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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

The origin of facet selectivity and alignment in anatase TiO 2 nanoparticles in electrolyte solutions: implications for oriented attachment in metal oxides

Atomic-to-mesoscale simulations were used to reveal the origin of oriented attachment between anatase TiO2 nanoparticles in aqueous HCl solutions. Analysis of the distance and pH dependence of interparticle interactions demonstrates that ion correlation forces are responsible for facet-specific attraction and rotation into lattice co-alignment at long-range. These forces give rise to a metastable solvent separated capture minimum on the disjoining pressure-distance curve, with the barrier to attachment largely due to steric hydration forces from structured intervening solvent.

crystal growth↗
DOE OSTI2011

Influence of growth rate on the epitaxial orientation and crystalline quality of CeO 2 thin films grown on Al 2 O 3 (0001)

Growth rate-induced epitaxial orientations and crystalline quality of CeO 2 thin films grown on Al 2 O 3 (0001) by oxygen plasma-assisted molecular beam epitaxy were studied using in-situ and ex-situ characterization techniques. CeO 2 grows as three-dimensional (3-D) islands and two-dimensional (2-D) layers at growth rates of 1-7 Å/min, and ≥9 Å/min, respectively. The formation of epitaxial CeO 2 (100) and CeO2(111) thin films occurs at growth rates of 1 Å/min and ≥ 9 Å/min, respectively. Glancing incidence x-ray diffraction (GIXRD) measurements have shown that the films grown at intermediate growth rates (2-7 Å/min) consist of polycrystalline CeO 2 along with CeO 2 (100). The thin film grown at 1 Å/min exhibits six in-plane domains, characteristic of well-aligned CeO 2 (100) crystallites. The content of the poorly-aligned CeO 2 (100) crystallites increases with increasing growth rate from 2 Å/min to 7 Å/min, and three out of six in-plane domains gradually decrease and eventually disappear, as confirmed by XRD pole figures. At growth rates ≥9 Å/min, CeO 2 (111) film with single in-plane domain was identified. The formation of CeO 2 (100) 3-D islands at growth rates of 1-7 Å/min is a kinetically driven process unlike at growth rates ≥9 Å/min which result in an energetically and thermodynamically more stable CeO 2 (111) surface.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Magnetic and transport properties of Mn{sub 2}CoAl oriented films

The structure, magnetic, and transport properties of thin films of the Heusler ferrimagnet Mn{sub 2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs substrates and the structure was found to transform from tetragonal to cubic for increasing annealing temperature. The anomalous Hall resistivity is found to be proportional to the square of the longitudinal resistivity and magnetization expected for a topological Berry curvature origin. A delicate balance of the spin-polarized carrier type when coupled with voltage gate-tuning could significantly impact advanced electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Effect of injected spins with different polarized orientations on the superconductivity of La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/La{sub 1.85}Sr{sub 0.15}CuO{sub 4} thin films

The influence of spin-polarized quasi-particle injection on the superconductivity of epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/La{sub 1.85}Sr{sub 0.15}CuO{sub 4} composite thin films is systematically investigated. Different electrode configurations on the same specimen are designed to study the role of spin injection. It is found that the upper critical field and flux pinning potential are reduced by the spin injection, especially for the field parallel to ab-plane. The manipulation of superconductivity by the spin polarization orientations of injected quasi-particles possibly originates from the different suppressions on the superconducting pairing strength, which is considered to be related to the local antiferromagnetic spin fluctuations in La{sub 1.85}Sr{sub 0.15}CuO{sub 4}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Position- and orientation-controlled polarized light interaction of individual indium tin oxide nanorods

We have systematically investigated the position, orientation, and polarization angle dependence of scattered light from well-characterized, indium tin oxide nanorods (ITO NRs) upon illumination with monochromatic light. Scattering signals from individual ITO NRs of horizontal and vertical configurations are probed quantitatively by examining signal response with respect to the analyzer angle and position along the length of the NR. Our efforts can be highly beneficial in providing fundamental understanding for the light interaction behavior of ITO NRs. Our results can provide valuable bases for comprehending optical emission from individual NRs, with their ever-growing applications in optoelectronics, photonics, and biosensing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution

In this paper, we use a tight binding Hamiltonian with spin orbit coupling to study the real and complex band structures of relaxed and strained GaAs. A simple d orbital on-site energy shift coupled with appropriate scaling of the off-diagonal terms is found to correctly reproduce the band-edge shifts with strain. Four different 〈100〉 strain combinations, namely, uniaxial compressive, uniaxial tensile, biaxial compressive, and biaxial tensile strain are studied, revealing rich valence band structure and strong relative orientation dependent tunneling. It is found that complex bands are unable to provide unambiguous tunneling paths away from the Brillouin zone center. Tunneling current density distribution over the Brillouin zone is computed using non-equilibrium Green's function approach elucidating a physical picture of band to band tunneling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge crystals on flexible-plastic directly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p-type conductions. Here, hole concentrations are 2.2 × 10{sup 17} and 5.8 × 10{sup 20} cm{sup −3} for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and Al in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160 cm{sup 2} V{sup −1} s{sup −1}) compared with AIC-Ge (37 cm{sup 2} V{sup −1} s{sup −1}). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence

We report an investigation of electric-field (EF) control of spin re-orientation as functions of the thicknesses of CoFeB free layer (FL) and MgO layer in synthetic-antiferromagnetic pinned magnetic tunnel junctions with perpendicular magnetic anisotropy. It is found that the EF modulates the coercivity (Hc) of the FL almost linearly for all FL thicknesses, while the EF efficiency, i.e., the slope of the linearity, increases as the FL thickness increases. This linear variation in Hc is also observed for larger MgO thicknesses (≥1.5 nm), while the EF efficiency increases only slightly from 370 to 410 Oe nm/V when MgO thickness increases from 1.5 to 1.76 nm. We have further observed the absence of quasi-DC unipolar switching. We discuss its origin and highlight the underlying challenges to implement the EF controlled switching in a practical magnetic memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Crystallographic analysis of rock grain orientation at meso- and microscale levels

This paper studies the results of electron backscatter diffraction analysis of naturally deformed polycrystalline olivine. It also defines the dependence of lattice-preferred orientations of grains on their microstructural position and size. The authors detect the basic mechanisms, consequence and thermal dynamic modes of deformation. They also show that the development of a polycrystalline structure is determined by the following consecutive activation of sliding systems (010)[100] → (0kl)[100] → (100)[010] → (100)[001] → (110)[001], when dislocation sliding and diffusion creep change under the temperature decrease from 1000°C to 650°C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Orientation dependences of atomic structures in chemically heterogeneous Cu{sub 50}Ta{sub 50}/Ta glass-crystal interfaces

Molecular dynamics simulations based on an angular-dependent potential were performed to examine the structural properties of chemically heterogeneous interfaces between amorphous Cu{sub 50}Ta{sub 50} and crystalline Ta. Several phenomena, namely, layering, crystallization, intermixing, and composition segregation, were observed in the Cu{sub 50}Ta{sub 50} region adjacent to the Ta layers. These interfacial behaviors are found to depend on the orientation of the underlying Ta substrate: Layering induced by Ta(110) extends the farthest into Cu{sub 50}Ta{sub 50}, crystallization in the Cu{sub 50}Ta{sub 50} region is most significant for interface against Ta(100), while inter-diffusion is most pronounced for Ta(111). It turns out that the induced layering behavior is dominated by the interlayer distances of the underlying Ta layers, while the degree of inter-diffusion is governed by the openness of the Ta crystalline layers. In addition, composition segregations are observed in all interface models, corresponding to the immiscible nature of the Cu-Ta system. Furthermore, Voronoi polyhedra 〈0,5,2,6〉 and 〈0,4,4,6〉 are found to be abundant in the vicinity of the interfaces for all models, whose presence is believed to facilitate the structural transition between amorphous and body centered cubic.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Structural study of growth, orientation and defects characteristics in the functional microelectromechanical system material aluminium nitride

The real structure and morphology of piezoelectric aluminum nitride (AlN) thin films as essential components of magnetoelectric sensors are investigated via advanced transmission electron microscopy methods. State of the art electron diffraction techniques, including precession electron diffraction and automated crystal orientation mapping (ACOM), indicate a columnar growth of the AlN grains optimized for piezoelectric application with a (0 0 0 1) texture. Comparing ACOM with piezoresponse force microscopy measurements, a visual correlation of the structure and the piezoelectric properties is enabled. With a quantitative analysis of the ACOM measurements, a statistical evaluation of grain rotations is performed, indicating the presence of coincidence site lattices with Σ7, Σ13a, Σ13b, Σ25. Using a geometric phase analysis on high resolution micrographs, the occurrence of strain is detected almost exclusively at the grain boundaries. Moreover, high resolution imaging was applied for solving the atomic structure at stacking mismatch boundaries with a displacement vector of 1/2 〈1 0 -1 1〉. All real structural features can be interpreted via simulations based on crystallographic computing in terms of a supercell approach.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of injected spins with different polarized orientations on the vortex phase transition in La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/La{sub 1.85}Sr{sub 0.15}CuO{sub 4} heterostructure

