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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Study of the crystal device for deflecting high-energy proton beams using synchrotron radiation diffraction

Currently, bent silicon single crystals are used at large accelerators to extract and collimate proton beams. A device for multiple deflection of a proton beam based on several bent silicon strips operating in the volume reflection mode has recently been developed. In this device, the bending of silicon strips successively located on the surface of a thick plate is implemented due to the internal stress induced by grooves mechanically formed on the crystal surface (Twyman effect). Topography based on angular scanning and synchrotron radiation was applied to measure the bending of individual deflector strips and the crystal as a whole. The measurement results are compared with the data obtained with a proton beam.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
DOE OSTI2019

First principles simulation of ultracold ion crystals in a Penning trap with Doppler cooling and a rotating wall potential

A direct numerical simulation of many interacting ions in a Penning trap with a rotating wall is presented. The ion dynamics is modeled classically. Both axial and planar Doppler laser cooling processes are modeled using stochastic momentum impulses based on two-level atomic scattering rates. The plasmas being modeled are ultracold two-dimensional crystals made up of hundreds of ions. We compare Doppler cooled results directly to a previous linear eigenmodes analysis. Agreement in both frequency and mode structure is obtained. Additionally, when Doppler laser cooling is applied, the laser cooled steady state plasma axial temperature agrees with the Doppler cooling limit. Numerical simulations using the approach described and benchmarked here will provide insights into the dynamics of large trapped-ion crystals, improving their performance as a platform for quantum simulation and sensing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Synthesis and oxygen content dependent properties of hexagonal DyMnO[subscript 3+delta]

Oxygen deficient polycrystalline samples of hexagonal P6{sub 3}cm (space group No.185) DyMnO{sub 3+{delta}} ({delta} < 0) were synthesized in Ar by intentional decomposition of its perovskite phase obtained in air. The relative stability of these phases is in accord with our previous studies of the temperature and oxygen vacancy dependent tolerance factor. Thermogravimetric measurements have shown that hexagonal samples of DyMnO{sub 3+{delta}} (0 {le} {delta} {le} 0.4) exhibit unusually large excess oxygen content, which readily incorporates on heating near 300 C in various partial-pressures of oxygen atmospheres. Neutron and synchrotron diffraction data show the presence of two new structural phases at {delta} {approx} 0.25 (Hex{sub 2}) and {delta} {approx} 0.40 (Hex{sub 3}). Rietveld refinements of the Hex{sub 2} phase strongly suggest it is well modeled by the R3 space group (No.146). These phases were observed to transform back to P6{sub 3}cm above {approx} 350 C when material becomes stoichiometric in oxygen content ({delta} = 0). Chemical expansion of the crystal lattice corresponding to these large changes of oxygen was found to be 3.48 x 10{sup -2} mol{sup -1}. Thermal expansion of stoichiometric phases were determined to be 11.6 x 10{sup -6} and 2.1 x 10{sup -6} K{sup -1} for the P6{sub 3}cm and Hex{sub 2} phases, respectively. Our measurements also indicate that the oxygen non-stoichiometry of hexagonal RMnO{sub 3+{delta}} materials may have important influence on their multiferroic properties.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

A wide variety of liquid and solid phase crystallized silicon films are investigated in order to determine the performance limiting defect types in crystalline silicon thin-film solar cells. Complementary characterization methods, such as electron spin resonance, photoluminescence, and electron microscopy, yield the densities of dangling bond defects and dislocations which are correlated with the electronic material quality in terms of solar cell open circuit voltage. The results indicate that the strongly differing performance of small-grained solid and large-grain liquid phase crystallized silicon can be explained by intra-grain defects like dislocations rather than grain boundary dangling bonds. A numerical model is developed containing both defect types, dislocations and dangling bonds, describing the experimental results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Results for aliovalent doping of CeBr{sub 3} with Ca{sup 2+}

