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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum Capacitors

Replacement of MnO2 with conductive polymers as cathode materials in chip tantalum capacitors allows for a substantial reduction of the equivalent series resistance (ESR), improvement of frequency characteristics, and elimination of the possibility of ignition during failures. One of the drawbacks of chip polymer tantalum capacitors (CPTCs) is a relatively poor long-term stability at high temperatures. In this work, variations of capacitance, dissipation factor, and ESR in different types of capacitors including automotive grade parts from three manufacturers have been monitored during storage at temperatures from 100 ºC to 175 ºC for up to 18,000 hours. Results show that ESR is the most and capacitance the least sensitive to degradation parameter. Times to parametric failures have been simulated using a Weibull-Arrhenius model that allowed for assessments of activation energies of the degradation and prediction of times to failure at the use temperature. Degradation of CPTCs was explained by thermo-oxidative processes in conductive polymers that result in exponential increasing of the resistivity with time of ageing. This process starts after a certain incubation period that depends on packaging materials and design and corresponds to the time that is necessary to form delamination between the encapsulating molding compound and lead frame. The effectiveness of the existing qualification procedures to assure stable operation of CPTCs is discussed.

Aging↗
NASA NTRS2021

Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum Capacitors

Replacement of MnO2 with conductive polymers as cathode materials in chip tantalum capacitors allows for a substantial reduction of the equivalent series resistance (ESR), improvement of frequency characteristics, and elimination of the possibility of ignition during failures. One of the drawbacks of chip polymer tantalum capacitors (CPTCs) is a relatively poor long-term stability at high temperatures. In this work, variations of capacitance, dissipation factor, and ESR in different types of capacitors including automotive grade parts from three manufacturers have been monitored during storage at temperatures from 100 ºC to 175 ºC for up to 18,000 hours. Results show that ESR is the most and capacitance the least sensitive parameter to degradation. Times to parametric failures have been simulated using a Weibull-Arrhenius model that allowed for assessments of activation energies of the degradation and prediction of times to failure at the use temperature. Degradation of CPTCs was explained by thermo-oxidative processes in conductive polymers that result in exponential increase of the resistivity with time of aging. This process starts after a certain incubation period that depends on packaging materials and design and corresponds to the time that is necessary to form delamination between the encapsulating molding compound and lead frame. The effectiveness of the existing qualification procedures to assure stable operation of CPTCs is discussed.

high temperature storage (HTS)↗
NASA NTRSDate not supplied

Infant Mortality and Wear-Out Failures in Polymer and MnO2 Tantalum Capacitors

Reliability testing of modern tantalum capacitors shows the presence of both types, infant mortality (IM) and wearout (WO) failures. To assure reliable operation, the probability of IM failures should be reduced to below the specified level, and the time of WO inception should be greater than the required useful life of the parts at operation conditions. In this work, several types of MnO2 and polymer cathode tantalum capacitors have been tested at highly accelerated conditions to assess voltage acceleration factors, determine adequate burn-in conditions, and assess the useful life. A modified time dependent dielectric breakdown (TDDB) model has been suggested to explain both types of failure, and a physical mechanism of degradation that is based on migration and reactions of oxygen vacancies explains increase of the defect related, IM failures with the level of stress.

tantalum capacitors↗
NASA NTRS2023

Guidelines for Screening, Lot Acceptance, and Derating for Polymer Tantalum Capacitors

These guidelines have been developed for NASA space projects that are planning to use new technology hermetic and chip polymer cathode tantalum capacitors. Polymer Tantalum Capacitors (PTC) selected from MIL-PRF-32700, automotive grade (AEC-Q200) parts, or COTS+ (hi-rel COTS) capacitors should be screened and qualified as suggested in Tables 1-3 and derated per section 9 below. Screening and lot acceptance tests that were carried out for a lot that is intended for flight as a part of the manufacturing process do not need to be repeated

tantalum capacitors↗
DOE OSTI2020

Effect of lithium incorporation on tweaking the electrocatalytic behavior of tantalum-based oxides

