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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Studying AC-LGAD strip sensors from laser and testbeam measurements

Here, this paper presents the setup assembled to characterize and measure the spatial and timing resolutions of AC-coupled Low Gain Avalanche Diodes (AC-LGADs), using a 1060 nm laser source to deposit initial charges with a defined calibration methodology. The results were compared to those obtained with a 120 GeV proton beam. Despite the differences in the charge deposition mechanism between the laser and proton beam, the spatial and temporal resolutions were found to be compatible between the two sources after calibration. With 4D tracking detectors expected to play a vital role in upcoming collider experiments, we foresee this work as a way to evaluate the performance of semiconductor sensors that can augment testbeam measurements and accelerate R&D efforts. Additionally, simulation studies using Silvaco TCAD and Weightfield2 were carried out to understand the various contributing factors to the total time resolution in AC-LGAD sensors, measured using the laser source.

FOS: Physical sciences↗
DOE OSTI2026

Response of AC-coupled low gain avalanche detectors to ionizing and non-ionizing radiation damage

Low gain avalanche diodes with DC- and AC-coupled readout were exposed to ionizing and non-ionizing radiation at levels relevant to future experiments in particle, nuclear, and medical physics and to astrophysics. Damage-related change in their acceptor removal constants and in the resistivity of the region between the guard ring and the active area are reported, as is change in the leakage current and depletion voltages of the active volumes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

A model for selecting the best sustainable airport technology alternatives

Air transport is a continually expanding industry, a fact that has become even more evident with the recovery of the aviation industry post-COVID-19. This expansion amplified energy consumption at airports, which was already significantly high. Airport decision-makers are increasingly focusing on improving sustainability and addressing social, economic, and environmental criteria across airports worldwide. In this article, we propose a decision-making model for identifying a sustainable airport technology solution that minimizes the energy consumption of airport lighting while considering economic, emission, and life-cycle criteria. The proposed model combines data envelopment analysis and multi-criteria decision making techniques. We applied the model to the Dallas/Fort Worth International Airport (DFW) as a case study, considering eight lighting technology solutions, each with five luminous flux alternatives. Our model identified the best lighting technology solution for DFW outdoor and indoor environments based on the following criteria: luminous flux, capital costs, life-cycle costs, energy consumption, and emissions (CO2e, NOx, SO2, and PM2.5). The designed model is customizable to any airport and is applicable to a wide range of airport lighting technologies. In our analysis, Light-Emitting Diode lighting emerged as the most sustainable technology option. It ranked first in most cases due to its balance of high efficacy, long lifespan, low life-cycle cost, low capital cost, and lower emissions across all pollutants.

Tchivwila, Moise B↗
DOE OSTI2020

Regulating off-centering distortion maximizes photoluminescence in halide perovskites

Abstract Metal halide perovskites possess unique atomic and electronic configurations that endow them with high defect tolerance and enable high-performance photovoltaics and optoelectronics. Perovskite light-emitting diodes have achieved an external quantum efficiency of over 20%. Despite tremendous progress, fundamental questions remain, such as how structural distortion affects the optical properties. Addressing their relationships is considerably challenging due to the scarcity of effective diagnostic tools during structural and property tuning as well as the limited tunability achievable by conventional methods. Here, using pressure and chemical methods to regulate the metal off-centering distortion, we demonstrate the giant tunability of photoluminescence (PL) in both the intensity (>20 times) and wavelength (>180 nm/GPa) in the highly distorted halide perovskites [CH3NH3GeI3, HC(NH2)2GeI3, and CsGeI3]. Using advanced in situ high-pressure probes and first-principles calculations, we quantitatively reveal a universal relationship whereby regulating the level of off-centering distortion towards 0.2 leads to the best PL performance in the halide perovskites. By applying this principle, intense PL can still be induced by substituting CH3NH3+ with Cs+ to control the distortion in (CH3NH3)1-xCsxGeI3, where the chemical substitution plays a similar role as external pressure. The compression of a fully substituted sample of CsGeI3 further tunes the distortion to the optimal value at 0.7 GPa, which maximizes the emission with a 10-fold enhancement. This work not only demonstrates a quantitative relationship between structural distortion and PL property of the halide perovskites but also illustrates the use of knowledge gained from high-pressure research to achieve the desired properties by ambient methods.

halide perovskites↗
DOE OSTI2024

Development of a Data Overflow Protection System for Super-Kamiokande to Maximize Data from Nearby Supernovae

