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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Surface interactions and high-voltage current collection

Spacecraft of the future will be larger and have higher power requirements than any flown to date. For several reasons, it is desirable to operate a high power system at high voltage. While the optimal voltages for many future missions are in the range 500 to 5000 volts, the highest voltage yet flown is approximately 100 volts. The NASCAP/LEO code is being developed to embody the phenomenology needed to model the environmental interactions of high voltage spacecraft. Some plasma environment are discussed. The treatment of the surface conductivity associated with emitted electrons and some simulations by NASCAP/LEO of ground based high voltage interaction experiments are described.

Mandell, M. J.↗
NASA NTRS1985

Space test program of high-voltage solar array-space plasma interactions

Future spacecraft, notably the proposed Space Station, will require power systems much larger than have previously been flown. It is recognized that at higher voltages, and at the relatively high plasma density present at low Earth orbital altitudes, undesirable interactions between the high voltage solar array and the space plasma will occur. Space experiments on high voltage solar array space plasma interactions in low Earth orbit are an absolute requirement for confident design of a higher voltage solar array. Experiments are presently being identified to provide the necessary space data for calibration of ground testing, validation of analytical models, and development of design guidelines required for confident design of high voltage solar arrays in space. A proposed flight experiment program which is designed to obtain the required data is summarized.

Carruth, M. R., Jr.↗
NASA NTRS1988

Arcing and discharges in high-voltage subsystems of Space Station

Arcing and other types of electrical discharges are likely to occur in high-voltage subsystems of the Space Station. Results from ground and space experiments on the arcing of solar cell arrays are briefly reviewed, showing that the arcing occurs when the conducting interconnects in the arrays are at negative potential above a threshold, which decreases with the increasing plasma density. Furthermore, above the threshold voltages the arcing rate increases with the plasma density. At the expected operating voltages (approximately 200 V) in the solar array for the space station, arcing is expected to occur even in the ambient ionospheric plasma. If the ionization of the contaminants increases the plasma density near the high-voltage systems, the adverse effects of arcing on the solar arrays and the space station are likely to be enhanced, In addition to arcing other discharge processes are likely to occur in high-voltage subsystems. For example, Paschen discharge is likely to occur when the neutral density N sub n greater that 10 to the 12th cu cm, the corresponding neutral pressure P greater than 3 x 10 to the -5 Torr.

Singh, N.↗
NASA NTRS1989

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Lichtenberger, A. W.↗
NASA NTRS1991

Characterization of vertical electric fields and associated voltages induced on a overhead power line from close artificially initiated lightning

Measurements were characterized of simultaneous vertical electric fields and voltages induced at both ends of a 448 m overhead power line by artificially initiated lightning return strokes. The lightning discharges struck ground about 20 m from one end of the line. The measured line voltages could be grouped into two categories: those in which multiple, similarly shaped, evenly spaced pulses were observed, which are called oscillatory; and those dominated by a principal pulse with subsidiary oscillations of much smaller amplitude, which are called impulsive. Voltage amplitudes range from tens of kilovolts for oscillatory voltages to hundreds of kilovolts for impulsive voltages.

Rubinstein, Marcos↗
NASA NTRS1924

The effect of electrode temperature on the sparking voltage of short spark gaps

This report presents the results of an investigation to determine what effect the temperature of spark plug electrodes might have on the voltage at which a spark occurred. A spark gap was set up so that one electrode could be heated to temperatures up to 700 degrees C., while the other electrode and the air in the gap were maintained at room temperature. The sparking voltages were measured both with direct voltage and with voltage impulse from ignition coil. It was found that the sparking voltage of the gap decreased materially with increase of temperature. This change was more marked when the hot electrode was of negative polarity. The phenomena observed can be explained by the ionic theory of gaseous conduction, and serve to account for certain hitherto unexplained actions in the operation of internal combustion engines. These results indicate that the ignition spark will pass more readily when the spark-plug design is such as to make the electrodes run hot. This possible gain is, however, very closely limited by the danger of producing preignition. These experiments also show that sparking is somewhat easier when the hot electrode (which is almost always the central electrode) is negative than when the polarity is reversed.

Silsbee, F B↗
NASA NTRS1994

Improved Programmable High-Voltage Power Supply

Improved dc-to-dc converter functions as programmable high-voltage power supply with low-power-dissipation voltage regulator on high-voltage side. Design of power supply overcomes deficiencies of older designs. Voltage regulation with low power dissipation provided on high-voltage side.

