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At least 91 records · Page 5

FLEXIBLE POWER TRANSFORMERS TO IMPROVE RESILIENCY OF TRANSMISSION NETWORKS

For decades, transformer flexibility of operation has been limited to adjustable voltage ratio and, in some cases, several ratings with staged cooling. Transformers reconnectable to multiple voltage ratings have been primarily applied as emergency replacements. Other versions of “flexible transformers” were developed for continuous, long-term operation at specific sites, with application limited to large utilities. A new technology that supports today’s power systems adaptability requirements has been developed to provide not only voltage and power rating flexibility, but also an adjustable short-circuit impedance. This last, unique feature allows for a closer match to actual system operational requirements and could be used in the future to enhance resiliency and improve dynamic control of electrical grids. While the solution’s fundamentals have already been introduced in several technical forums, the intention of this article is to focus on the potential benefits of this new type of transformer and share the deployment experience of a full-scale prototype that has been in operation in a major U.S. utility since 2021

flexible transformer, resilient grid, variable lea↗

An Inrush Current Limiting Method for Grid-Connected Converters Considering Grid Voltage Disturbances

To support the electric power grid, some grid-connected converters are required to ride through abnormal grid conditions, including voltage disturbances. However, at the moment, when a grid voltage disturbance happens, a large inrush current could be induced due to the large difference between the grid and converter output pulsewidth modulation (PWM) voltages. This inrush current could be more severe in the faster switching SiC-based multilevel converter, which only needs a small filter inductance to meet its normal operation requirements, such as harmonics and peak ripple currents. In this article, a PWM mask method is used to limit the inrush current. With this method, the inrush current can be effectively limited to a preset value and can help the converter ride through grid voltage disturbances. Furthermore, the method is validated through experiments conducted on a single-phase SiC-based five-level converter considering low voltage, high voltage, and phase angle disturbances.

42 ENGINEERING↗

Towards the Flexibility of HVDC-Interconnected Systems: A Novel Emergency Freqeuncy Response Model

In this paper, we propose a novel multi-time scale emergency frequency response model by unlocking the flexibility of High Voltage Direct Current (HVDC) systems. Unlike assigning power ramping rates for FACTS to regulate frequency in traditional methods, this paper designs a step-change electromagnetic power frequency response (EPFR) scheme, by leveraging the temporal over/under DC voltage capability of HVDC. Wherein the Kullback-Leibler Divergence is adopted to convexify the modified swing equation after integrating the step-change power. Further, to avoid the complicated differential equations, we equivalently reformulate the duration limits of DC voltage deviation into the HVDC decreasing power ramping rates, which participate in the system primary frequency response. Finally, the new steady-state operation level of HVDC is involved with the secondary frequency response. As a result, an improved three-level algorithm is developed to solve the model, wherein the instant step-change, primary, and secondary frequency response are coordinated together. After applying the proposed frequency response scheme on the test system, the EPFR is validated to effectively provide the most instantaneous supports when faced with bulk power loss due to extreme contingencies, and the resilience is ensured within acceptable expenditures.

Jiang, Sufan↗

Integrated Coordination of Voltage Regulators with Distributed Cooperative Inverter Control in Systems with High Penetration of DGs

Increased penetration of distributed generation (DG) in recent years has a significant impact on operation and control of power systems. One of the main issues with the increased penetration of DGs is the effect of voltage rise. This paper investigates integration of coordinated voltage regulator (VRs) operation with cooperative distributed inverter control to maintain voltages in appropriate limits in distribution systems with high penetration of DGs. The coordinated VR control is used to optimize the settings of multiple nested VRs while the cooperative distributed control optimally dispatches reactive power of the DGs. The integrated approach is compared with the case without coordinated VRs control (uncoordinated local control). Simulation results illustrate the effective performance of the proposed method to achieve unified voltage profile.

coordinated voltage regulator control↗

Hypochlorite Redox Chemistry Enables High-Voltage and High-Power Saltwater Batteries

