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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Performance of an SOI Boot-Strapped Full-Bridge MOSFET Driver, Type CHT-FBDR, under Extreme Temperatures

Electronic systems designed for use in deep space and planetary exploration missions are expected to encounter extreme temperatures and wide thermal swings. Silicon-based devices are limited in their wide-temperature capability and usually require extra measures, such as cooling or heating mechanisms, to provide adequate ambient temperature for proper operation. Silicon-On-Insulator (SOI) technology, on the other hand, lately has been gaining wide spread use in applications where high temperatures are encountered. Due to their inherent design, SOI-based integrated circuit chips are able to operate at temperatures higher than those of the silicon devices by virtue of reducing leakage currents, eliminating parasitic junctions, and limiting internal heating. In addition, SOI devices provide faster switching, consume less power, and offer improved radiation-tolerance. Very little data, however, exist on the performance of such devices and circuits under cryogenic temperatures. In this work, the performance of an SOI bootstrapped, full-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Patterson, Richard↗
NASA NTRS1977

A general unified approach to modelling switching dc-to-dc converters in discontinuous conduction mode

A method for modelling switching converters in the discontinuous conduction mode is developed, whose starting point is the unified state-space representation, and whose end result is a complete linear circuit model which correctly represents all essential features, namely, the input, output, and transfer properties (static dc as well as dynamic ac small signal). While the method is generally applicable to any switching converter operating in the discontinuous conduction mode, it is extensively illustrated for the three common power stages (buck, boost, and buck-boost). The results for these converters are then easily tabulated owing to the fixed equivalent circuit topology of their canonical circuit model.

Cuk, S.↗
NASA NTRS1983

Polymer thick-film conductors and dielectrics for membrane switches and flexible circuitry

The fabrication and operation of membrane switches are discussed. The membrane switch functions as a normally open, momentary contact, low-voltage pressure-sensitive device. Its design is a three-layer sandwich usually constructed of polyester film. Conductive patterns are deposited onto the inner side of top and bottom sheets by silk screening. The center spacer is then placed between the two circuit layers to form a sandwich, generally held together by an adhesive. When pressure is applied to the top layer, it flexes through the punched openings of the spacer to establish electrical contact between conductive pads of the upper and lower sheets, momentarily closing the circuit. Upon release of force the top sheet springs back to its normal open position. The membrane touch switch is being used in a rapidly expanding range of applications, including instrumentation, appliances, electronic games and keyboards. Its board acceptance results from its low cost, durability, ease of manufacture, cosmetic appeal and design flexibility. The principal electronic components in the membrane switch are the conductor and dielectric.

Nazarenko, N.↗
NASA NTRS2004

Reproducible Growth of High-Quality Cubic-SiC Layers

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS2011

Binary-Signal Recovery

Binary communication through long cables, opto-isolators, isolating transformers, or repeaters can become distorted in characteristic ways. The usual solution is to slow the communication rate, change to a different method, or improve the communication media. It would help if the characteristic distortions could be accommodated at the receiving end to ease the communication problem. The distortions come from loss of the high-frequency content, which adds slopes to the transitions from ones to zeroes and zeroes to ones. This weakens the definition of the ones and zeroes in the time domain. The other major distortion is the reduction of low frequency, which causes the voltage that defines the ones or zeroes to drift out of recognizable range. This development describes a method for recovering a binary data stream from a signal that has been subjected to a loss of both higher-frequency content and low-frequency content that is essential to define the difference between ones and zeroes. The method makes use of the frequency structure of the waveform created by the data stream, and then enhances the characteristics related to the data to reconstruct the binary switching pattern. A major issue is simplicity. The approach taken here is to take the first derivative of the signal and then feed it to a hysteresis switch. This is equivalent in practice to using a non-resonant band pass filter feeding a Schmitt trigger. Obviously, the derivative signal needs to be offset to halfway between the thresholds of the hysteresis switch, and amplified so that the derivatives reliably exceed the thresholds. A transition from a zero to a one is the most substantial, fastest plus movement of voltage, and therefore will create the largest plus first derivative pulse. Since the quiet state of the derivative is sitting between the hysteresis thresholds, the plus pulse exceeds the plus threshold, switching the hysteresis switch plus, which re-establishes the data zero to one transition, except now at the logic levels of the receiving circuit. Similarly, a transition from a one to a zero will be the most substantial and fastest minus movement of voltage and therefore will create the largest minus first derivative pulse. The minus pulse exceeds the minus threshold, switching the hysteresis switch minus, which re-establishes the data one to zero transition. This innovation has a large increase in tolerance for the degradation of the binary pattern of ones and zeroes, and can reject the introduction of noise in the form of low frequencies that can cause the voltage pattern to drift up or down, and also higher frequencies that are beyond the recognizable content in the binary transitions.