To study the effect of lithium incorporation on the electrochemical properties and catalytic behavior of tantalum-based oxides, a series of mesoporous lithium-contained tantalum oxides was developed adopting an inverse micelle-based sol gel synthesis method. Four various phases of amorphous Ta 2 O 5 , polycrystalline LiTaO 3 , Li 5.04 Ta 6.16 O 17.92 , and Li 3 TaO 4 were determined for samples synthesized at Li/Ta ratios of 0.5 (LTO-0.5), 1 (LTO-1), 2 (LTO-2), and 3 (LTO-3) respectively. The surface analysis revealed that LTO-2 sample is featured with lower amount of lithium atoms at the surface rather than the bulk of the sample. The electrochemical analysis of LTO samples showed that LTO-2 possesses lower charge transfer resistance extracted from impedance spectroscopy that consequently leads to a better electrocatalytic performance. The LTO-2 electrode also showed a low open circuit potential (OCP) combined with a relatively higher electroactive surface area, thus capable of running an electrooxidation reaction at a potential lower than all other LTO samples. The more negative OCP value of LTO-2 electrode in AA solution states a more facile electron transfer between the analyte and electrode compared to other synthesized samples. Mott–Schottky plots of LTO electrodes are characterized by positive slopes which indicate n-type semiconductor behavior. The charge carrier density (5.5 × 10 19 cm -3 ) in LTO-2 sample is the lowest among all other samples. The charge carrier density is dependent on the amount of applied lithium in the synthesis confirming various lithium diffusion behaviors in LTO samples. The lower carrier concentration in LTO-2 justifies its higher activity in electrooxidation providing less populated lower unoccupied molecular orbital (LUMO) for the accommodation of electrons extracted from the analyte higher occupied molecular orbital (HOMO). Therefore, LTO-2 showed an improved electrocatalytic performance due to lower charge transfer resistance (higher conductivity) offered by lower amount of lithium atom at its surface and higher oxygen vacancies in the bulk.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Strength of tantalum to 276 GPa determined by two x-ray diffraction techniques using diamond anvil cells

Tantalum (Ta) is a metal that has useful properties that make it useful in extreme environments. It is therefore important to understand how Ta performs in such extreme conditions by accurately measuring its properties. In this work, the yield strength of tantalum has been measured at pressures up to 276 GPa using axial and radial x-ray diffraction (XRD) methods in diamond anvil cells (DAC). We measured strength using XRD in a radial DAC to 50 GPa, in an axial DAC to 60 GPa using diamonds with standard flat culets, and in a final experiment to 276 GPa using toroidal diamond anvils. The radial XRD data were refined using the Material Analysis Using Diffraction (MAUD) Rietveld software package to extract lattice strain and the yield strength. The axial data were refined using the General Structure Analysis System (GSAS) II and a linewidth method was used to calculate the yield strength. The yield strength measured near ambient pressure was found to be 0.5 GPa and increased with pressure up to 50 GPa, where the yield strength plateaued at a value of 2.4 GPa. At pressures above 60 GPa, the strength increased again to a maximum value of 9 GPa at the highest pressure of 276 GPa. Here, the data from the three experiments show good agreement between the methods and previously reported experimental data. This agreement illustrates the value of axial diffraction data for material strength determination and allows for measurements at multihundreds of GPa using toroidal DACs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Shock state distributions in porous tantalum and characterization with multipoint velocimetry

Heterogenous materials under shock compression can be expected to reach different shock states throughout the material according to local differences in microstructure and the history of wave propagation. Here, in this work, a compact, multiple-beam focusing optic assembly is used with high-speed velocimetry to interrogate the shock response of porous tantalum films prepared through thermal-spray deposition. The distribution of particle velocities across a shocked interface is compared to results obtained using a set of defocused interferometric beams that sampled the shock response over larger areas. The two methods produced velocity distributions along the shock plateau with the same mean, while a larger variance was measured with narrower beams. The finding was replicated using three-dimensional, mesoscopically resolved hydrodynamics simulations of solid tantalum with a pore structure mimicking statistical attributes of the material and accounting for radial divergence of the beams, with agreement across several impact velocities. Accounting for pore morphology in the simulations was found to be necessary for replicating the rise time of the shock plateau. The validated simulations were then used to show that while the average velocity along the shock plateau could be determined accurately with only a few interferometric beams, accurately determining the width of the velocity distribution, which here was approximately Gaussian, required a beam dimension much smaller than the spatial correlation lengthscale of the velocity field, here by a factor of ∼30×, with implications for the study of other porous materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Low-Frequency Correlated Charge-Noise Measurements Across Multiple Energy Transitions in a Tantalum Transmon