Saltwater batteries (SWBs) are promising alternatives to lithium-ion batteries for large-scale stationary energy storage. However, the performance of conventional oxygen redox-based saltwater battery systems is often constrained by sluggish oxygen evolution and reduction reactions (OER/ORR) at the cathode, leading to low voltage efficiency and limited power density. Here, OER and ORR are replaced by hypochlorite-based redox reactions through the introduction of sodium hypochlorite into saltwater. Operando pH and dissolved oxygen measurements confirm that OER and ORR are minimized and that hypochlorite redox reactions dominate the cathode behavior. Owing to the higher operating potential and faster reaction kinetics, the hypochlorite-redox-based SWBs delivers a higher discharge voltage of 3.3 V and reduced charge-discharge voltage polarization to 0.66 V. Further improvement is achieved by adjusting the saltwater pH to near-neutral conditions, increasing the discharge voltage to 3.5 V and more than doubling the peak power. The hypochlorite redox environment also exhibits chemical stability with key cell components, including the solid electrolyte and cathode current collectors. Operation of series-connected cells and cells employing hard carbon anodes demonstrates scalability and compatibility with alternative anode materials. These results provide a strong foundation for next-generation SWBs targeting large-scale stationary energy storage applications.

Go, Wooseok [ORNL]↗

A Low-Voltage Layered Na 2 TiGeO 5 Anode for Lithium-Ion Battery

Titanium-based anode materials have achieved much progress with the wide studies in lithium-ion batteries. However, these known materials usually possess high discharge voltage platforms and limited energy densities. In this work, a titanium-based oxide of Na 2 TiGeO 5 with layered structure, two-dimensional lamellar frame and exposed highly active (001) facet, exhibiting good electrochemical performance in terms of high capacity (410 mAh g –1 with a current density of 50 mA g –1 ), excellent rate capability and cycling stability with no obvious capacity attenuation after 4000 cycles, is reported. The appropriate discharge voltage plateau at around 0.2 V endows the Na 2 TiGeO 5 anode material high security compared with graphite and high energy density compared with spinel Li 4 Ti 5 O 12 . Combining the electrochemical tests and the density functional theory calculations, the Li + storage mechanism of Na 2 TiGeO 5 is elucidated and the conversion reaction process is revealed. More importantly, this study provides a way to develop low-voltage and high-capacity titanium-based anode materials for efficient energy storage.

25 ENERGY STORAGE↗

Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

cadmium telluride↗

Emergent ferroelectricity in subnanometer binary oxide films on silicon

The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. Here, we report on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in zirconium dioxide (ZrO 2 ) thin films on silicon. The emergent ferroelectricity and hysteretic polarization switching in ultrathin ZrO 2 , conventionally a paraelectric material, notably persists down to a film thickness of 5 angstroms, the fluorite-structure unit-cell size. This approach to exploit three-dimensional centrosymmetric materials deposited down to the two-dimensional thickness limit, particularly within this model fluorite-structure system that possesses unconventional ferroelectric size effects, offers substantial promise for electronics, demonstrated by proof-of-principle atomic-scale nonvolatile ferroelectric memory on silicon. Additionally, it is also indicative of hidden electronic phenomena that are achievable across a wide class of simple binary materials.

42 ENGINEERING↗

Big Data Synchrophasor Monitoring and Analytics for Resiliency Tracking (BDSMART)

