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At least 91 records · Page 5

Tunable doping of carbon nanotubes through engineered atomic layer deposition

A carbon nanotube field effect transistor (CNFET), that has a channel formed of carbon nanotubes (CNTs), includes a layered deposit of a nonstoichiometric doping oxide (NDO), such as HfOX, where the concentration of the NDO varies through the thickness of the layer(s). An n-type metal-oxide semiconductor (NMOS) CNFET made in this manner can achieve similar ON-current, OFF-current, and/or threshold voltage magnitudes to a corresponding p-type metal-oxide semiconductor (PMOS) CNFET. Such an NMOS and PMOS can be used to achieve a symmetric complementary metal-oxide semiconductor (CMOS) CNFET design.

Source record↗

Power Module Precursors and Prognostics

This project focuses on finding and utilizing electrical properties (precursors) of power electronic devices and modules whose changes have strong correlations with different modes and levels of degradations in order to realize online and lightweight state of health evaluation and fault diagnosis. Results from this project will contribute to higher safety, reliability, and power density of power electronic components. The approaches mainly include reviewing academic literature and industry practices for state of the art precursor identification and extraction, accelerated life cycles (ALC) of various power modules to create different degradations in-house, and developing techniques for gate-driver-integratable precursor detection circuit. In FY24, the results includes two sets of definitively detected aging precursors (on-state resistance and gate threshold voltage) for two sets of power modules respectively, controlled accelerated lifetime cycling of multiple silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) modules, and the development and validation of a gate voltage detection system.

ADVANCED PROPULSION SYSTEMS↗

DC Cryogenic Modeling of Open-Source SkyWater 130 nm MOSFETs at 77 K Using BSIM4

Cryogenic applications in high-energy physics (HEP) demand reliable, low-power CMOS electronics capable of operating at liquid nitrogen temperatures (77 K). The open-source SkyWater 130nm (SKY130) CMOS process has previously been shown to operate at temperatures as low as 4 K making it a promising candidate for HEP applications. In this work, we characterize and model SKY130 low-threshold voltage transistors at 77 K, which is a temperature commonly used in modeling applications for liquid argon detectors. DC characteristic measurements were performed at both room temperature and liquid nitrogen temperature. We created a cryogenic modeling approach to produce a SPICE-compatible, isothermal BSIM4-based model for select transistor sizes at 77 K. The resulting model agrees with data at 77 K with an average error on the order of 20% (relative RMS) and shows no dependence on drain voltage. Due to the open-source nature of SKY130, we have made our models publicly available on Github. We hope this work will continue the trend for democratizing circuit design at cryogenic temperatures in high-energy physics by enabling open access to accurate cryogenic CMOS device models at 77 K.

Beall, F. [Texas U., Arlington]↗

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge 0.945 Sn 0.055 /Si 0.03 Ge 0.93 Sn 0.04 and Ge 0.9 Sn 0.1 /Si 0.017 Ge 0.927 Sn 0.056 , show peak mobilities of 9000 and 19 000 cm 2 /Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

GeSn↗

Low Threshold, Long Wavelength Interband Cascade Lasers With High Voltage Efficiencies

Here, we report on the substantial advancement of long wavelength InAs-based interband cascade lasers (ICLs) utilizing advanced waveguides formed from hybrid cladding layers and targeting the 10-12 µm wavelength region. Modifications in the hole injector have improved carrier transport in these ICLs, resulting in significantly reduced threshold voltages (V th ) as low as 3.62 V at 80 K. Consequently, much higher voltage efficiencies were observed, peaking at about 73% at 10.3 µm and allowing for large output powers of more than 100 mW/facet. Also, low threshold current densities (J th ) of 8.8 A/cm 2 in cw mode and 7.6 A/cm 2 in pulsed mode near 10 µm were observed; a result of adjustments in the GaInSb hole well composition intended to reduce the overall strain accumulation in the ICL. Furthermore, an ICL from the second wafer operating at a longer wavelength achieved a peak voltage efficiency of 57% at 11.7 µm, with a peak output power of more than 27 mW/facet. This ICL went on to lase beyond 12 µm in both cw and pulsed modes, representing a new milestone in long wavelength coverage for ICLs with the standard W-QW active region.

