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DOE OSTI2023

Understanding non-stochiometric deposition of multi-principal elemental NiCoCr thin films

Multi-principal elemental NiCoCr thin films with compositional flexibility have potential applications as a thermal barrier, corrosion-resistant coatings, and functional energy materials. In this study, the non-stochiometric multi-principal element alloy thin film formation behavior from an equiatomic ablation target of NiCoCr using pulsed laser deposition has been reported. Here, the effect of varying laser fluence on compositions of constituent elements in the NiCoCr thin films is systematically investigated. The increase in laser fluence typically increases the likelihood of acquiring undesirable particulates in thin films. Therefore, to maintain the film quality the laser fluences are adjusted within the range of 1.3–3.3 J·cm -2 , while the film thicknesses are kept constant at ~30 nm. Results show that the constituent elements are well-distributed in the formed NiCoCr thin films, however, having average atomic percentages of Ni and Cr twice as high as Co irrespective of the equiatomic composition of individual elements in the ablation target. This stochiometric alteration in the as-deposited thin films is governed by the rate of ablation and subsequent evaporation of each element, which is facilitated by the optical properties and vapor pressure of individual constituent elements. Additionally, electron energy-loss spectroscopy and x-ray absorption spectroscopy analysis reveal that the thin films have partially oxidized, with the Cr oxidation contributing the most to the O-K edge in comparison to Ni and Co. Finally, this study presents a laser-assisted pathway for fabricating compositionally flexible NiCoCr thin films and develops an understanding of the non-equilibrium laser-material interactions and how the intrinsic properties of constituent elements affect the stoichiometric flow of materials from the target to the final film deposition.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Characterization of niobium-doped titania epitaxial films deposited by metalorganic chemical vapor deposition

Highlights: • The undoped and Nb-doped TiO{sub 2} films were deposited on SrTiO{sub 3} (100) substrates. • The epitaxial growth relationship between TiO{sub 2} film and the substrate was confirmed. • The microstructures of the films were explored. • The electrical and optical properties of the films were revealed. - Abstract: Titania (TiO{sub 2}) films with different niobium (Nb) doping concentrations were deposited on SrTiO{sub 3} (STO) (100) substrates by metalorganic chemical vapor deposition (MOCVD). The crystal structures, surface morphologies, electrical and optical properties of the Nb-doped TiO{sub 2} (TiO{sub 2}:Nb) films varying with Nb content were investigated. The single crystal TiO{sub 2} films with anatase structure were obtained at low Nb doping levels. The highest Hall mobility of the prepared films reached as high as 16.50 cm{sup 2} V{sup −1} s{sup −1}. The lowest resistivity of 5.75 × 10{sup −2} Ω cm with a Hall mobility of 7.40 cm{sup 2} V{sup −1} s{sup −1} and a carrier concentration of 1.47 × 10{sup 19} cm{sup −3} were obtained from the 1.20% Nb-doped TiO{sub 2} film. This resistivity was about 6 orders of magnitude lower than the undoped TiO{sub 2} film. Moreover, all the deposited films exhibited high average transmittances of over 88% in the visible wavelength range.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Functional chitosan-based grapefruit seed extract composite films for applications in food packaging technology

Highlights: • Chitosan-based grapefruit seed extract (GFSE) films were solution casted. • GFSE was uniformly dispersed within all chitosan film matrices. • All chitosan-based composite films showed remarkable transparency. • Increasing amounts of GFSE incorporated increased the elongation at break of films. • Chitosan-based GFSE composite films inhibited the proliferation of fungal growth. - Abstract: Chitosan-based composite films with different amounts of grapefruit seed extract (GFSE) (0.5, 1.0 and 1.5% v/v) were fabricated via solution casting technique. Experimental results showed that GFSE was uniformly dispersed within all chitosan film matrices. The presence of GFSE made the films more amorphous and tensile strength decreased, while elongation at break values increased as GFSE content increased. Results from the measurement of light transmission revealed that increasing amounts of GFSE (from 0.5 to 1.5% v/v) did not affect transparency of the films. Furthermore, packaging of bread samples with chitosan-based GFSE composite films inhibited the proliferation of fungal growth as compared to control samples. Hence, chitosan-based GFSE composite films have the potential to be a useful material in the area of food technology.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the crystallites size increases, the grain boundaries reduce and this suppresses the recombination rate of electron–hole pairs on the nanostructured hematite thin films. As a result, the measured photocurrent densities of nanostructured hematite thin films also increased. The highest measured photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl in 1 M NaOH electrolyte was achieved for the nanostructured hematite thin film annealed at 600 °C. This study had confirmed that strong interdependencies exist between the average hematite nanocrystallites size and grain boundaries with annealing temperature on the eventual PEC water splitting performance of nanostructured hematite thin films. The annealed hematite thin films at a higher temperature will enhance the nanocrystals growth and thus, suppressing the electron–hole pairs recombination rate, lowering the grain boundary resistance and enabling higher photocurrent flow at the molecular level. As a result, the photocurrent density and thus, the overall PEC water splitting performance of the nanostructured hematite thin films are significantly enhanced.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Altering properties of cerium oxide thin films by Rh doping

