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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

High-frequency high-voltage high-power DC-to-DC converters

The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.

Wilson, T. G.↗
NASA NTRS1983

High voltage design guide. Volume 4: Aircraft

This report supplies the theoretical background and design techniques needed by an engineer who is designing electrical insulation for high-voltage, high-power components, equipment, and systems for aircraft. A literature survey and abundant bibliography identify references that provide further data on the subjects of partial discharges, corona, field theory and plotting, voids and processes for applying insulation. Both gaseous and solid insulations are treated. Cryogenic and liquid design notes are included. Tests and test equipment for high voltage insulation and equipment are defined. Requirements of test plans and procedures for high-voltage, high-power equipment are identified and illustrated by examples. Suggestions for high-voltage specifications are provided. Very few of the Military and Government specifications deal with system voltages above 10kV, thus most aircraft high-voltage specifications will have to be derived from the power industry specifications and standards produced by ASTM, IEEE, and NEMA.

W G Dunbar↗
NASA NTRS1985

Pulse-Width-to-Analog-Voltage Converter

Peak output voltage varies linearly with input-pulse duration. Circuit converts pulses of varying widths (as from sound-velocity instrumentation or tachometers) into analog voltages. Peak voltage increases in proportion to pulse width. Voltage used to drive an x-y plotter or storage oscilloscope. Pulse-width-to-voltage converter has peak output voltage that varies with duration of input pulses.

Sosack, G. S.↗
NASA NTRS1990

Voltage-Boosting Driver For Switching Regulator

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

Trump, Ronald C.↗
NASA NTRS1992

Laboratory study of the temporal evolution of the current-voltage characteristic of a probe in the wake of an object immersed in a pulsed flowing plasma

Measurements of the current-voltage characteristics of a Langmuir probe in the near wake of a disk immersed in a pulsed flowing plasma were made. A 1 cm diameter biasable sphere was placed in the ion-free near wake region of a 10 cm diameter disk immersed in a Mach 8 pulsed flowing plasma. The current-voltage characteristic of the sphere was observed as a function of time as the sphere bias was scanned from -5000 V to +1000 V. The collected current is found to be monotonically increasing with increasing positive bias voltage but exhibits a threshold voltage for current collection as the bias voltage becomes more negative. Potential measurements in the wake region were made for a sphere bias voltages below, at, and above the current collection threshold for a number of times during the wake formation period. The time evolution of the potential profile is shown to change as the sheath around the biased sphere is established. Predictions from the particle trajectory code SIMION are compared with data, showing excellent agreement in the prediction of the current collection threshold.

Meassick, S.↗
NASA NTRS1995

Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual-use applications can include battery chargers and remote power supplies for consumer electronics products such as portable telephones/beepers, portable radios, CD players, dashboard radar detectors, remote walkway lighting, etc.

Dinetta, L. C.↗
NASA NTRS1998

Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub-0.1 (micron)meter MOSFET's: A 3-D 'Atomistic' Simulation Study

A three-dimensional (3-D) "atomistic" simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 microns MOSFET's is presented. For the first time a systematic analysis of random dopant effects down to an individual dopant level was carried out in 3-D on a scale sufficient to provide quantitative statistical predictions. Efficient algorithms based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. The effects of various MOSFET design parameters, including the channel length and width, oxide thickness and channel doping, on the threshold voltage lowering and fluctuations are studied using typical samples of 200 atomistically different MOSFET's. The atomistic results for the threshold voltage fluctuations were compared with two analytical models based on dopant number fluctuations. Although the analytical models predict the general trends in the threshold voltage fluctuations, they fail to describe quantitatively the magnitude of the fluctuations. The distribution of the atomistically calculated threshold voltage and its correlation with the number of dopants in the channel of the MOSFET's was analyzed based on a sample of 2500 microscopically different devices. The detailed analysis shows that the threshold voltage fluctuations are determined not only by the fluctuation in the dopant number, but also in the dopant position.