47 OTHER INSTRUMENTATION↗

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

High frequency and high power are the driving forces behind semiconductor transistor technology. However, conventional devices have the tradeoff of either being high speed or high breakdown—but not both. Wafer-bonded current aperture vertical electron transistors (BAVETs) help eliminate the tradeoff by combining a high-speed III-As channel to a high-breakdown III-N drift region. The device presented herein comprises of an InAlAs gate-barrier/InGaAs channel, wafer-bonded to an InGaN/GaN drift region, with the InGaAs/InGaN interface referred to as the wafer-bonded interface (WBI). The electronic behavior of WBIs is yet less known but necessary in realizing the potential of a BAVET. Herein, strong trap activity at the WBI is shown to be the cause of abnormally high saturation voltage ( V DS_SAT ) in BAVETs. The traps cause unintentional space charge (SC) region in the drain region of the device. This causes a drain resistance, a higher ON-resistance ( R ON ), and a higher V DS_SAT . Here, the challenge is overcome by hydrogen passivation of traps at WBI by using a p-doping for the InAlAs layer, which reduces the trap-charge concentration at the WBI. Consequently, the width of the SC region is reduced and a reduction in V DS_SAT is demonstrated, wherein it reduces from >12 to 5 V.

36 MATERIALS SCIENCE↗

A Bulk-Capacitance Reduction Method Using Self-Driven Thyristor for AC-DC Converters

Universal serial bus power delivery (USB-PD) fast chargers equipped with wide-bandgap devices are driven to higher power density and efficiency. Furthermore, the indispensable high-voltage bulk capacitors used to smooth the rectifier output could take 40% of the total system volume due to the large capacitance value required. This paper discussed a capacitor reduction method using a self-driven thyristor scheme comprised of only three components in total. No extra control circuit is needed. Circuit analysis and design equations are presented, and the design results are implemented in a 60-W GaN-based active-clamp flyback converter. The measurement results on the prototype show a 36.4% reduction of the bulk-capacitor size with similar efficiency compared to the conventional solution.

30 DIRECT ENERGY CONVERSION↗

The Role of Pentaerythritol Tetranitrate (PETN) Aging in Determining Detonator Firing Characteristics

Pentaerythritol tetranitrate (PETN) is one of the most commonly used explosives for both military and mining applications. PETN is used in EBW (exploding bridge wire) and EFI (exploding foil initiator) detonator devices. Due the widespread usage of PETN, studies focusing on how the explosive changes with age, primarily its function in detonators has received particular interest. Aging studies have identified several factors that affect PETN detonator function over time, most notably the specific surface area of the explosive powder. Though small-scale studies have been performed on specific detonator systems with isolated batches of material, what is missing is a large statistically-significant study focusing on PETN aging characteristics - such as powder coarsening - and their influence on detonator performance. Herein we report the first large statistically viable PETN aging study focusing on four batches of PETN powder from the same stock of PETN using two stabilizers, polysaccharide and TriPEON. PETN was aged both as a free-flowing powder as well as in modified EBW RP-2 detonators, for one month at 75 °C. The PETN powder has been analyzed chemically using Fisher specific surface area analysis, SEM imaging and light scattering particle size analysis. Additionally the detonators were tested for performance through voltage-sweep threshold testing and function time measurements. Findings from the study indicate that aging at 75 °C for one month significantly changes the specific surface area and particle size of unstabilized PETN, leading to increases in detonator function time, but not detonator threshold values. Powders stabilized with TriPEON displayed less significant increases in function time, while powder stabilized with polysaccharide exhibited no aging effects, despite the high temperature aging.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗

Utilization of the CW magnetrons as coherent RF sources for superconducting RF accelerators