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Investigation of microstructure, micro-mechanical and optical properties of HfTiO{sub 4} thin films prepared by magnetron co-sputtering

Highlights: • HfTiO{sub 4} thin films were deposited by magnetron co-sputtering. • As-prepared and annealed at 800 °C thin films were nanocrystalline. • Optical properties and hardness were investigated in relation to thin films structure. • Hardness was 3-times higher in the case of as-deposited thin films. • HfTiO{sub 4} thin films are suitable for use as optical coatings with protective properties. - Abstract: Titania (TiO{sub 2}) and hafnium oxide (HfO{sub 2}) thin films are in the focus of interest to the microelectronics community from a dozen years. Because of their outstanding properties like, among the others, high stability, high refractive index, high electric permittivity, they found applications in many optical and electronics domains. In this work discussion on the hardness, microstructure and optical properties of as-deposited and annealed HfTiO{sub 4} thin films has been presented. Deposited films were prepared using magnetron co-sputtering method. Performed investigations revealed that as-deposited coatings were nanocrystalline with HfTiO{sub 4} structure. Deposited films were built from crystallites of ca. 4–12 nm in size and after additional annealing an increase in crystallites size up to 16 nm was observed. Micro-mechanical properties, i.e., hardness and elastic modulus were determined using conventional load-controlled nanoindentation testing. the annealed films had 3-times lower hardness as-compared to as-deposited ones (∼9 GPa). Based on optical investigations real and imaginary components of refractive index were calculated, both for as-deposited and annealed thin films. The real refractive index component increased after annealing from 2.03 to 2.16, while extinction coefficient increased by an order from 10{sup −4} to 10{sup −3}. Structure modification was analyzed together with optical energy band-gap, Urbach energy and using Wemple–DiDomenico model.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Fabrication of antibacterial blend film from poly (vinyl alcohol) and quaternized chitosan for packaging

Highlights: • HTCC/PVA blend films were prepared through a simple mixing method. • The blend films had greater elongation at break and good optical transmittance. • The blend films had low oxygen permeability and water vapor permeability. • The films had good activity against Escherichia coli and Staphylococcus aureus. - Abstract: Blend films from poly (vinyl alcohol) (PVA) containing N-(2-hydroxy) propyl-3-trimethyl ammonium chloride chitosan (HTCC) were prepared via a simple mixing and casting method. The films were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction measurements (XRD), scanning electron microscopy and ultraviolet-visible measurements (UV–vis). The effects of HTCC amount on mechanical properties, oxygen permeability, water vapor permeation, and antibacterial properties against Gram-negative (Escherichia coli) and Gram-positive (Staphylococcus aureus) of the films were investigated. FTIR and XRD analysis show that HTCC and PVA in the blend films interacted by hydrogen bonding. SEM and UV–vis analysis reveal the good compatibility between HTCC and PVA. Compared with pure PVA film, the blend films had greater elongation at break, lower water permeability, and higher antibacterial activity. The HTCC addition decreased the tensile strength and the light transmittance. The results suggest that HTCC/PVA blend films have a potential as packaging materials.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Preparation and adsorption properties of nano magnetite chitosan films for heavy metal ions from aqueous solution

Highlights: • Nano magnetite–chitosan films were prepared by casting method. • The efficiency of the prepared films for removing heavy metals was investigated. • The adsorption mechanism was studied using different isotherm and kinetic models. • Films reuse and metals recovery were studied. - Abstract: Nano magnetite chitosan (NMag–CS) film was prepared and characterized with different analytical methods. X-ray diffraction (XRD) patterns confirmed the formation of a pure magnetite structure and NMag–CS nanocomposite. TEM image of the film, revealed the uniform dispersion of magnetite nanoparticles inside chitosan matrix. The adsorption properties of the prepared film for copper, lead, cadmium, chromium and nickel metal ions were evaluated. Different factors affecting the uptake behavior by the composite films such as time, initial pH and film dose were investigated. The adsorption equilibrium attained using 2 g/L of the film after 120 min of reaction. The equilibrium data were analyzed using Langmuir and Freundlich models. The adsorption kinetics followed the mechanism of the pseudo-second-order equation for all metals. The metals regenerated from films with an efficiency greater than 95% using 0.1 M ethylene diamine tetra acetic acid (EDTA) and films were successfully reused for adsorption.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Annealing induced microstructure engineering of antimony tri-selenide thin films

