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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

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NASA NTRS1984

Charge Control Investigation of Rechargeable Lithium Cells

An ambient temperature rechargeable Li-TiS2 cell was cycled under conditions which simulate aerospace applications. A novel charge/discharge state-of-charge control scheme was used, together with tapered current charging, to overcome deleterious effects associated with end-of-charge and end-of-discharge voltages. The study indicates that Li-TiS2 cells hold promise for eventual synchronous satellite-type applications. Problem areas associated with performance degradation and reconditioning effects are identified.

Otzinger, B.↗

NASA NTRS1985

Geosynchronous Performance of a Lithium-titanium Disulfide Battery

An ambient temperature rechargeable Lithium-Titanium disulfide (Li-TiS2) five cell battery has completed the first orbital year of accelerated synchronous orbit testing. A novel charge/discharge, state of charge (SOC) control scheme is utilized, together with taper current charge backup to overcome deleterious effects associated with high end of charge and low end of discharge voltages. It is indicated that 10 orbital years of simulated synchronous operation may be achieved. Preliminary findings associated with cell matching and battery performance are identified.

Otzinger, B.↗

NASA NTRS1989

Electrochemical behavior of heavily cycled nickel electrodes in Ni/H2 cells containing electrolytes of various KOH concentrations

A study has been made of charge and discharge voltage changes with cycling of Ni/H2 cells containing electrolytes of various KOH concentrations. A study has also been made of electrochemical behavior of the nickel electrodes from the cycled Ni/H2 cells as a function of overcharge amounts. Discharge voltages depressed gradually with cycling for cells having high KOH concentrations (31 to 36 percent), but the voltages increased for those having low KOH concentrations (21 to 26 percent). To determine if there was a crystallographic change of the active material due to cycling, electrochemical behavior of nickel electrodes was studied in an electrolyte flooded cell containing either 31 or 26 percent KOH electrolyte as a function of the amount of overcharge. The changes in discharge voltage appear to indicate crystal structure changes of active material from gamma-phase to beta-phase in low KOH concentrations, and vice versa in high KOH concentration.

Lim, H. S.↗

NASA NTRS1996

Thickness Measurement Device for Ice/Water Mixture

A device and method are provided for determining the thickness of an ice and water mixture accumulated on the outer surface of an object. First and second total impedance sensors are operated at first and second frequencies over which the dielectric constants for water and ice are substantially the same. Corresponding first and second AC total impedance measuring circuits are coupled to the first and second sensors to produce output voltages based on the total impedance changes sensed by the sensors. A processor is coupled to the first and second measuring circuits to generate a voltage ratio using the measured output voltages. The voltage ratio is indicative of the thickness of the ice and water mixture. The novelty of the present invention is the use of two frequencies and dual geometry impedance sensors in order to be sensitive to the formation of ice. Thus, critical situations created by the presence of solid ice can be averted. The device is simple and is easily incorporated into current technology thereby making its realization cost- effective.

Weinstein, Leonard M.↗

DOE OSTI2023

Position sensing circuit for an electrostatically driven MEMS device

The present disclosure relates to a system for detecting movement of a microelectromechanical system (MEMS) device. The system uses a drive voltage signal source for generating a low frequency drive voltage signal for driving the MEMS device. An excitation signal source may be used for generating an excitation signal which is also applied to the MEMS device. The excitation signal has a frequency which is above a physical response capability of the MEMS device, such that operation of the MEMS device is not significantly affected by the excitation signal. A sensing impedance is used to help generate a signal which is responsive to the capacitance of the MEMS device. The capacitance of the MEMS device changes in response to movement of the MEMS device. An output subsystem is provided which responds to changes sensed by the sensing impedance, and which produces an output voltage signal. A filter filters the output voltage signal to produce a filtered output voltage signal. The filtered output voltage signal is indicative of a position of the MEMS device.

Panas, Robert Matthew↗

DOE OSTI2023

Effect of surface functional groups on MXene conductivity

In this work, we report the in-plane electron transport in the MXenes (i.e., within the MXene layers) as a function of composition using the density-functional tight-binding method, in conjunction with the non-equilibrium Green’s functions technique. Our study reveals that all MXene compositions have a linear relationship between current and voltage at lower potentials, indicating their metallic character. However, the magnitude of the current at a given voltage (conductivity) has different trends among different compositions. For example, MXenes without any surface terminations (Ti 3 C 2 ) exhibit higher conductivity compared to MXenes with surface functionalization. Among the MXenes with –O and –OH termination, those with –O surface termination have lower conductivity than the ones with –OH surface terminations. Interestingly, conductivity changes with the ratio of –O and –OH on the MXene surface. Our calculated I–V curves and their conductivities correlate well with transmission functions and the electronic density of states around the Fermi level. The surface composition-dependent conductivity of the MXenes provides a path to tune the in-plane conductivity for enhanced pseudocapacitive performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1976

Ultrasonic evaluation of high voltage circuit boards

Preliminary observations indicate that an ultrasonic scanning technique may be useful as a quick, low cost, nondestructive method for judging the quality of circuit board materials for high voltage applications. Corona inception voltage tests were conducted on fiberglass-epoxy and fiberglass-polyimide high pressure laminates from 20 to 140 C. The same materials were scanned ultrasonically by utilizing the single transducer, through-transmission technique with reflector plate, and recording variations in ultrasonic energy transmitted through the board thickness. A direct relationship was observed between ultrasonic transmission level and corona inception voltage. The ultrasonic technique was subsequently used to aid selection of high quality circuit boards for the Communications Technology Satellite.