CW magnetrons designed and optimized for industrial heaters, driven by an injection-locking signal, were suggested to power Superconducting RF (SRF) cavities. However, the CW magnetrons, which are regenerative generators, are intended to operate in self-excitation mode, so, for reliable starting they use a large regenerative gain, causing a large regenerative instability in operation. Thus, power supply ripple, even shot noise, etc., lead to multiple sidebands forming a quasi-continuous noise spectrum at the carrier frequency. Therefore, in the traditionally used mode of operation and control, such magnetrons are inapplicable for powering high Q-factor SRF cavities. A new approach to operation and control of CW magnetrons considering non-stationary processes during start-up and operation makes it possible to find a mode of almost coherent RF generation of tubes with a significant reduction in regenerative instability and noise and increased efficiency. In our work is presented substantiation for the newly developed mode with an analysis of the new approach based on experimental results. •In this article, for the first time, non-stationary, regenerative processes are considered during the start-up and operation of CW magnetrons for powering high-Q superconducting RF cavities.•An analytical study, confirmed by experiments, showed that the traditionally used modes of starting and operating CW magnetrons are not suitable for powering high-Q superconducting RF cavities.•In fact, to make CW magnetrons suitable for such cavities, the physics of starting and operating CW magnetrons must be changed. This has been demonstrated in our work.•In developing the Stimulated Coherent Generation Mode [NIM A 980 (2020) 164366], we have shown the suitability of this mode for starting and operating CW magnetrons for high-Q superconducting RF cavities.•Analytical analysis, verified experimentally, substantiates in our article the suitability of the “Mode of stimulated coherent generation” of CW magnetrons for powering high-Q superconducting cavities in pulsed and continuous modes.

43 PARTICLE ACCELERATORS↗

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗

Voltage-induced magnetic domain evolution in a phase-change material

Applying voltage to metal–insulator transition (MIT) materials allows electrical actuation of the local electronic phase state. In MIT systems that have the electronic order coupled with the magnetic order, voltage switching of the electronic phase state can also enable the electrical manipulation of magnetic properties. In this work, we utilized x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM) to investigate the control of magnetic domain configurations in ferromagnetic MIT electrical switches. For applied voltages above a threshold value, the XMCD-PEEM images show that the magnetic domains separate into two distinct regions: one with a high contrast (white/black), indicating well-defined micrometer-scale magnetic domains with a component of their magnetization aligned parallel/antiparallel to the x-ray helicity, and the other with different shades of intermediate contrast (gray). Significant changes in magnetic domain configurations upon voltage biasing were only observed in these gray regions. Furthermore, the voltage-induced magnetic domain separation was found to be bias polarity-dependent, with the gray regions expanding from the opposite sample edge when the applied voltage polarity was reversed. This polarity-dependent electrical control of magnetic domain configurations during the MIT switching opens alternative opportunities in memory applications for magnetic MIT switching materials.

42 ENGINEERING↗

The CMS Phase-2 Fast Beam Condition Monitor prototype test with beam

The Fast Beam Condition Monitor (FBCM) is a standalone luminometer for the High Luminosity LHC (HL-LHC) program of the CMS Experiment at CERN. The detector is under development and features a new, radiation-hard, front-end application-specific integrated circuit (ASIC) designed for beam monitoring applications. The achieved timing resolution of a few nanoseconds enables the measurement of both the luminosity and the beam-induced background. The ASIC, called FBCM23, features six channels with adjustable shaping times, enabling in-field fine-tuning. Each ASIC channel outputs a single binary asynchronous signal encoding time-of-arrival and time-over-threshold information. The FBCM is based on silicon-pad sensors, with two sensor designs presently being considered. This paper presents the results of tests of the FBCM detector prototype using both types of silicon sensors with hadron, muon, and electron beams. Irradiated FBCM23 ASICs and silicon-pad sensors were also tested to simulate the expected conditions near the end of the detector's lifetime in the HL-LHC radiation environment. Based on test results, direct bonding between the sensor and ASIC was chosen, and an optimal bias voltage and ASIC threshold for FBCM operation were proposed. The current design of the front-end test board was validated following the beam test and is now being used for the first front-end module, which is expected to be produced in summer 2025. These results represent a major step forward in validating the FBCM concept, first version of the firmware and establishing a reliable design path for the final detector.

