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NASA NTRS2009

Large-Aperture Membrane Active Phased-Array Antennas

Large-aperture phased-array microwave antennas supported by membranes are being developed for use in spaceborne interferometric synthetic aperture radar systems. There may also be terrestrial uses for such antennas supported on stationary membranes, large balloons, and blimps. These antennas are expected to have areal mass densities of about 2 kg/sq m, satisfying a need for lightweight alternatives to conventional rigid phased-array antennas, which have typical areal mass densities between 8 and 15 kg/sq m. The differences in areal mass densities translate to substantial differences in total mass in contemplated applications involving aperture areas as large as 400 sq m. A membrane phased-array antenna includes patch antenna elements in a repeating pattern. All previously reported membrane antennas were passive antennas; this is the first active membrane antenna that includes transmitting/receiving (T/R) electronic circuits as integral parts. Other integral parts of the antenna include a network of radio-frequency (RF) feed lines (more specifically, a corporate feed network) and of bias and control lines, all in the form of flexible copper strip conductors on flexible polymeric membranes. Each unit cell of a prototype antenna (see Figure 1) contains a patch antenna element and a compact T/R module that is compatible with flexible membrane circuitry. There are two membrane layers separated by a 12.7-mm air gap. Each membrane layer is made from a commercially available flexible circuit material that, as supplied, comprises a 127-micron-thick polyimide dielectric layer clad on both sides with 17.5-micron-thick copper layers. The copper layers are patterned into RF, bias, and control conductors. The T/R module is located on the back side of the ground plane and is RF-coupled to the patch element via a slot. The T/R module is a hybrid multilayer module assembled and packaged independently and attached to the membrane array. At the time of reporting the information for this article, an 8 16 passive array (not including T/R modules) and a 2 4 active array (including T/R modules) had been demonstrated, and it was planned to fabricate and test larger arrays.

Karasik, Boris↗

NASA NTRS2010

Electrically Variable Resistive Memory Devices

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Liu, Shangqing↗

NASA NTRS2010

Electrical Capacitance Volume Tomography with High-Contrast Dielectrics

The Electrical Capacitance Volume Tomography (ECVT) system has been designed to complement the tools created to sense the presence of water in nonconductive spacecraft materials, by helping to not only find the approximate location of moisture but also its quantity and depth. The ECVT system has been created for use with a new image reconstruction algorithm capable of imaging high-contrast dielectric distributions. Rather than relying solely on mutual capacitance readings as is done in traditional electrical capacitance tomography applications, this method reconstructs high-resolution images using only the self-capacitance measurements. The image reconstruction method assumes that the material under inspection consists of a binary dielectric distribution, with either a high relative dielectric value representing the water or a low dielectric value for the background material. By constraining the unknown dielectric material to one of two values, the inverse math problem that must be solved to generate the image is no longer ill-determined. The image resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. The cuboid geometry of the system has two parallel planes of 16 conductors arranged in a 4 4 pattern. The electrode geometry consists of parallel planes of copper conductors, connected through custom-built switch electronics, to a commercially available capacitance to digital converter. The figure shows two 4 4 arrays of electrodes milled from square sections of copper-clad circuit-board material and mounted on two pieces of glass-filled plastic backing, which were cut to approximately square shapes, 10 cm on a side. Each electrode is placed on 2.0-cm centers. The parallel arrays were mounted with the electrode arrays approximately 3 cm apart. The open ends were surrounded by a metal guard to reduce the sensitivity of the electrodes to outside interference and to help maintain the spacing between the arrays. Other uses for this innovation potentially include quantifying the amount of commodity remaining in the fuel and oxidizer tanks while on-orbit without having to fire spacecraft engines. Another orbit application is moisture sensing in plant-growth experiments because microgravity causes moisture in soil to distribute itself in unusual ways. At the moment, the hardware and image reconstruction technique may only be of interest to people involved in nondestructive evaluation. The reconstructed image takes almost a full week to reproduce with existing computer power. However, because computer power and speeds follows Moore s Law, execution times are likely to become acceptable within the next five to eight years. The code was written in Mathematica for dedicated use with the ECVT system. In its present form, it is not suitable to be used directly as a consumer product. However, the code could be likely improved by rewriting it in a compiled language such as C or Fortran.

