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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Understanding the Effects of Inhomogeneities at the Back Interface of CdTe‐Based Solar Cells Using 2D Modeling

One-dimensional modeling cannot capture lateral inhomogeneities in CdTe-based devices. Here, we use 2D modeling to investigate the role of varying energetics at the back interface. We consider improvements in the back interface layer (BIL) through either reducing back surface recombination velocity (BSRV) or decreasing the downward band bending near the back interface. We show that when the BSRV is reduced, but strong downward band bending remains, there is no change in the device performance until the BSRV of 90% of the back interface is improved by the BIL. On the other hand, any coverage with a BIL that improves band bending results in device improvements. We use band bending, back interface recombination current densities, and voltage dependent current flow through the device to understand these improvements. The modeling shows that lateral flow of carriers greatly affects device performance, which is not captured in parallel diode modeling, and demonstrates improved understanding with 2D modeling.

2D modelling↗
DOE OSTI2019

Characteristics of Bi-metallic Interfaces Formed During Direct Energy Deposition Additive Manufacturing Processing

Various additive manufacturing processes are being evaluated to reduce the time and cost for fabrication of low volume, complex, and multifunctional assemblies. This study evaluated two direct energy deposition processes for the fabrication of large bi-metallic structures. The materials evaluated were Inconel 625 and copper alloy C18150, which are used in various high heat flux applications. Inconel was deposited onto the C18150 substrate using blown powder and wire-fed processes. Complete bonding was obtained in both processes and the resulting interfaces were evaluated using microscopy and indentation testing. Differences were observed in the interface region suggesting the kinetic energy of the blown powder process resulted in more residual stress at the interface, promoting recrystallization and enhanced diffusion. This created a broader interface in the blown powder specimens compared to a narrower mechanically mixed interface with the wire-fed process.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Glide dislocation nucleation from dislocation nodes at semi-coherent {111} Cu–Ni interfaces

Using atomistic simulations and dislocation theory on a model system of semi-coherent {1 1 1} interfaces, we show that misfit dislocation nodes adopt multiple atomic arrangements corresponding to the creation and redistribution of excess volume at the nodes. We identified four distinctive node structures: volume-smeared nodes with (i) spiral or (ii) straight dislocation patterns, and volume-condensed nodes with (iii) triangular or (iv) hexagonal dislocation patterns. Volume-smeared nodes contain interfacial dislocations lying in the Cu–Ni interface but volume-condensed nodes contain two sets of interfacial dislocations in the two adjacent interfaces and jogs across the atomic layer between the two adjacent interfaces. Finally, under biaxial tension/compression applied parallel to the interface, we show that the nucleation of lattice dislocations is preferred at the nodes and is correlated with the reduction of excess volume at the nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Deformation response of AgCu interfaces investigated by in situ and ex situ TEM straining and MD simulations

The mechanisms of strain transfer across Ag/Cu interfaces were determined by a combination of in situ and ex situ TEM straining experiments and molecular dynamics simulations. Minimizing the magnitude of the Burgers vector of the residual dislocation generated in the interface was the dominant factor for determining the outcome of dislocation and deformation twin interactions with both non-coherent twin and cube-on-cube interfaces. This included the unexpected finding, due to the loading condition, of deformation twin activation in the Cu layer due to the intersection of deformation twins in Ag with the interface. As a result, deformation twin nucleation in Ag from the non-coherent twin interfaces was also explained by a Burgers vector minimization argument.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Transmission electron microscopy of the rapid solidification microstructure evolution and solidification interface velocity determination in hypereutectic Al-20at.%Cu after laser melting