Beam-line instrumentation (beam position and profi↗

On forced RF generation of CW magnetrons for accelerators

CW magnetrons, initially developed for industrial RF heaters, were suggested to power RF cavities of superconducting accelerators due to their higher efficiency and lower cost than traditionally used klystrons, IOTs or solid-state amplifiers. RF amplifiers driven by a master oscillator serve as coherent RF sources. CW magnetrons are regenerative RF generators with a huge regenerative gain. This causes regenerative instability with a quite large noise when a magnetron operates with the anode voltage above the threshold of self-excitation. Traditionally, an injection locking by a small signal is used for stabilization of magnetrons. In this case CW magnetrons with the injection-locked oscillations generate a high level of noise. This may preclude use of standard CW magnetrons in this operating mode in the Superconducting RF (SRF) accelerators. In this article we described a method developed for forced RF generation of CW magnetrons when the magnetron startup is provided by the injected forcing signal and the regenerative noise is suppressed. The method is most suitable for powering high Q-factor cavities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

On Forced RF Generation of CW Magnetrons for SRF Accelerators

CW magnetrons, initially developed for industrial RF heaters, were suggested to power RF cavities of superconducting accelerators due to their higher efficiency and lower cost than traditionally used klystrons, IOTs or solid-state amplifiers. RF amplifiers driven by a master oscillator serve as coherent RF sources. CW magnetrons are regenerative RF generators with a huge regenerative gain. This causes regenerative instability with a large noise when a magnetron operates with the anode voltage above the threshold of self-excitation. Traditionally for stabilization of magnetrons is used injection locking by a quite small signal. Then the magnetron except the injection locked oscillations may generate noise. This may preclude use of standard CW magnetrons in some SRF accelerators. Recently we developed briefly described below a mode for forced RF generation of CW magnetrons when the magnetron startup is provided by the injected forcing signal and the regenerative noise is suppressed. The mode is most suitable for powering high Q-factor SRF cavities.

43 PARTICLE ACCELERATORS↗

On forced RF generation of CW magnetrons for SRF accelerators

CW magnetrons, initially developed for industrial RF heaters, were suggested to power RF cavities of superconducting accelerators due to their higher efficiency and lower cost of RF power per Watt than used traditionally klystrons, IOTs or solid-state amplifiers. RF amplifiers driven by a master oscillator serve as coherent RF sources. CW magnetrons are regenerative RF generators with a huge regenerative gain to start up reliably with self-excitation even if the tube is powered by a DC power supply. This causes regenerative instability with a large noise when a magnetron operates with the anode voltage above the threshold of self-excitation. Traditionally for stabilization of magnetrons is used injection locking by a signal PLock ≤ -20 dB or less then of the magnetron power PMag. Then the magnetron generates the injection locked oscillations and generates noise. This may preclude use of standard CW magnetrons in some SRF accelerators. We developed briefly described below a mode for forced coherent RF generation of CW magnetrons when the magnetron startup is provided by the injected forcing signal and the regenerative noise is suppressed. The mode is most suitable for powering high Q-factor SRF cavities.