Nurge, Mark↗

NASA NTRS2007

Aperture-Coupled Thin-Membrane L-Band Antenna

The upper part of the figure depicts an aperture-coupled L-band antenna comprising patterned metal conductor films supported on two thin polyimide membranes separated by an air gap. In this antenna, power is coupled from a microstrip line on the lower surface of the lower membrane, through a slot in a metal ground plane on the upper surface of the lower membrane, to a radiating metal patch on the upper surface of the upper membrane. The two-membrane configuration of this antenna stands in contrast to a three-membrane configuration heretofore considered as the basis for developing arrays of dual-polarization, wideband microwave antennas that could be thin and could be, variously, incorporated into, or supported on, thin structures, including inflatable structures. By reducing the number of membranes from three to two, the present design simplifies the problems of designing and fabricating such antennas or arrays of such antennas, including the problems of integrating such antennas or arrays with thin-membrane-mounted transmit/ receive modules. In addition, the use of aperture (slot) coupling eliminates the need for rigid coaxial feed pins and associated solder connections on thin membranes, making this antenna more mechanically reliable, relative to antennas that include coaxial feed pins. This antenna is designed for a nominal frequency of 1.26 GHz. The polyimide membranes are 0.05 mm thick and have a relative permittivity of 3.4. The radiating patch is square, 8.89 cm on each side. This radiating patch lies 1.27 cm above the ground plane. The feeding microstrip line is 0.12 mm wide and has a characteristic impedance of 50 . The aperture-coupling slot, etched in the ground plane, is 0.48 mm wide and 79.5 mm long. In order to maximize coupling, the microstrip line is extended beyond the middle of the slot by a length of 36 mm, which corresponds to a transmission- line electrical length of about a quarter wavelength. The other end of the microstrip line is transformed to a 50-Ohm coplanar waveguide line, which is used for connection to a transmit/receive module. Some plated-through vias are added to the outer conductors of the coplanar waveguide to suppress parallel-plate modes. The measured and calculated 10-dB-return-loss bandwidth of the antenna is 100 MHz. By eliminating the radiating patch and the upper membrane that supports it, and performing two other simple modifications, one can convert the two-membrane antenna described above to a paper-thin single-membrane antenna, shown in the lower part of the figure. One modification is to increase the slot length to 104.95 mm; the other is to extend the microstrip to 36.68 mm past the middle of the slot. With these modifications, the slot now becomes a half-wavelength radiator with a nearly omnidirectional radiation pattern. In one potential use, such a paper-thin antenna could be pasted on an automobile window to enable omnidirectional communication.

Huang, John↗

NASA NTRS2010

A 311-GHz Fundamental Oscillator Using InP HBT Technology

This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller amount of feedback than the common-emitter design, therefore preserving device gain, and was chosen for the oscillator design. The submillimeter-wave region offers several advantages for sensors and communication systems, such as high resolution and all-weather imaging due to the short-wavelength, and improved communication speeds by access to greater frequency bandwidth. This oscillator circuit is a prototype of the first HBT oscillator operating above 300 GHz. Additional development is necessary to increase the output power of the circuit for radar and imaging applications.

Gaier, Todd↗

NASA NTRS2007

Photonic Bandgap (PBG) Shielding Technology

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Bastin, Gary L.↗

NASA NTRS2010

Integration Assessment of Visiting Vehicle Induced Electrical Charging of the International Space Station Structure

