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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The dissociation constants of organic acids decrease (p K a values increase) when they are confined within silica nanopores filled with aqueous solutions. Nanoconfinement stabilizes the protonated species.
GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a 150 gm diameter achieved 840 V operation at 0.5 A/cm 2 reverse current leakage and a specific on-resistance of 1.2 mΩ•cm 2 . Etched-and-regrown diodes were compared with planar, regrown diodes without etching on the same wafer. Both types of diodes exhibited similar forward and reverse electrical characteristics, which indicate that etch-induced defectivity of the junction was sufficiently mitigated soas not to be the primary cause for leakage. An area dependence for forward and reverse leakage current density was observed, suggesting that the mesa sidewall provided a leakage path.
This paper provides modeling evidence for a new variant of microturbulence instability that regulates the electron thermal fluxes in the transport barrier region of DIII-D "high β p " discharges. This scenario is being investigated as a possible scenario for future steady-state reactors, and thus it is essential to understand the physics processes which govern its performance in order to confidently extrapolate to future devices. Additional analysis examining the extrapolation of this scenario to ITER shows that while the new microtearing mode identified here is unlikely to be unstable in that regime (due to increased temperatures and reduced collisionality), the large shift in magnetic axis (Shafranov shift) that arises in these plasmas may still favor stabilization of common ballooning instabilities which peak on the low field side, but destabilize electrostatic slab modes on the high field side.
Monolithic metallic glasses often exhibit work softening induced by high atom mobility in the supercooled liquid region in tension. In this work, we report an unusual viscous flow of the Pd 42.5 Ni 42.5 P 15 metallic glass in its supercooled liquid region, which is characterized by a remarkable hardening behavior with decent plasticity during tension. To unravel the causes of this unusual hardening, we conducted structural and thermodynamic analyses by employing several experiments, including dynamic mechanical analysis, differential scanning calorimetry, high-resolution transmission electron microscopy, and in situ heating synchrotron high-energy x-ray diffraction. It was found that the unusual hardening behavior was attributed to structural ordering during deformation, rather than nanocrystallization or structural relaxation observed, sometimes, in metallic glasses deformed in supercooled liquid region. We also incorporated an additional work hardening region in the modified deformation map for metallic glasses.
A top-illuminated deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately -140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al 0.6 Ga 0.4 N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of < 1 × 10 -8 A/cm 2 (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 10 4 is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate.
Here, we report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple was obtained.
Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N 2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. In conclusion, this work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.
Semiconducting conjugated polymers (CPs) have shown great potential in organic solar cells and organic field-effect transistors (OFETs), due to their tunable electronic and optical properties. In this study, we compare computational predictions of electronic and optical properties of ensembles of cis-polyacetylene (cis-PA) multiple oligomers in two different forms (a) undoped cis-PA and (b) cis-PA doped by phosphorous fluoride (PF¯ 6 ) via density functional theory (DFT) with hybrid functionals. The comparison of undoped cis-PA under the constraint of injected charge carrier and cis-PA doped by PF¯ 6 shows that either doping or injection provides very similar features in electronic structure and optical properties. Doped and injected are similar to each other and different from the pristine, undoped PA. Computed results also indicate that the injection of charge carriers and adding p-type doping into the semiconducting CP model both greatly affect the conductivity. Furthermore, these observations provide a better understanding and practical use of the properties of polyacetylene films for flexible electronic applications.
Abstract This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota. By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be 8.45 × 10 −11 ± 4.22 × 10 −12 cm 2 . Examination of the binding energy associated with cluster dipole states, formed by charge trapping onto dipole states during the freeze-out process, reveals a value of 0.034 ± 0.0017 meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter.
As a promising scenario for fusion reactors, the high poloidal-beta (β P ) scenario is characterized by a strong large radius internal transport barrier (ITB), which significantly enhances the overall confinement quality and the bootstrap current fraction for fully non-inductive operation. It is frequently observed that in the presence of a strong ITB, the pedestal height is lower and is accompanied by small edge localized modes (ELMs), which further improves the compatibility of a high performance core with an edge solution. A mechanism for the formation of the low pedestal is proposed in this paper. It is found that the strong ITB creates an off-axis bootstrap current to clamp the local safety factor q, and thus the magnetic shear in the outer core/pedestal region is increased. Gyrokinetic simulations with the CGYRO code show that the higher magnetic shear brings the experimental profiles into the range where the growth rate of drift-wave instabilities and thus transport is higher, and therefore a lower pedestal gradient is expected. Here, the combination of low pedestal and high magnetic shear further enhances the turbulent transport across the whole pedestal, consistent with power balance analysis. Such a positive feedback mechanism ultimately results in a lower pressure pedestal as observed in experiments. Under such a low pedestal, linear simulations with BOUT++ predict the growth rates of peeling–ballooning modes to be lower across the whole toroidal mode number spectra, and the nonlinear BOUT++ simulation exhibits lower saturated fluctuation intensity as well, consistent with the experimentally observed lower ELM size.
Abstract Summary pKa values of ionizable residues and isoelectric points of proteins provide valuable local and global insights about their structure and function. These properties can be estimated with reasonably good accuracy using Poisson–Boltzmann and Monte Carlo calculations at a considerable computational cost (from some minutes to several hours). pKPDB is a database of over 12 M theoretical pKa values calculated over 120k protein structures deposited in the Protein Data Bank. By providing precomputed pKa and pI values, users can retrieve results instantaneously for their protein(s) of interest while also saving countless hours and resources that would be spent on repeated calculations. Furthermore, there is an ever-growing imbalance between experimental pKa and pI values and the number of resolved structures. This database will complement the experimental and computational data already available and can also provide crucial information regarding buried residues that are under-represented in experimental measurements. Availability and implementation Gzipped csv files containing p Ka and isoelectric point values can be downloaded from https://pypka.org/pKPDB. To query a single PDB code please use the PypKa free server at https://pypka.org. The pKPDB source code can be found at https://github.com/mms-fcul/pKPDB. Supplementary information Supplementary data are available at Bioinformatics online.