Castell, Karen↗
NASA NTRS1995

Design and Development of High Voltage Direct Current (DC) Sources for the Solar Array Module Plasma Interaction Experiment

Two programmable, high voltage DC power supplies were developed as part of the flight electronics for the Solar Array Module Plasma Interaction Experiment (SAMPIE). SAMPIE's primary objectives were to study and characterize the high voltage arcing and parasitic current losses of various solar cells and metal samples within the space plasma of low earth orbit (LEO). High voltage arcing can cause large discontinuous changes in spacecraft potential which lead to damage of the power system materials and significant Electromagnetic Interference (EMI). Parasitic currents cause a change in floating potential which lead to reduced power efficiency. These primary SAMPIE objectives were accomplished by applying artificial biases across test samples over a voltage range from -600 VDC to +300 VDC. This paper chronicles the design, final development, and test of the two programmable high voltage sources for SAMPIE. The technical challenges to the design for these power supplies included vacuum, space plasma effects, thermal protection, Shuttle vibrations and accelerations.

Bibyk, Irene K.↗
NASA NTRS1995

High-voltage space-plasma interactions measured on the PASP Plus test arrays

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

Guidice, Donald A.↗
NASA NTRS1997

Investigation of an Aberrant Cell Voltage During the Filling of a Large Lithium Thionyl Chloride Cell

The investigation of an aberrant cell voltage during the filling of a large lithium thionyl chloride cell summary is at: an aberrant voltage trace was noted during the review of cell filling data; incident was traced to an interruption during filling; experimentation suggested oxidizable sites within the carbon electrode were responsible for the drop in voltage; the voltage anomaly could be reproduced by interrupting the filling of similar cells; and anomalous voltage dip was not due to a short.

Thaller, Lawrence H.↗
NASA NTRS1999

Suppression of Random Dopant-Induced Threshold Voltage Fluctuations in Sub-0.1-(micron)meter MOSFET's with Epitaxial and (delta)-Doped Channels

A detailed three-dimensional (3-D) statistical 'atomistic' simulation study of fluctuation-resistant sub-0.1-(micron)meter MOSFET architectures with epitaxial channels and delta doping is presented. The need for enhancing the fluctuation resistance of the sub-0.1-(micron)meter generation transistors is highlighted by presenting summarized results from atomistic simulations of a wide range of conventional devices with uniformly doped channel. According to our atomistic results, the doping concentration dependence of the random dopant-induced threshold voltage fluctuations in conventional devices is stronger than the analytically predicted fourth-root dependence. As a result of this, the scaling of such devices will be restricted by the "intrinsic" random dopant-induced fluctuations earlier than anticipated. Our atomistic simulations confirm that the introduction of a thin epitaxial layer in the MOSFET's channel can efficiently suppress the random dopant-induced threshold voltage fluctuations in sub-0.1-(micron)meter devices. For the first time, we observe an "anomalous" reduction in the threshold voltage fluctuations with an increase in the doping concentration behind the epitaxial channel, which we attribute to screening effects. Also, for the first time we study the effect of a delta-doping, positioned behind the epitaxial layer, on the intrinsic threshold voltage fluctuations. Above a certain thickness of epitaxial layer, we observe a pronounced anomalous decrease in the threshold voltage fluctuation with the increase of the delta doping. This phenomenon, which is also associated with screening, enhances the importance of the delta doping in the design of properly scaled fluctuation-resistant sub-0.1-(micron)meter MOSFET's. Index Terms-Doping, fluctuations, MOSFET, semiconductor device simulation, silicon devices, threshold.

Asenov, Asen↗
NASA NTRS2000

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Asenov, Asen↗
NASA NTRS2001

High Voltage SPT Performance

A 2.3 kW stationary plasma thruster designed to operate at high voltage was tested at discharge voltages between 300 and 1250 V. Discharge specific impulses between 1600 and 3700 sec were demonstrated with thrust between 40 and 145 mN. Test data indicated that discharge voltage can be optimized for maximum discharge efficiency. The optimum discharge voltage was between 500 and 700 V for the various anode mass flow rates considered. The effect of operating voltage on optimal magnet field strength was investigated. The effect of cathode flow rate on thruster efficiency was considered for an 800 V discharge.

Manzella, David↗
NASA NTRS2003

Ion Voltage Diagnostics in the Far-Field Plume of a High-Specific Impulse Hall Thruster

The effects of the magnetic field and discharge voltage on the far-field plume of the NASA 173Mv2 laboratory-model Hall thruster were investigated. A cylindrical Langmuir probe was used to measure the plasma potential and a retarding potential analyzer was employed to measure the ion voltage distribution. The plasma potential was affected by relatively small changes in the external magnetic field, which suggested a means to control the plasma surrounding the thruster. As the discharge voltage increased, the ion voltage distribution showed that the acceleration efficiency increased and the dispersion efficiency decreased. This implied that the ionization zone was growing axially and moving closer to the anode, which could have affected thruster efficiency and lifetime due to higher wall losses. However, wall losses may have been reduced by improved focusing efficiency since the total efficiency increased and the plume divergence decreased with discharge voltage.

