Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Solid State Lighting”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH 3 -based molecular beam epitaxy

High external quantum efficiency (EQE) p-i-n heterojunction solar cellsgrown by NH 3 -based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorptionmeasurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

14 SOLAR ENERGY↗
DOE OSTI2014

Shape transition of unstrained flattest single-walled carbon nanotubes under pressure

Single walled carbon nanotube's (SWCNT's) cross section can be flattened under hydrostatic pressure. One example is the cross section of a single walled carbon nanotube successively deforms from the original round shape to oval shape, then to peanut-like shape. At the transition point of reversible deformation between convex shape and concave shape, the side wall of nanotube is flattest. This flattest tube has many attractive properties. In the present work, an approximate approach is developed to determine the equilibrium shape of this unstrained flattest tube and the curvature distribution of this tube. Our results are in good agreement with recent numerical results, and can be applied to the study of pressure controlled electric properties of single walled carbon nanotubes. The present method can also be used to study other deformed inorganic and organic tube-like structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of hydrocarbon adsorption on the wettability of rare earth oxide ceramics

Vapor condensation is routinely used as an effective means of transferring heat, with dropwise condensation exhibiting a 5 − 7x heat transfer improvement compared to filmwise condensation. However, state-of-the-art techniques to promote dropwise condensation rely on functional hydrophobic coatings, which are often not robust and therefore undesirable for industrial implementation. Natural surface contamination due to hydrocarbon adsorption, particularly on noble metals, has been explored as an alternative approach to realize stable dropwise condensing surfaces. While noble metals are prohibitively expensive, the recent discovery of robust rare earth oxide (REO) hydrophobicity has generated interest for dropwise condensation applications due to material costs approaching 1% of gold; however, the underlying mechanism of REO hydrophobicity remains under debate. In this work, we show through careful experiments and modeling that REO hydrophobicity occurs due to the same hydrocarbon adsorption mechanism seen previously on noble metals. To investigate adsorption dynamics, we studied holmia and ceria REOs, along with control samples of gold and silica, via X-Ray photoelectron spectroscopy (XPS) and dynamic time-resolved contact angle measurements. The contact angle and surface carbon percent started at ≈0 on in-situ argon-plasma-cleaned samples and increased asymptotically over time after exposure to laboratory air, with the rare earth oxides displaying hydrophobic (>90°) advancing contact angle behavior at long times (>4 days). The results indicate that REOs are in fact hydrophilic when clean and become hydrophobic due to hydrocarbon adsorption. Furthermore, this study provides insight into how REOs can be used to promote stable dropwise condensation, which is important for the development of enhanced phase change surfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2010

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 μm were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both cases. The 800-nm-thick PhC LEDs yielded only a slight improvement in total light output over the 3.45-μm -thick PhC LEDs. Simulations indicate that, except for ultrathin devices well below 800 nm, the balance between PhC extraction and metal absorption at the backside mirror results in modal extraction efficiencies that are almost independent of device thickness, but highly dependent on mirrorreflectivity.

42 ENGINEERING↗
DOE OSTI2012

Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs

The electron concentration in dilute alloys of Er in GaAs, In{sub 0.53}Ga{sub 0.47}As, and InAs grown by molecular beam epitaxy is studied as a function of Er concentration and In content. Using first-principles calculations based on hybrid density functional theory, we attribute an observed increase in conduction electron concentration to Er incorporation on interstitial sites. Er also incorporates on substitutional sites where it is isovalent and electrically inactive. The formation energy of interstitial Er in InAs is significantly smaller than in GaAs, allowing for more electrically active Er in InAs. The results provide insight into characteristics of rare-earth elements as dopants in semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n -type half-Heuslers Hf 0.75–x Ti x Zr 0.25 NiSn 0.99 Sb 0.01

We report the effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf 0.75–x Ti x Zr 0.25 NiSn 0.99 Sb 0.01 , has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf 0.5 Zr 0.25 Ti 0.25 NiSn 0.99 Sb 0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. The ZT values below 500 °C of hot pressed Hf 0.5 Zr 0.25 Ti 0.25 NiSn 0.99 Sb 0.01 samples are significantly higher than those of the same way prepared Hf 0.75 Zr 0.25 NiSn 0.99 Sb 0.01 samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.

nanostructuring↗