Highlights: • Deposition of Sb{sub 2}Se{sub 3} thin films using thermal vapour deposition. • Films are deposited on substrates with concurrent heating and without heating. • Effect of post deposition annealing on the two types of films are investigated. • Influence of temperature and processing conditions on optical band gap are probed. • This Sb{sub 2}Se{sub 3} films can find application in solar cells and optoelectronic devices. - Abstract: The presented work demonstrates the effect of annealing on the structural, surface morphology and optical properties of Antimony Triselenide (Sb{sub 2}Se{sub 3}) thin films deposited by thermal evaporation. Two sets of thin films of Sb{sub 2}Se{sub 3} were grown on soda lime glass (SLG) substrates by thermal evaporation with and without substrate heating. Both sets of films were then annealed at three distinct temperatures (100 °C, 200 °C and 300 °C) to study the effects of annealing on the microstructure. Analysis using XRD (X-Ray Diffraction) characterization revealed that the as-deposited films without substrate heating exhibit an amorphous nature, whereas the films grown with concurrent substrate heating are polycrystalline with orthorhombic structure. The films annealed at high temperature with concurrent substrate heating possess smooth and continuous grain morphologies. The effect of annealing was also found to have significant impact on the band gap and optical properties of the Sb{sub 2}Se{sub 3} thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Growth and characterization of Cu3SbSe4 thin films through thermally diffusing Sb2Se3 – CuSe by chemical bath deposition (CBD)

Highlights: • Cu{sub 3}SbSe{sub 4} films were formed by chemical bath deposition followed by a heat treatment. • Prepared Cu{sub 3}SbSe{sub 4} thin films have promising properties to absorbing layer in a solar cell or thermoelectric material. • Electrical conductivity values of Cu{sub 3}SbSe{sub 4} are high, considering its manufacturing method and the previous reports in the field. - Abstract: In the present work, Cu{sub 3}SbSe{sub 4} thin films have been successfully synthesized by chemical bath deposition (CBD) involving a sequential deposition of antimony selenide (Sb{sub 2}Se{sub 3}) and copper selenide (CuSe) films and then annealing in a vacuum atmosphere. The influence of CuSe deposition time on the previously deposited Sb{sub 2}Se{sub 3} films was investigated to obtain the ternary phase. A study of the structural, morphological, optical and electrical properties of these films was carried out using appropriate characterization techniques. X-ray diffraction analysis revealed that the films show a tetragonal crystalline crystalline structure corresponding to the Permingeatite phase (Cu{sub 3}SbSe{sub 4}). The crystal size increases with the CuSe deposition time. It is identified by Raman spectroscopy that at low CuSe deposition times a low concentration of Sb{sub 2}Se{sub 3} coexists in the thin film. The optical band gap energy of these films was evaluated in the range of 0.67–1.18 eV, decreasing by increasing CuSe deposition time. By field-emission scanning electron microscopy (FESEM) a morphological study was carried out, observing that by increasing the deposition time of CuSe there is an increase of agglomerates and decrease the porosity in the samples. An elemental analysis was carried out by energy dispersive X-ray spectroscopy to observe the composition and elemental distribution in the ternary compound. The films showed a p-type electrical conductivity with values between 0.417 and 55.55 (Ω cm{sup −1}). The mobility and carrier density were performed by Hall Effect and Thermoelectric measurements observing a slight increase in the values by increasing the time of CuSe deposition. All results obtained for thin films of Cu{sub 3}SbSe{sub 4} suggest that it could be used as an absorber material in a solar cell or thermoelectric material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Epitaxial Thin Films of a Chalcogenide Perovskite

Chalcogenide perovskites have emerged as a new class of optoelectronic materials, especially for photovoltaic applications, but fundamental properties and applications of chalcogenide perovskites remain limited due to the lack of high-quality thin films. In this paper, we report direct epitaxial thin film growth of BaZrS 3 , a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out-of-plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface, the films are polycrystalline with many extended defects, suggesting the potential for further improvement in growth. X-ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region, validating BaZrS 3 as a suitable candidate for ultrathin front absorbers in tandem solar cells. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS 3 films thus far. Our study opens up opportunities to use high quality thin films of chalcogenide perovskites to probe fundamental physical phenomena in thin films and heterostructures and also in photovoltaic and optoelectronic applications.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Tunable Semiconducting Behavior and Linear-Nonlinear Optical Properties of Ag–Sn Dual-Doped Nanocrystalline CdO Thin Films for Optoelectronics

