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At least 901 records · Page 50

Long-distance coherence of Majorana wires

Theoretically, a pair of Majorana bound states in a topological superconductor forms a single fermionic level even at large separations, implying that the parity information is stored nonlocally. The nonlocality leads to a long-distance coherence for electrons tunneling through a Coulomb-blockaded Majorana wire, an effect that can be observed, e.g., in an interferometer. Here, we examine theoretically the coherent electron transfer, taking into account that tunneling implies the long-distance transfer of charge, which is carried by one-dimensional plasmons. In this work, we show that the charge dynamics does not affect the coherence of the electron tunneling process in a topological superconductor consisting of a semiconductor wire proximitized by a single bulk superconductor. The coherence may be strongly suppressed, however, if the topological superconductivity derives from a semiconductor wire proximitized by a granular superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

GW band structure of monolayer MoS 2 using the SternheimerGW method and effect of dielectric environment

Monolayers of transition-metal dichalcogenides (TMD) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method to investigate the quasiparticle band structure of monolayer MoS 2 subject to an effective dielectric screening model, which is meant to approximately describe substrate polarization in real device applications. We show that, within this model, the dielectric screening has a sizeable effect on the quasiparticle band gap, for example the gap renormalization is as large as 250 meV for MoS 2 with model screening corresponding to SiO 2 . Within the G 0 W 0 approximation, we also find that the inclusion of the effective screening induces a direct band gap, in contrast to the unscreened monolayer. We also find that the dielectric screening induces an enhancement of the carrier effective masses by as much as 27% for holes, shifts plasmon satellites, and redistributes quasiparticle weight. Our results highlight the importance of the dielectric environment in the design of 2D TMD-based devices.

36 MATERIALS SCIENCE↗

Harnessing the photonic local density of states in graphene moiré superlattices

In this work we investigate the electromagnetic local density of states (LDOS) near a twisted bilayer graphene (TBG) deposited over a general isotropic substrate. The band structure of the TBG is calculated within a tight-binding framework, and then used to determine the TBG's conductivity. The latter presents a nontrivial dependence upon the angle of twist, which shows up in the LDOS, allowing for a moiré pattern-dependent quantum emission. For some specific twist angles we show that it is possible to either enhance or decrease the LDOS by an order of magnitude at selected frequencies when compared to the monolayer. Furthermore, this impressive variation is explained in terms of the presence/absence of well defined surface plasmon polaritons (SPPs). Altogether our findings demonstrate that TBG is an alternative, versatile material platform for controlling spontaneous emission and enhancing light-matter interactions, and pave the way for further studies and applications of quantum emission in the emerging class of two-dimensional moiré materials.

36 MATERIALS SCIENCE↗

Progress towards understanding ultranonlocality through the wave-vector and frequency dependence of approximate exchange-correlation kernels

In the framework of time-dependent density functional theory (TDDFT), the exact exchange-correlation (xc) kernel f xc (n, q, ω) determines the ground-state energy, excited-state energies, lifetimes, and the time-dependent linear density response of any many-electron system. The recently developed MCP07 xc kernel f xc (n, q, ω) of A. Ruzsinszky et al. [Phys. Rev. B 101, 245135 (2020)] yields excellent uniform electron gas (UEG) ground-state energies and plausible plasmon lifetimes. As MCP07 is constructed to describe f xc of the UEG, it cannot capture optical properties of real materials. To verify this claim, we follow Nazarov et al. [Phys. Rev. Lett. 102, 113001 (2009)] to construct the long-range, dynamic xc kernel, lim q→0 f xc (n, q, ω) = -α(ω)e 2 /q 2 , of a weakly inhomogeneous electron gas, using MCP07 and other common xc kernels. The strong wavevector and frequency dependence of the “ultranonlocality” coefficient α(ω) is demonstrated for a variety of simple metals and semiconductors. We examine how imposing exact constraints on an approximate kernel shapes α(ω). Comparisons to kernels derived from correlated-wavefunction calculations are drawn.