The evolution of rapid solidification (RS) microstructure and solidification interface velocity has been studied experimentally by in-situ transmission electron microscopy and postmortem characterization for hypereutectic Al-20at.%Cu (37 wt.%Cu) after laser melting. Four morphologically distinct regions formed via growth modes changing from θ-Al 2 Cu phase dendrites to eutectic cell growth, possibly α-Al dendrite growth (α-cell), banded growth, and α-Al plane front growth. Tendency for faceting and low capacity for solute trapping limited the θ-phase dendrite growth to solidification interface velocity v < 0.07 m/s. Consequently, formation of pro-eutectic micro-constituent was suppressed, and RS microstructure formation was dominated by eutectic, α-cell, and banded morphology grains for the Al-20at.%Cu alloy. Eutectic growth operated for interface velocity of 0.1 m/s ≤ v < 0.3 m/s, with a transition from regular lamellar, 2-λ and 1-λ mode to a dense irregular morphology dominated by α-phase at v = 0.3 m/s. Interface temperature calculations indicated feasibility of α-cell growth mode for 0.3 m/s ≤ v < 0.7 m/s. Banded growth occurred for 0.7 m/s ≤ v < 1.3 m/s. Plane front α-phase growth was evident for interface velocities v ≥ 1.3 m/s. Previous work on rapid solidification microstructure development in hypereutectic Al-Cu alloys reported a regime of α-cell growth subsequently to eutectic and prior to transition to banded growth for Al-19at.%Cu (36 wt.%Cu), while for Al-22at.%Cu (40 wt.%Cu) eutectic growth transitioned directly to α-plane front growth without emergence of a banded regime. Finally, based on the current study the disappearance of the banded growth regime occurs for a composition larger than 20at.%Cu.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Creep and failure at metal-oxide interfaces

Small-scale bicrystal creep experiments were performed on contacts formed via in situ high-temperature diffusion bonding of metal-oxide interfaces including Ag-ZrO 2 , Pd-ZrO 2 , Pt-ZrO 2 , and Ag-high entropy oxide. This work characterizes deformation and failure at metal-oxide interfaces during mechanical loading. Interfacial sliding can be activated easily, while tensile interfacial creep was not observed at any condition of stress or temperature measured. Plastic strain, instead, localizes within the metal under tensile loading. A variety of mechanisms for plastic strain occur in the metal including lattice dislocation-mediated plasticity, twinning, low-angle grain boundary formation, and low-angle grain boundary creep. Surface and low-angle grain boundary diffusion occur under conditions where no metal-oxide tensile creep is observed, highlighting the significant differences in their interfacial mechanical response. High-temperature interfacial failure occurs when the mean curvature at the contact neck is approximately zero and the applied stresses comparable to brittle fracture stresses. The brittle fracture stresses were measured to be σ ƒ = 180 ± 90 MPa at the Ag-ZrO 2 interface at 225 °C, σ ƒ = 460 ± 160 MPa at the Pd-ZrO 2 interface at 680 °C, and σ ƒ = 640 ± 440 MPa at the Pt-ZrO 2 interface at 1010 °C.

Creep↗
DOE OSTI2018

A paraboloid fitting technique for calculating curvature from piecewise-linear interface reconstructions on 3D unstructured meshes

In this work, we present a novel method for calculating interface curvature on 3D unstructured meshes from piecewise-linear interface reconstructions typically generated in the volume of fluid method. Interface curvature is a necessary quantity to calculate in order to model surface tension driven flow. Curvature needs only to be computed in cells containing an interface. The approach requires a stencil containing only neighbors sharing a node with a target cell, and calculates curvature from a least-squares paraboloid fit to the interface reconstructions. This involves solving a 6 × 6 symmetric linear system in each mixed cell. We present verification tests where we calculate the curvature of a sphere, an ellipsoid, and a sinusoid in a 3D domain on regular Cartesian meshes, distorted hex meshes, and tetrahedral meshes. Lastly, for both regular and unstructured meshes, we find in all cases the paraboloid fitting method for curvature to converge between first and second order with grid refinement.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

Modeling material interfaces with hybrid adhesion method

A molecular dynamics simulation approach is presented to approximate layered material structures using discrete interatomic potentials through classical mechanics and the underlying principles of quantum mechanics. This method isolates the energetic contributions of the system into two pure material layers and an interfacial region used to simulate the adhesive properties of the diffused interface. The strength relationship of the adhesion contribution is calculated through small-scale separation calculations and applied to the molecular surfaces through an inter-layer bond criterion. By segregating the contributions into three regions and accounting for the interfacial excess energies through the adhesive surface bonds, it is possible to model each material with an independent potential while maintaining an acceptable level of accuracy in the calculation of mechanical properties. This method is intended for the atomistic study of the delamination mechanics, typically observed in thin-film applications. Therefore, the work presented in this paper focuses on mechanical tensile behaviors, with observations in the elastic modulus and the delamination failure mode. To introduce the hybrid adhesion method, we apply the approach to an ideal bulk copper sample, where an interface is created by disassociating the force potential in the middle of the structure. Various mechanical behaviors are compared to a standard EAM control model to demonstrate the adequacy of this approach in a simple setting. In addition, we demonstrate the robustness of this approach by applying it on (1) a Cu-Cu 2 O interface with interactions between two atom types, and (2) an Al-Cu interface with two dissimilar FCC lattices. These additional examples are verified against EAM and COMB control models to demonstrate the accurate simulation of failure through delamination, and the formation and propagation of dislocations under loads. Finally, the results conclude that by modeling the energy contributions of an interface using hybrid adhesion bonds, we can provide an accurate approximation method for studies of large-scale mechanical properties, as well as the representation of various delamination phenomena at the atomic scale.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Using soft x-ray absorption spectroscopy to characterize electrode/electrolyte interfaces in-situ and operando

