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At least 91 records · Page 5

Cluster calculation of carbon monoxide on a Cu surface using the self-consistent-field-X-alpha-scattered-wave method

Two geometries of CO chemisorbed on a Cu(100) surface have been studied using the self-consistent-field-X-alpha-scattered-wave method. Both geometries assume the CO molecule is bonded to the Cu surface with the C end down; one geometry is in the fourfold-symmetric hole site and one is directly on top of a Cu atom. The calculated valence density of states for the fourfold-symmetry case gives a satisfactory interpretation of the two main peaks below the copper d band in the UV photoemission spectra (UPS). A third weaker peak of the UPS data can be correlated with a CO molecule adsorbed directly on top of a copper atom.

Yu, H. L.↗

Electron energy-loss spectra in molecular fluorine

Electron energy-loss spectra in molecular fluorine, for energy losses from 0 to 17.0 eV, have been taken at incident electron energies of 30, 50, and 90 eV and scattering angles from 5 to 140 deg. Features in the spectra above 11.5 eV energy loss agree well with the assignments recently made from optical spectroscopy. Excitations of many of the eleven repulsive valence excited electronic states are observed and their location correlates reasonably well with recent theoretical results. Several of these excitations have been observed for the first time and four features, for which there are no identifications, appear in the spectra.

Nishimura, H.↗

Study of some superconducting and magnetic materials on high T sub c oxide superconductors

On the basis of existing data it appears that the high-temperature superconductivity above 77 K reported here, occurs only in compound systems consisting of a phase other than the K2NiF4 phase. A narrow superconducting transition was obtained with T sub c0 = 98 K and T sub c1 = 94 K in Y-Ba-Cu-O (YBCO). Preliminary results indicate that YBCO is rather different from the layered LaBCO, LaSCO, and LaCCO. While electron-photon interaction cannot be absent from this compound system, nonconventional enhanced superconducting interactions due to interfaces, Resonating Valence Bond (RVB) states, or even a superconducting state beyond the BCS framework, may be required to account for the high T sub c in YBCO. It is believed that study of the possible subtle correlation between magnetism and superconductivity will definitely provide important insight into the superconducting mechanism in YBCO and other oxides.

Wu, M. K.↗

Optical luminescence spectroscopy as a probe of the surface mineralogy of Mars

Optical luminescence (OpL) spectroscopy is an attractive use of a visible-near-IR spectrometer on a Mars lander because mineral products of atmosphere-surface interactions on Mars will probably have characteristic OpL spectra. Optical luminescence spectra would be taken at night, when a spectrometer might otherwise sit idle. Also needed would be a source of exciting radiation, which could be shared with other experiments. Optical luminescence is emission of nonthermal optical photons (near-UV through near-IR) as a response to energy input. On absorption of energy, an atom (or ion) will enter an excited state. The favored decay of many such excited states involving valence-band electrons is emission of an optical photon. Optical luminescence spectra can be useful in determining mineralogy and mineral composition. Optical luminescence in crystals can arise from essential elements (or ions), trace-element substituents (activators), or defects. Common activators in salts of alkali and alkaline earth elements include Mn(2+)(VI), other transition metals, the rare earths, and the actinides. Trace substituents of other species can enhance or quench OpL (e.g., Pb(2+) vs. Fe(3+)). Optical luminescence can also arise from defects in crystal structures, including those caused by radiation and shock.

Treiman, A. H.↗

Molybdenum Valence in Basaltic Silicate Melts: Effects of Temperature and Pressure

The metal-silicate partitioning behavior of molybdenum has been used as a test for equilibrium core formation hypotheses [for example, 1-6]. However, current models that apply experimental data to equilibrium core-mantle differentiation infer the oxidation state of molybdenum from solubility data or from multivariable coefficients from metal-silicate partitioning data [1,3,7]. Molybdenum, a multi-valent element with a valence transition near the fO2 of interest for core formation (approx.IW-2) will be sensitive to changes in fO2 of the system and silicate melt structure. In a silicate melt, Mo can occur in either 4+ or 6+ valence state, and Mo(6+) can be either octahedrally or tetrahedrally coordinated. Here we present X-ray absorption near edge structure (XANES) measurements of Mo valence in basaltic run products at a range of P, T, and fO2 and further quantify the valence transition of Mo.