Transmon qubits fabricated with tantalum metal have been shown to possess energy relaxation times greater than 400 𝜇⁢s and, as such, present an attractive platform for high precision, correlated noise studies across multiple higher-energy transitions. Tracking the multilevel fluctuating qudit frequencies with a precision enabled by the high coherence of the device allows us to extract the charge offset and quasiparticle dynamics. We observe qualitatively different charge-offset behavior in the tantalum device than those measured in previous low-frequency charge-noise studies. In particular, we find the charge-offset dynamics are dominated by rare, discrete jumps between a finite number of quasistationary charge configurations, a previously unobserved charge-noise process in superconducting qubits.

3-dimensional systems↗
DOE OSTI2026

Temperature-dependent dielectric function of tantalum nitride formed by atomic layer deposition for tunnel barriers in Josephson junctions

Here, we report the dielectric functions of insulating tantalum nitride (TaN) films deposited by atomic layer deposition (ALD) on 300 mm Si/SiO 2 substrates to evaluate their suitability as tunnel barriers in tantalum-based Josephson junctions (JJs) for superconducting quantum circuits. Temperature-dependent ellipsometric angles were measured for ALD TaN films with nominal thicknesses of 13 and 25 nm at an incidence angle of 70°, over photon energy ranges of 0.03–0.7 eV (80–300 K) and 0.5–6.5 eV (80–600 K). These data were used to develop a dispersion model for insulating ALD TaN that incorporates a Tauc–Lorentz oscillator with an optical bandgap of 1.5–1.8 eV to describe interband transitions. The extracted dielectric function shows insulating behavior (mid-infrared transparency) at all temperatures and for both film thicknesses tested. In particular, ALD TaN does not exhibit infrared absorption due to free carriers, even at elevated temperatures, consistent with the insulating behavior required for a JJ tunnel barrier. Results from transmission electron microscopy (including selected area electron diffraction) and x-ray diffraction are also discussed. Sputter depth-profile x-ray photoelectron spectroscopy shows an N/Ta ratio of ∼1.2 throughout the film. The lower bandgap, low roughness, and thermal stability of ALD TaN compared to AlO x suggest the possibility of fabricating JJs with thicker barriers while achieving critical current densities required for qubits, enabling improved thickness and composition control, reduced topography, and resistance to aging.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Fabrication of Tantalum and Hafnium Carbide Fibers via Forcespinning TM for Ultrahigh‐Temperature Applications

In this work, a novel method for producing ultrafine tantalum and hafnium carbide fibers using the Forcespinning TM technique via a nonhalide‐based sol‐gel process was investigated. An optimal solution viscosity range was systematically determined via rheological studies of neat PAN/DMF as a function of fiber formation. Subsequently, Forcespinning TM parameters were also systemically studied to determine the optimal rotational velocity and spinneret‐to‐collecting rod distance required for ideal fiber formation. TaC and HfC fibers were synthesized via Forcespinning TM utilizing a mixture of PAN and refractory transition metal alkoxides (i.e., tantalum (V) ethoxide and hafnium (IV) tert‐butoxide) in DMF solution based on optimal conditions determined from the neat PAN/DMF. In all instances after calcination, powder X‐ray diffraction (PXRD) and energy dispersive spectroscopy (EDS) indicated that TaC and HfC fibers were produced. TGA/DSC confirmed the chemical stability of the resulting fibers.

Lee, Harold O.↗
DOE OSTI2023

Pinwheel Experiment Tantalum Shot 1 Pre-Shot Report

The purpose of this experimental series is to validate the reactive burn model in the PAGOSA hydrodynamic code. It will also help validate the EOS and Strength models for the aluminum and tantalum cylinders. C4 high explosive (HE) is used to drive an aluminum cylinder into a tantalum sandwiched PBX‐9501. The experiment will provide time of arrival (TOA) data for the burn front in the HE through the metal cylinders using Fiber Bragg Gratings (FBG). Photon Doppler Velocimetry (PDV) will provide shock wave TOA and the velocity of the inward moving cylinder. The PAGOSA code will be used to predict TOA and cylinder wall velocity using PDV and tracers.