The interfaces between electrode and electrolyte play a vital role in various electrochemical systems. However, the understanding of such embedded interfaces and interfacial processes is still limited partly because of the short of proper characterizations tools, especially in-situ/operando techniques. Previously, substantial effort has been devoted in the development of in-situ/operando techniques to investigate the solid/liquid interfaces. One successful approach is the combination of in-situ liquid cells and soft x-ray absorption spectroscopy (sXAS). Here, we showcased several recent examples using such liquid-cell-based in-situ/operando sXAS method to study different aspects of the electrode/electrolyte interface under reaction conditions, including the adsorption and deposition of solute species on electrode surface, morphological and chemical changes of electrode surface, and potential-dependent orientations of interfacial solvent molecules. These examples demonstrated capability of such in-situ/operando sXAS techniques in providing element- and chemical-sensitive interfacial information. This in-situ/operando sXAS technique also opens the way to the investigation of various solid/liquid interfaces in other important heterogeneous reactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Lattice-scale variations in viscosity are correlated with solution structure at mineral-water interfaces

At solid-liquid interfaces, the viscosity increases markedly from the bulk due to the collective interactions of ions and water molecules, influencing phenomena relevant to nanofluidics, colloidal dynamics, and electrochemistry. Here, in this study, we investigated dissipative forces at the boehmite-water interface using 3D atomic force microscopy. We observed an increase in interfacial solution viscosity, η, by 10-100-fold as the nanoprobe approached the surface in normal direction, with up to four oscillatory features showing average peaks of η/η bulk = 44-71. Moreover, the viscosity showed sub-nanometer variations within 0.5 nm from the interface, templated by the underlying crystal lattice and correlated with the interfacial solution structure. Beyond a near-wall region of approximately 1.2 nm, the dissipative response was comparable to that in bulk solution. Molecular dynamics simulations, along with statistical mechanical analyses, provided details on hydrodynamic structures near the interface. Specifically, the lattice-dependent dissipative responses are correlated with extensive hydrogen bonding by interfacial water molecules, which increased friction, particularly along the [001] direction. These results demonstrate how solution viscosity at mineral-water interfaces is anisotropic and correlated with the local solution structure, providing insights into the dynamics of nanocrystal attachment.

Viscosity↗
DOE OSTI2017

An interface capturing scheme for modeling atomization in compressible flows

The study of atomization in supersonic flow is critical to ensuring reliable ignition of scramjet combustors under startup conditions. Numerical methods incorporating surface tension effects have largely focused on the incompressible regime as most atomization applications occur at low Mach numbers. Simulating surface tension effects in compressible flow requires robust numerical methods that can handle discontinuities caused by both shocks and material interfaces with high density ratios. In this work, a shock and interface capturing scheme is developed that uses the Harten–Lax–van Leer–Contact (HLLC) Riemann solver while a Tangent of Hyperbola for INterface Capturing (THINC) interface reconstruction scheme retains the fluid immiscibility condition in the volume fraction and phasic densities in the context of the five equation model. The approach includes the effects of compressibility, surface tension, and molecular viscosity. One and two-dimensional benchmark problems demonstrate the desirable interface sharpening and conservation properties of the approach. Simulations of secondary atomization of a cylindrical water column after its interaction with a shockwave show good qualitative agreement with experimentally observed behavior. Three-dimensional examples of primary atomization of a liquid jet in a Mach 2 crossflow demonstrate the robustness of the method.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

A plasma–vacuum interface tracking algorithm for magnetohydrodynamic simulations of coaxial plasma accelerators

