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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Control of Thickness and Chemical Properties of Atomic Layer Deposition Overcoats for Stabilizing Cu/γ-Al 2 O 3 Catalysts

Whereas sintering and leaching of copper nanoparticles during liquid-phase catalytic processing can be prevented by using atomic layer deposition (ALD) to overcoat the nanoparticles with AlOx, this acidic overcoat leads to reversible deactivation of the catalyst by resinification and blocking of the pores within the overcoat during hydrogenation of furfural. We demonstrate that decreasing the overcoat thickness from 45 to 5 ALD cycles is an effective method to increase the rate per gram of catalyst and to decrease the rate of deactivation for catalysts pretreated at 673 K, and a fully regenerable copper catalyst can be produced with only five ALD cycles of AlOx. Moreover, although an overcoat of MgOx does not lead to stabilization of copper nanoparticles against sintering and leaching during liquid-phase hydrogenation reactions, the AlOx overcoat can be chemically modified to decrease acidity and deactivation through the addition of MgOx, while maintaining stability of the copper nanoparticles.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Thick Layered Semiconductor Devices with Water Top-Gates: High On–Off Ratio Field-Effect Transistors and Aqueous Sensors

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore deionized (DI) water as a solution top-gate for field-effect switching of layered semiconductors including SnS 2 , MoS 2 , and black phosphorus. The DI water gate is easily fabricated, can sustain rapid bias changes, and its efficient coupling to layered materials provides high on–off current ratios, near-ideal subthreshold swing, and enhanced short-channel behavior even for FETs with thick, bulk-like channels, where such control is difficult to realize with conventional back gating. Screening by the high-k solution gate eliminates hysteresis due to surface and interface trap states and substantially enhances the field-effect mobility. The onset of water electrolysis sets the ultimate limit to DI water gating at large negative gate bias. Measurements in this regime show promise for aqueous sensing, demonstrated here by the amperometric detection of glucose in aqueous solution. In conclusion, DI water gating of layered semiconductors can be harnessed in research on novel materials and devices, and it may with further development find broad applications in microelectronics and sensing.

36 MATERIALS SCIENCE↗
NASA NTRS1960

Tests of Aerodynamically Heated Multiweb Wing Structures in a Free Jet at Mach Number 2: Five Aluminum-Alloy Models of 20-Inch Chord with 0.064-Inch-Thick Skin, 0.025-Inch-Thick Webs, and Various Chordwise Stiffening at 2 deg Angle of Attack

An experimental study was made on five 2024-T3 aluminum-alloy multiweb wing structures (MW-2-(4), MW-4-(3), mw-16, MW-17, and MW-18), at a Mach number of 2 and an angle of attack of 2 deg under simulated supersonic flight conditions. These models, of 20-inch chord and semi-span and 5-percent-thick circular-arc airfoil section, were identical except for the type and amount of chordwise stiffening. One model with no chordwise ribs between root and tip bulkhead fluttered and failed dynamically partway through its test. Another model with no chordwise ribs (and a thinner tip bulkhead) experienced a static bending type of failure while undergoing flutter. The three remaining models with one, two, or three chordwise ribs survived their tests. The test results indicate that the chordwise shear rigidity imparted to the models by the addition of even one chordwise rib precludes flutter and subsequent failure under the imposed test conditions. This paper presents temperature and strain data obtained from the tests and discusses the behavior of the models.

Trussell, Donald H.↗