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At least 91 records · Page 5

An improved switching converter model

The nonlinear modeling and analysis of dc-dc converters in the continuous mode and discontinuous mode was done by averaging and discrete sampling techniques. A model was developed by combining these two techniques. This model, the discrete average model, accurately predicts the envelope of the output voltage and is easy to implement in circuit and state variable forms. The proposed model is shown to be dependent on the type of duty cycle control. The proper selection of the power stage model, between average and discrete average, is largely a function of the error processor in the feedback loop. The accuracy of the measurement data taken by a conventional technique is affected by the conditions at which the data is collected.

Shortt, D. J.↗

Comprehensive Silicon-Solar-Cell Program

Comprehensive Silicon Solar Cell Computer Modeling (SICELL) program simulates silicon solar cell. Predicts device parameters as efficiency, voltage-vs.-current characteristic fill factor, and temperature coefficients of parameters. Technique used similar to numerical-integration methods, but commonality described by use of mesh-point field. Validation studies show accuracies of simulations range from 0.08 percent to 3.6 percent for 27 experimental data points over temperature range of 300K to 421K. Results obtained by use of 10 mesh points in n- and p-type regions and for two iterations. SICELL runs interactively on VAX computer under VMS and written in VAX/VMS FORTRAN 77.

Lamorte, Michael F.↗

Quasi-Static Analysis of LaRC THUNDER Actuators

An analytic approach is developed to predict the shape and displacement with voltage in the quasi-static limit of LaRC Thunder Actuators. The problem is treated with classical lamination theory and Von Karman non-linear analysis. In the case of classical lamination theory exact analytic solutions are found. It is shown that classical lamination theory is insufficient to describe the physical situation for large actuators but is sufficient for very small actuators. Numerical results are presented for the non-linear analysis and compared with experimental measurements. Snap-through behavior, bifurcation, and stability are presented and discussed.

Campbell, Joel F.↗

Quasi-Static Analysis of Round LaRC THUNDER Actuators

An analytic approach is developed to predict the shape and displacement with voltage in the quasi-static limit of round LaRC Thunder Actuators. The problem is treated with classical lamination theory and Von Karman non-linear analysis. In the case of classical lamination theory exact analytic solutions are found. It is shown that classical lamination theory is insufficient to describe the physical situation for large actuators but is sufficient for very small actuators. Numerical results are presented for the non-linear analysis and compared with experimental measurements. Snap-through behavior, bifurcation, and stability are presented and discussed.

Campbell, Joel F.↗

Temperature characteristics of silicon space solar cells and underlying parameters

Silicon space cells, 2 cm x 2 cm, with 10 ohm-cm p-base resistivity, 8-mil base thickness, and no back-surface fields have been investigated over the temperature range from 301 to 223 K by measurements of dark forward and reverse current-voltage characteristics and current-voltage relations under illumination. From dark forward bias data, the first and second diode saturation currents, I01 and I02, are determined and hence the base diffusion length and lifetime of minority carriers as functions of temperature. Lifetime increases exponentially with temperature and is explained by a Shockley-Read-Hall model with deep recombination levels 0.245 eV above the valence band. The I02 variation with temperature follows the Sah-Noyce-Shockley-Choo model except at low temperature where extra transitions raise the value above the predicted level. Reverse bias current at low voltage is a thermally assisted tunneling process via deep levels which are observed in base recombination at higher temperatures. The tunneling effects tend to become independent of temperature in the low-temperature region. These results demonstrate the ability to deduce basic parameters such as lifetime from simple measurements and show that back-surface fields offer no advantage at temperatures below 230 K. The analysis also explains the fall in lifetimes observed as the base conductivity increases, attributing it to native defects (perhaps carbon-oxygen-vacancy complexes) rather than the concentration of base dopant.

Anspaugh, B. E.↗

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗

A simple theory of back surface field /BSF/ solar cells

A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.

Von Roos, O.↗

Computer simulation of plasma electron collection by PIX-II

A wake model was defined for the NASCAP/LEO finite element model for the plasma interaction experiment (PIX-II) launched to study the interaction between high-voltage large solar arrays with the space plasma environment. The cell surface model considers the individual cells, distances between interconnects, and the fraction of surface covered by interconnects. Account is taken of the electrostatic potential around the spacecraft, which travels at 7500 mps, over five times the speed of thermal ions. Ram ions are produced ahead of the array and the wake ion density is described with a geometric shadowing model. The model correctly predicted the currents in high and low bias voltages when compared to orbital data. The panel snapover, however, was projected to occur at 100 V and instead occurred at 300 V, which indicates that the snapover state is bistable. Finally, a low potential was both predicted and measured in the wake.

Mandell, M. J.↗

Development of lithium doped radiation resistent solar cells

Lithium-doped solar cells have been fabricated with initial lot efficiencies averaging 11.9 percent in an air mass zero (AMO) solar simulator and a maximum observed efficiency of 12.8 percent. The best lithium-doped solar cells are approximately 15 percent higher in maximum power than state-of-the-art n-p cells after moderate to high fluences of 1-MeV electrons and after 6-7 months exposure to low flux irradiation by a Sr-90 beta source, which approximates the electron spectrum and flux associated with near Earth space. Furthermore, lithium-doped cells were found to degrade at a rate only one tenth that of state-of-the-art n-p cells under 28-MeV electron irradiation. Excellent progress has been made in quantitative predictions of post-irradiation current-voltage characteristics as a function of cell design by means of capacitance-voltage measurements, and this information has been used to achieve further improvements in lithium-doped cell design.

