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DOE OSTI2014

A robust and well shielded thermal conductivity device for low temperature measurements

We present a compact mechanically robust thermal conductivity measurement apparatus for measurements at low temperatures (<1 K) and high magnetic fields on small high-purity single crystal samples. A high-conductivity copper box is used to enclose the sample and all the components. The box provides protection for the thermometers, heater, and most importantly the sample increasing the portability of the mount. In addition to physical protection, the copper box is also effective at shielding radio frequency electromagnetic interference and thermal radiation, which is essential for low temperature measurements. A printed circuit board in conjunction with a braided ribbon cable is used to organize the delicate wiring and provide mechanical robustness.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2019

The Effects of Atomic-Scale Strain Relaxation on the Electronic Properties of Monolayer MoS 2

The ability to control nanoscale electronic properties by introducing macroscopic strain is of critical importance for the implementation of 2D materials into flexible electronics and next generation strain engineering devices. In this work we correlate the atomic-scale lattice deformation with a systematic macroscopic bending of monolayer molybdenum disulfide films by using scanning tunneling microscopy and spectroscopy implemented with a custom-built sample holder to control the strain. Using this technique, we are able to induce strains of up to 3% before slipping effects take place and relaxation mechanisms prevail. We find a reduction of the quasiparticle bandgap of about 400 meV per percent local strain measured with a minimum gap of 1.2 eV. Furthermore, unintentional nanoscale strain relaxation of van der Waals monolayer sheets can negatively impact strain engineered device performance. In this paper, we investigate such strain relaxation mechanisms that include 1D ripples and 2D wrinkles which alter the spatial electronic density of states and strain distribution on the atomic-scale.

2-D Materials↗

DOE OSTI2016

Structural and luminescence properties of CaTiO{sub 3}:Eu{sup 3+} phosphor synthesized by chemical co-precipitation method for the application of solid state lighting devices

The present work report a series of trivalent Europium (Eu{sup 3+}) doped well crystallized perovskite CaTiO{sub 3} phosphors successfully synthesized by chemical co-precipitation method. The crystal structure was confirmed by X-ray diffraction (XRD) which is in good agreement with pure orthorhombic phase with space group Pbnm, and it also indicated that the incorporation of the dopant did not affect the crystal structure. The impact of doping on the photoluminescence performances of the sample has been investigated by emission, excitation, and diffuse reflectance spectra at the room temperature. Photoluminescence spectra of Eu{sup 3+} doped CaTiO{sub 3} nanophosphor revealed the characteristic emission peak around wavelength 618 nm in the visible region upon the excitation of near-UV light at wavelength 397 nm due to {sup 5}D{sub 0} → {sup 7}F{sub 2} transition in Eu{sup 3+}. It was further proved that the dipole– dipole interactions results in the concentration quenching of Eu{sup 3+} in CaTiO{sub 3}:Eu{sup 3+} nanophosphors. The elemental composition of sample carried out by energy dispersive spectroscopy (EDS). EDS analysis reveals that the Eu{sup 3+} doped successfully into host CaTiO{sub 3}. The experimental result reveals that prepared nanophosphor can be used in the application of solid state lighting devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Development of an in situ temperature stage for synchrotron X-ray spectromicroscopy

In situ characterization of micro- and nanoscale defects in polycrystalline thin-film materials is required to elucidate the physics governing defect formation and evolution during photovoltaic device fabrication and operation. X-ray fluorescence spectromicroscopy is particularly well-suited to study defects in compound semiconductors, as it has a large information depth appropriate to study thick and complex materials, is sensitive to trace amounts of atomic species, and provides quantitative elemental information, non-destructively. Current in situ methods using this technique typically require extensive sample preparation. In this work, we design and build an in situ temperature stage to study defect kinetics in thin-film solar cells under actual processing conditions, requiring minimal sample preparation. Careful selection of construction materials also enables controlled non-oxidizing atmospheres inside the sample chamber such as H 2 Se and H 2 S. Temperature ramp rates of up to 300 °C/min are achieved, with a maximum sample temperature of 600 °C. As a case study, we use the stage for synchrotron X-ray fluorescence spectromicroscopy of CuIn x Ga 1–x Se 2 (CIGS) thin-films and demonstrate predictable sample thermal drift for temperatures 25–400°C, allowing features on the order of the resolution of the measurement technique (125 nm) to be tracked while heating. As a result, the stage enables previously unattainable in situ studies of nanoscale defect kinetics under industrially relevant processing conditions, allowing a deeper understanding of the relationship between material processing parameters, materials properties, and device performance.