The International Space Station (ISS) undergoes electrical charging in low Earth orbit (LEO) due to positively biased, exposed conductors on solar arrays that collect electrical charges from the space plasma. Exposed solar array conductors predominately collect negatively charged electrons and thus drive the metal ISS structure electrical ground to a negative floating potential (FP) relative to plasma. This FP is variable in location and time as a result of local ionospheric conditions. ISS motion through Earth s magnetic field creates an addition inductive voltage up to 20 positive and negative volts across ISS structure depending on its attitude and location in orbit. ISS Visiting Vehicles (VVs), such as the planned Orion crew exploration vehicle, contribute to the ISS plasma charging processes. Upon physical contact with ISS, the current collection properties of VVs combine with ISS. This is an ISS integration concern as FP must be controlled to minimize arcing of ISS surfaces and ensure proper management of extra vehicular activity crewman shock hazards. This report is an assessment of ISS induced charging from docked Orion vehicles employing negatively grounded, 130 volt class, UltraFlex (ATK Space Systems) solar arrays. To assess plasma electron current collection characteristics, Orion solar cell test coupons were constructed and subjected to plasma chamber current collection measurements. During these tests, coupon solar cells were biased between 0 and 120 V while immersed in a simulated LEO plasma. Tests were performed using several different simulated LEO plasma densities and temperatures. These data and associated theoretical scaling of plasma properties, were combined in a numerical model which was integrated into the Boeing Plasma Interaction Model. It was found that the solar array design for Orion will not affect the ISS FP by more than about 2 V during worst case charging conditions. This assessment also motivated a trade study to determine acceptable plasma electron current levels that can be collected by a single or combined fleet of ISS-docked VVs.

Kramer, Leonard↗

NASA NTRS2011

Characteristics of Planar Monopole Antenna on High Impedance Electromagnetic Surface

This paper presents for the first time measured characteristics of a planar monopole antenna placed directly on a high impedance electromagnetic surface or artificial magnetic conductor (AMC). The return loss and radiation patterns are compared between the antenna in free space, and when placed directly on a perfect electrical conductor (PEC), and on the AMC. The antenna measured in free space has a wide pass band from 3 to 10 GHz. The return loss for the antenna on the PEC is nearly all reflected back and the return loss for the antenna on the AMC has a 10 dB bandwidth from 7.5 to 9.5 GHz. The gain of the antenna in free space, on PEC and on AMC is 1, -12 and 10 dBi, respectively. This indicates that the AMC is working properly, sending all the radiation outward with little loss.

Scardelletti, Maximilian C.↗

NASA NTRS2005

Growing Aligned Carbon Nanotubes for Interconnections in ICs

A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by electron-beam lithography. These and other nanotubes were found to have lengths ranging from 2 to 10 m and diameters ranging from 30 to 200 nm, the exact values of length depending on growth times and conditions and the exact values of diameter depending on the diameters and thicknesses of the catalyst spots. The bottom part of Figure 2 is an SEM of an embedded array of carbon nanotubes after CMP.

Li, Jun↗

NASA NTRS2011

Generalized Fluid System Simulation Program, Version 5.0-Educational

The Generalized Fluid System Simulation Program (GFSSP) is a finite-volume based general-purpose computer program for analyzing steady state and time-dependent flow rates, pressures, temperatures, and concentrations in a complex flow network. The program is capable of modeling real fluids with phase changes, compressibility, mixture thermodynamics, conjugate heat transfer between solid and fluid, fluid transients, pumps, compressors and external body forces such as gravity and centrifugal. The thermofluid system to be analyzed is discretized into nodes, branches, and conductors. The scalar properties such as pressure, temperature, and concentrations are calculated at nodes. Mass flow rates and heat transfer rates are computed in branches and conductors. The graphical user interface allows users to build their models using the point, drag and click method; the users can also run their models and post-process the results in the same environment. The integrated fluid library supplies thermodynamic and thermo-physical properties of 36 fluids and 21 different resistance/source options are provided for modeling momentum sources or sinks in the branches. This Technical Memorandum illustrates the application and verification of the code through 12 demonstrated example problems.

Majumdar, A. K.↗

NASA NTRS2011

Generalized Fluid System Simulation Program, Version 5.0-Educational. Supplemental Information for NASA/TM-2011-216470

Majumdar, A. K.↗

NASA NTRS2008

An Investigation of the Electrical Short Circuit Characteristics of Tin Whiskers

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has a currently unknown probability associated with it. Due to contact resistance electrical shorts may not occur at lower voltage levels. In this experiment, we study the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From this data we can estimate the probability of an electrical short, as a function of voltage, given that a free tin whisker has bridged two adjacent exposed electrical conductors. Also, three tin whiskers grown from the same Space Shuttle Orbiter card guide used in the aforementioned experiment were cross-sectioned and studied using a focused ion beam (FIB). The rare polycrystalline structure seen in the FIB cross section was confirmed using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size to determine that the tin plating on the card guides had a bright finish.

