Design of a Submillimeter Crack-Detection Tool for Si Photovoltaic Wafers Using Vicinal Illumination and Dark-Field Scattering
Micro-cracks in silicon solar cells reduce the mechanical strength of the wafer, and cause breakage during manufacturing, transportation and field operation. Therefore, there is a need to trace where micro-cracks initiate in the manufacturing line. As wafers become thinner, the critical crack length required for fracture significantly decreases for the same loading conditions. Currently, very few industry-standard tools can reliably detect sub-mm cracks, which will become more critical for thinner wafers. In this work, we demonstrate a technique to detect sub-mm cracks located at the edges of various multicrystalline silicon wafers and solar cells. The proposed technique, which is based on near-infrared dark-field imaging with vicinal laser illumination from the wafer edge, has several advantages over state-of-the-art optical transmission imaging and dark-field scattering techniques. Moreover, we adapt this technique to achieve the high-throughput requirement of in-line metrology, hence it can be used to detect sub-mm cracks in a manufacturing line. With a high-framerate linescan camera, this proposed crack technique is designed to theoretically achieve a scanning throughput of less than 1 second per wafer.