Despite the outstanding scintillation performance characteristics of cerium tribromide (CeBr{sub 3}) and cerium-activated lanthanum tribromide, their commercial availability and application are limited due to the difficulties of growing large, crack-free single crystals from these fragile materials. This investigation employed aliovalent doping to increase crystal strength while maintaining the optical properties of the crystal. One divalent dopant (Ca{sup 2+}) was used as a dopant to strengthen CeBr{sub 3} without negatively impacting scintillation performance. Ingots containing nominal concentrations of 1.9% of the Ca{sup 2+} dopant were grown, i.e., 1.9% of the CeBr{sub 3} molecules were replaced by CaBr{sub 2} molecules, to match our target replacement of 1 out of 54 cerium atoms be replaced by a calcium atom. Precisely the mixture was composed of 2.26 g of CaBr{sub 2} added to 222.14 g of CeBr{sub 3}. Preliminary scintillation measurements are presented for this aliovalently doped scintillator. Ca{sup 2+}-doped CeBr{sub 3} exhibited little or no change in the peak fluorescence emission for 371 nm optical excitation for CeBr{sub 3}. The structural, electronic, and optical properties of CeBr{sub 3} crystals were studied using the density functional theory within the generalized gradient approximation. Calculated lattice parameters are in agreement with the experimental data. The energy band structures and density of states were obtained. The optical properties of CeBr{sub 3}, including the dielectric function, were calculated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Crystal field disorder effects in the optical spectra of Nd{sup 3+} and Yb{sup 3+}-doped calcium lithium niobium gallium garnets laser crystals and ceramics

The optical spectroscopic properties of RE{sup 3+} (Nd, 1 at. % or Yb, 1 to 10 at. %)-doped calcium-lithium-niobium-gallium garnet (CLNGG) single crystals and ceramics in the 10 K-300 K range are analyzed. In these compositionally disordered materials, RE{sup 3+} substitute Ca{sup 2+} in dodecahedral sites and the charge compensation is accomplished by adjusting the proportion of Li{sup +}, Nb{sup 5+}, and Ga{sup 3+} to the doping concentration. The crystals and ceramics show similar optical spectra, with broad and structured (especially at low temperatures) bands whose shape depends on temperature and doping concentration. At 10 K, the Nd{sup 3+4}I{sub 9/2}{yields}{sup 4}F{sub 3/2,5/2} and Yb{sup 3+2}F{sub 7/2}{yields}{sup 2}F{sub 5/2} absorption bands, which show prospect for diode laser pumping, can be decomposed in several lines that can be attributed to centers with large differences in the crystal field. The positions of these components are the same, but the relative intensity depends on the doping concentration and two main centers dominate the spectra. Non-selective excitation evidences broad emission bands, of prospect for short-pulse laser emission, whereas the selective excitation reveals the particular emission spectra of the various centers. The modeling reveals that the nonequivalent centers correspond to RE{sup 3+} ions with different cationic combinations in the nearest octahedral and tetrahedral coordination spheres, and the most abundant two centers have 4Nb and, respectively, 3Nb1Li in the nearest octahedral sphere. At 300 K, the spectral resolution is lost. It is then inferred that the observed optical bands are envelopes of the spectra of various structural centers, whose resolution is determined by the relative contribution of the temperature-dependent homogeneous broadening and the effects of crystal field disordering (multicenter structure, inhomogeneous broadening). The relevance of spectroscopic properties for selection of pumping conditions and of laser design that would enable utilization of the broad optical bands for efficient laser emission and reduced heat generation is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Identifying, studying and making good use of macromolecular crystals

As technology advances, the crystal volume that can be used to collect useful X-ray diffraction data decreases. The technologies available to detect and study growing crystals beyond the optical resolution limit and methods to successfully place the crystal into the X-ray beam are discussed. Structural biology has contributed tremendous knowledge to the understanding of life on the molecular scale. The Protein Data Bank, a depository of this structural knowledge, currently contains over 100 000 protein structures, with the majority stemming from X-ray crystallography. As the name might suggest, crystallography requires crystals. As detectors become more sensitive and X-ray sources more intense, the notion of a crystal is gradually changing from one large enough to embellish expensive jewellery to objects that have external dimensions of the order of the wavelength of visible light. Identifying these crystals is a prerequisite to their study. This paper discusses developments in identifying these crystals during crystallization screening and distinguishing them from other potential outcomes. The practical aspects of ensuring that once a crystal is identified it can then be positioned in the X-ray beam for data collection are also addressed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se 2 Thin Film

Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage coevaporation process on molybdenum coated glass substrate. Here, a vapor treatment was done in between the second and third stage by flashing CuCl 2 for 5 mins at 400 °C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization.