This report contains key findings from a project titled Big Data Synchrophasor Monitoring and Analytics for Resiliency Tracking (BDSMART), which was carried out through a collaborative effort of a team of researchers from Texas A&M Engineering Experiment Station, Temple University, and Quanta Technology, LLC. The in-kind support came from OSIsoft (acquired by AVEVA), which provided their PI Historian software to demonstrate the use case of streaming PMU data. The first section of the report describes the project goals and objectives related to the development of Machine Learning (ML) models capable of detecting and classifying events by processing phasor measurements captured in the field by Phasor Measurement Units (PMUs). The data for this study was contributed by the utilities/ISOs from the Western and Eastern interconnects and ERCOT, further referred to as Interconnect B (IC B), Interconnect A (IC A), and Interconnect C (IC C), respectively. The approach that the BDSMART Research Team proposed and the key research tasks defined by the team are outlined in this section. The next section describes the technical approach. We first discuss the data constraints related to the PMU measurements and data interpretation constraints imposed by the data contributors. They provided neither the topological information of the grid nor PMU placement locations and captured recorded data at very few locations in the system with the reporting rate of either 30 or 60 fps. The recordings are mostly positive sequence voltage, frequency, and ROCOF, and in some limited cases, three-phase voltages and currents. We then reflect on the bad data issues that stem from poor recording practices and vague definitions of the PMU status bits to supposedly be used for bad data identification. Finally, the data discovery points to imprecise time stamps with incomplete event start/end time, as well as inconsistent and incomplete event labeling, which combined make the implementation of the data models using supervising learning quite challenging. Following the data discovery study, we hypothesize that because the IC B data has the most complete labels, we should focus our model development on that data and then test it on data from other interconnects. We also define the common metrics used to evaluate the results from the ML algorithm tests. We concluded this section by summarizing the common ML models we used and explaining how we implemented and tested them. The issues from this section are expanded in the Training Dataset Report from this project. The final section of this report deals with the accomplishments and conclusions. As the accomplishments, we formulate the problem we are solving and what is achieved by solving the problem. We then reflect on each of the analytics tools we developed and point out the performance of each tool when applied to solving the mentioned problems. We reference this work for further details to the papers we published on each tool. In the conclusions, we give recommendations on how to improve future PMU recording practices to facilitate the ML algorithm implementation and guidance for the future standardization work aimed at clarifying the ambiguities associated with the PMU status bits. We finally list future tasks that can bring about further improvements in the proposed algorithms. The issues from this section are expanded in the Training, and Test Dataset Report filed at the project completion date.

97 MATHEMATICS AND COMPUTING↗

Constructing uniform oxygen defect engineering on primary particle level for high-stability lithium-rich cathode materials

Lithium-rich layered cathode materials are considered to be research focus of cathode candidates for next generation lithium-ion batteries due to their high specific capacity and low cost. However, lattice deoxidation associated with elemental migration and internal local shrinkage usually results in deteriorated cyclic performance and notorious voltage attenuation, severely limiting its application. In this paper, we have successfully injected uniform oxygen defects into surface region of Li 1.2 Ni 0.13 Co 0.13 Mn 0.54 O 2 primary particles under the high-pressure and weak carbonate environment. Various experimental investigations indicate that the injected robust oxygen defects can not only mitigate detrimental interfacial reactions but also suppress unfavorable lattice variation and particle breakage. More importantly, theoretical calculations unravel the critical roles of oxygen defects in regulating energy band structure for strengthened anionic reversibility. Owing to stabilization effects of unique oxygen defect engineering, the modified Li 1.2 Ni 0.13 Co 0.13 Mn 0.54 O 2 cathode has harvested dramatically enhanced electrochemical performance including a high initial coulombic efficiency of 96.6%, an outstanding capacity retention of 91.96% (1C, 200 cycles) and suppressed voltage decay of only 1.62 mV per cycle. Therefore, this facile and effective defect engineering strategy could establish new guidance for promoting practical application of Li-rich Mn-based cathode material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Thermal Modeling and Limitations for Power Electronics Embedded in Medium-Voltage Cables

As next-generation energy technologies gain traction and power demand increases, the existing electrical infrastructure faces significant stress, prompting innovative solutions to enhance the grid's capacity and lifespan. This work explores the possibility of embedding medium-voltage (MV) power electronics directly inline with the cable, and the resulting thermal challenges. Since the majority of power distribution cables installed in the U.S. are passively cooled, the work focuses primarily on passive cooling, with an emphasis on the limitations of axial heat spreading within the cable. To date, literature on axial spreading of high incident heat loads on cables and cable environments is limited, typically reporting cases with <10 W of incident heat load. This work will explore the considerations, limits, and tradeoffs of cable-embedded heat loads significantly larger than the cable losses. Both external and internal effects are modeled analytically in nondimensional terms via a Biot number analysis, allowing fundamental limits and tradeoffs to be derived. The work culminates in the design and experimental validation of a cable-embedded thermal system capable of passively dissipating 300 W of heat from a coaxial SiC mosfet switch module over a length of 20 cm, thus validating the possibility of MV cable-embedded power electronics from a thermal standpoint.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Limiter-aware adaptive excitation control for hydropower generators with legacy voltage regulation systems