The resistive Magneto-hydrodynamic (MHD) model describes the behavior of a strongly ionized plasma in the presence of external electric and magnetic fields. For problems involving the plasma with an open boundary to very low pressure/vacuum regions, the continuum assumption is no longer valid in the entire domain of interest. For example, this is seen in a plasma accelerator where a dense plasma expands into a vacuum background. A common practice to deal with this issue is to assign small values of density and pressure to the vacuum regions and proceed to solve the continuum based MHD equations throughout the domain. We show that this approach fails to produce solutions consistent with the physics of the problem and can give rise to unacceptable artifacts such as spurious shocks. Here, we develop a plasma–vacuum interface tracking approach to mitigate this problem. The plasma–vacuum interface is tracked in a physically consistent manner and the MHD equations are solved only in the regions that contain the plasma. The interface tracking is achieved using a face-flux formulation derived from the theoretical solution to a 1D free expansion problem. Coupled with a threshold based approach, the interface tracking is implemented for both explicit and implicit time stepping frameworks on generalized unstructured grids. Simulations of magnetized thermal plasma jets expanding into a vacuum background indicate plume profiles devoid of the unphysical shock obtained using the small background density approach. In the context of resistive MHD simulations, the interface tracking approach overcomes the numerical stiffness induced by specifying a large background resistivity in the vacuum regions, resulting in significant wall-clock time gains.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

An arbitrarily high-order three-dimensional Cartesian-grid method for reconstructing interfaces from volume fraction fields

Here Tthis work describes a newly developed, arbitrarily high-order Cartesian-grid method for reconstructing material interfaces from a volume fraction field. The method begins by identifying all of the grid cells in the volume fraction field that are intersected by the interface and need to be approximated by the reconstruction scheme. Finite-differences are used to calculate the gradient of the volume fraction field and provide an estimate of the surface normal in all of the interfacial grid cells. Groups of connected grid cells are then identified which all have the same dominant component of the normal vector. This grouping by orientation determines the proper dependent variable to use in the surface reconstruction (e.g. for a 2D curve, this step determines if the surface will be approximated by a function of x or y). A cumulative integral over the surface is constructed and fit using b-splines for two-dimensional problems or tensor-product b-splines for three-dimensional problems. This construction allows for the interface to be recovered through application of the second fundamental theorem of calculus. Fitting the cumulative integral with $\mathscr{N}$ th-order b-splines (or tensor-product b-splines) yields an ($\mathscr{N}$-1) th-order convergence rate of the interface shape. Differentiation of the b-spline interface function(s) allows for the high-order approximation of the normal vector and curvature to be obtained directly anywhere along b-spline. Together, the proposed reconstruction technique can achieve arbitrarily high mesh convergence rates. Validation tests are presented with mesh convergence rates ranging from fourth- to tenth-order.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Sharp front tracking with geometric interface reconstruction

Here, this paper presents a novel sharp front-tracking method designed to address limitations in classical front-tracking approaches, specifically their reliance on smooth interpolation kernels and extended stencils for coupling the front and fluid mesh. In contrast, the proposed method employs exclusively sharp, localized interpolation and spreading kernels, restricting the coupling to the interfacial fluid cells–those containing the interface/front. This localized coupling is achieved by integrating a divergence-preserving velocity interpolation method with a piecewise parabolic interface calculation (PPIC) and a polyhedron intersection algorithm to compute the indicator function and local interface curvature. Surface tension is computed using the Continuum Surface Force (CSF) method, maintaining consistency with the sharp representation. Additionally, we propose an efficient local roughness smoothing implementation to account for surface mesh undulations, which is easily applicable to any triangulated surface mesh. Building on our previous work, the primary innovation of this study lies in the localization of the coupling for both the indicator function and surface tension calculations. By reducing the interface thickness on the fluid mesh to a single cell, as opposed to the 4–5 cell spans typical in classical methods, the proposed sharp front-tracking method achieves a highly localized and accurate representation of the interface. This sharper representation mitigates parasitic currents and improves force balancing, making it particularly suitable for scenarios where the interface plays a critical role, such as microfluidics, fluid-fluid interactions, and fluid-structure interactions. The proposed method is comprehensively validated and tested on canonical interfacial flow problems, including stationary and translating Laplace equilibria, oscillating droplets, and rising bubbles. The presented results demonstrate that the sharp front-tracking method significantly outperforms the classical approach in terms of accuracy, stability, and computational efficiency. Notably, parasitic currents are reduced by approximately two orders of magnitude and stable results are obtained for parameter ranges where classical front tracking fails to converge.