Griebeler, Elmer L.↗
DOE OSTI2014

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

Ericson, N↗
NASA NTRS1972

ASDTIC duty-cycle control for power converters

The application of analog signal to discrete interval converter (ASDTIC), a hybrid micromodule, two loop control subsystem, to a switching, stepdown dc to dc converter is described. The power circuitry, interface and ASDTIC subsystems used in this switching regulator were developed to exhibit the improved regulation, transient performance, regulator stability and freedom from the effects of variations in parts characteristics due to environmental changes and aging. ASDTIC can be used with other types of power circuits that use duty-cycle control techniques by simple changes in the interface subsystem. The circuitry and performance characteristics of a +10V dc switching converter as well as that of the ASDTIC micromodule are described. Realization of the ASDTIC hybrid micromodule has been accomplished with a hermetically sealed, beam-lead, bonded/deposited nichrome thin film resistors, discrete capacitors and integrated circuits on dilithic, glazed alumina substrates using 22 feed through terminals in an integrated package.

Lalli, V. R.↗
NASA NTRS2025

Design and Simulation of Greatly Improved Future Generation 4H-SiC JFET-R Integrated Circuits for Prolonged 500 °C Operation

This work compares design layouts and circuit simulations of the next two prototype NASA Glenn SiC JFET-R IC fabrication runs designated “IC Gen. 12” and “IC Gen. 13”. Even though both generations employ the same physical JFET gate length and chip size, SPICE simulations predict drastic improvements to IC capabilities and performance metrics for Gen. 13 over Gen. 12. The main factors behind simulated performance differences are thinner n-channel layer leading to reduced operating voltages and switch to stepper-based photolithography that enables roughly 4-fold layout area reductions for functionally identical circuit blocks.

Silicon Carbide↗
DOE OSTI2021

Nitride-Oxide-Metal Heterostructure with Self-Assembled Core–Shell Nanopillar Arrays: Effect of Ordering on Magneto-Optical Properties

Magneto-optical (MO) coupling incorporates photon-induced change of magnetic polarization that can be adopted in ultrafast switching, optical isolators, mode convertors, and optical data storage components for advanced optical integrated circuits. However, integrating plasmonic, magnetic, and dielectric properties in one single material system poses challenges since one natural material can hardly possess all these functionalities. Here, co-deposition of a three-phase heterostructure composed of a durable conductive nitride matrix with embedded core–shell vertically aligned nanopillars, is demonstrated. Additionally, the unique coupling between ferromagnetic NiO core and atomically sharp plasmonic Au shell enables strong MO activity out-of-plane at room temperature. Further, a template growth process is applied, which significantly enhances the ordering of the nanopillar array. The ordered nanostructure offers two schemes of spin polarization which result in stronger antisymmetry of Kerr rotation. The presented complex hybrid metamaterial platform with strong magnetic and optical anisotropies is promising for tunable and modulated all-optical-based nanodevices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Small footprint optoelectrodes using ring resonators for passive light localization

The combination of electrophysiology and optogenetics enables the exploration of how the brain operates down to a single neuron and its network activity. Neural probes are in vivo invasive devices that integrate sensors and stimulation sites to record and manipulate neuronal activity with high spatiotemporal resolution. State-of-the-art probes are limited by tradeoffs involving their lateral dimension, number of sensors, and ability to access independent stimulation sites. Here, we realize a highly scalable probe that features three-dimensional integration of small-footprint arrays of sensors and nanophotonic circuits to scale the density of sensors per cross-section by one order of magnitude with respect to state-of-the-art devices. For the first time, we overcome the spatial limit of the nanophotonic circuit by coupling only one waveguide to numerous optical ring resonators as passive nanophotonic switches. With this strategy, we achieve accurate on-demand light localization while avoiding spatially demanding bundles of waveguides and demonstrate the feasibility with a proof-of-concept device and its scalability towards high-resolution and low-damage neural optoelectrodes.