Hofer, Richard R.↗
NASA NTRS2004

High Voltage Solar Array Arc Testing for a Direct Drive Hall Effect Thruster System

The deleterious effects of spacecraft charging are well known, particularly when the charging leads to arc events. The damage that results from arcing can severely reduce system lifetime and even cause critical system failures. On a primary spacecraft system such as a solar array, there is very little tolerance for arcing. Motivated by these concerns, an experimental investigation was undertaken to determine arc thresholds for a high voltage (200-500 V) solar array in a plasma environment. The investigation was in support of a NASA program to develop a Direct Drive Hall-Effect Thruster (D2HET) system. By directly coupling the solar array to a Hall-effect thruster, the D2HET program seeks to reduce mass, cost and complexity commonly associated with the power processing in conventional power systems. In the investigation, multiple solar array technologies and configurations were tested. The cell samples were biased to a negative voltage, with an applied potential difference between them, to imitate possible scenarios in solar array strings that could lead to damaging arcs. The samples were tested in an environment that emulated a low-energy, HET-induced plasma. Short duration trigger arcs as well as long duration sustained arcs were generated. Typical current and voltage waveforms associated with the arc events are presented. Arc thresholds are also defined in terms of voltage, current and power. The data will be used to propose a new, high-voltage (greater than 300 V) solar array design for which the likelihood of damage from arcing is minimal.

Schneider, Todd↗
NASA NTRS1982

Voltage reapplication rate control for commutation of thyristors

A circuit for commutating a thyristor (21) by shunting its current for a minimum interval, thereby removing sustaining voltage to said thyristor, then subsequently restoring voltage to said thyristor at a predetermined rate, utilizes a series combination of a commutation electronic switch (22) and an isolated dc voltage supply (23) connected in parallel with the thyristor. The voltage supply is arranged with a polarity that permits the current flowing through the thyristor in one direction to be bypassed through the series combination while the commutation switch is turned on and to reverse bias the thyristor when the commutation switch is fully on. A dv/dt control circuit (24) limits the rate of rise of voltage across the commutation switch (22) as it is turned off in response to a command input signal. The dv/dt control circuit is comprised of a constant current drive (31) and a capacitor (32) connected between the output terminal of the commutation switch and the control input terminal of the commutation switch. The thyristor may be a triac (40) with two commutation switches (42, 43), one for current of each polarity, or with a single commutation switch (55) and a bridge circuit (52-55) for selecting the polarity of the switch (56).

Rippel, Wally E.↗
NASA NTRS1993

Electrooptic polymer voltage sensor and method of manufacture thereof

An optical voltage sensor utilizing an electrooptic polymer is disclosed for application to electric power distribution systems. The sensor, which can be manufactured at low cost in accordance with a disclosed method, measures voltages across a greater range than prior art sensors. The electrooptic polymer, which replaces the optical crystal used in prior art sensors, is sandwiched directly between two high voltage electrodes. Voltage is measured by fiber optical means, and no voltage division is required. The sample of electrooptic polymer is fabricated in a special mold and later mounted in a sensor housing. Alternatively, mold and sensor housing may be identical. The sensor housing is made out of a machinable polymeric material and is equipped with two opposing optical windows. The optical windows are mounted in the bottom of machined holes in the wall of the mold. These holes provide for mounting of the polarizing optical components and for mounting of the fiber optic connectors. One connecting fiber is equipped with a light emitting diode as a light source. Another connecting fiber is equipped with a photodiode as a detector.

Gottsche, Allan↗
NASA NTRS2007

High-Voltage Power Supply With Fast Rise and Fall Times

A special-purpose high-voltage power supply can be electronically switched on and off with fast rise and fall times, respectively. The output potential is programmable from 20 to 1,250 V. An output current of 50 A can be sustained at 1,250 V. The power supply was designed specifically for electronically shuttering a microchannel plate in an x-ray detector that must operate with exposure times as short as 1 ms. The basic design of the power supply is also adaptable to other applications in which there are requirements for rapid slewing of high voltages. The power-supply circuitry (see figure) includes a preregulator, which is used to program the output at 1/30 of the desired output potential. After the desired voltage has been set, the outputs of a pulse width modulator (PWM) are enabled and used to amplify the preregulator output potential by 30. The amplification is achieved by use of two voltage doublers with a transformer that has two primary and two secondary windings. A resistor is used to limit the current by controlling the drive voltage of two field-effect transistors (FETs) during turn-on of the PWM. A pulse transformer is used to turn on four FETs to short-circuit four output capacitors when the outputs of the PWM have been disabled. The most notable aspects of the performance of the power supply are a rise time of only 80 s and a fall time of only 60 s at a load current of 50 A or less. Another notable aspect is that the application of a 0-to-5-V square wave to a shutdown pin of the PWM causes the production of a 0-to-1,250-V square wave at the output terminals.

Bearden, Douglas B.↗