Kazakevich, G.↗

Passive Islanding Detection of Inverter-Based Resources in a Noisy Environment

Islanding occurs when a load is energized solely by local generators and can result in frequency and voltage instability, changes in current, and poor power quality. Poor power quality can interrupt industrial operations, damage sensitive electrical equipment, and induce outages upon the resynchronization of the island with the grid. This study proposes an islanding detection method employing a Duffing oscillator to analyze voltage fluctuations at the point of common coupling (PCC) under a high-noise environment. Unlike existing methods, which overlook the noise effect, this paper mitigates noise impact on islanding detection. Power system noise in PCC measurements arises from switching transients, harmonics, grounding issues, voltage sags and swells, electromagnetic interference, and power quality issues that affect islanding detection. Transient events like lightning-induced traveling waves to the PCC can also introduce noise levels exceeding the voltage amplitude by more than seven times, thus disturbing conventional detection techniques. The noise interferes with measurements and increases the nondetection zone (NDZ), causing failed or delayed islanding detection. The Duffing oscillator nonlinear dynamics enable detection capabilities at a high noise level. The proposed method is designed to detect the PCC voltage fluctuations based on the IEEE standard 1547 through the Duffing oscillator. For the voltages beyond the threshold, the Duffing oscillator phase trajectory changes from periodic to chaotic mode and sends an islanded operation command to the inverter. The proposed islanding detection method distinguishes switching transients and faults from an islanded operation. Experimental validation of the method is conducted using a 3.6 kW PV setup.

Energy & Fuels↗

On operation and control of CW magnetrons for superconducting accelerators

CW magnetrons, developed for industrial RF heaters, were suggested to feed RF cavities of superconducting accelerators due to higher efficiency and lower cost of RF power than provide traditionally used klystrons, IOTs or solid-state amplifiers. RF amplifiers driven by a master oscillator serve as coherent RF sources. CW magnetrons are regenerative RF auto generators with a huge regenerative gain. This causes regenerative instability with a notable noise when a magnetron operates as an auto generator i.e., with the anode voltage above the threshold of self-excitation. Traditionally, an injection locking by a small signal is used for phase stabilization of magnetrons. In this case CW magnetrons with the injection-locked (coherent) oscillations generate a notable level of noise. This may preclude use of CW magnetrons in this mode in the Superconducting RF (SRF) accelerators. This paper reviews PIC modeling and previously obtained experimental results for the operation and control of CW magnetrons, which led to the development of techniques most suitable for various SRF accelerators using forced RF oscillation of magnetrons, when the magnetron is launched by an injected forcing signal, and regenerative noise is suppressed.

Kazakevich, G. [MUONS Inc., Batavia] (ORCID:000000↗

Preparing Distribution Utilities for Utility-Scale Storage and Electric Vehicles: A Novel Analytical Framework

Emerging distributed energy resources (DERs)—such as solar photovoltaics (PV), battery energy storage systems (BESS), and electric vehicles (EVs)—are expected to increase substantially in India in the coming years following policy-driven targets of the Government of India to modernize its electricity system, reduce greenhouse gas emissions (GHGs), and improve air quality. These emerging technologies can pose challenges to distribution utilities, forcing overhauls in planning and operational practices. They can also create challenges in power system infrastructure planning and cause more frequent system operational violations (e.g., network voltage bounds and loading thresholds) if not properly integrated. The impacts on the localized power distribution grid from these emerging technologies manifest in increased infrastructure investments and erratic shifts in demand patterns. These impacts are not yet well understood, and analytic solutions are not readily available. To address these challenges, the National Renewable Energy Laboratory (NREL), in collaboration with BSES Rajdhani Power Ltd. (BRPL), developed an advanced power distribution system impact analysis framework of BRPL’s distribution system. This framework helps analyze the readiness of the power distribution network to accommodate emerging technologies and the potential opportunities they might introduce. The framework has been predominantly set up to evaluate distributed PV, BESS, and EVs. In this collaboration between NREL and BRPL, we developed and evaluated the framework on two distribution feeders in the BRPL territory for various scenarios of BESS and EVs. BESS are evaluated for their effectiveness on the grid to mitigate present and future feeder overloading scenarios, and they are subsequently analyzed for their costs compared to the costs of traditional upgradation measures. Scenarios include assessing the effects of EV density on grid infrastructure upgrades and interlinking EV management with BESS integration.

24 POWER TRANSMISSION AND DISTRIBUTION↗