Semiconductor-based thin films have a great impact on determining the anticipated optoelectronic device construction and the advancement of cutting-edge applications. Herein, Ag and Sn dual-doped nanocrystalline transparent conducting CdO thin films were prepared on glass substrates using a cost-effective spray coating method, and their structural, morphological, optical, and semiconducting behaviors were investigated. The successful incorporation of Ag and Sn resulted in the polycrystalline nature of the deposited films without the additional peaks, as verified by X-ray diffraction (XRD) analysis. The XRD report also revealed the enhanced crystallinity (65%) at the higher doping level (3 wt % Ag and Sn-doped CdO film). All the deposited CdO films exhibited homogeneous, spherical, or round-shaped grains, with agglomeration revealed by scanning electron microscopy analysis. UV–visible spectroscopy was utilized to determine the linear and nonlinear optical properties of the deposited CdO thin films, and a reduction in the band gap from 3.891 to 3.772 eV was observed. A significant enhancement in the first- and third-order nonlinear susceptibility and nonlinear refractive index of the doped CdO films was also observed with increasing doping concentration. Hall effect data were collected at room temperature to investigate the electrical properties of all of the CdO films. The charge carrier concentration of CdO thin films was increased from 142.08 × 10 18 to 169.10 × 10 18 cm –3 , and the highest conductivity was found to be 192 s/cm on doping 3 wt % Ag–Sn. All the CdO thin films exhibited n-type conductivity, while an incredible n-type to p-type charge carrier transition was noticed at a higher doping level (3 wt % Ag–Sn). The findings of the current work are expected to advance the synthesis of semiconductor thin films through cost-effective spray coating methods for optoelectronic device applications.

deposition↗

DOE OSTI2013

Controlled deposition of sulphur-containing semiconductor and dielectric nano-structured films on metals in SF{sub 6} ion-ion plasma

In the present paper, the deposition processes and formation of films in SF{sub 6} ion-ion plasma, with positive and negative ion flows accelerated to the surface, are investigated. The PEGASES (acronym for Plasma Propulsion with Electronegative GASES) source is used as an ion-ion plasma source capable of generating almost ideal ion-ion plasma with negative ion to electron density ratio more than 2500. It is shown that film deposition in SF{sub 6} ion-ion plasma is very sensitive to the polarity of the incoming ions. The effect is observed for Cu, W, and Pt materials. The films formed on Cu electrodes during negative and positive ion assisted deposition were analyzed. Scanning electron microscope analysis has shown that both positive and negative ion fluxes influence the copper surface and leads to film formation, but with different structures of the surface: the low-energy positive ion bombardment causes the formation of a nano-pored film transparent for ions, while the negative ion bombardment leads to a continuous smooth insulating film. The transversal size of the pores in the porous film varies in the range 50–500 nm, and further analysis of the film has shown that the film forms a diode together with the substrate preventing positive charge drain, and positive ions are neutralized by passing through the nano-pores. The film obtained with the negative ion bombardment has an insulating surface, but probably with a multi-layer structure: destroying the top surface layer allows to measure similar “diode” IV-characteristics as for the nano-pored film case. Basing on results, practical conclusions for the probes and electrodes cleaning in ion-ion SF{sub 6} plasmas have been made. Different applications are proposed for the discovered features of the controlled deposition from ion-ion plasmas, from Li-sulphur rechargeable batteries manufacturing and nanofluidics issues to the applications for microelectronics, including low-k materials formation.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films