Klima, S. J.↗

NASA NTRS1976

Ultrasonic evaluation of high voltage circuit boards

Klima, S. J.↗

NASA NTRS1977

A note on the assumption of quasiequilibrium in semiconductor junction devices

It is shown that the quasi-equilibrium theory for p-n junctions, as originally proposed by Shockley (1949), does not apply under conditions involving an application of comparatively low external voltages. A numerical example indicates that the quasi-equilibrium assumption must be discarded as soon as the voltage is increased beyond a certain critical value, although the system may still be in a low-level injection regime. It is currently not known which set of simplifying assumptions may replace the quasi-equilibrium assumptions. Possible analytic simplification relations applicable to moderate or high injection levels can, perhaps, be based on an approach considered by Mari (1968) and Choo (1971, 1972).

Von Roos, O.↗

DOE OSTI2023

Screening method for pin diodes used in microwave limiters

A method of testing a PIN diode for a power limiter circuit comprises measuring a reverse bias current of the PIN diode; applying a reverse bias voltage to the PIN diode; increasing the reverse bias voltage until the reverse bias current of the PIN diode reaches a threshold current indicative of a reverse voltage breakdown; and determining whether the reverse bias breakdown voltage of the PIN diode is within an acceptable range of reverse bias breakdown voltages corresponding to a power range at which the power limiter circuit would enter power limiting mode with the PIN diode.

Hanna, Charles John↗

NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗

NASA NTRS2007

Nonvolatile Analog Memory

A nonvolatile analog memory uses pairs of ferroelectric field effect transistors (FFETs). Each pair is defined by a first FFET and a second FFET. When an analog value is to be stored in one of the pairs, the first FFET has a saturation voltage applied thereto, and the second FFET has a storage voltage applied thereto that is indicative of the analog value. The saturation and storage voltages decay over time in accordance with a known decay function that is used to recover the original analog value when the pair of FFETs is read.

MacLeod, Todd C.↗

DOE OSTI2025

Small-Signal Stability of Grid-Forming Inverters Using Current-Limiting and Frequency Stabilization

This paper presents a small-signal stability analysis of grid-forming (GFM) inverters under current-limiting conditions. It examines how adjustments in virtual impedance angles, implemented through advanced current-limiting and frequency stabilization techniques, influence small-signal stability. This paper studies a GFM inverter control integrating a fictitious power technique stabilizing primary control by adding a virtual power term and a hybrid current limiter integrating virtual impedance in the anti-wind-up feedback with current reference saturation limiting. A small-signal model is developed to assess the impact of virtual impedance angles on GFM inverter dynamics during grid disturbances, such as voltage drops. The findings indicate that although increasing the virtual impedance angle (to make it more inductive) enhances large-signal stability and voltage support during faults, it can induce oscillations and lead to instability if the angle exceeds certain thresholds. Based on the small-signal models, this paper provides design considerations for the current-limiter impedances to ensure reliable GFM inverter behavior under grid disturbances while maintaining small-signal stability.

current limiting↗

NASA NTRS1974

Inverter ratio failure detector

A failure detector which detects the failure of a dc to ac inverter is disclosed. The inverter under failureless conditions is characterized by a known linear relationship of its input and output voltages and by a known linear relationship of its input and output currents. The detector includes circuitry which is responsive to the detector's input and output voltages and which provides a failure-indicating signal only when the monitored output voltage is less by a selected factor, than the expected output voltage for the monitored input voltage, based on the known voltages' relationship. Similarly, the detector includes circuitry which is responsive to the input and output currents and provides a failure-indicating signal only when the input current exceeds by a selected factor the expected input current for the monitored output current based on the known currents' relationship.

Wagner, A. P.↗

NASA NTRS1993

Phase-Discriminating Capacitive Sensor System

Crosstalk eliminated by maintaining voltages on all electrodes at same amplitude, phase, and frequency. Each output feedback-derived control voltage, change of which indicates proximity-induced change in capacitance of associated sensing electrode. Sensors placed close together, enabling imaging of sort. Images and/or output voltages used to guide robots in proximity to various objects.

Vranish, John M.↗

DOE OSTI2022

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

Nomoto, Kazuki↗

NASA NTRS1989

Asymmetrical SRAM Cells For Radiation Tests

Features of circuits altered to increase or decrease sensitivity to radiation. State-space analysis used to analyze single-event-upset behavior of memory cell. When voltage on node a is set at one of indicated initial values Vao and then released, voltages on nodes a and b then follow indicated trajectory to final logic "one" or logic "zero" state. Ability to do this important for design of radiation-detecting integrated circuits (deliberately made more sensitive to ionizing radiation) and "radiation-hardened" integrated circuits - those intended to be relatively invulnerable to intense radiation.

Buehler, Martin G.↗

NASA NTRS1991

Modeling of surface flashover on spacecraft

A model for predicting the onset of surface flashover discharges (SFDs) in the context of high voltage pulse power modulators was developed and used to investigate mechanisms leading to the onset of SFDs. We demonstrated that it is possible to analyze surface discharges in a manner similar to gas phase discharges using transport coefficients such as the first Townsend coefficient. Our parameterization of various methods to prevent, or at least delay, the onset of SFDs was not particularly successful in that many of the strategies that we investigated do not yield significantly improved performance. The only safe strategy to reduce the occurrence of SFDs is to prevent the dielectric from being charged in the first place. This leads one to consider passive or active schemes which employ the low pressure of attaching gases which flood the surface prior or coincident to pulsing the high voltage apparatus. Our calculations indicate that only small amounts gas (10s Torr effective pressure at substrate) would be sufficient for many of the anticipated applications. If the surface is flooded only when high voltage is applied across the dielectric, the gas consumption would be nominal.

Kushner, Mark J.↗