Hydropower units often rely on legacy excitation systems with fixed automatic voltage regulator (AVR) settings, but parameter drift, changing operating conditions, and evolving grid-service demands can degrade terminal-voltage regulation over time. This problem should be addressed because poor voltage regulation affects reactive-power support, system stability, and reliable plant operation, and replacing installed AVR and limiter logic is costly and disruptive in practice. To address this issue, this paper proposes a retrofit-friendly enhancement for hydropower generator excitation systems that combines adaptive tuning of the AVR middle lead–lag branch with a small proportional-integral correction for removing steady bias and slow drift. The adaptive laws are normalized, projection-bounded, and equipped with leakage, while adaptation is enabled only in the middle branch. Thus, the intent of the underexcitation and overexcitation limiters, as well as legacy current and rate limits, remains unchanged. Stability is analyzed under incremental performance assumptions, yielding boundedness and asymptotic tracking in the absence of saturation. The method is evaluated using real operational data from a utility-scale hydropower unit at Rocky Reach Dam, Unit C-8. Compared with the fixed AVR baseline, the proposed method reduces terminal-voltage mean squared error by about 70%, removes long periods of steady-state bias, and improves transient tracking while coexisting with limiter actions. These results show that substantial voltage-control improvement can be achieved on existing hydropower units with minimal integration effort and without replacing the installed AVR structure.

ESST5B model↗

Identification of Recombination Losses in CdSe/CdTe Solar Cells from Spectroscopic and Microscopic Time-Resolved Photoluminescence

Due to the lowest-cost and best reliability, CdTe solar cells are the leading thin-film photovoltaic technology. Increasing open-circuit voltage by reducing recombination represents the most promising path toward further improvements. Analysis is needed to identify limitations that cause efficiency losses. To achieve this goal for Cu-doped CdSe/CdTe solar cells, time-resolved spectroscopy and microscopy are developed and applied. Recombination lifetimes and radiative efficiency identify that defect-mediated recombination is the dominant voltage loss mechanism. When carrier lifetimes are averaged over many crystalline grains, they increase from 180 to 430 ns when Al2O3 is applied to the back contact. The quasi-Fermi-level splitting correspondingly increases from 880–905 to 906–931 mV, indicating a pathway to overcome the long-standing 900 mV voltage limitation. However, the dominant recombination losses are attributed to the absorber bulk. From microscopic carrier lifetime measurements, it is identified that space charge fields due to charged grain boundaries (GBs) lead to recombination in the CdTe absorber bulk. At high injection, GB space charge fields are screened, but that occurs above 1 Sun excitation conditions. Alloying with selenium in the near-interface CdSeTe absorber region reduces GB losses and is identified as one of the factors leading to high radiative and power conversion efficiency.

14 SOLAR ENERGY↗

Photophysical Properties and Phase Behavior of Ultrawide Photovoltaic Bandgap Cesium–Lead-Based Triple Halide Perovskites

Metal halide perovskite films in the top cell of triple-junction tandems require bandgaps around 2.0 eV to achieve current matching, assuming that the middle absorbing layer is the commonly used FAPbI 3 composition and the bottom cell has a bandgap around 1.1 eV. Unfortunately, mixed organic/inorganic metal halide perovskites that have the necessary Br content to reach a bandgap of 2.0 eV segregate into iodine-rich and bromine-rich phases under illumination, limiting their obtainable voltage. Previous reports have shown improved photostability using either Cs-based inorganic compositions or Cl incorporation on the X-site. Here, we investigate the inorganic triple halide compositional space CsPb­(I 1–x–y Br y Cl x ) 3 where bandgaps near 2.0 eV are expected based on the knowledge that CsPbI2Br has a bandgap of 1.90 eV. Incorporation of Cl occurs readily for x ≤ 0.07–0.10 within perovskites with a Br content of 0.3 ≤ y ≤ 0.42. When x >0.1, X-ray diffraction and photoluminescence (PL) measurements indicate that multiple compositional phases form. We hypothesize that the variable sizes of the three halide ions are not supported within the rigid Cs lattice, resulting in the formation of multiple compositional phases. The photoluminescence quantum yield of the single-phase compositional space–CsPb­(I 1–x–y Br y Cl x ) 3 where x ≤ 0.07was typically 0.001–0.004%, most likely as a result of a high defect density, including mobile iodine species. PL light-soaking measurements of many perovskite compositions with bandgaps in the range of 1.89–2.05 eV demonstrate that phase segregation occurs when initial bandgaps are above 1.95 eV regardless of halide content: indicating further iodide oxidation and corresponding migration under illumination. The conclusion is that further compositional or additive engineering is necessary for the development of inorganic triple halide compositions that accomplish the elusive goal of fabricating high-quality and photostable 2.0 eV films for use in multijunction tandems.