Gallium oxide (Ga{sub 2}O{sub 3}) thin films were made by sputter deposition employing a Ga{sub 2}O{sub 3} ceramic target for sputtering. The depositions were made over a wide range of substrate temperatures (T{sub s}), from 25 to 600 °C. The effect of T{sub s} on the chemical bonding, surface morphological characteristics, optical constants, and electrical properties of the grown films was evaluated using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and four-point probe measurements. XPS analyses indicate the binding energies (BE) of the Ga 2p doublet, i.e., the Ga 2p{sub 3/2} and Ga 2p{sub 1/2} peaks, are located at 1118.0 and 1145.0 eV, respectively, characterizing gallium in its highest chemical oxidation state (Ga{sup 3+}) in the grown films. The core level XPS spectra of O 1s indicate that the peak is centered at a BE ∼ 531 eV, which is also characteristic of Ga-O bonds in the Ga{sub 2}O{sub 3} phase. The granular morphology of the nanocrystalline Ga{sub 2}O{sub 3} films was evident from AFM measurements, which also indicate that the surface roughness of the films increases from 0.5 nm to 3.0 nm with increasing T{sub s}. The SE analyses indicate that the index of refraction (n) of Ga{sub 2}O{sub 3} films increases with increasing T{sub s} due to improved structural quality and packing density of the films. The n(λ) of all the Ga{sub 2}O{sub 3} films follows the Cauchy's dispersion relation. The room temperature electrical resistivity was high (∼200 Ω-cm) for amorphous Ga{sub 2}O{sub 3} films grown at T{sub s} = RT-300 °C and decreased to ∼1 Ω-cm for nanocrystalline Ga{sub 2}O{sub 3} films grown at T{sub s} ≥ 500–600 °C. A correlation between growth conditions, microstructure, optical constants, and electrical properties of Ga{sub 2}O{sub 3} films is derived.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Growth mechanism and composition of ultrasmooth a-C:H:Si films grown from energetic ions for superlubricity

Growth mechanism and ion energy dependence of composition of ultrasmooth a-C:H:Si films grown from ionization of tetramethylsilane (TMS) and toluene mixture at a fixed gas ratio have been investigated by varying the applied bias voltage. The dynamic scaling theory is employed to evaluate the roughness evolution of a-C:H:Si films, and to extract roughness and growth exponents of α ∼ 0.51 and β ∼ 0, respectively. The atomically smooth surface of a-C:H:Si films with Ra ∼ 0.1 nm is thermally activated by the energetic ion-impact induced subsurface “polishing” process for ion dominated deposition. The ion energy (bias voltage) plays a paramount role in determining the hydrogen incorporation, bonding structure and final stoichiometry of a-C:H:Si films. The hydrogen content in the films measured by ERDA gradually decreases from 36.7 to 17.3 at. % with increasing the bias voltage from 0.25 to 3.5 kV, while the carbon content in the films increases correspondingly from 52.5 to 70.1 at. %. The Si content is kept almost constant at ∼9–10 at. %. Depending on the ion-surface interactions, the bonding structure of a-C:H:Si films grown in different ion energy regions evolves from chain-developed polymer-like to cross-linked diamond-like to sp{sup 2}-bonded a–C as revealed by XPS, Raman, and FTIR analysis. Such a structural evolution is reflected in their measured nanomechanical properties such as hardness, modulus, and compressive stress. An enhanced viscoplastic behavior (i.e., viscoplastic exponent of ∼0.06) is observed for polymeric a-C:H:Si films. A hydrogen content threshold (H > 20 at. %) exists for the as-grown a-C:H:Si films to exhibit superlow friction in dry N{sub 2} atmosphere. An extremely low friction coefficient of ∼0.001 can be obtained for polymer-like a-C:H:Si film. These near-frictionless a-C:H:Si films are strongly promising for applications in industrial lubricating systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Effect of deposition times on structure of Ga-doped ZnO thin films as humidity sensor

Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to get samples of different thickness. X-ray diffraction (XRD) was used to determine the structure of GZO thin films. Structure for GZO thin film is hexagonal wurtzite structure. Morphology and thickness of GZO thin films was observed from FESEM micrographs. Grain size and thickness of thin films improved with increasing deposition times. However, increasing the thickness of thin films occur below 25 minutes only. Electrical properties of GZO thin films were studied using a four-point probe technique. The changes in the structure of the thin films lead to the changed of their electrical properties resulting in the reduction of the film resistance. These thin films properties significantly implying the potential application of the sample as a humidity sensor.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Modifying magnetic properties of ultra-thin magnetite films by growth on Fe pre-covered MgO(001)

Iron oxide films were reactively grown on iron buffer films, which were deposited before on MgO(001) substrates to analyze the influence of the initial iron buffer layers on the magnetic properties of the magnetite films. X-ray photoelectron spectroscopy and low energy electron diffraction showed that magnetite films of high crystalline quality in the surface near region were formed by this two-step deposition procedure. The underlying iron film, however, was completely oxidized as proved by x-ray reflectometry and diffraction. The structural bulk quality of the iron oxide film is poor compared to magnetite films directly grown on MgO(001). Although the iron film was completely oxidized, we found drastically modified magnetic properties for these films using the magnetooptic Kerr effect. The magnetite films had strongly increased coercive fields, and their magnetic in-plane anisotropy is in-plane rotated by 45∘ compared to magnetite films formed directly by one step reactive growth on MgO(001)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