47 OTHER INSTRUMENTATION↗

DOE OSTI2022

Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Abstract The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibility inherent to these three-dimensional device geometries necessitates direct measurement of their deformation. Here we report synchrotron x-ray diffraction-based non-destructive nanoscale mapping of Si/SiGe nanosheets for gate-all-around structures. We identified two competing mechanisms at different length scales contributing to the deformation. One is consistent with the in-plane elastic relaxation due to the Ge lattice mismatch with the surrounding Si. The second is associated with the out-of-plane layering of the Si and SiGe regions at a length scale of film thickness. Complementary mechanical modeling corroborated the qualitative aspects of the deformation profiles observed across a variety of nanosheet sample widths. However, greater deformation is observed in the SiGe layers of the nanosheets than the predicted distributions. These insights could play a role in predicting carrier mobilities of future devices.

Murray, Conal E. (ORCID:0000000199014290)↗

DOE OSTI2022

Ultraefficient resistance switching between charge ordered phases in 1 T -TaS 2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS 2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS 2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A =9.4 fJ/μm 2 . Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS 2 devices into a category of their own among new generation nonvolatile memory devices.

42 ENGINEERING↗

DOE OSTI2013

Microplasma source for optogalvanic spectroscopy of nanogram samples

The demand for analysis of smaller samples in isotopic ratio measurements of rare isotopes is continuously rising with the development of new applications, particularly in biomedicine. Interesting in this aspect are methods based on optogalvanic spectroscopy, which have been reported to facilitate both {sup 13}C-to-{sup 12}C and {sup 14}C-to-{sup 12}C ratio measurements with high sensitivity. These methods also facilitate analysis of very small samples, down to the microgram range, which makes them very competitive to other technologies, e.g., accelerator mass spectroscopy. However, there exists a demand for moving beyond the microgram range, especially from regenerative medicine, where samples consist of, e.g., DNA, and, hence, the total sample amount is extremely small. Making optogalvanic spectroscopy of carbon isotopes applicable to such small samples, requires miniaturization of the key component of the system, namely the plasma source, in which the sample is ionized before analysis. In this paper, a novel design of such a microplasma source based on a stripline split-ring resonator is presented and evaluated in a basic optogalvanic spectrometer. The investigations focus on the capability of the plasma source to measure the optogalvanic signal in general, and the effect of different system and device specific parameters on the amplitude and stability of the optogalvanic signal in particular. Different sources of noise and instabilities are identified, and methods of mitigating these issues are discussed. Finally, the ability of the cell to handle analysis of samples down to the nanogram range is investigated, pinpointing the great prospects of stripline split-ring resonators in optogalvanic spectroscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2014

SU-E-T-368: Effect of a Strong Magnetic Field On Select Radiation Dosimeters

Purpose: To determine the effect of a strong magnetic field on TLD-100, OSLD (Al{sub 2}O{sub 2}:C), and PRESAGE dosimetry devices. This study will help to determine which types of dosimeters can be used for quality assurance and in-vivo dosimetry measurements in a magnetic resonance imaginglinear accelerator (MRI-linac) system. Methods: The dosimeters were separated into two categories which were either exposed or not exposed to a strong magnetic field. In each category a set of dosimeters was irradiated with 0, 2, or 6 Gy. To expose the dosimeters to a magnetic field the samples in that category were place in a Bruker small animal magnetic resonance scanner at a field strength slightly greater than 2.5 T for at least 1 hour preirradiation and at least 1 hour post-irradiation. Irradiations were performed with a 6 MV x-ray beam from a Varian TrueBeam linac with 10×10 cm{sup 2} field at a 600 MU/min dose rate. The samples that received no radiation dose were used as control detectors. Results: The readouts of the dosimeters which were not exposed to a strong magnetic field were compared with the measurements of the dosimetry devices which were exposed to a magnetic field. No significant differences (less than 2% difference) in the performance of TLD, OSLD, or PRESAGE dosimeters due to exposure to a strong magnetic field were observed. Conclusion: Exposure to a strong magnetic field before and after irradiation does not appear to change the dosimetric properties of TLD, OSLD, or PRESAGE which indicates that these dosimeters have potential for use in quality assurance and in-vivo dosimetry in a MRI-linac. We plan to further test the effect of magnetic fields on these devices by irradiating them in the presence of a magnetic fields similar to those produced by a MRI-linac system. Elekta-MD Anderson Cancer Center Research Agreement.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2014