Danielson, L. R.↗

Molybdenum Valence in Basaltic Silicate Melts

The moderately siderophile element molybdenum has been used as an indicator in planetary differentiation processes, and is particularly relevant to core formation [for example, 1-6]. However, models that apply experimental data to an equilibrium differentiation scenario infer the oxidation state of molybdenum from solubility data or from multivariable coefficients from metal-silicate partitioning data [1,3,7]. Partitioning behavior of molybdenum, a multivalent element with a transition near the J02 of interest for core formation (~IW-2) will be sensitive to changes in JO2 of the system and silicate melt structure. In a silicate melt, Mo can occur in either 4+ or 6+ valence state, and Mo6+ can be either octahedrally or tetrahedrally coordinated. Here we present first XANES measurements of Mo valence in basaltic run products at a range of P, T, and JO2 and further quantify the valence transition of Mo.

Danielson, L. R.↗

Origin of the Bandgap Bowing in ZNSe(1-x)Te(x) Alloys

Photomodulated reflection and optical absorption spectroscopies were used to measure the composition and hydrostatic pressure dependencies of interband optical transitions in ZnSe(1-x)Te(x) alloys. On the Te-rich side, the bandgap reduction and the reduction in the pressure dependence of the bandgap are well explained by the band anticrossing interaction between the ZnTe conduction band states and the Se localized state located at 2.85 eV above the valence band top of ZnTe. On the Se-rich side, an interaction between the degenerate Gamma valence bands of ZnSe and the localized Te state located at 0.1 eV above the valence band top of ZnSe is proposed to generate the bandgap reduction and the rapid increase of the spin-orbit splitting with increasing Te concentration. A linear interpolation between these two models accounts for the composition and pressure dependencies of the bandgap in the entire composition range.

Walukiewicz, W.↗

Ab initio projected-unrestricted Hartree-Fock calculation of some potential energy curves for carbonyl fluoride

Some potential energy curves for CF2O were calculated using projected-unrestricted Hartree-Fock (PUHF) theory. The calculations employed a contracted (4s 3p) Gaussian-type atomic orbital basis set. Bound states were found for the X-tilde 1A1 and 1,3A2 states while the 1,3B1 and 1,3B2 states were repulsive in the valence representation. The merits of the PUHF treatment for excited states are discussed. The results are discussed in terms of available experimental information and previous calculations with particular emphasis on the question of the photolysis channels open in the solar spectral region.

Brewer, D. A.↗

New heterojunction LWIR detector options

Researchers investigate the heterojunction internal photoemission (HIP) approach that potentially offers long wavelength infrared (LWIR) photovoltaic detector performance (single pixel) that is competitive with the best of other approaches being considered. Most significantly, this approach offers a relatively simple device technology that promises producible and uniform FPA's. Researchers emphasize an exciting process based on intervalence band absorption. They investigate both III-V and Si-based heterojunctions grown by molecular beam epitaxy (MBE) in which the barrier can be tailored to the desired cutoff wavelength. In addition, MBE allows one to optimize the device structure with precise control of doping profiles and layer thicknesses, and perform band structure engineering by control of composition and heterojunction strain. Researchers also consider free carrier absorption in heterojunctions. Acceptable absorption coefficients can be achieved in very heavily n(exp +) doped semiconductor layers (approx. equals 10(exp 20)cm(exp -3). However, in this case the appreciable filling of conduction band states leads to a Schottky-like photoresponse with a gradual (quadratic) turn-on above threshold. A more satisfactory approach would be to use p(exp +) doping so that with the higher density of states in the heavy hole valence band there would be a narrow band of occupied states. This gives the desirable effect of a more rapid (linear) turn-on above threshold. Unfortunately, the higher hole effective mass also reduces (inversely) the free carrier absorption. For this and other reasons, the intervalence band absorption process looks much more promising.

Maserjian, Joseph↗

A theoretical study of the low-lying states of Ti2 and Zr2

The low-lying states of Ti2 and the valence isoelectronic Zr2 are examined theoretically by means of a multireference configuration-interaction (MRCI) method. MRCI calculations demonstrate that two of the Zr2 states are very low-lying and that the resulting vertical excitation is consistent with the optical spectrum of Zr2. The ground state is predicted for Ti2 on the basis of valence correlation with the MRCI method and the average coupled-pair functional technique. Calculations of the inner-shell correlation effects are estimated and found to lower the 3Delta g state to a ground state, and another to a very low-lying state. The ground state of Ti2 is assigned to 3Delta g since it is lower than the other state at all levels of correlation and is derived from the same atomic asymptote. This conclusion is supported by the lack of an electron-spin resonance signal but contradicts the absence of subcomponents on the Raman spectral lines.