Berman, P. A.↗

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

Brandhorst, H. W., Jr.↗

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 ohm-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 ohm-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1-MeV electrons to a fluence of 5 times 10 to the 15th electrons per sq cm. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short-circuit currents were within 2% of the prediction. Calculations are presented for optimum cell performance as functions of epitaxial layer thickness, radiation fluence, and substrate diffusion length.

Brandhorst, H. W., Jr.↗

Study of a rare-gas transverse fast discharge

An experimental and analytical study of a Blumlein-type transverse fast discharge operating with He and Xe are presented. An electro-optical voltage probe was used to measure the discharge voltage, and the measured voltages were in agreement with the computed voltages. The analytical model was used to predict the dependence of the discharge efficiency for producing metastables and ions on the important plasma and external circuit parameters. In He the ion efficiency is greater than the metastable efficiency, while in Xe it is the opposite; the He ion efficiencies are much larger than in Xe, while Xe metastable efficiencies are much larger than in He. These differences between Xe and He are accounted by the large dissociative recombination rate of Xe compared with He.

Chubb, D. L.↗

Program Predicts Nonlinear Inverter Performance

Program developed for ac power distribution system on Shuttle orbiter predicts total load on inverters and node voltages at each of line replaceable units (LRU's). Mathematical model simulates inverter performance at each change of state in power distribution system.

Al-Ayoubi, R. R.↗

Snap-Through of Unsymmetric Laminates Using Piezocomposite Actuators

The paper discusses the concept of using a piezoceramic actuator bonded to one side of a two-layer unsymmetric cross-ply [0/90]T laminate to provide the moments necessary to snap the laminate from one stable equilibrium shape to another. This concept could be applied to the morphing of structures. A model of this concept, which is based on the Rayleigh-Ritz technique and the use of energy and variational methods, is developed. The experimental phase of the study is discussed, including the measurement of the voltage level needed to snap the laminate. The voltage measurements and shapes are compared with predictions of the models and the agreement between measurements and the predictions are reasonable, both qualitatively and quantitatively. Suggestions for future activities are presented.

Schultz, Marc R.↗

Computational Investigation of the Near-Field Plasma Plume in Ion-Ion Propulsion

A two-fluid numerical model of plasma flows was developed to investigate the plume of an ion-ion propulsion system. The densities of positive and negative ions, and the associated values of net charge, electric field, and electric potential were calculated as a function of time throughout the domain. The computational domain was chosen to be large enough (25 thruster diameters downstream of the exit plane) to allow for examining the neutralization of the plume. The resulting plasma electric potential and charge neutrality at the downstream end of the domain are shown and they indicate that it is possible to alternatively accelerate oppositely charged ions without the need for an electron-emitting neutralizer and without facing any electric potential hills that could cause stagnation. However, compared to existing literature on ion-ion plasma thrusters, the results from this simulation predict a longer length-scale for voltage decay.

Sankaran, K.↗

A Thermal Runaway Failure Model for Low-Voltage BME Ceramic Capacitors with Defects

Reliability of base metal electrode (BME) multilayer ceramic capacitors (MLCCs) that until recently were used mostly in commercial applications, have been improved substantially by using new materials and processes. Currently, the inception of intrinsic wear-out failures in high quality capacitors became much greater than the mission duration in most high-reliability applications. However, in capacitors with defects degradation processes might accelerate substantially and cause infant mortality failures. In this work, a physical model that relates the presence of defects to reduction of breakdown voltages and decreasing times to failure has been suggested. The effect of the defect size has been analyzed using a thermal runaway model of failures. Adequacy of highly accelerated life testing (HALT) to predict reliability at normal operating conditions and limitations of voltage acceleration are considered. The applicability of the model to BME capacitors with cracks is discussed and validated experimentally.

reliability↗

Plasma Interaction with International Space Station High Voltage Solar Arrays

The International Space Station (ISS) is presently being assembled in low-earth orbit (LEO) operating high voltage solar arrays (-160 V max, -140 V typical with respect to the ambient atmosphere). At the station's present altitude, there exists substantial ambient plasma that can interact with the solar arrays. The biasing of an object to an electric potential immersed in plasma creates a plasma "sheath" or non-equilibrium plasma around the object to mask out the electric fields. A positively biased object can collect electrons from the plasma sheath and the sheath will draw a current from the surrounding plasma. This parasitic current can enter the solar cells and effectively "short out" the potential across the cells, reducing the power that can be generated by the panels. Predictions of collected current based on previous high voltage experiments (SAMPIE (Solar Array Module Plasma Interactions Experiment), PASP+ (Photovoltaic Array Space Power) were on the order of amperes of current. However, present measurements of parasitic current are on the order of several milliamperes, and the current collection mainly occurs during an "eclipse exit" event, i.e., when the space station comes out of darkness. This collection also has a time scale, t approx. 1000 s, that is much slower than any known plasma interaction time scales. The reason for the discrepancy between predictions and present electron collection is not understood and is under investigation by the PCU (Plasma Contactor Unit) "Tiger" team. This paper will examine the potential structure within and around the solar arrays, and the possible causes and reasons for the electron collection of the array.

John W. Heard↗