36 MATERIALS SCIENCE↗
NASA NTRS1968

Reaction studied of steam with niobium and tantalum

Study reveals the kinetics of niobium and tantalum with steam at elevated temperatures to determine the suitability of high melting metals for fabrication of equipment for temperature steam environments. Niobium obeyed linear kinetics from 1050 degrees to 1500 degrees C but tantalum followed a paralinear rate law.

Kilpatrick, M.↗
NASA NTRS1972

Iridium and tantalum foils for spaceflight neutron dosimetry.

Description of a two-foil system of iridium and tantalum which can measure thermal and intermediate energy neutrons at flux densities of 1 neutron/sq cm-sec over a ten-day lunar mission (1,000,000 neutrons/sq cm). The foils are chemically inert and nontoxic, weigh less than 1 g each, and require only routine gamma pulse height analysis for activation measurement. Detection of fluences below 1,000,000 neutrons/sq cm are achieved for counts of foil activity made as late as two months following neutron exposure. Tantalum foils flown in Apollo 11 indicated a mean dose equivalent to the astronauts of less than 16 mrem from thermal plus intermediate energy neutrons, while nuclear emulsion track analysis indicated approximately 17 mrem from neutrons of energy greater than 0.6 MeV. Iridium foils flown on Apollo 12 indicated dose equivalents of 1.8 to 2.8 mrem from thermal neutrons, excluding tissue thermalized SNAP-27 neutrons.

English, R. A.↗
NASA NTRS1974

Evaluation of wet tantalum capacitors after exposure to extended periods of ripple current, volume 1

The application of tantalum capacitors in the Viking Lander includes both dc voltage and ripple current electrical stress, high temperature during nonoperating times (sterilization), and high vibration and shock loads. The capacitors must survive these severe environments without any degradation if reliable performance is to be achieved. A test program was established to evaluate both wet-slug tantalum and wet-foil capacitors under conditions accurately duplicating actual Viking applications. Test results of the electrical performance characteristics during extended periods of ripple current, the characteristics of the internal silver migration as a function for extended periods of ripple current, and the existence of any memory characteristics are presented.

Watson, G. W.↗
NASA NTRS1975

High strength forgeable tantalum base alloy

Increasing tungsten content of tantalum base alloy to 12-15% level will improve high temperature creep properties of existing tantalum base alloys while retaining their excellent fabrication and welding characteristics.

Buckman, R. W., Jr.↗
NASA NTRS1974

Tantalum capacitor behavior under fast transient overvoltages

Tantalum capacitors were tested to determine failure time when subjected to short-duration, high-voltage surges caused by lightning strikes. Lightning is of concern to NASA because of possible damage to critical spacecraft circuits. The test was designed to determine the minimum time for tantalum capacitor failure and the amount of overvoltage a capacitor could survive, without permanent damage, in 100 microseconds. All tested exhibited good recovery from the transient one-shot pulses with no failure at any voltage, forward or reverse, in less than 25 microseconds.

Zill, J. A.↗
NASA NTRS1970

Development of advanced high strength tantalum base alloys. Part 2: Scale-up investigation

Three experimental tantalum alloy compositions containing 14-16% W, 1% Re, 0.7% Hf, 0.025% C or 0.015% C and 0.015% N were prepared as two inch diameter ingots by consumable electrode vacuum arc melting. The as-cast ingots were processed by extrusion and swaging to one inch and 0.4 inch diameter rod and evaluated. Excellent high temperature forging behavior was exhibited by all three compositions. Creep strength at 2000 F to 2400 F was enhanced by higher tungsten additions as well as substitution of nitrogen for carbon. Weldability of all three compositions was determined to be adequate. Room temperature ductility was retained in the advanced tantalum alloy compositions as well as a notched/unnotched strength ratio of 1.4 for a notched bar having a K sub t = 2.9.

Ammon, R. L.↗