Asenov, Asen↗
NASA NTRS1988

Effect of a longitudinally applied voltage upon the growth of Zea mays seedlings

The electrical parameters that affect young seedling growth were investigated. Voltages ranging from 5 to 40 volts were applied longitudinally along the mesocotyl region of 4-day old Zea mays L. (cv Silver Queen) seedlings for periods of 3 or 4 hours. It was determined that: (a) making the tips of the seedlings electrically positive relative to the base strongly inhibited shoot growth at 5 volts, whereas the reverse polarity had no effect; (b) at higher voltages, making the tip of the seedlings negative caused less growth inhibition than the reverse polarity at each voltage level; (c) the higher the applied voltage the greater the degree of inhibition; and, (d) the more growth inhibition experienced by the plants the poorer, and slower, their recovery. Previous observations of a relationship between the amount of free indole-3-acetic acid in the mesocotyl cortex and the growth rate of the mesocotyl and of gravitropism-induced movement of labeled indole-3-acetic acid from the seed to the shoot lead to the prediction of a voltage-dependent gating of the movement of indole-3-acetic acid from the stele to the cortex. This provided the basis for attempting to alter the growth rate of seedlings by means of an applied voltage.

NASA Program Space Biology↗
NASA NTRS2006

Single Event Transients in Voltage Regulators for FPGA Power Supply Applications

As with other bipolar analog devices, voltage regulators are known to be sensitive to single event transients (SET). In typical applications, large output capacitors are used to provide noise immunity. Therefore, since SET amplitude and duration are generally small, they are often of secondary importance due to this capacitance filtering. In low voltage applications, however, even small SET are a concern. Over-voltages may cause destructive conditions. Under-voltages may cause functional interrupts and may also trigger electrical latchup conditions. In addition, internal protection circuits which are affected by load as well as internal thermal effects can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. In the case of FPGA power supplies applications, SETS are critical. For example, in the case of Actel FPGA RTAX family, core power supply voltage is 1.5V. Manufacturer specifies an absolute maximum rating of 1.6V and recommended operating conditions between 1.425V and 1.575V. Therefore, according to the manufacturer, any transient of amplitude greater than 75 mV can disrupt normal circuit functions, and overvoltages greater than 100 mV may damage the FPGA. We tested five low dropout voltage regulators for SET sensitivity under a large range of circuit application conditions.

Poivey, Christian↗
NASA NTRS1993

Circuit and method for producing a flexible reference voltage

A flexible reference voltage circuit includes a circuit for producing a first digital signal representative of a range of reference voltage levels; a circuit for producing a second digital signal representative of a selected reference voltage level within the range of reference voltage levels; an adder for adding the first and second digital signals to produce a third digital signal; and a digital to analog converter for providing an output voltage in response to the third digital signal. The method of producing a flexible reference voltage performed by the circuit is also claimed. The invention can be used with a differential protection circuit to provide a series of trip level ranges, with a series of selectable trip levels in each range. This is accomplished in a high accuracy circuit which is relatively simple to construct, thereby minimizing size and complexity of the current sensor module, in differential protection applications, or the circuitry, if used in a power system controller. Standard digital logic components can be used to perform the necessary range/level decoding.

Thornton, Roger D.↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

Power↗
NASA NTRS2015

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources - a nominal 300-Volt high voltage input bus and a nominal 28-Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power supplies that provide power to the thruster auxiliary supplies, and two parallel 7.5 kilowatt power supplies that are capable of providing up to 15 kilowatts of total power at 300-Volts to 500-Volts to the thruster discharge supply. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall Effect Thruster. The performance of unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate the exceptional performance with full power efficiencies exceeding 97. With a space-qualified silicon carbide or similar high voltage, high efficiency power device, this design could evolve into a flight design for future missions that require high power electric propulsion systems.

Technology↗
NASA NTRS2017

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Petrick, David J.↗
DOE OSTI2025

A Convolution Neural Network for Voltage Event Classification at a Photovoltaic Inverter

This paper presents a convolutional neural network (CNN) developed to identify voltage events in photovoltaic (PV) inverters. The CNN is trained on synthetic data generated using the IEEE 13-bus distribution feeder model and evaluated on field measured data collected from Energy Northwest’s Horn Rapids Solar, Storage, and Training (HRSST) facility. The study focuses on two common voltage events: faults and voltage sags. The CNN is configured to analyze voltage and current waveforms from three-phase PV systems, demonstrating excellent accuracy during training. Field data from the HRSST facility is employed to assess its real-world performance, where the CNN achieves perfect identification of faults and voltage sags in a sample of nine events. This work highlights the potential of the proposed method to enhance PV protection schemes, providing a robust foundation for improved voltage event detection and grid reliability.