36 MATERIALS SCIENCE↗

High-temperature self-energy corrections to x-ray absorption spectra

Effects of finite-temperature quasiparticle self-energy corrections on x-ray absorption spectra are investigated within the finite-temperature quasiparticle local density GW approximation up to temperatures T of order the Fermi temperature. To facilitate the calculations, we parametrize the quasiparticle self-energy using low-order polynomial fits. Here we show that temperature-driven decrease in the electron lifetime substantially broadens the spectra in the near-edge region with increasing T. However, the quasiparticle shift is most strongly modified near the onset of plasmon excitations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Interplay of broken symmetry and delocalized excitations in the insulating state of 1 T –Ta⁢S 2

Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5⁢d transition-metal compounds, electron correlations alone generally do not lead to a metal-insulator (Mott) transition, with insulating behavior usually resulting from their coupling with magnetic ordering and/or structural distortions. 1⁢T–Ta⁢S 2 is a prototypical example of such correlated insulating behavior, with a high-symmetry metallic phase transforming into a distorted, charge-density wave (CDW) insulating state at low temperatures. The nature of the insulating phase as well as the existence and relevance of the localized electron physics remains debated. We resolve this standing controversy in 1⁢T–Ta⁢S 2 combining resonant inelastic x-ray spectroscopy and first-principles calculations. We observe five electronic excitations arising from the interband transitions of the Ta 5d orbitals and the S 3⁢p ligand state, with none of the excitations on the order of the Mott gap. These excitations cannot be explained within the framework of standard multiplet calculations that assume a localized wave function, but instead, are captured by a band-theory framework accounting for the low symmetry of the crystal field in the CDW state. Our findings suggest that the electronic properties of 1T–Ta⁢S 2 are dominated in the visible by both plasmonic quasiparticles and interband transitions, with no resonance associated with a putative Mott transition observed in the 0–3 eV energy range. Finally, our discovery provides insights into the electron localization and the Mott vs band-insulator debate in 1T–Ta⁢S 2 and other transition-metal materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Pump depletion and hot-electron generation in long-density-scale-length plasma with shock-ignition high-intensity laser

Two-dimensional particle-in-cell simulations for laser plasma interaction with laser intensity of 10 16 W/cm 2 , plasma density range of 0.01–0.28$n_c$, and scale length of 230–330 $\textit{μ}$m showed significant pump depletion of the laser energy due to stimulated Raman scattering (SRS) and stimulated Brillouin scattering (SBS) in the low-density region ($n_e$ = 0.01–0.2$n_c$). The simulations identified hot electrons generated by SRS in the low-density region with moderate energy and by two-plasmon-decay near $n_e$ = 0.25$n_c$ with higher energy. The overall hot electron temperature (46 keV) and conversion efficiency (3%) were consistent with the experiment's measurements. Further, the simulations also showed artificially reducing SBS would lead to stronger SRS and a softer hot-electron spectrum.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Cogeneration of hot electrons from multiple laser-plasma instabilities

Interactions of two plasmon decay (TPD) and side stimulated Raman scattering (SSRS) were studied using 3-D particle-in-cell simulations under ICF-relevant conditions for linearly and circularly polarized lasers. In the linear stage, SSRS took place under n e = 0.235n c and TPD dominated near the quarter-critical density surface and their growth rates agreed with theory. In the nonlinear stage, SSRS reduced TPD through pump depletion. Hot electrons were found to be first accelerated by the SSRS plasma waves and then by TPD plasma waves through a co-generation mechanism. Compared to the linearly polarized case with the same laser intensity, both SSRS and TPD were reduced due to the lower laser amplitude in the circularly-polarized case. As a result, a 30 percent decrease in hot electron flux was observed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Independent-hot-spot approach to multibeam laser-plasma instabilities

The independent-hot-spot model is used to develop an analytic formulation for multibeam laser-plasma instabilities in inhomogeneous plasmas. The model is applied to the absolute two-plasmon-decay instability and shows good agreement with simulations and experiments. Furthermore, the success of the model indicates the emergence of single-speckle behavior for sufficiently large speckles sizes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Casimir Light in Dispersive Nanophotonics

Time-varying optical media, whose dielectric properties are actively modulated in time, introduce a host of novel effects in the classical propagation of light, and are of intense current interest. In the quantum domain, time-dependent media can be used to convert vacuum fluctuations (virtual photons) into pairs of real photons. Here, we refer to these processes broadly as “dynamical vacuum effects” (DVEs). Despite interest for their potential applications as sources of quantum light, DVEs are generally very weak, presenting many opportunities for enhancement through modern techniques in nanophotonics, such as using media which support excitations such as plasmon and phonon polaritons. Here, we present a theory of weakly modulated DVEs in arbitrary nanostructured, dispersive, and dissipative systems. A key element of our framework is the simultaneous incorporation of time-modulation and “dispersion” through time-translation-breaking linear response theory. As an example, we use our approach to propose a highly efficient scheme for generating entangled surface polaritons based on time-modulation of the optical phonon frequency of a polar insulator.