Courey, Karim J.↗

NASA NTRS2004

AIN-Based Packaging for SiC High-Temperature Electronics

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Savrun, Ender↗

NASA NTRS2011

Lockout/Tagout (LOTO) Simulator

The Lockout/Tagout (LOTO) Simulator is a portable training aid, or demonstration tool, designed to physically illustrate real-time critical-safety concepts of electrical lockout/tagout. The objective is to prevent misinterpretations of what is off and what is on during maintenance and repair of complex electrical systems. The simulator is designed in the form of a hinged box that opens up and stands on its own as an easel for demonstrations. On the outer face of the unit is a simulated circuit breaker box housing the switches. The breakers control the main power to the unit, a light bulb, and an electrical control cabinet. The light bulb is wired so that either of two breakers can provide power to it. When power is sent to the electrical control cabinet, a red indicator light illuminates. Inside the cabinet is the power supply from a personal computer. The power supply produces a 12-V dc output that is sent over to a small fan next to it, also from a computer, and an amber light on the front of the cabinet illuminates. A separate switch powers the fan on and off. The power supply is behind a plastic shield to protect against exposure to live conductors. Electrical banana jacks are mounted in the plastic shield to allow a voltmeter to be connected safely when opening the cabinet and taking a meter reading to verify de-energization as part of a simulation exercise. This LOTO simulator prototype is designed and fabricated as an all-in-one unit. All accessories can be stored inside the hinged case, and there is a handle on top for ease of transport. The circuit breaker labels attach with hook and loop fasteners so that they may be moved and changed to fit the training or demonstration scenario. The warning signs and labels on the electrical control box are magnetic, allowing for easy reconfiguration to emulate different equipment setups. A specially designed magnetic cover was made to disguise the indicator lights for demonstrations when these indicators are not used. The cover is disguised as an arc flash safety label that would typically be found on such a cabinet. One indicator light has a separate switch that can take it offline. This is to allow for demonstration to trainees on why it is important not to completely rely on indicator lights, but that they should always take a meter reading at the exposed conductors to absolutely verify de-energization before exposure. A clear plastic barrier and banana jacks inside the cabinet provide a safe way to plug in a voltmeter for demonstrations without exposure to the hazards of energized equipment. A small remote control unit is wired into the fan circuit. The remote allows the demonstrator to turn the fan on and off, provided that all of the breakers and switches leading to it are configured on as well. The remote feature was added in order to demonstrate the importance of starting the lockout/tagout task with energized equipment, then powering it down, isolating it, and locking it out to ensure that the correct breakers have been locked out.

Scheer, Jennifer↗

NASA NTRS2011

Charging and Subsequent Dissipation of a Rover Wheel in the Lunar Polar Regions

As a roving vehicle moves along the lunar surface, electric charge will build up through tribo-charging. This charge collected by the roving object will have a dissipative path to either the surface or the ambient plasma, depending upon which path is most conductive. At the lunar terminator region and into nightside regions, the surface is very cold and becomes a very poor conductor. leaving the plasma as the dominant remediating current for dissipation. However, within lunar craters, even plasma currents become substantially reduced which then greatly increases electric 'dissipation times, This work will involve the advancement of the stepping astronaut charge model, by considering the charging and plasma dissipation of a rolling rover wheel, The objective of this work is to determine the nature of charging and discharging for a rover wheel as it rolls along the cold, plasma-starved lunar polar regions. The rotating wheel accumulates charge via contact electrification (tribo-charging) with the lunar regolith. This tribo-charging is dependent on the composition of the objects in contact, with insulators and conductors charging differently. Given the environmental plasma in the region, we then determine the dissipation time for the wheel to bleed off its excess charge into the surrounding plasma. A model of the rover wheel rotating continuously over a surface regolith within a polar crater has been applied. The environmental plasma has been described previously. We define a new tribo-charging term specifically for the rotating system, with charge levels defined as a function of the wheel size, area in contact with the regolith, regolith particle size distribution, as well as the velocity at which the wheel is turning. We recognize that as charged dust accumulates and sticks to the wheel, this behaves effectively as a new current. Hence, the overall charging of the system should no longer vary linearly. and begin to show signs of saturation, We are devising a dust current term to model this charge-limiting effect, and will present the results in discussion.