Hydrothermal synthesis of doped lanthanum zirconate nanomaterials and the effect of V–Ge substitution on their structural, electrical and dielectric properties

Graphical abstract: Variation of dielectric constant with frequency for all the synthesized materials. - Highlights: • Hydrothermal method has been successfully employed to synthesize the zirconates. • XRD confirmed the formation of required phase. • Increased electrical resistivity makes these materials useful for microwave devices. • Dielectric parameters of zirconates decrease with increasing frequency. • Dielectric constant decreases with increasing substituents concentration. - Abstract: A hydrothermal method was successfully employed for the synthesis of a series of vanadium and germanium co-doped pyrochlore lanthanum zirconates with composition La{sub 2−x}V{sub x}Zr{sub 2−y}Ge{sub y}O{sub 7} (where x, y = 0.0, 0.25, 0.50, 0.75 and 1.0). The XRD and FTIR analyses confirmed the formation of single phase except vanadium and germanium substituted samples and the crystallite sizes are in the range of 7–31 nm for V{sup 3+}–Ge{sup 4+} substituted samples. The theoretical compositions are confirmed by the ED-XRF studies. The room temperature electrical resistivity increase with the substituents concentration which suggests that the synthesized materials can be used for microwave devices as such devices required highly resistive materials. Dielectric properties were measured in the frequency range of 6 kHz to 1 MHz. The dielectric parameters decrease with increase in frequency. The DC resistivity data is in good agreement with the dielectric data.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Study of the properties of thin Li films and their relationship with He plasmas using ion beam analysis in the DIONISOS experiment

Plasma facing component (PFC) conditioning dramatically affects plasma performance in magnetic confinement fusion experiments. Lithium (Li) has been used in several machines to condition PFC with subsequent improvements to plasma performance. Multiple studies have investigated the interactions of Li with deuterium (D) and oxygen (O) in order to ascertain the mechanisms behind the enhanced plasma performance. Ion Beam Analysis (IBA) is a useful tool to interrogate PFC surfaces as they interact with plasmas. Dynamics of ion implantation and sputtering of surfaces (DIONISOS) is a linear plasma device, capable of generating discharges with fluxes ~10 21 m -2 s -1 and Te ~6 eV, coupled to an ion accelerator. DIONISOS is capable of analyzing samples using Elastic Recoil Detection (ERD) and Rutherford Backscattering Spectroscopy (RBS) during plasma exposures. The facility has been equipped with a Li deposition system for evaporation of thin coatings on different substrates. The evaporator enables real time ERD and RBS measurements of deposition and erosion of Li coatings on different substrates and the interaction of the Li with the vacuum and plasma. Considerations for ERD, e.g., ion species, energy, and data acquisition frequency, are presented. Furthermore, this work is the basis for further investigation of He, H, and D retention in solid and liquid Li.

47 OTHER INSTRUMENTATION↗

DOE OSTI2018

Performance of Dye-Sensitized Solar Cells (DSSCs) Fabricated with Zinc Oxide (ZnO) Nanpowders and Nanorods

Due to their high efficiencies, along with lower production costs, many researchers are working on dye-sensitized solar cells (DSSCs) over last few decades as a substitute technology for nonconventional energy. Nanostructured ZnO has got many interesting properties such as wide band gap, large exciton binding energy, good exciton stability, and high breakdown strength, which are applicable as DSSC electrodes. This present work compares the device properties of DSSC fabricated using ZnO nanorods on a ZnO film and ZnO nanopowders. Different types of ZnO photoanode and dye combinations are used to study the stability and photovoltaic properties of the DSSC cell. The photovoltaic properties of the ZnO-based DSSC samples were systematically investigated. The photovoltaic properties of fabricated cell obtained are discussed in the light of band structure and density of states of different types of ZnO nanolayers. The ZnO nanorods fabricated through the sol–gel route have more uniform thickness resulting in enhanced photovoltaic properties of the fabricated device.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2019

Deployment of Rapid Assay Systems for Real-time Sorting of Excavation Spoil on Contaminated Land - 19258

