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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 901 records · Page 50
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Behavioral Features of MIS Memristors with a Si{sub 3}N{sub 4} Nanolayer Fabricated on a Conductive Si Substrate

The effect of the material of the metal plates (Au, Ta, W) and exposure to a high-power blue laser on the memristive characteristics of metal–insulator–semiconductor (MIS) capacitors with a Si{sub 3}N{sub 4} film 6 nm thick fabricated on the basis of n{sup +}-Si is studied. It is shown that bipolar switching by the current appears only in capacitors with Au. The causes of the absence of bipolar switching in capacitors with Ta and W are explained. The switching of capacitors with Ta by the current and light and the photomemory effect are detected. It is shown that, despite the high doping level of the semiconductor substrate, it decreases the MIS memristor response rate due to a high density of surface states localized at the Si{sub 3}N{sub 4}/n{sup +}-Si interface. However, illumination allows a significant increase in the response rate due to a decrease in the semiconductor resistivity. The surface state densities are determined. To improve the frequency characteristics of MIS memristors, it is necessary to achieve a low surface state density.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Dielectric Parameters of Elastically Strained Heteroepitaxial SrTiO{sub 3} Films

Three-layer epitaxial SrRuO{sub 3}/SrTiO{sub 3}/SrRuO{sub 3} heterostructures with the 900-nm-thick intermediate layer of strontium titanate have been grown on single-crystal (001)La{sub 0.29}Sr{sub 0.71}Al{sub 0.65}Ta{sub 0.35}O{sub 3} substrates by the laser evaporation method. Plane-parallel film capacitors have been formed on the basis of the grown heterostructures using photolithography and ion etching. Temperature dependences of the dissipation factor have been measured for these capacitors at different bias voltages applied to strontium ruthenate electrodes. Temperature dependences of the permittivity of the intermediate SrTiO{sub 3} layer in the formed capacitor structures are visualized with compensation of the internal electric field and without it. The reasons for the sharp increase in the dielectric loss in the formed film capacitors at temperatures below 50 K are analyzed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Evaluation of a recycling process for printed circuit board by physical separation and heat treatment

Highlights: • The parts mounted on printed circuit board (PCB) were liberated by underwater explosion and mechanical crushing. • The crushed PCB without surface-mounted parts was carbonized under inert atmosphere at 873 K to recover copper. • The multi-layered ceramic capacitors including nickel was carbonized at 873 K to recover nickel by the magnetic separation. • The tantalum powders were recovered from the molded resins by heat treatment at 723 and 823 K in air atmosphere and screening. • Energy and treatment cost of new process increased, however, the environmental burden decreased comparing conventional one. - Abstract: Printed circuit boards (PCBs) from discarded personal computer (PC) and hard disk drive were crushed by explosion in water or mechanical comminution in order to disintegrate the attached parts. More parts were stripped from PCB of PC, composed of epoxy resin; than from PCB of household appliance, composed of phenol resin. In an attempt to raise the copper grade of PCB by removing other components, a carbonization treatment was investigated. The crushed PCB without surface-mounted parts was carbonized under a nitrogen atmosphere at 873–1073 K. After screening, the char was classified by size into oversized pieces, undersized pieces and powder. The copper foil and glass fiber pieces were liberated and collected in undersized fraction. The copper foil was liberated easily from glass fiber by stamping treatment. As one of the mounted parts, the multi-layered ceramic capacitors (MLCCs), which contain nickel, were carbonized at 873 K. The magnetic separation is carried out at a lower magnetic field strength of 0.1 T and then at 0.8 T. In the +0.5 mm size fraction the nickel grade in magnetic product was increased from 0.16% to 6.7% and the nickel recovery is 74%. The other useful mounted parts are tantalum capacitors. The tantalum capacitors were collected from mounted parts. The tantalum-sintered bodies were separated from molded resins by heat treatment at 723–773 K in air atmosphere and screening of 0.5 mm. Silica was removed and 70% of tantalum grade was obtained after more than 823 K heating and separation. Next, the evaluation of Cu recycling in PCB is estimated. Energy consumption of new process increased and the treatment cost becomes 3 times higher comparing the conventional process, while the environmental burden of new process decreased comparing conventional process. The nickel recovery process in fine ground particles increased energy and energy cost comparing those of the conventional process. However, the environmental burden decreased than the conventional one. The process for recovering tantalum used more heat for the treatment and therefore the energy consumption increased by 50%, when comparing with conventional process. However, the market price for tantalum is very large; the profit for tantalum recovery is added. Also the environmental burden decreased by the recycling of tantalum recovery. Therefore, the tantalum recovery is very important step in the PCB recycling. If there is no tantalum, the consumed energy and treatment cost increase in the new process, though the environmental burden decreases.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2023

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Digging deeper: Buried layers and interfaces studied by modified total electron yield and soft x-ray absorption spectroscopy