Jackson, T. L.↗

NASA NTRS2012

Nanoengineered Thermal Materials Based on Carbon Nanotube Array Composites

State-of-the-art integrated circuits (ICs) for microprocessors routinely dissipate power densities on the order of 50 W/cm2. This large power is due to the localized heating of ICs operating at high frequencies and must be managed for future high-frequency microelectronic applications. As the size of components and devices for ICs and other appliances becomes smaller, it becomes more difficult to provide heat dissipation and transport for such components and devices. A thermal conductor for a macro-sized thermal conductor is generally inadequate for use with a microsized component or device, in part due to scaling problems. A method has been developed for providing for thermal conduction using an array of carbon nanotubes (CNTs). An array of vertically oriented CNTs is grown on a substrate having high thermal conductivity, and interstitial regions between adjacent CNTs in the array are partly or wholly filled with a filler material having a high thermal conductivity so that at least one end of each CNT is exposed. The exposed end of each CNT is pressed against a surface of an object from which heat is to be removed. The CNT-filler-composite adjacent to the substrate provides improved mechanical strength to anchor CNTs in place, and also serves as a heat spreader to improve diffusion of heat flux from the smaller volume (CNTs) to a larger heat sink.

Li, Jun↗

NASA NTRS2011

A Procedure for Accurately Measuring the Shaker Overturning Moment During Random Vibration Tests

Motivation: For large system level random vibration tests, there may be some concerns about the shaker's capability for the overturning moment. It is the test conductor's responsibility to predict and monitor the overturning moment during random vibration tests. If the predicted moment is close to the shaker's capability, test conductor must measure the instantaneous moment at low levels and extrapolate to higher levels. That data will be used to decide whether it is safe to proceed to the next test level. Challenge: Kistler analog formulation for computing the real-time moment is only applicable to very limited cases in which we have 3 or 4 load cells installed at shaker interface with hardware. Approach: To overcome that limitation, a simple procedure was developed for computing the overturning moment time histories using the measured time histories of the individual load cells.

predict overturning↗

NASA NTRS2012

On Shaft Data Acquisition System (OSDAS)

On Shaft Data Acquisition System (OSDAS) is a rugged, compact, multiple-channel data acquisition computer system that is designed to record data from instrumentation while operating under extreme rotational centrifugal or gravitational acceleration forces. This system, which was developed for the Heritage Fuel Air Turbine Test (HFATT) program, addresses the problem of recording multiple channels of high-sample-rate data on most any rotating test article by mounting the entire acquisition computer onboard with the turbine test article. With the limited availability of slip ring wires for power and communication, OSDAS utilizes its own resources to provide independent power and amplification for each instrument. Since OSDAS utilizes standard PC technology as well as shared code interfaces with the next-generation, real-time health monitoring system (SPARTAA Scalable Parallel Architecture for Real Time Analysis and Acquisition), this system could be expanded beyond its current capabilities, such as providing advanced health monitoring capabilities for the test article. High-conductor-count slip rings are expensive to purchase and maintain, yet only provide a limited number of conductors for routing instrumentation off the article and to a stationary data acquisition system. In addition to being limited to a small number of instruments, slip rings are prone to wear quickly, and introduce noise and other undesirable characteristics to the signal data. This led to the development of a system capable of recording high-density instrumentation, at high sample rates, on the test article itself, all while under extreme rotational stress. OSDAS is a fully functional PC-based system with 48 channels of 24-bit, high-sample-rate input channels, phase synchronized, with an onboard storage capacity of over 1/2-terabyte of solid-state storage. This recording system takes a novel approach to the problem of recording multiple channels of instrumentation, integrated with the test article itself, packaged in a compact/rugged form factor, consuming limited power, all while rotating at high turbine speeds.

Pedings, Marc↗