To optimise segregation at source, and hence minimise waste production, NUVIA have developed and utilised the Gamma Excavation Monitor (GEM) system. The GEM was designed for land remediation projects, to provide a rapid screening tool for excavator buckets of material. Following successful deployment in the UK, including the Olympic Park site in London, and two major Magnox land remediation projects, the first GEM unit was deployed to Canadian Nuclear Laboratories' (CNL) Chalk River Laboratory (CRL) in 2016. The GEM unit was fitted with a plastic scintillator detector; recent developments have included the utilisation of a sodium iodide. The system is initiated by the presence of an excavator bucket above the detector which triggers proximity switches that automatically start the counting routine. At the end of a short count time, typically 10 seconds, the materials category is indicated by means of a traffic light system, based on either the gross gamma activity or a photo-peak. Using this instrument, material determined not to be radioactive can be re-used on-site. In addition to the traffic light system, results are also transmitted wirelessly to a tablet device. These combined features allow operation of the system without the need to have operatives near the mechanical excavator bucket; therefore, eliminating a significant industrial hazard. Deployments of the GEM on the CRL site have included Storm Water Management project, within the CRL controlled area, and the Foundation Road Landfill Project. The use of the GEM in these projects enabled in-situ decisions to be made regarding the segregation and sentencing of soil rather than having to wait for the analysis of samples; saving time and cost to the project. The Building 492 project involved the excavation of soil within a supervised area to prepare for the installation of modular trailer units. For this specific job, the GEM was calibrated to ensure soil met clearance criteria as stipulated in the Nuclear Substances and Radiation Devices Regulations (Canadian Nuclear Safety Commission; SOR/2000-207). A total of 326 loads of soil were monitored during this project and re-assurance sampling conducted by CNL corroborated the results produced by the GEM system. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2015

Optimization of barrier layer thickness in MgSe/CdSe quantum wells for intersubband devices in the near infrared region

The authors report the optimization of MgSe barrier thickness in CdSe/MgSe multiple quantum well structures and its effect on structural, optical qualities and intersubband (ISB) transition characteristics. Three samples with the MgSe thicknesses of 2 nm, 3 nm, and 4 nm were grown on InP substrates by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed that the thinner the MgSe barrier thickness the better the structural quality. However, ISB absorption was only observed in the sample with a MgSe thickness of 3 nm. Failing to observe ISB absorption in the sample with a thicker MgSe barrier (≥4 nm) is due to the deteriorated material quality while the missing of ISB transition in the sample with thinner barrier (≤2 nm) is due to the tunneling of electrons out of the CdSe wells. The optimized MgSe barrier thickness of around 3 nm is found to be able to suppress the electron tunneling while maintaining a good material quality of the overall structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2018

Plasma exposures of a high-conductivity graphitic foam for plasma facing components

The plasma-surface interactions from samples of high-conductivity graphitic foam biased to 120 V and placed in 6–8 eV deuterium plasmas with densities as high as 10 19 m -3 were investigated at the PSI-2 linear plasma device in Jülich. Graphitic foam-plasma interactions were also studied at the Wendelstein 7-X (W7-X) stellarator in Greifswald by exposure to hydrogen and helium plasmas using the Jülich multi-purpose manipulator. The purpose was to explore the possibility of using the material in a plasma facing component, and initial results were encouraging. In W7-X, no measurable erosion or cracking was observed. The PSI-2 samples received a deuterium fluence of 5 × 10 25 m -2 resulting in an average erosion of 43 µm or about 5 mg per sample. Residual gas analysis (RGA) data were acquired to monitor sample outgassing. Laser-induced Breakdown Spectroscopy (LIBS) was used to measure deuterium retention in the porous foam. After exposure, the surfaces were characterized with scanning electron microscopy, energy dispersive x-ray analysis and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The graphitic foam has a thermal conductivity as high as 287 W/mK and is considered as a replacement to more exotic carbon fiber composites such as SepCarb NB31 or isotropic graphites like ATJ that are no longer produced but used in present-day tokamak experiments. Actively cooled monoblocks were made from the foam and underwent extensive materials characterization including infrared response studies at Oak Ridge National Laboratory. This material is under consideration for the proposed actively-cooled W7-X divertor scraper element.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2015

Impedance spectroscopy of organic magnetoresistance devices—Effect of interface disorder