42 ENGINEERING↗
DOE OSTI2026

A fourth order sharp immersed method for the incompressible Navier-Stokes equations with stationary and moving boundaries and interfaces

We propose a fourth order Navier-Stokes solver based on the immersed interface method (IIM), for flow problems with stationary and one-way coupled moving boundaries and interfaces. Our algorithm employs a Runge-Kutta-based projection method that maintains high-order temporal accuracy in both velocity and pressure for steady and unsteady velocity boundary conditions. Fourth order spatial accuracy is achieved through a novel fifth order IIM discretization scheme for the advection term, as well as existing high-order interface-corrected finite difference schemes for the other differential operators. Using a set of manufactured flow problems with stationary and moving boundaries, we demonstrate fourth order convergence of velocity and pressure in the infinity norm, both inside the domain and on the immersed boundaries. The solver’s performance is further validated through a range of practical flow simulations, highlighting its efficiency over a second order scheme. Finally, we showcase the ability of our immersed discretization scheme to handle interface-coupled multiphysics problems by solving a conjugate heat transfer problem with multiple immersed solids. Overall, the proposed approach robustly combines the efficiency of high order discretization schemes with the flexibility of immersed discretizations for flow problems with complex, moving boundaries and interfaces.

42 ENGINEERING↗
DOE OSTI2016

The impact of interface bonding efficiency on high-burnup spent nuclear fuel dynamic performance

Finite element analysis (FEA) was used to investigate the impact of interfacial bonding efficiency at pellet-pellet and pellet-clad interfaces of high-burnup (HBU) spent nuclear fuel (SNF) on system dynamic performance. Bending moments M were applied to FEA model to evaluate the system responses. From bending curvature, κ, flexural rigidity EI can be estimated as EI = M/κ. The FEA simulation results were benchmarked with experimental results from cyclic integrated reversal bending fatigue test (CIRFT) of HBR fuel rods. The consequence of interface debonding between fuel pellets and cladding is a redistribution of the loads carried by the fuel pellets to the clad, which results in a reduction in composite rod system flexural rigidity. Furthermore, the interface bonding efficiency at the pellet-pellet and pellet-clad interfaces can significantly dictate the SNF system dynamic performance. With the consideration of interface bonding efficiency, the HBU SNF fuel property was estimated with CIRFT test data.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Thermal stability of 3D interface Cu/Nb nanolaminates

Nanocrystalline alloys are promising structural materials yet lack thermal stability in many cases. Recent work shows that interface structure has an outsize effect on the thermal behavior of nanostructured alloys. Here, this work focuses on the role of controlled heterophase interface structure in the thermal evolution of model Cu/Nb nanolaminates. We introduce 3D interfaces containing nanoscale heterogeneities in all spatial dimensions between Cu and Nb, forming 3D Cu/Nb. TEM, nanoindentation, and DSC are used in tandem to establish thermal stability and to identify shifts in microstructure as a function of static annealing temperature. 3D interfaces are shown to survive annealing to 300 °C for 1 hr., while 3D Cu/Nb microstructure evolves to form low-density and voided regions correlating to the onset of layer pinch-off between 500 and 600 °C annealing temperatures. A diffusivity- and vacancy energetics-based mechanism is developed to explain void formation driven by 3D interface degradation at elevated temperature.

3D interfaces↗
DOE OSTI2022

Effects of Absorber Near-Interface Compensation on Cd(Se,Te) Solar Cell Performance

Arsenic (As) has been shown to be an effective p-type dopant for CdTe, although high performance in As-doped devices remains difficult to achieve. Arsenic is prone to self-compensation in CdTe, as evidenced by the accumulation of dopant atoms in CdTe/Cd(Se,Te) near the interface with MgxZn1-xO (MZO). In this study, we use SCAPS 1D modeling software to investigate the effect of near-interface compensation, helping elucidate loss pathways in present-day As-doped devices and informing future growth directions. We consider three possible results of As accumulation: shallow donors, deep recombination centers, and a thin layer of excess acceptor accumulation. The reduction in near-interface carrier concentration caused by shallow donors is shown to improve open-circuit voltages (VOC), whereas deep levels are detrimental to all performance parameters. The thin charge layer affects capacitance-voltage (CV) measurements by reducing the depletion width while maintaining the same carrier concentration, replicating CV behavior that has been observed in actual devices. These results illustrate the importance of monitoring dopant accumulation within 100 nm of the interface, and suggest that reducing or eliminating the As concentration in this region would be beneficial. An undoped Cd(Se,Te) layer at the interface is suggested as a possible device structure to boost performance.

absorber↗