We report on the soft x-ray absorption spectroscopy investigation of thin film capacitors using a modified total electron yield detection mode. This mode utilizes two ammeters instead of one as commonly employed in the classical total electron yield scheme to measure photocurrents of devices under soft x-ray irradiation. The advantage of this configuration over the surface sensitive classical total electron yield mode is that it can provide information from buried layers and interfaces up to a thickness equal to the penetration depth of soft x-rays. The method can be easily adapted to existing synchrotron end stations. We investigate dielectric capacitors with dissimilar electrodes to assess the feasibility of the modified total electron yield method. Furthermore, in operando soft x-ray absorption spectroscopy measurements are performed on ferroelectric capacitors under bias and using two ammeters. The experimental results are discussed in terms of the external and internal photoemission processes and their distribution in thin film capacitors under an external bias condition. The proposed detection method opens the way to perform electronic and chemical state analyses of the buried interfaces and layers in various devices like multiferroic tunnel junctions, memristive devices, etc., during operation under an applied bias.

Kröger, E.↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Noise Optimization for MKIDs with Different Design Geometries and Material Selections

The separation and optimization of noise components is critical to microwave-kinetic inductance detector (MKID) development. We analyze the effect of several changes to the lumped-element inductor and interdigitated capacitor geometry on the noise performance of a series of MKIDs intended for millimeter-wavelength experiments. We extract the contributions from two-level system noise in the dielectric layer, the generation-recombination noise intrinsic to the superconducting thin-film, and system white noise from each detector noise power spectrum and characterize how these noise components depend on detector geometry, material, and measurement conditions such as driving power and temperature. We observe a reduction in the amplitude of two-level system noise with both an elevated sample temperature and an increased gap between the fingers within the interdigitated capacitors for both aluminum and niobium detectors. We also verify the expected reduction of the generation-recombination noise and associated quasiparticle lifetime with reduced inductor volume. This study also iterates over different materials, including aluminum, niobium, and aluminum manganese, and compares the results with an underlying physical model.

generation-recombination noise↗
DOE OSTI2017

Steady-State and Small-Signal Analysis of A-Source Converter

This paper presents a detailed steady-state analysis and ac small-signal modeling of the power stage of pulse-width modulated A-source converter. The voltage and current waveforms along with their corresponding expressions describing the converter operation are presented in detail. The input-to-output and input-to-capacitor dc voltage transfer functions are determined. The minimum inductance required to ensure continuous conduction mode is derived. The expressions for the semiconductor devices stresses are also presented. The dc, averaged equivalent circuit is derived using the circuit averaging technique. A complete derivation of the small-signal model including the converter parasitic resistances are presented followed by the power stage transfer functions relevant to the capacitor voltage loop, such as: 1) duty cycle-to-capacitor voltage; and 2) input-to-capacitor voltage. In addition, the expressions for the network input impedance and output impedance are derived. Finally, experimental validations of the derived small-signal models are performed, both in frequency and time domain for a laboratory prototype of an A-source converter. The theoretical predictions were in good agreement with the experimental results over a wide range of frequencies.

42 ENGINEERING↗
DOE OSTI2017

Liquefied gas electrolytes for electrochemical energy storage devices

Electrochemical capacitors and lithium-ion batteries have seen little change in their electrolyte chemistry since their commercialization, which has limited improvements in device performance. Combining superior physical and chemical properties and a high dielectric-fluidity factor, the use of electrolytes based on solvent systems that exclusively use components that are typically gaseous under standard conditions show a wide potential window of stability and excellent performance over an extended temperature range. Electrochemical capacitors using difluoromethane show outstanding performance from –78° to +65°C, with an increased operation voltage. The use of fluoromethane shows a high coulombic efficiency of ~97% for cycling lithium metal anodes, together with good cyclability of a 4-volt lithium cobalt oxide cathode and operation as low as –60°C, with excellent capacity retention.

Science & Technology - Other Topics↗
DOE OSTI2025

Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F 2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation

In this work, we demonstrate a vertical 2T-nC FeRAM with a back-end-of-line (BEOL) read transistor (T R ) for 4F 2 string and propose a selector design to mitigate polarization disturb in passive capacitor crossbar arrays. Key contributions include: 1) successful integration and operation composed of a Si MOSFET write transistor (T W ), 3-layer cylindrical ferroelectric capacitors, and Si-doped In 2 O 3 BEOL T R , demonstrating the feasibility of 4F 2 2T−nC string; 2) introducing nonlinearity into the capacitor stack to suppress ferroelectric voltage drop under inhibition biases while maintaining sufficient write voltage, reducing disturbance; 3)modeling and experimental validation of inserting a metalsemiconductor (a-Si)-metal (MSM) selector into the capacitor in mitigating the disturb, particularly achieving 9x reduction of disturb after 10 6 cycles in the V W /2 scheme.

42 ENGINEERING↗
NASA NTRS1972

Minimizing the area required for time constants in integrated circuits

When a medium- or large-scale integrated circuit is designed, efforts are usually made to avoid the use of resistor-capacitor time constant generators. The capacitor needed for this circuit usually takes up more surface area on the chip than several resistors and transistors. When the use of this network is unavoidable, the designer usually makes an effort to see that the choice of resistor and capacitor combinations is such that a minimum amount of surface area is consumed. The optimum ratio of resistance to capacitance that will result in this minimum area is equal to the ratio of resistance to capacitance which may be obtained from a unit of surface area for the particular process being used. The minimum area required is a function of the square root of the reciprocal of the products of the resistance and capacitance per unit area. This minimum occurs when the area required by the resistor is equal to the area required by the capacitor.

