Efficient thin film heating element takes minimum space
Light, thin-film heating element is formed by vacuum deposition of metal onto a nonconductive surface to be heated. This small-sized heater has a very fast response time.
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Light, thin-film heating element is formed by vacuum deposition of metal onto a nonconductive surface to be heated. This small-sized heater has a very fast response time.
Current distribution in thin film superconducting strip transmission line by Fredholm equation
Ion plating deposits thin film on complex surface in one operation. The ionized materials follow electric lines of force to all points on the objects, uniformly plating the surface from all sides simultaneously.
Thin film gallium arsenide photovoltaic solar cells
Fabrication of cadmium sulfide thin film solar cell modules
Refractive and thickness indexes of thin films determined by ellipsometry
Chemical vapor deposition of titanium oxide thin film with good dielectric properties
Thin film Au-CdS-Cr diodes interfacial barrier height after heat treatment in sulfurized silicone oil and various gaseous ambients, noting photoresponse
Thin film integrated circuits for high temperature applications, discussing single crystalline dielectrics role
Effects of preparation techniques on thin film CdS solar cells
Thin film thermistors heat-separated from graphite substrate to achieve positive temperature resistance coefficient via argon heating and oxygen cooling
Interference pattern fringe for measuring thin films on metal
Superconducting properties of Nb-Ti-N thin films prepared by reactive sputtering process, obtaining transition temperature maximums
Superconducting thin films of beta-tungsten structure Nb-Al-Ge compound, discussing high purity sputtering preparation techniques and properties in magnetic fields
Pulse rise time effect on nanosecond magnetic thin film switching with flux reversal and stray field interaction
The deposition of semiconducting and insulating thin films at low temperatures using microwave technology was explored. The method of plasma formations, selection of a power source, the design of the microwave plasma cavity, the microwave circuitry, impedance matching, plasma diagnostics, the deposition chamber and the vacuum system were studied.
A number of samples of optical thin film materials were flown on Shuttle flight STS-8 as part of an experiment to evaluate their interaction with residual atomic oxygen in low earth orbit. Osmium was selected because of its usefulness as a reflective optical coating for far-UV instruments and for confirmation of results from previous Shuttle flights in which such coatings disappeared. Reflectance data and photographic evidence are presented to support the hypothesis that the osmium disappearance is due to reaction with oxygen to form a volatile oxide. Platinum and iridium, which were included for comparison, fared much better.
The surface resistance of niobium nitride (NBN) thin films was measured at 7.78 and 10.14 GHz in the temperature range of 1.5 to 4.2 K. The films were reactively sputtered on sapphire substrates to a thickness of approximately 1 micron. The surface resistance was determined by measuring the quality factor (Q) of the TE sub 011 mode of a lead-plated copper cavity where the NbN served as one end-cap of the cavity.