Cornachione, Matthew A.↗
DOE OSTI2025

Per-Phase Control for CHB Converters with Negative-Sequence Current and DC Voltage Balancing Control

This paper presents a per-phase controller for a grid-connected Cascaded H-Bridge (CHB) converter featuring negative sequence current regulation and DC bus voltage balancing capabilities. Unlike conventional three-phase controllers, each phase of the CHB can be separately and controlled to regulate the DC voltage and reactive power flow. per-phase negative sequence current control strategy is incorporated into the proposed controller to ensure compliance with IEEE Standard 2800-2022, which requires the absorption of negative-sequence reactive current during grid voltage disturbances. Furthermore, a feed-forward control-based DC bus voltage balancing method is employed, which eliminates the need for the integrator commonly used in traditional approaches. The performance of the proposed controller is validated under various unbalanced grid scenarios and DC bus voltage imbalances through electromagnetic transient (EMT) simulation using a three-phase, three-level grid-connected CHB–Dual Active Bridge (DAB) converter testbed developed on MATLAB/Simulink. Additionally, the performance of the negative-sequence current regulation is investigated through simulation under different unbalanced grid voltage scenarios.

negative sequence current↗
DOE OSTI2026

Limiter-aware adaptive excitation control for hydropower generators with legacy voltage regulation systems

Hydropower units often rely on legacy excitation systems with fixed automatic voltage regulator (AVR) settings, but parameter drift, changing operating conditions, and evolving grid-service demands can degrade terminal-voltage regulation over time. This problem should be addressed because poor voltage regulation affects reactive-power support, system stability, and reliable plant operation, and replacing installed AVR and limiter logic is costly and disruptive in practice. To address this issue, this paper proposes a retrofit-friendly enhancement for hydropower generator excitation systems that combines adaptive tuning of the AVR middle lead–lag branch with a small proportional-integral correction for removing steady bias and slow drift. The adaptive laws are normalized, projection-bounded, and equipped with leakage, while adaptation is enabled only in the middle branch. Thus, the intent of the underexcitation and overexcitation limiters, as well as legacy current and rate limits, remains unchanged. Stability is analyzed under incremental performance assumptions, yielding boundedness and asymptotic tracking in the absence of saturation. The method is evaluated using real operational data from a utility-scale hydropower unit at Rocky Reach Dam, Unit C-8. Compared with the fixed AVR baseline, the proposed method reduces terminal-voltage mean squared error by about 70%, removes long periods of steady-state bias, and improves transient tracking while coexisting with limiter actions. These results show that substantial voltage-control improvement can be achieved on existing hydropower units with minimal integration effort and without replacing the installed AVR structure.

ESST5B model↗
DOE OSTI2025

Physics-Informed Graph Neural Networks for Collaborative Dynamic Reconfiguration and Voltage Regulation in Unbalanced Distribution Systems

Network reconfiguration has long been employed as a strategic approach to minimize power distribution system losses and effectively regulate voltage levels. Tap-changing voltage regulators are also critical for controlling bus voltages, especially in accommodating the increasing integration of distributed energy resources (DERs) with intermittent outputs. This paper introduces novel methodologies to address the challenges of dynamic reconfiguration and optimal tap setting in unbalanced three-phase distribution systems. We propose an approximated mixed-integer quadratically constrained program (MIQCP) to model dynamic reconfiguration, along with a pioneering formulation for voltage regulator (VR) tap-setting based on Special Ordered Set type 1 (SOS1). To mitigate computational complexity, we propose a physics-informed spatial-temporal graph convolutional network (STGCN) with an integrated link classifier. The proposed approach enables efficient solution generation by fixing specific variables in the MIQCP instance and solving the simplified sub-MIP using an MIP solver. Numerical studies demonstrate the superior prediction accuracy of our STGCN model compared to baseline neural network models, resulting in reduced DER curtailment and voltage deviation with shorter computation time.

dynamic reconfiguration↗
DOE OSTI2026

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