Organic magnetoresistance (OMAR) can be caused by either single carrier (bipolaron) or double carriers (electron-hole)-based mechanisms. In order to consider applications for OMAR, it is important to control the mechanism present in the device. In this paper, we report the effect of traps on OMAR resulting of disorder at the interface between the organic active layer with the hole injection layer [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate): PEDOT:PSS]. It has been found that while the single carriers OMAR is enhanced by the presence of traps, the double carriers OMAR is totally removed in a sample with a high interface trap density. The reasons for these results are discussed based on the impedance spectroscopy measurements. First, the mechanism (single or double carriers) responsible of the OMAR was determined with the support of the capacitance measurement. Then, the influence of traps was discussed with the Nyquist diagrams and phase angle-frequency plots of the samples. The results suggested that with a rough interface and thus high disorder, the presence of traps enhanced the bipolaron formation. Traps also acted as recombination centers for electron-hole pairs, which prevented the double carriers OMAR in devices with a rough interface. On the other hand, with a low trap density, i.e., with a smooth surface, the single carrier OMAR decreased, and double carriers OMAR appeared. The sign of the OMAR could then be controlled by simply sweeping the bias voltage. This work demonstrated that the roughness at the interface is important for controlling OMAR and its reproducibility, and that the combination of OMAR measurement and impedance spectroscopy is helpful for clarifying the processes at the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis

Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGS absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.

14 SOLAR ENERGY↗

DOE OSTI2017

Use of electronic cigarettes in public and private settings in Barcelona (Spain)

Objectives: To describe the prevalence of e-cigarette users who use them in selected indoor public and workplaces, and private venues in Barcelona (Spain) in 2015. Methods: This is a cross-sectional study of a sample of e-cigarette users (≥ 18 years) from Barcelona (n = 600). We calculated the proportion of e-cigarette users who used the device in public and private settings (in the last 30 days). We fit multivariate logistic regression models adjusted for sex and age to calculate the odds ratios (OR) with their 95% confidence intervals (CI) of e-cigarette use by socio-demographic factors, dual use and nicotine-containing e-cigarettes. Results: The highest proportion of e-cigarette users who used them in public places was found at restaurants or bars (69.4%) and nightclubs or pubs (55.4%). Also being current conventional tobacco smokers (dual users) was significantly associated with lower use of e-cigarettes in workplaces (OR = 0.61, 95%CI:0.41–0.91), restaurants (OR = 0.66, 95%CI:0.45–0.97) and nightclubs (OR = 0.56, 95%CI:0.37–0.86). Moreover, being a nicotine-containing e-cigarette user was associated with higher odds of using the device in workplaces (OR = 2.01, 95%CI:1.34–3.01), and lower odds of using it in nightclubs (OR = 0.56, 95%CI:0.39–0.82). 96.8% of the included e-cigarette users declared to use the device at home. Being a current tobacco smoker was associated with increased odds of using e-cigarettes at home (OR = 3.17, 95%CI:1.22–8.22). Conclusions: E-cigarette use in private settings and in public settings where their use is not regulated by law is high. Therefore, the public health administration in Spain should consider expanding the prohibition of e-cigarette use to indoor public places and should take into account the possibility of exposure to aerosol from e-cigarettes. - Highlights: • Describe use e-cigarette in indoor public and workplaces. • Describe use e-cigarette in indoor private venues. • E-cigarette use in private settings is high. • Dual users declared a higher use of e-cigarettes. • Expanding the prohibition of e-cigarette use should be considered.

54 ENVIRONMENTAL SCIENCES↗

DOE OSTI2019

Growth of GaAs on single-crystal layered-2D Bi 2 Se 3

This article demonstrates the successful growth of cubic GaAs (111) on single-crystal 2D layered Bi 2 Se 3 (0001) substrates achieved using a cubic ZnSe buffer layer. This growth sequence was chosen based upon observed reactions between Bi 2 Se 3 (0001) substrates and both Ga and Zn. For the conditions used in our MOCVD reactor, triethylgallium (TEGa) interacts strongly with Bi 2 Se 3 to form Ga 2 Se 3 , which can disrupt the nucleation and growth of GaAs. Therefore, a buffer layer is needed which prevents Ga-Bi 2 Se 3 interactions while simultaneously providing a suitable growth surface for GaAs. ZnSe was chosen because it is lattice-matched to GaAs, and can be created by annealing the Bi2Se3 under a diethylzinc (DEZn) flux. A sample utilizing this growth sequence has been grown, characterized and exfoliated as a possible pathway toward reducing the substrate cost for III-V devices such as solar cells.

14 SOLAR ENERGY↗