Bauschlicher, Charles W., Jr.↗

An initio calculations on C2, Si2, and SiC

Full-configuration-interaction (FCI) calculations have been performed for the Z 1Sigma(g)(+), a 3Pi(u), and b 3Sigma(g)(-) states of C2 and the X 3Sigma(g)(-) and A 3Pi(u) states of Si2 in valence double-zeta plus polarization one-particle basis sets. By carrying out the CASSCF multireference singles plus doubles CI (MRCI) procedure in a very large Gaussian basis set and correcting for errors with the FCI, the triplet-triplet separation in C2 is reproduced to within 47/cm. Analogous calculations on Si2 definitively determine the ground state to be 3Sigma(g)(-); the 3Pi(u) state is only 440 + or - 100/cm higher in energy. For the SiC molecule, which has never been observed spectroscopically but is believed to be an important component in carbon stars and to be present in interstellar space, the A 3Sigma(-) state is nearly 4000/cm above the X 3Pi ground state.

Bauschlicher, Charles W., Jr.↗

Ab initio studies of low-lying 3Sigma(-), 3Pi, and 5Sigma(-) states of NH. I - Potential curves and dipole moment functions

Configuration interaction wave functions, potential energy curves, and dipole moment functions have been calculated for the four lowest 3Sigma(-) and the three lowest 3Pi states and 5Sigma(-) states of NH. The electronic wave functions were constructed to give a balanced description of valence-Rydberg interactions. Two repulsive states have been identified as important photodissociation pathways. Spectroscopic constants are presented for the bound states, and results are compared to other theoretical and experimental work. The possible predissociation of the A 3Pi state by the 1 5Sigma(-) state is discussed.

Goldfield, Evelyn M.↗

On the use of corresponding orbitals in the calculation of nonorthogonal transition moments

Full valence and first-order CI wave functions are invariant with respect to unitary transformations among the valence orbitals. We exploit this degree of freedom and show that by transforming the valence orbitals into a corresponding orbital basis, nonorthogonal transition moment calculations become an easily managed task. Sample full valence calculations on several states of O2(+) and OF are also presented.

Lengsfield, B. H., III↗

Study of the Auger line shape of polyethylene and diamond

The KVV Auger electron line shapes of carbon in polyethylene and diamond have been studied. The spectra were obtained in derivative form by electron beam excitation. They were treated by background subtraction, integration and deconvolution to produce the intrinsic Auger line shape. Electron energy loss spectra provided the response function in the deconvolution procedure. The line shape from polyethylene is compared with spectra from linear alkanes and with a previous spectrum of Kelber et al. Both spectra are compared with the self-convolution of their full valence band densities of states and of their p-projected densities. The experimental spectra could not be understood in terms of existing theories. This is so even when correlation effects are qualitatively taken into account account to the theories of Cini and Sawatzky and Lenselink.

Dayan, M.↗

The Convergence of the Coupled Cluster Approach for MgO

The X(exp 1)Sigma(+) state of MgO shows significant differences between the CCSD(T) and CCSDT results and even some significant differences between the CCSDT and CCSDTQ results. The CCSDT(Q) results for this state do not agree well with the CCSDTQ results, as has been found for other systems. Unlike the X state, the state, which is well described by a single configuration, shows much less dependence on level of correlation treatment. Despite the slow convergence of the valence treatment of the X state, the effect of core correlation converges rapidly with level of correlation treatment.

Bauschlicher, Charles W.↗

Improved characterization of the Si-SiO2 interface

Refined quasi-static and conductance methods, based on effectively thin composite insulating layers, low-carrier-concentration bulk semiconductors, and low-level illumination, have been applied to an improved characterization of the (100) Si-SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (10-billion to 100-trillion states/eV sq cm) on a single sample. The normal U-shaped density of states is resolved into separate valence- and conduction-band-derived contributions as well as impurity-derived contributions corresponding to concentrations on the order of 20 ppm at the interface.

Su, P.↗

Trap controlled minority-carrier mobility in heavily doped silicon

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (about 10 to the 20th per cu cm) Si(Si:As) was investigated in the temperature range, 20 - 350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed behavior. The activation energy is about 10 meV, which suggests that the localized states originate from band tails but does not rule out trapping at boron atoms in the compensated n(+) region.

Neugroschel, A.↗