Electrical conductivity↗

Mitigating Band Tailing in Kesterite Solar Absorbers: Ab Initio Quantum Dynamics

Open-circuit voltage deficits are limiting factors in kesterite solar cells. Addressing this issue by suppressing band tailing and nonradiative charge recombination is essential for enhancing the performance. We employ ab initio nonadiabatic molecular dynamics to elucidate the origin of band tailing and charge losses and propose a mitigation strategy. The simulations show that Cu–Zn disorder, associated with antisite defect clusters [Cu Zn +Zn Cu ], is a significant source of band tailing in kesterites, as evidenced by the much larger Urbach energy in disordered than ordered kesterites. Cu–Zn disorder gives rise to new sulfur-centered coordination polyhedra, increases structural inhomogeneity, changes electrostatic potential at sulfur centers, and shifts the S(3p) orbital energy. Differences in the S(3p)/Cu(3d) and S(3p)/Sn(5s) hybridization strengths and the S(3p) orbital energy shift reduce the band gap by 0.37 eV. Furthermore, Cu–Zn disorder enhances vibrational motion of sulfur anions and surrounding cations, increasing band gap fluctuations by 15 meV. The stronger electron–phonon interactions reduce charge carrier lifetimes and limit the kesterite solar cell efficiency. Partial substitution of Zn with Cd facilitates structural ordering and significantly suppresses band tailing, particularly in disordered systems. The improvement can be attributed to the larger atomic radius and mass of Cd, which weakens bonding around the anion, suppresses S-related vibrations within the covalent tetrahedra, and reduces nonadiabatic coupling, thereby increasing charge carrier lifetimes. The reported results establish the key influence of cation disorder on band tailing and reduced charge carrier lifetimes in kesterites and highlight cation disorder engineering as a strategy to achieve high-efficiency kesterite solar cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A redox-active organic cation for safer high energy density Li-ion batteries

Ni-rich layered cathode materials are at the forefront to be deployed in high energy density Li-ion batteries for the automotive market. However, the intrinsic poor structural and interfacial stability during overcharging could trigger violent thermal failure, which severely limits their wide application. To protect the Ni-rich cathode from overcharging, we firstly report a redox-active cation, thioether-substituted diaminocyclopropenium, as an electrolyte additive to limit the cell voltage within the safe value during overcharging. The organic cation demonstrates a record-breaking electrochemical reversibility at ~4.55 V versus Li + /Li and solubility (0.5 M) in carbonate-based electrolyte. The protection capability of the additive was explored in two cell chemistries: a LiNi 0.8 Co 0.15 Al 0.05 O 2 /graphite cell and a LiNi 0.8 Co 0.15 Al 0.05 O 2 /silicon–graphene cell with areal capacities of ~2.2 mA h cm -2 and ~3 mA h cm -2 , respectively. With 0.2 M addition, the LiNi 0.8 Co 0.15 Al 0.05 O 2 /graphite cell survived 54 cycles at 0.2C with 100% overcharge. Moreover, the cell can carry an utmost 4.4 mA cm -2 (2C) with 100% overcharge and a maximum capacity of 7540% SOC at 0.2C.

25 ENERGY STORAGE↗

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