14 SOLAR ENERGY↗
NASA NTRS1994

Effects of Ice-Crystal Structure on Halo Formation: Cirrus Cloud Experimental and Ray-Tracing Modeling Studies

During the 1986 Project FIRE (First International Satellite Cloud Climatology Project Regional Experiment) field campaign, four 22 deg halo-producing cirrus clouds were studied jointly from a ground-based polarization lidar and an instrumented aircraft. The lidar data show the vertical cloud structure and the relative position of the aircraft, which collected a total of 84 slides by impaction, preserving the ice crystals for later microscopic examination. Although many particles were too fragile to survive impaction intact, a large fraction of the identifiable crystals were columns and radial bullet rosettes, with both displaying internal cavitations and radial plate-column combinations. Particles that were solid or displayed only a slight amount of internal structure were relatively rare, which shows that the usual model postulated by halo theorists, i.e., the randomly oriented, solid hexagonal crystal, is inappropriate for typical cirrus clouds. With the aid of new ray-tracing simulations for hexagonal hollow-ended column and bullet-rosette models, we evaluate the effects of more realistic ice-crystal structures on halo formation and lidar depolarization and consider why the common halo is not more common in cirrus clouds.

Sassen, Kenneth↗
DOE OSTI2021

Observation of large Rashba spin–orbit coupling at room temperature in compositionally engineered perovskite single crystals and application in high performance photodetectors

Indirect absorption extended below the direct transition edge and increase in carrier lifetime derived from Rashba spin–orbit coupling may advance the optoelectronic applications of metal halide perovskites. Spin-orbit coupling in halide perovskites is due to the presence of heavy elements in their structure. However, when these materials lack an inversion symmetry, for example by the application of strain, spin–orbit coupling becomes odd in the electron’s momentum giving rise to a splitting in the electronic energy bands. Here we report on the observation of a large Rashba splitting of 117 meV at room temperature, as predicted by relativistic first-principles calculations, in halide perovskite single crystals through a facile compositional engineering approach. Partial substitution of organic cations by rubidium in single crystals induces significant indirect absorption and dual peak photoluminescence as a result of a large Rashba splitting. We measured circularly polarized photoluminescence and magneto-photoluminescence in perovskite films printed by single crystals as well as magneto-electroluminescence and magneto-photocurrent in spin-LEDs based on perovskite single crystals. They indicated significant spin-momentum locking due to the large Rashba effect. A hybrid perovskite single crystal photodetector achieved record figures of merit, including detectivity of more than 1.3 × 10 18 Jones which represents a three orders of magnitude improvement compared to the to date record. Furthermore, these findings show that facile compositional engineering of perovskite single crystals holds great promise for further advancing the optoelectronic properties of existing materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Detailed diffraction imaging of x-ray optics crystals with synchrotron radiation

Rocking curve topography at the Advanced Photon Source’s beamline 1-BM measures the x-ray reflection from large (many cm 2 ) flat crystals on a sub-mm scale with microradian angular resolution. The $(01\bar{1}1)$ reflection at 8 keV is uniform across the crystal and close to theory for three thick quartz wafers well-polished with increasingly finer grit. However, the reflection is non-uniform for some ~ 0.1mmthin, bendable crystals that are made flat by optical contact with a flat substrate. Here, these thin crystals are bent to serve in certain x-ray diagnostics of plasmas, and similar non-uniformities could then occur in bent crystals as well. The same detail in x-ray reflection in bent crystals is unachievable with the existing topography setup: one way to get the desired resolution is with a standard microfocusing approach.

