and current-voltage relations under illumination. From dark forward bias data, the first and second diode saturation currents, I01 and I02, are determined and hence the base diffusion length and lifetime of minority carriers as functions of temperature. Lifetime increases exponentially with temperature and is explained by a Shockley-Read-Hall model with deep recombination levels 0.245 eV above the valence band. The I02 variation with temperature follows the Sah-Noyce-Shockley-Choo model except at low temperature where extra transitions raise the value above the predicted level. Reverse bias current at low voltage is a thermally assisted tunneling process via deep levels which are observed in base recombination at higher temperatures. The tunneling effects tend to become independent of temperature in the low-temperature region. These results demonstrate the ability to deduce basic parameters such as lifetime from simple measurements and show that back-surface fields offer no advantage at temperatures below 230 K. The analysis also explains the fall in lifetimes observed as the base conductivity increases, attributing it to native defects (perhaps carbon-oxygen-vacancy complexes) rather than the concentration of base dopant.

Anspaugh, B. E.↗

Wide-range continuous tuning of the thermal conductivity of La0.5Sr0.5CoO3-δ films via room-temperature ion-gel gating

Abstract Solid-state control of the thermal conductivity of materials is of exceptional interest for novel devices such as thermal diodes and switches. Here, we demonstrate the ability to continuously tune the thermal conductivity of nanoscale films of La 0.5 Sr 0.5 CoO 3- δ (LSCO) by a factor of over 5, via a room-temperature electrolyte-gate-induced non-volatile topotactic phase transformation from perovskite (with δ ≈ 0.1) to an oxygen-vacancy-ordered brownmillerite phase (with δ = 0.5), accompanied by a metal-insulator transition. Combining time-domain thermoreflectance and electronic transport measurements, model analyses based on molecular dynamics and Boltzmann transport equation, and structural characterization by X-ray diffraction, we uncover and deconvolve the effects of these transitions on heat carriers, including electrons and lattice vibrations. The wide-range continuous tunability of LSCO thermal conductivity enabled by low-voltage (below 4 V) room-temperature electrolyte gating opens the door to non-volatile dynamic control of thermal transport in perovskite-based functional materials, for thermal regulation and management in device applications.

42 ENGINEERING↗

A space debris simulation facility for spacecraft materials evaluation

A facility to simulate the effects of space debris striking an orbiting spacecraft is described. This facility was purchased in 1965 to be used as a micrometeoroid simulation facility. Conversion to a Space Debris Simulation Facility began in July 1984 and it was placed in operation in February 1985. The facility consists of a light gas gun with a 12.7-mm launch tube capable of launching 2.5-12.7 mm projectiles with a mass of 4-300 mg and velocities of 2-8 km/sec, and three target tanks of 0.067 m, 0.53 a m and 28.5 a m. Projectile velocity measurements are accomplished via pulsed X-ray, laser diode detectors, and a Hall photographic station. This facility is being used to test development structural configurations and candidate materials for long duration orbital spacecraft. A summary of test results are also described.

Taylor, Roy A.↗