Neutrinos from very nearby supernovae, such as Betelgeuse, are expected to generate more than ten million events over 10 s in Super-Kamokande (SK). At such large event rates, the buffers of the SK analog-to-digital conversion board (QBEE) will overflow, causing random loss of data that are critical for understanding the dynamics of the supernova explosion mechanism. In order to solve this problem, two new data-acquisition (DAQ) modules were developed to aid in the observation of very nearby supernovae. The first of these, the SN module, is designed to save only the number of hit photomultiplier tubes during a supernova burst and the second, the Veto module, prescales the high-rate neutrino events to prevent the QBEE from overflowing based on information from the SN module. In the event of a very nearby supernova, these modules allow SK to reconstruct the time evolution of the neutrino event rate from beginning to end using both QBEE and SN module data. This paper presents the development and testing of these modules together with an analysis of supernova-like data generated with a flashing laser diode. We demonstrate that the Veto module successfully prevents DAQ overflows for Betelgeuse-like supernovae as well as the long-term stability of the new modules. During normal running the Veto module is found to issue DAQ vetos a few times per month resulting in a total dead-time less than 1 ms, and does not influence ordinary operations. Additionally, using simulation data we find that supernovae closer than 800 pc will trigger the Veto module, resulting in a prescaling of the observed neutrino data.

F20 Instrumentation and technique↗
DOE OSTI2026

Photon calibration techniques for high resolution cryogenic detectors

Monoenergetic photons from a pulsed laser diode or LED are commonly used to calibrate the detector response of high-resolution calorimetric detectors. However, when the detector’s resolution is larger than the energy of a single photon, a calibration is normally derived using Poisson statistics. In this paper, we clarify the assumptions implicit in this calibration method, before considering how a more realistic model of a detector’s performance will violate these assumptions, biasing the calibration. Lastly, we judge the individual impact of specific detector parameters on our calibration, and conclude with discussion of both the limits of our calculations and the implications for state-of-the art detectors.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Closing the Accuracy Gap in Tandem Photovoltaic Testing: An Accessible and Efficient Spectral Tuning Method Using LED-Based Simulators for Research Laboratories and Industry

Accurate performance calibration of multijunction (MJ) solar cells is critical for advancing this technology toward large-scale terrestrial application, yet existing testing methods developed by photovoltaics calibration laboratories remain prohibitively complex and resource intensive for most research laboratories. Current approaches rely on expensive multisource simulators and/or intricate spectral tuning algorithms, limiting accessibility and hindering standardized comparisons of emerging MJ technologies such as perovskite-based tandems. This paper introduces a streamlined spectral irradiance adjustment method for light-emitting diode (LED)-based solar simulators, which are increasingly adopted in the photovoltaics community due to their versatility and cost-effectiveness. The method we present bins LED channels into groups based on the number of junctions of the MJ photovoltaic device under test (DUT) and their corresponding band gaps and incorporates an automated tuning algorithm that eliminates the need to adjust each channel’s irradiance individually. This tuning algorithm requires the relative spectral responsivities of both the DUT and a broadband reference cell, as well as a calibrated spectroradiometer. Measurement validation across various MJ devices, including III-V and perovskite/silicon tandems, demonstrates excellent agreement within 1% with well-established xenon-tungsten multisource simulators and associated tuning algorithms. By enabling precise spectral tuning with readily available equipment and a simple tuning algorithm, our approach bridges the measurement accuracy gap between research laboratories and accredited testing facilities, fostering more reliable device comparisons and accelerating the translation of MJ technologies into real-world energy systems.

14 SOLAR ENERGY↗
DOE OSTI2023

Experimental generation of polarization entanglement from spontaneous parametric down-conversion pumped by spatiotemporally highly incoherent light

Here, we investigate the cross influence of the pump coherence on the entanglement produced from spontaneous parametric down-conversion (SPDC) in different degrees of freedom (DOFs). We experimentally demonstrate the generation of polarization entanglement from SPDC pumped by a spatiotemporally highly incoherent (STHI) light-emitting diode. Our quantum state tomography measurements using multimode collection fibers to avoid postselection yield a two-qubit state with the concurrence of 0.531 ± 0.006 and purity of 0.647 ± 0.005, in excellent agreement with our theoretically predicted concurrence of 0.552 and purity of 0.652. We find that using an STHI pump reduces the entanglement and purity of the output polarization two-qubit state due to a coupling between the spatiotemporal and polarization DOFs introduced by the birefringence and dispersion of the nonlinear crystal. The viability of SPDC with STHI pumps is important for two reasons: (i) STHI sources are ubiquitous and available at a wider range of wavelengths than lasers, and (ii) the generated STHI polarization-entangled two-photon states could potentially be useful in long-distance quantum communication schemes due to their robustness to scattering.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Correlation Between Corrugation-Induced Flexoelectric Polarization and Conductivity of Low-Dimensional Transition Metal Dichalcogenides

The tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary their electrophysical properties from nonpolar to ferroelectric, and from direct-band semiconducting to metallic. In addition to classical controlling factors, such as field effect, composition, and doping, new degrees of freedom emerge in TMDs due to the curvature-induced electron redistribution and the associated changes in electronic properties. Here we theoretically explore the elastic and electric fields, flexoelectric polarization and free charge density for a TMD nanoflake placed on a rough substrate with a sinusoidal corrugation profile. Finite element modelling results for different flake thickness and corrugation depth yield insights into the flexoelectric nature of the out-of-plane electric polarization and establish the unambiguous correlation between the polarization and static conductivity modulation. The modulation is caused by the coupling between the deformation potential and inhomogeneous elastic strains, which evolve in the TMD nanoflake due to the adhesion between the flake surface and corrugated substrate. We reveal a pronounced maximum in the thickness dependences of the electron and hole conductivity of MoS 2 and MoTe 2 nanoflakes placed on a corrugated substrate, which opens the way for the optimization of their geometry towards significant improvement in their polar and electronic properties, necessary for advanced applications in nanoelectronics and memory devices. Specifically, the obtained results can be useful for the development of nanoscale straintronic devices based on the bended MoS 2 , MoTe 2 , and MoSTe nanoflakes, such as diodes and bipolar transistors with a bending-controllable sharpness of p-n junctions.

42 ENGINEERING↗
DOE OSTI2021

Radiation-Induced Dark Counts for Silicon Single-Photon Detectors in Space

Single-photon detectors operating on satellites for use in a quantum communications network can incur large dark-count-rate increases from the natural radiation environment of space. Displacement damage to the material lattice of a detector from the ionizing radiation can result in a permanent dark-count increase in the detector. In this work, we analyze the radiation-induced dark-count rate of a silicon single-photon avalanche diode onboard a satellite at different orbiting altitudes, as well as, the additional radiation from a nuclear-disturbed environment caused by a high-altitude nuclear explosion. For detectors on low Earth orbit satellites, protons are the biggest source of radiation damage and are best mitigated by choosing an orbit that minimizes exposure when passing through the South Atlantic Anomaly and Polar Cusps. Detectors on medium Earth orbit and geostationary orbit satellites, if shielded by more than 10 mm of aluminum, provide the best platform in terms of the least amount of radiation damage to the detectors. In the event of a high-altitude nuclear explosion, the artificial radiation belts produced by the explosion will cause too much damage to silicon single-photon detectors on low Earth orbit satellites and render them unfit for quantum communications in less than a day. Higher orbit satellites will only suffer minor dark-count-rate increases from the artificial radiation belts.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage V for is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in quantum wells has proven to be an important factor reducing V for . However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-shaped defects (V-defects) have been proposed as another key factor in reducing V for to allow lateral injection into multiple quantum wells, thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and the V-defect density. For green LEDs, V for decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Then, we discuss how the V-defect density and size affects the results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Reducing Spontaneous Orientational Polarization via Semiconductor Dilution Improves OLED Efficiency and Lifetime

Spontaneous orientational polarization (SOP) in the electron-transport layer (ETL) of organic light-emitting diodes (OLEDs) is increasingly recognized as a key factor influencing their performance. Here, we show that SOP is dramatically reduced in the common electron-transport material 2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) by coevaporating it together with medium-density polyethylene. Eliminating SOP from the ETL of blue fluorescent OLEDs in this manner reduces their operating voltage by 0.5 V, increases their external quantum efficiency (EQE) by 30%, and leads to a threefold increase in device lifetime. We show that the EQE and lifetime improvements both originate from reduced exciton-polaron annihilation in the emissive layer, and that this leads to a functional relationship between the two quantities that can be used to quantify the rate of annihilation-induced degradation in the device. Furthermore, these results highlight a substantial opportunity to improve OLED performance by controlling SOP through semiconductor dilution and suggest that this capability can be used to systematically isolate and understand exciton-polaron degradation in the pursuit of stable blue OLEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates

Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) lightemitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to non-radiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and nonradiative recombination rates that explains the increase in light-emission efficiency of InGaN with increasing indium concentration, without invoking the suppression of carrier diffusion. Furthermore, our analysis challenges the notion that carrier localization gives rise to defect tolerance in InGaN.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Excitonic Shockley-Read-Hall recombination in organic semiconductors

Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombination rate in organic materials, although without a clear understanding of how its parameters relate to the underlying material properties or how it should be modified to account for the finite lifetime of exciton intermediates in, for example, the doped emissive layer of an organic light-emitting diode (OLED). Here, we formalize SRH recombination for organic semiconductors based on diffusive trapping and Langevin recombination. We show that including the exciton state suppresses the recombination rate in host-guest systems with type II energy level alignment whenever the interfacial gap between the host and guest molecular orbitals is comparable to the exciton energy. Furthermore, these results quantify the balance between bimolecular and trap-mediated recombination in doped OLED emissive layers, and indicate that devices with type II host-guest pairings can, in principle, beat the thermodynamic limit of their neat guest counterparts.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Pure edge-dislocation half-loops in low-temperature Ga⁢N for V-defect formation

Lateral injection of carriers through semipolar crystallographic planes into c-plane QWs is one of the new frontiers in III-N light-emitting diodes (LEDs), especially for long wavelengths. Strategic use of V-defects has proven to be the most promising method for lateral injection, and creating optimal V-defect structure and density is an important research area for reducing forward voltage and increasing wall plug efficiency. Here, in this article, we present a novel method for forming V-defects in nominally unstressed low-temperature Ga⁢N through the generation of pure edge-dislocation half-loops. We present a detailed material science analysis of the loops via scattering-contrast electron microscopy. The loops have pure-edge character with Burgers vector 1/3 ⁢⟨$11\bar{2}0$⟩, and form in a sessile orientation on {$11\bar{2}0$} a-planes. The two arms of the loops are inclined such that the extra half-planes face down toward the growth substrate. The dislocation loops can be used to intentionally form V-defects through conditions of kinetically limited growth: these conditions also favor nucleation of V-defects at ∼100% of other threading dislocations in the Ga⁢N templates. Patterned sapphire substrates (PSS) are one of the most important substrates for III-N LED growth because of their superior light extraction. However, due to its low threading dislocation density, PSS have not been used extensively for V-defect LEDs. This work provides a pathway for improved control of V-defect formation and density on LEDs grown on sapphire with the goal of enabling uniform lateral injection in these V-defect engineered LEDs with low forward voltage, including PSS for high light extraction.

LEDs↗
DOE OSTI2021

Reversible ratchet effects in a narrow superconducting ring

We study the ratchet effect in a narrow pinning-free superconductive ring based on time-dependent GinzburgLandau (TDGL) equations. Voltage responses to external dc and ac currents at various magnetic fields are studied. Due to asymmetric barriers for flux penetration and flux exit in the ring-shaped superconductor, the critical current above which the flux-flow state is reached, as well as the critical current for the transition to the normal state, are different for the two directions of applied current. Furthermore, these effects cooperatively cause ratchet signal reversal at high magnetic fields, which has not been reported to date in a pinning-free system. The ratchet signal found here is larger than those induced by asymmetric pinning potentials. Our results also demonstrate the feasibility of using mesoscopic superconductors to employ a superconducting diode effect in versatile superconducting devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Campbell penetration depth in low carrier density superconductor YPtBi

Magnetic penetration depth, λ m , was measured as a function of temperature and magnetic field in single crystals of low carrier density superconductor YPtBi by using a tunnel-diode oscillator technique. Measurements in zero DC magnetic field yield London penetration depth, λ L ( T ) , but in the applied field the signal includes the Campbell penetration depth, λ C ( T ) , which is the characteristic length of the attenuation of small excitation field, H AC , into the Abrikosov vortex lattice due to its elasticity. Whereas the magnetic field dependent λ C exhibit λ C ~ B p with p = 1 / 2 in most of the conventional and unconventional superconductors, we found that p ≈ 0.23 << 1 / 2 in YPtBi due to rapid suppression of the pinning strength. From the measured λ C ( T , H ) , the critical current density is j c ≈ 40 A / cm 2 at 75 mK. We find that this is orders of magnitude lower than that of conventional superconductors of comparable T c .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