42 ENGINEERING↗

Shock Ignition Laser-Plasma Interactions in Ignition-Scale Plasmas

Here, we use a subignition scale laser, the 30 kJ Omega, and a novel shallow-cone target to study laser-plasma interactions at the ablation-plasma density scale lengths and laser intensities anticipated for direct drive shock-ignition implosions at National Ignition Facility scale. Our results show that, under these conditions, the dominant instability is convective stimulated Raman scatter with experimental evidence of two plasmon decay (TPD) only when the density scale length is reduced. Particle-in-cell simulations indicate this is due to TPD being shifted to lower densities, removing the experimental back-scatter signature and reducing the hot-electron temperature. The experimental laser energy-coupling to hot electrons was found to be 1%–2.5%, with electron temperatures between 35 and 45 keV. Radiation-hydrodynamics simulations employing these hot-electron characteristics indicate that they should not preheat the fuel in MJ-scale shock ignition experiments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Search for Reactor-Produced Millicharged Particles with Skipper-CCDs at the CONNIE and Atucha-II Experiments

Millicharged particles, proposed by various extensions of the standard model, can be created in pairs by high-energy photons within nuclear reactors and can interact electromagnetically with electrons in matter. Recently, the existence of a plasmon peak in the interaction cross section with silicon in the eV range was highlighted as a promising approach to enhance low-energy sensitivities. The CONNIE and Atucha-II reactor neutrino experiments utilize Skipper-CCD sensors, which enable the detection of interactions in the eV range. We present world-leading limits on the charge of millicharged particles within a mass range spanning 6 orders of magnitude, derived through a comprehensive analysis and the combination of data from both experiments. Published by the American Physical Society 2025

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd 3 + ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. Here, we present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.

36 MATERIALS SCIENCE↗

Optimization of three-dimensional metamaterials for terahertz energy harvesting

This work focuses on finite element modeling (FEM) of a three-dimensional metamaterial used as an absorber for terahertz energy harvesting. The metamaterial consists of patterned pillars of an SU-8 dielectric photoresist coupled to a copper metal overlayer. Here, our study shows that the electromagnetic performance of the metamaterial is dependent on the following characteristic design parameters of the SU-8 dielectric: pillar height, bottom side length, and spacing between adjacent pillars. Using FEM, the metamaterial geometry is successfully optimized and the surface plasmon can be tuned to a peak frequency of 1.2 THz and a maximum terahertz absorption amplitude of 30%.

36 MATERIALS SCIENCE↗

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗

Electrically driven photon emission from individual atomic defects in monolayer WS 2

Quantum dot–like single-photon sources in transition metal dichalcogenides (TMDs) exhibit appealing quantum optical properties but lack a well-defined atomic structure and are subject to large spectral variability. Here, we demonstrate electrically stimulated photon emission from individual atomic defects in monolayer WS 2 and directly correlate the emission with the local atomic and electronic structure. Radiative transitions are locally excited by sequential inelastic electron tunneling from a metallic tip into selected discrete defect states in the WS 2 bandgap. Coupling to the optical far field is mediated by tip plasmons, which transduce the excess energy into a single photon. The applied tip-sample voltage determines the transition energy. Atomically resolved emission maps of individual point defects closely resemble electronic defect orbitals, the final states of the optical transitions. Inelastic charge carrier injection into localized defect states of two-dimensional materials provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.

74 ATOMIC AND MOLECULAR PHYSICS↗

ChAdOx1 interacts with CAR and PF4 with implications for thrombosis with thrombocytopenia syndrome

Vaccines derived from chimpanzee adenovirus Y25 (ChAdOx1), human adenovirus type 26 (HAdV-D26), and human adenovirus type 5 (HAdV-C5) are critical in combatting the severe acute respiratory coronavirus 2 (SARS-CoV-2) pandemic. As part of the largest vaccination campaign in history, ultrarare side effects not seen in phase 3 trials, including thrombosis with thrombocytopenia syndrome (TTS), a rare condition resembling heparin-induced thrombocytopenia (HIT), have been observed. This study demonstrates that all three adenoviruses deployed as vaccination vectors versus SARS-CoV-2 bind to platelet factor 4 (PF4), a protein implicated in the pathogenesis of HIT. We have determined the structure of the ChAdOx1 viral vector and used it in state-of-the-art computational simulations to demonstrate an electrostatic interaction mechanism with PF4, which was confirmed experimentally by surface plasmon resonance. These data confirm that PF4 is capable of forming stable complexes with clinically relevant adenoviruses, an important step in unraveling the mechanisms underlying TTS.

60 APPLIED LIFE SCIENCES↗