The current-voltage (I-V) characteristics with spin injection were investigated for the epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/La{sub 1.85}Sr{sub 0.15}CuO{sub 4} heterostructure rotated from H//c to H//ab in magnetic fields up to 14 T. It is found that all the I-V curves in various magnetic fields can be scaled with a three dimensional (3D) vortex glass model, and the spin injection can induce a better 3D scaling behavior, which is closely related to the decrease of the anisotropy parameter. A vortex phase diagram for the evolution of vortex glass transition field (H{sub g}) and upper critical field (H{sub c2}) indicates that both H{sub g} and H{sub c2} are suppressed by spin injection, and this effect becomes more obvious in the case of H//ab, which probably originates from the different suppression on the superconducting pairing strength by different injected spins' orientations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Three-point bending analysis of doubly clamped silicon nanowire beams; Young's modulus, initial stress, and crystal orientation

A non-linear model is introduced describing the force-deflection relation of doubly clamped beams, including initial stress. Several approximations for the exact model are developed and compared, revealing the importance of considering the initial stress during 3-point bending measurements analysis. A novel approximation is found to be better than others, and both the exact model and this approximation are in perfect agreement with finite element simulations. A brief experimental example of silicon nanowires is presented in which the Young's modulus, the initial stress, and the crystallographic growth orientation are extracted by 3-point bending analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optically confined polarized resonance Raman studies in identifying crystalline orientation of sub-diffraction limited AlGaN nanostructure

An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic assisted characterization tools are only relevant in spectroscopic studies of nanoscale object in the sub-diffraction limit. We have reported polarized resonance Raman spectroscopic (RRS) studies with strong electron-phonon coupling to understand the crystalline orientation of a single AlGaN nanowire of diameter ∼100 nm. AlGaN nanowire is grown by chemical vapor deposition technique using the catalyst assisted vapor-liquid-solid process. The results are compared with the high resolution transmission electron microscopic analysis. As a matter of fact, optical confinement effect due to the dielectric contrast of nanowire with respect to that of surrounding media assisted with electron-phonon coupling of RRS is useful for the spectroscopic analysis in the sub-diffraction limit of 325 nm (λ/2N.A.) using an excitation wavelength (λ) of 325 nm and near ultraviolet 40× far field objective with a numerical aperture (N.A.) value of 0.50.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Orientation dependent fracture behavior of nanotwinned copper

Columnar grown nanotwinned Cu was tensile tested in-situ inside the TEM in combination with automated crystal orientation mapping scanning transmission electron microscopy to investigate the active deformation mechanisms present in this material. Two tensile directions were applied, one parallel to the twin boundaries and the other perpendicular to the twin boundaries. In case of tensile testing perpendicular to the twin boundaries, the material deformed by detwinning and the formation of new grains, whereas in the parallel case, no new grains were formed and the fracture happened along the twin boundaries and a boundary that has formed during the deformation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Orientation of bluff body for designing efficient energy harvesters from vortex-induced vibrations

The characteristics and performances of four distinct vortex-induced vibrations (VIVs) piezoelectric energy harvesters are experimentally investigated and compared. The difference between these VIV energy harvesters is the installation of the cylindrical bluff body at the tip of cantilever beam with different orientations (bottom, top, horizontal, and vertical). Experiments show that the synchronization regions of the bottom, top, and horizontal configurations are almost the same at low wind speeds (around 1.5 m/s). The vertical configuration has the highest wind speed for synchronization (around 3.5 m/s) with the largest harvested power, which is explained by its highest natural frequency and the smallest coupled damping. The results lead to the conclusion that to design efficient VIV energy harvesters, the bluff body should be aligned with the beam for low wind speeds (<2 m/s) and perpendicular to the beam at high wind speeds (>2 m/s)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Polarity enhancement in high oriented ZnO films on Si (100) substrate

Zinc oxide films with hexagonal crystal structures have been grown on Si substrate (100) using the DC-unbalanced magnetron sputtering at temperature of 300°C with growth time variation. The films have been characterized using X-Ray Diffraction and Fourier Transform Infrared measurement to show the crystal parameter and atomic bonding. The results show that the films have a dominant orientation in the hkl plane (002), while peak positions are shift to lower diffraction angle with addition of growth time. In addition, the bonding between Zn and O atoms (Zn-O) tend to be weaker as indicated by transmittance peak shifting to lower energy. The weakening of Zn-O bonding is due to the contribution of addition of bond length. These conditions make the films tend to have a high polarity. Further analysis of these studies will bring us to have a good undestanding to explain the ferroelectric properties of the ZnO films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