47 OTHER INSTRUMENTATION↗
DOE OSTI2012

Solid-State Structure and Crystallization in Double-Crystalline Diblock Copolymers of Linear Polyethylene and Hydrogenated Polynorbornene

Double-crystalline diblock copolymers of linear polyethylene (LPE) and hydrogenated polynorbornene (hPN) are synthesized, and their crystallization behavior and morphology are examined using small-angle (SAXS) and wide-angle X-ray scattering (WAXS). In symmetric hPN/LPE diblocks with molecular weights above 50 kg/mol, the hPN block has previously been shown to crystallize first and set the solid-state microstructure. Two-dimensional WAXS on hand-drawn fiber specimens reveals that the LPE crystals formed in confinement stack orthogonally to the hPN crystals. By adjusting total molecular weight, the order of block crystallization may be reversed, even while holding the block length ratio fixed. At a diblock molecular weight of 20 kg/mol, simultaneous time-resolved SAXS/WAXS reveals that the LPE block crystallizes first, even when LPE is the minority component, and restricts hPN to crystallize between the LPE lamellae. The relative orientation of the LPE and hPN crystals in the lower molecular weight diblocks is examined by modeling changes in the SAXS primary peak intensity on cooling two diblocks through the hPN crystal-crystal transition, where hPN densifies as it adopts a rotationally ordered crystal structure. Only a perpendicular stacking of hPN and LPE crystals consistently yields the large reduction in primary SAXS peak intensity observed for both diblocks. Thus, even though the templating block switches from hPN to LPE as the diblock molecular weight is reduced, the orthogonal stacking motif is retained for both high- and low-molecular-weight copolymers.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Study of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors with varying pixel sizes

Here, we evaluated the sub-pixel position resolution achievable in large-volume CdZnTe pixelated detectors with conventional pixel patterns and for several different pixel sizes: 2.8 mm, 1.72 mm, 1.4 mm and 0.8 mm. Achieving position resolution below the physical dimensions of pixels (sub-pixel resolution) is a practical path for making high-granularity position-sensitive detectors, <100 μμm, using a limited number of pixels dictated by the mechanical constraints and multi-channel readout electronics. High position sensitivity is important for improving the imaging capability of CZT gamma cameras. It also allows for making more accurate corrections of response non-uniformities caused by crystal defects, thus enabling use of standard-grade (unselected) and less expensive CZT crystals for producing large-volume position-sensitive CZT detectors feasible for many practical applications. We analyzed the digitized charge signals from a representative 9 pixels and the cathode, generated using a pulsed-laser light beam focused down to 10 m (650 nm) to scan over a selected 3×3 pixel area. We applied our digital pulse processing technique to the time-correlated signals captured from adjacent pixels to achieve and evaluate the capability for sub-pixel position resolution. As an example, we also demonstrated an application of 3D corrections to improve the energy resolution and positional information of the events for the tested detectors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ettringite hysteresis under sorption from molecular simulations

Highlights: • Hybrid Grand Canonical Monte Carlo (GCMC) and Molecular Dynamics (MD) simulations are performed. • Anisotropic large strain coefficient of crystal shrinkage of ettringite is provided. • Entropy increases when ettringite converts into metaettringite. • Sorption-induced stress may lead to columns collapse upon drying. • H-bonds involving OH groups in columns play a role in hysteresis. The response of ettringite under sorption is critical for the utilization of this mineral as an energy storage material and to understand the concrete durability problems associated with ettringite formation. We report molecular simulations directly sampling the osmotic ensemble to understand the sorption processes and structural changes in ettringite-metaettringite transition. Desorption branch and sorption-induced volume changes from simulations agree with the experiments. The structural changes at low relative humidity are analyzed, revealing for the first time details of metaettringite structure. The reversibility under sorption observed experimentally is captured by simulation in the ettringite domain. The reversibility in the conversion of metaettringite into ettringite is not captured by the direct simulations in the osmotic ensemble due to the large volume changes associated with ettringite desorption. Finally, we discuss the role of hydrogen bonds on the hysteresis in ettringite.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ionic Liquid Gating of SrTiO 3 Lamellas Fabricated with a Focused Ion Beam

Here, in this work, we combine two previously incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for this integration is nanometer-scale surface damage inherent to any FIB-based fabrication. We address this by using a sacrificial protective layer to preserve a selected pristine surface. The test case presented here is accumulation of 2D carriers by ionic liquid gating at the surface of a micron-scale SrTiO 3 lamella. Preservation of surface quality is reflected in superconductivity of the accumulated carriers. This technique opens new avenues for realizing electrostatic charge tuning in materials that are not available as large or exfoliatable single crystals, and for patterning the geometry of the accumulated carriers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