Lyons, J. C.↗
NASA NTRS1975

The relationship between reliability and bonding techniques in hybrid microcircuits

Differential thermal expansion was shown to be responsible for many observed failures in ceramic chip capacitors mounted on alumina substrates. It is shown that the mounting techniques used in bonding the capacitors have a marked effect upon the thermally induced mechanical stress and thus the failure rate. A mathematical analysis was conducted of a composite model of the capacitor-substrate system to predict the magnitude of thermally induced stresses. It was experimentally observed that the stresses in more compliant bonding systems such as soft lead tin and indium solders are significantly lower than those in hard solder and epoxy systems. The marked dependence upon heating and cooling rate was proven to be a determining factor in the prediction of failure solder systems. It was found that the harder or higher melting solders are less susceptible to thermal cycling effects but that they are more likely to fail during initial processing operations. Strain gage techniques were used to determine thermally induced expansion stresses of the capacitors and the alumina substrates. The compliance of the different bonding mediums was determined. From the data obtained, several recommendations are made concerning the optimum bonding system for the achievement of maximum reliability.

Caruso, S. V.↗
NASA NTRS1982

High speed computerized data acquisition of photovoltaic V-I characteristics

The voltage current (V-I) characteristics of the photovoltaic array were studied under actual environmental conditions. A method of data acquisition was devised that uses a capacitor charge technique to obtain the V-I characteristic and a computerized data system to display, record and process the data. The capacitor charge technique uses an array shorting transistor and a capacitor bank to sweep the array operating voltage and current from short circuit to open circuit in a specified time (approximately 125 ms). The computerized data system is synchronized with this transition and repetitively samples the array voltage and current during the transition and records the ambient conditions. This data is then normalized by the computer to standard conditions (100 mW/sq cm, 28 C) and is available in tabular and graphic form for both the voltage current and voltage power characteristics. The capacitor charge technique is described.

Delombard, R.↗
NASA NTRS1986

Electrostatic charging of electrically active spacecraft

A model is presented which predicts the temporal behavior of the ionospheric charging of spacecraft which eject energetic positive ions. The dynamic interaction of the spacecraft with the space-plasma environment is modelled as an equivalent electrical circuit consisting of a variable capacitor in parallel with two current sources. The spacecraft/space-plasma sheath is modelled as a variable capacitor containing positive-ion space charge. The ejection of energetic positive ions from the spacecraft represents a current source which charges the capacitor. Return current collected from the space-plasma sheath to the spacecraft is modelled as a variable current source which discharges the capacitor. The model can predict the temporal behavior of sheath movement, spacecraft potential, and space-plasma return current for a wide range of altitude, duty cycle, and ejected positive-ion current. Experimentally measured charging results, obtained for the Satellite Positive Ion Beam System (SPIBS) rocket flight, are accurately predicted by the model. Anticipated vehicle charging levels are presented for neutral-particle-beam platforms operating with a net, unneutralized, positive-ion-current component present in the emitted neutral-particle beam.

Matossian, J. N.↗
NASA NTRS1993

Cascaded transformerless DC-DC voltage amplifier with optically isolated switching devices

A very high voltage amplifier is provided in which plural cascaded banks of capacitors are switched by optically isolated control switches so as to be charged in parallel from the preceding stage or capacitor bank and to discharge in series to the succeeding stage or capacitor bank in alternating control cycles. The optically isolated control switches are controlled by a logic controller whose power supply is virtually immune to interference from the very high voltage output of the amplifier by the optical isolation provided by the switches, so that a very high voltage amplification ratio may be attained using many capacitor banks in cascade.

Sridharan, Govind↗
NASA NTRS1993

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Attia, John Okyere↗
NASA NTRS1994

Capacitive acoustic wave detector and method of using same

A capacitor having two substantially parallel conductive faces is acoustically coupled to a conductive sample end such that the sample face is one end of the capacitor. A non-contacting dielectric may serve as a spacer between the two conductive plates. The formed capacitor is connected to an LC oscillator circuit such as a Hartley oscillator circuit producing an output frequency which is a function of the capacitor spacing. This capacitance oscillates as the sample end coating is oscillated by an acoustic wave generated in the sample by a transmitting transducer. The electrical output can serve as an absolute indicator of acoustic wave displacement.

Yost, William T.↗
NASA NTRS2002

Inrush Current Control Circuit

An inrush current control circuit having an input terminal connected to a DC power supply and an output terminal connected to a load capacitor limits the inrush current that charges up the load capacitor during power up of a system. When the DC power supply applies a DC voltage to the input terminal, the inrush current control circuit produces a voltage ramp at the load capacitor instead of an abrupt DC voltage. The voltage ramp results in a constant low level current to charge up the load capacitor, greatly reducing the current drain on the DC power supply.

Cole, Steven W.↗