42 ENGINEERING↗
DOE OSTI2018

Separation of current density and electric field domains caused by nonlinear electronic instabilities

In 1963 Ridley postulated that under certain bias conditions circuit elements exhibiting a current- or voltage-controlled negative differential resistance will separate into coexisting domains with different current densities or electric fields, respectively, in a process similar to spinodal decomposition of a homogeneous liquid or disproportionation of a metastable chemical compound. The ensuing debate, however, failed to agree on the existence or causes of such electronic decomposition. Using thermal and chemical spectro-microscopy, we directly imaged signatures of current-density and electric-field domains in several metal oxides. The concept of local activity successfully predicts initiation and occurrence of spontaneous electronic decomposition, accompanied by a reduction in internal energy, despite unchanged power input and heat output. This reveals a thermodynamic constraint required to properly model nonlinear circuit elements. Our results explain the electroforming process that initiates information storage via resistance switching in metal oxides and has significant implications for improving neuromorphic computing based on nonlinear dynamical devices.

42 ENGINEERING↗
DOE OSTI2016

Reproducible and controllable induction voltage adder for scaled beam experiments

A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Data-Driven Digital Twin for Reliability Assessment of DC/DC Buck Converter

In commercial applications, the operation of DC/DC converters significantly impacts overall system performance and long-term reliability. This study introduces a data-driven digital twin (DT) approach for estimating critical degradation parameters of DC/DC BUCK converter under steady-state condition. Initially, a circuit-level MATLAB/Simulink digital model (DM C ) is refined against a hardware prototype’s switching model dataset using offline particle swarm optimization. The optimized digital model’s steady-state response is then verified with its average model response while varying the duty and load. Subsequently, degradation profiles are imposed on the inductor, capacitor, MOSFET in the DMC. A large dataset is generated from this model, allowing training, validation, and testing of machine learning (ML) models for component health regression tasks. The proposed method employs random forest ML models, achieving impressive regression results with a squared R value as high as 0.99978 and a root mean square error of 4.2× 10 –6 . The method is further validated on a medium power level DC/DC BUCK prototype with varying load conditions, and includes the analysis of MOSFET’s on-resistance under degradation conditions. This data-driven DT method shows promise for identifying parasitic degradation and ohmic loss parameters, enhancing converter reliability assessments in a non-invasive, generalized, and computationally efficient manner.

14 SOLAR ENERGY↗
DOE OSTI2018

Development of a Converter-Based Transmission Line Emulator with Three-Phase Short-Circuit Fault Emulation Capability

A transmission line emulator has been developed to flexibly represent interconnected ac lines under normal operating conditions in a voltage source converter (VSC)-based power system emulation platform. As the most serious short-circuit fault condition, the three-phase short-circuit fault emulation is essential for power system studies. Here, this paper proposes a model to realize a three-phase short-circuit fault emulation at different locations along a single transmission line or one of several parallel-connected transmission lines. At the same time, a combination method is proposed to eliminate the undesired transients caused by the current reference step changes while switching between the fault state and the normal state. Experiment results verify the developed transmission line three-phase short-circuit fault emulation capability.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Commissioning of the Power Supplies and Coils of the SMART Tokamak

The small aspect ratio tokamak (SMART) is a spherical tokamak (ST) that offers unique capabilities for studying the potential of negative triangularity. It has been designed, constructed, and is currently being operated by the Plasma Science Fusion Technology (PSFT) Laboratory at the University of Seville. SMART has a total of 21 coils, organized into seven independent circuits and driven by five modular power supplies (PS). The PS operation relies on switching converter technology based on IGBT and supercapacitors (SCs). The PS delivers predefined current waveforms to the copper coil system consisting of the central solenoid (CS), 12 toroidal field (TF) coils, three series pairs of poloidal field (PF) coils, and two independent PF coils. This study details the commissioning and validation of the PS toroidal and solenoid coils, as well as the assembly of coils in SMART. The maximum rated current and slope were measured, along with the series impedance of the coils, the output current ripple, and the noise levels. The internal parameters of the SCs were measured, and optimized current profiles were proposed to enhance overall performance. A comparison has been made between the theoretical values and the experimental results, providing insight into the performance of the PS and areas for improvement.

Power electronics↗
NASA NTRS1966

MOSFET analog memory circuit achieves long duration signal storage

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Source record↗
NASA NTRS1970

P-I-N diode switch

Solid state switches use the same voltage and power supply as the RF amplifier. This simplifies circuit design and reduces input power requirements.

Vanek, C. S.↗