A comprehensive 31 P nuclear magnetic resonance (NMR) study, combined with thermodynamic measurements and first-principles band-structure calculations, has been conducted to explore the ground state of the 𝑆=5/2 double trillium lattice antiferromagnet KSrFe 2 (PO 4 ) 3 . Our experimental results indicate that the magnetic ground state is neither a conventional three-dimensional (3D) long-range order (LRO) nor a pure gapless spin-liquid state, as conjectured previously [Boya et al., APL Mater. 10, 101103 (2022)]. Specifically, the observation of a nearly field-independent NMR linewidth below 𝑇* = (3.5 ± 0.4) K, and a significant enhancement of spin-spin relaxation rate 1/𝑇 2 below 2𝑇* (where 𝑇* is the characteristic temperature identified from the magnetic susceptibility), indicate a complex magnetic ground state where spin freezing coexists with persistent dynamics. Furthermore, we argue that the lack of magnetic LRO and the persistence of strong magnetic fluctuations in KSrFe 2 (PO 4 ) 3 are unlikely to originate from intersite K/Sr disorder, rather they arise due to intrinsic magnetic frustration. In conclusion, our findings position KSrFe 2 (PO 4 ) 3 into a broader family of geometrically frustrated magnets characterized by coexisting spin freezing and pronounced antiferromagnetic fluctuations, marking it as a promising platform for investigating exotic phenomena in 3D frustrated magnets.
We investigate the induced superconducting pair correlations in junctions between a conventional spin-singlet s-wave superconductor and a disordered normal metal. Decomposing the pair amplitude based on its symmetries in the time domain, we demonstrate that the odd-time, or equivalently odd-frequency, spin-singlet p-wave correlations are both significant in size and entirely robust against random nonmagnetic disorder. We find that these odd-frequency correlations can even be generated by disorder. Our results show that anisotropic odd-frequency pairing represent an important fraction of the proximity-induced correlations in disordered superconducting hybrid structures.
Spectroscopic strengths for the 18 F g , m ( d , p ) F 19 reactions to members of the ground-state band in F 19 are interpreted in the rotational model. The analysis considers two different coupling schemes, namely, the strong and decoupled limits of the particle rotor model to describe the ground and isomeric states of F 18 , as well as the transitions to the ground-state band in F 19 . Our results, obtained using Nilsson amplitudes for the neutron levels 1 2 [ 220 ] , 3 2 [ 211 ] , and 5 2 [ 202 ] calculated at a deformation ε 2 = 0.32 are in agreement with the measurements and USDB shell-model calculations.
Due to its importance as an astronomical observable in core-collapse supernovae (CCSNe), the reactions producing and destroying 44 Ti must be well constrained. Generally, statistical model calculations such as Hauser-Feshbach are employed when experimental cross sections are not available, but the variation in such adopted rates can be large. Here, data from the literature is compared with statistical model calculations of the 44 Ti(α,p) 47 V reaction cross section and used to constrain the possible reaction rate variation over the temperatures relevant to CCSNe. Suggestions for targeted future measurements are given.
The 6 Li(p,γ) 7 Be cross section influences a variety of astrophysical scenarios, including big-bang and stellar nucleosynthesis. In recent years, conflicting results of direct measurements have been published, reporting contradictory low-energy trends. To shed light on the contradiction between the existing data sets, the reaction was studied using the asymptotic normalization coefficient (ANC) technique which was up-to-now never used for this reaction. To derive the ANC, the 6 Li( 3 He,d) 7 Be transfer reaction, studied at the Department of Physics and Astronomy of the University of Catania and at the John. D. Fox Superconducting Accelerator Laboratory at Florida State University, was re-analyzed, focusing on the proton transfer mechanism [the α transfer process is discussed by Kiss et al. [Phys. Lett. B 807, 135606 (2020)]. Here, the energy of the 3 He beam impinging on a 6 Li target was E lab = 3 MeV and E lab = 5 MeV. The yield of the emitted deuterons was measured with high precision by using silicon ΔE – E telescopes.
In this work, the exotic β -delayed proton emission is calculated in 11 Be from first principles using chiral two- and three-nucleon forces. To investigate the unexpectedly large branching ratio measured in Ayyad et al. [Phys. Rev. Lett. 123, 082501 (2019)], we calculate the proposed (1/2 + , 1/2) proton resonance in 11 B using the no-core shell model with continuum. This calculation helps to address whether this enhancement is caused by unknown dark decay modes or an unobserved proton resonance. We report a branching ratio of $b_p$ = (1.3 ± 0.5) × 10 –6 , suggesting that its unexpectedly large value is caused by an unobserved proton resonance in 11 B.
The γ-decay properties of an excited state in 26 Al at 6398.3(8) keV have been reexamined using the 11 B+ 16 O fusion-evaporation reaction. This level represents a key 93.1(8)-keV resonance in the 25 Mg+p system and its relative branching to the 26 Al ground state, f 0 , has been determined to be 0.76 ± 0.03 (stat.) ± 0.10 (syst.). Furthermore, this is a significantly higher value than the most recent evaluation and implies a considerable increase in the production of cosmic γ rays from 26 Al radioactivity.